会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for depositing hard metallic coatings
    • 沉积硬质金属涂层的方法
    • US08431190B2
    • 2013-04-30
    • US12374109
    • 2007-07-19
    • Francis MauryAurélia Douard
    • Francis MauryAurélia Douard
    • C23C16/00C23C14/26H05B6/02H05B6/24
    • C23C16/18C23C16/4486
    • A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen-free solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings. An appropriate injectable solution is also described.
    • 通过化学气相沉积在金属基底上沉积硬金属铬涂层或类似金属的方法包括:a)制备在无氧溶剂中含有i)二(芳烃)族的分子化合物 分解温度为300℃-550℃的沉积金属的前体,和ii)氯化添加剂; b)在溶剂沸腾温度和前体分解温度(PDT)之间的温度下将溶液作为气溶胶引入加热的蒸发器中; 以及c)将蒸发的气溶胶从蒸发器驱动到包括承载基板的CVD反应器的CVD反应器,所述基体在PDT上方加热至550℃,蒸发器和CVD反应器经受大气压力。 这种在低温和大气压下进行的DLI-CVD方法可连续工业处理大型金属板,生产硬质,单层或纳米结构的多层金属涂层。 还描述了适当的可注射溶液。
    • 3. 发明申请
    • METHOD FOR DEPOSITING HARD METALLIC COATINGS
    • 沉积硬金属涂层的方法
    • US20090324822A1
    • 2009-12-31
    • US12374109
    • 2007-07-19
    • Francis MauryAurelia Douard
    • Francis MauryAurelia Douard
    • C23C16/44C09D1/00
    • C23C16/18C23C16/4486
    • A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen atom depleted solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings. An appropriate injectable solution is also described.
    • 通过化学气相沉积在金属基底上沉积硬质金属铬涂层或类似金属的方法包括:a)制备在氧原子贫化溶剂中含有i)二(芳烃)族的分子化合物,其为 分解温度为300℃-550℃的沉积金属的前体,和ii)氯化添加剂; b)在溶剂沸腾温度和前体分解温度(PDT)之间的温度下将溶液作为气溶胶引入加热的蒸发器中; 以及c)将蒸发的气溶胶从蒸发器驱动到包括承载基板的CVD反应器的CVD反应器,所述基体在PDT上方加热至550℃,蒸发器和CVD反应器经受大气压力。 这种在低温和大气压下进行的DLI-CVD方法可连续工业处理大型金属板,生产硬质,单层或纳米结构的多层金属涂层。 还描述了适当的可注射溶液。
    • 4. 发明授权
    • Process for deposition of non-oxide ceramic coatings
    • 沉积非氧化物陶瓷涂层的方法
    • US08343582B2
    • 2013-01-01
    • US12374555
    • 2007-07-19
    • Francis MauryAurélia Douard
    • Francis MauryAurélia Douard
    • C23C16/32C23C16/34C23C16/36
    • C23C16/32C23C16/34C23C16/36C23C16/4486
    • A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.
    • 在金属基材上,通过DLI-CVD在低温和大气压下沉积基于铬碳化物,氮化物或碳氮化物的非氧化物陶瓷型涂层的方法包括:a)制备含有分子化合物的溶液, 是属于双(芳烃)族的金属的前体,分解温度为300℃-550℃,该化合物溶解在氧原子消耗溶剂中; b)溶液在溶剂沸腾温度和前体分解温度之间的温度下作为气溶胶引入加热的蒸发器中; 和c)将前体和蒸发的溶剂从蒸发器驱动到具有冷壁的CVD反应器,其中将承载基底的基座被覆盖并加热至高于前体分解温度的温度,最大值为550 蒸发器和CVD反应器处于大气压。
    • 7. 发明申请
    • PROCESS FOR DEPOSITION OF NON-OXIDE CERAMIC COATINGS
    • 沉积非氧化物陶瓷涂料的方法
    • US20100047449A1
    • 2010-02-25
    • US12374555
    • 2007-07-19
    • Francis MauryAurelia Douard
    • Francis MauryAurelia Douard
    • C23C16/32C23C16/34C23C16/36C23C16/448
    • C23C16/32C23C16/34C23C16/36C23C16/4486
    • A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.
    • 在金属基材上,通过DLI-CVD在低温和大气压下沉积基于铬碳化物,氮化物或碳氮化物的非氧化物陶瓷型涂层的方法包括:a)制备含有分子化合物的溶液, 是属于双(芳烃)族的金属的前体,分解温度为300℃-550℃,该化合物溶解在氧原子消耗溶剂中; b)溶液在溶剂沸腾温度和前体分解温度之间的温度下作为气溶胶引入加热的蒸发器中; 和c)将前体和蒸发的溶剂从蒸发器驱动到具有冷壁的CVD反应器,其中将承载基底的基座被覆盖并加热至高于前体分解温度的温度,最大值为550 蒸发器和CVD反应器处于大气压。