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41. 发明申请

US20130277550A1 Mass Spectrometer Sampling Cone With Coating 有权
标题翻译：质谱仪采用锥形涂层
公开(公告)号：US20130277550A1
公开(公告)日：2013-10-24
申请号：US13922681
申请日：2013-06-20
申请人： Micromass UK Limited
发明人： Gordon A. Jones , David S. Douce , Amir Farooq
IPC分类号： H01J49/04
CPC分类号： H01J49/04 , C23C14/0635 , C23C14/221 , C23C14/35 , C23C14/48 , C23C16/32 , C23C30/00 , H01J49/067
摘要： A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.
摘要翻译：公开了一种具有金属硼化物涂层如二硼化钛的质谱仪的采样锥。

42. 发明申请

US20130129940A1 ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME 有权
标题翻译：有机氨基甲酸酯前体及其制备和使用方法
公开(公告)号：US20130129940A1
公开(公告)日：2013-05-23
申请号：US13474076
申请日：2012-05-17
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

43. 发明申请

US20130078328A1 Coated Pelletizing Dies 审中-公开
标题翻译：涂层造粒模具
公开(公告)号：US20130078328A1
公开(公告)日：2013-03-28
申请号：US13246137
申请日：2011-09-27
申请人： Sudhir Brahmandam , David Richard Siddle , Irene Spitsberg
发明人： Sudhir Brahmandam , David Richard Siddle , Irene Spitsberg
IPC分类号： B29C67/08
CPC分类号： C23C16/32 , B01J2/20 , B29B9/06 , B29C48/0022 , B29C48/04 , B29C48/2528 , B29C48/30 , B29C48/3003 , B29C48/345 , B30B11/202 , B30B11/221 , B30B11/227 , C23C14/0664 , C23C16/06
摘要： Pelletizing ring extrusion dies comprising a die body having a plurality of holes, wherein each hole has surface at least partially coated with a low-friction coating. The low-friction coatings reduce surface temperatures during operation of the dies, which reduces volatilization and inconsistent flow of the material being extruded. The pelletizing ring extrusion dies possess improved tool life due to the low-friction coatings.
摘要翻译：造粒环挤出模具包括具有多个孔的模具主体，其中每个孔具有至少部分涂覆有低摩擦涂层的表面。低摩擦涂层降低了模具运行过程中的表面温度，减少了被挤压材料的挥发和不稳定的流动。造粒环挤出模具由于低摩擦涂层而具有改善的刀具寿命。

44. 发明申请

US20130068539A1 METHODS OF ATTACHING A POLYCRYSTALLINE DIAMOND COMPACT TO A SUBSTRATE AND CUTTING ELEMENTS FORMED USING SUCH METHODS 有权
标题翻译：将多晶金刚石接合到基板上的方法和使用这种方法形成的切割元件
公开(公告)号：US20130068539A1
公开(公告)日：2013-03-21
申请号：US13617604
申请日：2012-09-14
申请人： Chaitanya K. Vempati , Suresh G. Patel
发明人： Chaitanya K. Vempati , Suresh G. Patel
IPC分类号： E21B10/46 , B32B37/16 , B32B37/12
CPC分类号： E21B10/567 , C22C2204/00 , C23C16/042 , C23C16/045 , C23C16/27 , C23C16/32 , C23C16/342 , C23C16/50 , C23C16/56 , E21B10/5673 , E21B10/5735
摘要： Methods of attaching a polycrystalline diamond compact (PDC) element to a substrate include maintaining a gap between the PDC element and an adjacent substrate, and at least substantially filling the gap with a deposition process. Methods of forming a cutting element for an earth-boring tool include forming a PDC element by pressing diamond crystals together, forming a substrate including a particulate carbide material and a matrix material, leaving a gap between at least portions of the PDC element and the substrate, masking surfaces of the PDC element and of the substrate that do not face the gap, and forming an adhesion material on surfaces of the PDC element and of the substrate that face the gap. Cutting elements for earth-boring tools include a PDC element attached to a substrate with at least one of diamond, diamond-like carbon, a carbide material, a nitride material, and a cubic boron nitride material.
摘要翻译：将多晶金刚石致密体（PDC）元件附接到衬底的方法包括保持PDC元件和相邻衬底之间的间隙，并且至少基本上用沉积工艺填充间隙。形成用于钻孔工具的切割元件的方法包括通过将金刚石晶体压在一起形成PDC元件，形成包括颗粒碳化物材料和基体材料的基板，在PDC元件和基板的至少部分之间留下间隙，PDC元件和不与间隙对置的基板的掩模表面，并且在PDC元件和与该间隙相对的基板的表面上形成粘合材料。用于钻孔工具的切割元件包括附接到具有金刚石，类金刚石碳，碳化物材料，氮化物材料和立方氮化硼材料中的至少一种的基板上的PDC元件。

45. 发明授权

US07727912B2 Method of light enhanced atomic layer deposition 有权
标题翻译：光增强原子层沉积的方法
公开(公告)号：US07727912B2
公开(公告)日：2010-06-01
申请号：US11378270
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
发明人： Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/45536 , C23C16/482 , H01L21/28562
摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
摘要翻译：一种用于在基板上形成薄膜的光增强原子层沉积。该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

46. 发明授权

US07687383B2 Methods of depositing electrically active doped crystalline Si-containing films 有权
标题翻译：沉积电活性掺杂的结晶含硅膜的方法
公开(公告)号：US07687383B2
公开(公告)日：2010-03-30
申请号：US11343244
申请日：2006-01-30
申请人： Matthias Bauer
发明人： Matthias Bauer
IPC分类号： H01L21/04
CPC分类号： H01L29/7848 , C23C16/04 , C23C16/22 , C23C16/24 , C23C16/32 , C23C16/325 , C23C16/45512 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/32056 , H01L21/3215 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
摘要翻译：含有相对高含量的III族或V族掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。可以获得极高水平的取代掺入，包括含有电活性掺杂剂的至少约3×1020原子cm -3的晶体硅膜。通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

47. 发明授权

US07670644B2 Die for molding honeycomb structure and manufacturing method thereof 有权
公开(公告)号：US07670644B2
公开(公告)日：2010-03-02
申请号：US10481751
申请日：2002-11-05
申请人： Susumu Matsuoka , Seiichi Inoue , Haremi Ito , Keiji Matsumoto
发明人： Susumu Matsuoka , Seiichi Inoue , Haremi Ito , Keiji Matsumoto
IPC分类号： C23C16/00
CPC分类号： C23C18/1644 , B01J35/04 , B28B3/26 , B28B3/269 , B29C47/0028 , B29C47/0852 , B29C47/12 , B29L2031/60 , C23C16/045 , C23C16/32 , C23C18/165
摘要： A die for extrusion-forming a honeycomb structure which includes: a die base provided with ceramic puddle introducing holes and slits in communication with the ceramic puddle introducing holes; and a substrate layer, which roughly defines the final width of the slits, and a surface layer, which precisely defines the final width of the slits, formed on the die base in this order so that the final width of the slits becomes 15 to 200 μm, wherein the surface layer is made up of tungsten carbide particles which are 5 μm or less in average particle diameter and contain W3C as a main ingredient. According to this invention, there is provided a die for extrusion-forming a honeycomb structure which can restrain fluctuation in extrusion-forming speed among its parts and resistance to pushing force, both caused at the time of extrusion-forming, to be very small and is superior in productivity and durability.

48. 发明申请

US20100047449A1 PROCESS FOR DEPOSITION OF NON-OXIDE CERAMIC COATINGS 失效
标题翻译：沉积非氧化物陶瓷涂料的方法
公开(公告)号：US20100047449A1
公开(公告)日：2010-02-25
申请号：US12374555
申请日：2007-07-19
申请人： Francis Maury , Aurelia Douard
发明人： Francis Maury , Aurelia Douard
IPC分类号： C23C16/32 , C23C16/34 , C23C16/36 , C23C16/448
CPC分类号： C23C16/32 , C23C16/34 , C23C16/36 , C23C16/4486
摘要： A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.
摘要翻译：在金属基材上，通过DLI-CVD在低温和大气压下沉积基于铬碳化物，氮化物或碳氮化物的非氧化物陶瓷型涂层的方法包括：a）制备含有分子化合物的溶液，是属于双（芳烃）族的金属的前体，分解温度为300℃-550℃，该化合物溶解在氧原子消耗溶剂中; b）溶液在溶剂沸腾温度和前体分解温度之间的温度下作为气溶胶引入加热的蒸发器中; 和c）将前体和蒸发的溶剂从蒸发器驱动到具有冷壁的CVD反应器，其中将承载基底的基座被覆盖并加热至高于前体分解温度的温度，最大值为550 蒸发器和CVD反应器处于大气压。

49. 发明授权

US07652288B2 Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD 失效
标题翻译： Si1-X-YGEXCY和Si1-YCY合金层通过特高压CVD在Si上的外延和多晶生长
公开(公告)号：US07652288B2
公开(公告)日：2010-01-26
申请号：US12163389
申请日：2008-06-27
申请人： Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
发明人： Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
IPC分类号： H01L29/00
CPC分类号： C23C16/325 , C23C16/32 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02694 , Y10T428/12674
摘要： A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon
摘要翻译：描述了一种用于在热壁，等温UHV-CVD系统中在多个基板上沉积单晶，硅碳和硅锗碳外延膜的方法和装置。特别地，描述了在350℃至750℃的范围内的多晶片低温生长技术，用于在Si和SiGe膜中外延引入碳，其具有非常突然且明确限定的结，但没有任何相关的氧背景污染。优选地，这些外延SiC和SiGeC膜原位掺杂p型或n型，并且存在低浓度的碳<1020cm-3，生长的p型或n型掺杂剂分布可以承受炉退火到850℃的温度和快速热退火温度至1000℃

50. 发明申请

US20070218704A1 Method of light enhanced atomic layer deposition 有权
标题翻译：光增强原子层沉积的方法
公开(公告)号：US20070218704A1
公开(公告)日：2007-09-20
申请号：US11378270
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Frank Cerio , Jacques Faguet
发明人： Tadahiro Ishizaka , Frank Cerio , Jacques Faguet
IPC分类号： H01L21/31
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/45536 , C23C16/482 , H01L21/28562
摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
摘要翻译：一种用于在基板上形成薄膜的光增强原子层沉积。该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

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