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41. 发明申请

US20020045146A1 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus 有权
标题翻译：批式热处理装置和批式热处理装置的控制方法
公开(公告)号：US20020045146A1
公开(公告)日：2002-04-18
申请号：US09950876
申请日：2001-09-13
发明人： Wenling Wang , Koichi Sakamoto , Fujio Suzuki , Moyuru Yasuhara
IPC分类号： F27D019/00
CPC分类号： H01L21/67109 , C23C16/46 , C23C16/52 , C30B31/18 , F27D19/00 , F27D21/0014 , G05D23/1932 , H01L21/67248
摘要： A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed can estimate correct temperatures of the objects-to-be-processed. A reaction tube 2 comprises heaters 31-35, and temperature sensors Sin1-Sin5, Sout1-Sout5, and receives a wafer boat 23. A controller 100 estimates temperatures of wafers W and temperatures of the temperature sensors Sin1-Sin5 in 5 zones in the reaction tube 2 corresponding to the heaters 31-35 by using the temperature sensors Sin1-Sin5, Sout1-Sout5 and electric powers of the heaters 31-35. Based on relationships between estimated temperatures of the temperature sensors Sin1-Sin5 and really metered temperatures, functions f1-f5 expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions f1-f5 are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures. Electric powers to be fed to the respective heaters 31-35 are respectively controlled so that the corrected wafer temperatures are converged to target temperature trajectories.
摘要翻译：在估计被处理物体的温度的同时进行热处理的热处理装置可以估计被处理物的正确的温度。反应管2包括加热器31-35和温度传感器Sin1-Sin5，Sout1-Sout5并接收晶片舟23.控制器100估计晶片W的温度和温度传感器Sin1-Sin5在5个区域中的温度通过使用温度传感器Sin1-Sin5，Sout1-Sout5和加热器31-35的电功率对应于加热器31-35的反应管2。基于温度传感器Sin1-Sin5的估计温度与真实计量温度之间的关系，给出了表示估计温度和真实计量温度之间的关系的函数f1-f5。函数f1-f5由估计的晶片温度代替以校正估计的晶片温度。分别控制供给到各个加热器31-35的电力，使得校正的晶片温度会聚到目标温度轨迹。

42. 发明申请

US20010020439A1 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates 有权
标题翻译：用于控制半导体衬底温度升高和降低的方法和装置
公开(公告)号：US20010020439A1
公开(公告)日：2001-09-13
申请号：US09729669
申请日：2000-12-05
发明人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
IPC分类号： C30B025/00 , C30B023/00 , C30B028/12 , C30B028/14
CPC分类号： C23C16/45587 , C23C16/4584 , C23C16/46 , C23C16/52 , C30B25/12 , C30B25/16 , C30B31/14 , C30B31/18
摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.
摘要翻译：控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散，或化学气相沉积工艺。在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

43. 发明授权

US5155336A Rapid thermal heating apparatus and method 失效
标题翻译：快速热加热装置及方法
公开(公告)号：US5155336A
公开(公告)日：1992-10-13
申请号：US781632
申请日：1991-10-24
申请人： Christian M. Gronet , James F. Gibbons
发明人： Christian M. Gronet , James F. Gibbons
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , C30B31/18 , F27B17/00 , F27D99/00 , G01J5/00 , G01J5/06 , H01L21/00 , H02G3/04
CPC分类号： F27D99/0006 , C23C16/481 , C23C16/482 , C30B25/10 , C30B25/105 , C30B31/12 , C30B31/18 , F27B17/0025 , F27D99/0033 , G01J5/0003 , G01J5/06 , H01L21/67115 , H02G3/0425
摘要： A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.
摘要翻译：一种快速热加热装置，其中灯被设置在多个光管中，所述多个光管被布置成照亮并向衬底供应热量。光管被定位成使得照明图案重叠。控制提供给灯的能量以向衬底提供预定的加热图案。液体冷却的窗口与光管协作以将能量传递到设置在抽真空室中的晶片。

44. 发明授权

US4689094A Compensation doping of group III-V materials 失效
标题翻译： III-V族材料的补偿掺杂
公开(公告)号：US4689094A
公开(公告)日：1987-08-25
申请号：US813305
申请日：1985-12-24
申请人： H. Barteld Van Rees , Paul E. Whittier, Jr.
发明人： H. Barteld Van Rees , Paul E. Whittier, Jr.
IPC分类号： C23C16/448 , C30B31/06 , C30B31/18 , H01L21/205 , C03B23/00 , H01L21/365
CPC分类号： C30B31/06 , C23C16/4482 , C30B29/42 , C30B31/18 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262
摘要： A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.
摘要翻译：描述了生长外延掺杂的铬缓冲层的方法。三氯化砷和氢的第一流动通过其中设置有高温铬和砷化镓晶体的蒸馏器引导。三氯化砷与铬和镓砷晶体反应产生氯化铬，氯化镓和砷。然后将该蒸汽流导入反应器管，其中提供第二流的氯化镓和砷。从这些流程中沉积的是掺杂有铬的砷化镓。

45. 发明授权

US4217154A Method for control of an open gallium diffusion 失效
标题翻译：用于控制开放镓扩散的方法
公开(公告)号：US4217154A
公开(公告)日：1980-08-12
申请号：US955713
申请日：1978-10-30
申请人： Gerhard Popp , Gerhard Held
发明人： Gerhard Popp , Gerhard Held
IPC分类号： C30B31/06 , C30B31/08 , C30B31/18 , H01L21/22 , H01L7/34
CPC分类号： C30B31/08 , C30B31/18 , Y10S438/935
摘要： A method for controlling a gallium diffusion with at least one silicon wafer, wherein precisely dosed amounts of hydrogen, oxygen, and optionally nitrogen are mixed in a combustion chamber where the hydrogen and oxygen is converted into water vapor and hydrogen. The combustion chamber is connected to a source portion of the diffusion oven, wherein is contained a gallium oxide containing crucible. The water vapor, hydrogen (and nitrogen) mixture is then passed from the combustion chamber to the source over where the volatile sub-oxide (Ga.sub.2 O), is produced and then carried in a gas stream to the silicon wafer contained in a main portion of the diffusion oven for diffusion therein.
摘要翻译：一种用至少一个硅晶片控制镓扩散的方法，其中将精确计量的氢，氧和任选的氮气混合在燃烧室中，其中氢和氧被转化为水蒸气和氢气。燃烧室与扩散炉的源部连接，其中含有含有氧化镓的坩埚。然后将水蒸汽，氢气（和氮气）混合物从燃烧室传送到源，在其上产生挥发性亚氧化物（Ga 2 O），然后将其以气流运送到包含在主要部分扩散炉用于扩散。

46. 发明授权

US4100310A Method of doping inpurities 失效
标题翻译：掺杂杂质的方法
公开(公告)号：US4100310A
公开(公告)日：1978-07-11
申请号：US648943
申请日：1976-01-14
申请人： Mitsuru Ura , Takuzo Ogawa , Takaya Suzuki , Yosuke Inoue , Masayoshi Nomura
发明人： Mitsuru Ura , Takuzo Ogawa , Takaya Suzuki , Yosuke Inoue , Masayoshi Nomura
IPC分类号： C30B31/18 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/223 , H01L21/31 , H01L21/316 , B05D5/12
CPC分类号： H01L21/31625 , C30B31/18 , H01L21/00 , H01L21/02129 , H01L21/02271 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/0262 , Y10S118/90 , Y10S148/006 , Y10S148/043 , Y10S148/057
摘要： In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.
摘要翻译：在掺杂杂质的方法中，包括混合载气，半导体化合物气体和掺杂气体，并将混合气体导引到反应室，以形成在腔室内的衬底上掺杂有杂质的半导体层或半导体氧化物层，将掺杂气体与其他气体混合之前的一部分掺杂气体被引导到气体分析器，并且监测掺杂气体中的杂质浓度以控制掺杂气体中的杂质浓度。

47. 发明授权

US3956037A Method of forming semiconductor layers by vapor growth 失效
标题翻译：通过气相生长形成半导体层的方法
公开(公告)号：US3956037A
公开(公告)日：1976-05-11
申请号：US460052
申请日：1974-04-11
申请人： Takashi Ishii , Kazuhisa Takahashi , Akihiro Kondo
发明人： Takashi Ishii , Kazuhisa Takahashi , Akihiro Kondo
IPC分类号： C23C16/44 , C30B25/02 , C30B31/18 , H01L21/205 , H01L7/44
CPC分类号： C30B29/06 , C30B25/02 , C30B31/18 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , Y10S148/003 , Y10S148/007 , Y10S148/039 , Y10S148/04 , Y10S438/916
摘要： A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.
摘要翻译：公开了通过气相生长在第一半导体层上形成第二半导体层的方法。两个半导体层具有相同的导电类型但具有不同的杂质浓度。在形成过程中，在开始第二半导体层的气相生长之前提供掺杂气体，从而在气相生长边界中建立陡峭的杂质分布。

48. 发明授权

US08435833B2 Gallium nitride light emitting devices on diamond 有权
标题翻译：金刚石上的氮化镓发光器件
公开(公告)号：US08435833B2
公开(公告)日：2013-05-07
申请号：US13410693
申请日：2012-03-02
申请人： Robert C. Linares
发明人： Robert C. Linares
IPC分类号： H01L21/00
CPC分类号： C30B23/02 , C30B25/02 , C30B25/105 , C30B29/04 , C30B29/406 , C30B31/18 , H01L21/02376 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01S5/0213 , H01S5/32341
摘要： Wide bandgap devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing a wide bandgap material on diamond and building devices on that grown layer. The second method involves bonding a wide bandgap layer (device or film) onto diamond and building the device onto the bonded layer. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other wide bandgap semiconductor devices.
摘要翻译：宽带隙器件形成在金刚石衬底上，例如作为白炽灯泡和荧光灯泡的替代品的发光二极管。在一个实施例中，二极管（或其他器件）以至少两种方法形成在金刚石上。第一种方法包括在该生长层上在金刚石和建筑装置上生长宽带隙材料。第二种方法包括将宽带隙层（器件或膜）结合到金刚石上并将该器件构建到接合层上。这些器件可以提供比白炽灯或荧光灯明显更高的效率，并且提供比其他技术显着更高的光或能量密度。类似的方法和结构导致其它宽带隙半导体器件。

49. 发明授权

US08129733B2 Gallium nitride light emitting devices on diamond 有权
标题翻译：金刚石上的氮化镓发光器件
公开(公告)号：US08129733B2
公开(公告)日：2012-03-06
申请号：US11275748
申请日：2006-01-26
申请人： Robert C. Linares
发明人： Robert C. Linares
IPC分类号： H01L33/00
CPC分类号： C30B23/02 , C30B25/02 , C30B25/105 , C30B29/04 , C30B29/406 , C30B31/18 , H01L21/02376 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01S5/0213 , H01S5/32341
摘要： Gallium nitride devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, gallium nitride diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing gallium nitride on diamond and building devices on that gallium nitride layer. The second method involves bonding gallium nitride (device or film) onto diamond and building the device onto the bonded gallium nitride. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other gallium nitride semiconductor devices.
摘要翻译：氮化镓器件形成在金刚石衬底上，例如作为白炽灯泡和荧光灯泡的替代品的发光二极管。在一个实施例中，氮化镓二极管（或其它器件）以至少两种方法形成在金刚石上。第一种方法包括在该氮化镓层上生长金刚石和建筑器件上的氮化镓。第二种方法包括将氮化镓（器件或膜）接合到金刚石上并将该器件构建到结合的氮化镓上。这些器件可以提供比白炽灯或荧光灯明显更高的效率，并且提供比其他技术显着更高的光或能量密度。类似的方法和结构导致其他氮化镓半导体器件。

50. 发明授权

US06740196B2 RTA chamber with in situ reflective index monitor 失效
标题翻译： RTA室与原位反射指数监视器
公开(公告)号：US06740196B2
公开(公告)日：2004-05-25
申请号：US10081481
申请日：2002-02-21
申请人： Fu-Su Lee , Juin-Jie Chang , Ching-Shan Lu
发明人： Fu-Su Lee , Juin-Jie Chang , Ching-Shan Lu
IPC分类号： C23F100
CPC分类号： C30B31/18 , C30B31/12 , G01M11/005 , H01L21/31662 , H01L21/67115 , H01L21/67253
摘要： A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.
摘要翻译：快速热退火（RTA）室在室壁中具有一个或多个开口，并且在开口或开口中分别具有反射指数监测器。反射指数监视器或监视器各自测量快速热退火室的反射板的红外反射指数，并将相应的信号发送到过程控制器，报警器或过程控制器和报警器。在反射板的测量反射指数偏离控制器的反射指数的情况下，过程控制器终止腔室的加热操作，以防止对腔室中的半导体晶片的损坏。可能会启动警报，提醒人员需要立即更换污染的反射板。

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