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    • 46. 发明申请
    • Gas Field Ionization Ion Source and Ion Beam Apparatus
    • 气体离子源和离子束装置
    • US20150041650A1
    • 2015-02-12
    • US14390071
    • 2013-03-11
    • Hitachi High-Technologies Corporation
    • Yoshimi KawanamiHironori Moritani
    • H01J37/08H01J37/147H01J37/26H01J37/10
    • H01J37/08H01J27/26H01J37/10H01J37/147H01J37/26H01J37/28H01J2237/006H01J2237/0807
    • In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region.
    • 在常规气田电离离子源的情况下,由于离子束的电流量小,所以不可能以高S / N比和高速加工工艺进行分析。 鉴于这些问题,本发明的目的是为了获得大的离子束电流,同时抑制发射电极损坏的可能性。 本发明的特征在于,其中离子束至少在两种操作状态下发射的过程,包括第一操作状态,其中当施加第一提取电压时,将气体压力设置为第一气体压力,离子 从发射电极的顶点处的第一离子发射区域发射;以及第二操作状态,其中当施加高于第一提取电压的第二提取电压时,将气体压力设定为第二气体 高于第一气体压力的压力,从大于第一离子发射区域的第二离子发射区域发射离子。
    • 47. 发明申请
    • SCANNING ELECTRON MICROSCOPE
    • 扫描电子显微镜
    • US20150014531A1
    • 2015-01-15
    • US14379704
    • 2013-02-18
    • HITACHI HIGH-TECHNNOLOGIES COPRORATION
    • Minoru YamazakiHideyuki KazumiYuko SasakiMakoto Suzuki
    • H01J37/147H01J37/244H01J37/28
    • H01J37/147H01J37/244H01J37/28H01J2237/057H01J2237/063H01J2237/15H01J2237/1501H01J2237/2449H01J2237/24495H01J2237/2814
    • It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector.
    • 本发明的目的是提供一种扫描电子显微镜,用于鉴别从样品喷出的电子的角度,而不设置用于限制轴外的角度的开口。 为了实现上述目的,提出了一种扫描电子显微镜,其包括用于偏转电子束的照射位置的偏转器和用于控制偏转器的控制单元,并且还包括检测器,用于检测由 用电子束照射样品,布置在检测器和偏转器之间并具有用于使电子束通过的开口的开口构成部件和辅助信号偏转器,用于偏转从样品喷出的电子,其中次级信号偏转器是 被控制以根据偏转器的偏转控制将从样品喷出的电子偏转到通过电子束的开口。