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41. 发明申请

US20140179582A1 METHODS AND COMPOSITIONS FOR REMOVAL OF METAL HARDMASKS 有权
标题翻译：用于去除金属硬质合金的方法和组合物
公开(公告)号：US20140179582A1
公开(公告)日：2014-06-26
申请号：US13786834
申请日：2013-03-06
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Deyan Wang , Martin W. Bayes , Peter Trefonas , Kathleen M. O'connell
IPC分类号： C11D3/04 , C11D7/10
CPC分类号： C11D3/046 , C09K13/00 , C09K13/08 , C11D11/0047 , H01L21/0332 , H01L21/32134
摘要： The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and wherein the composition comprises at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R═H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R═H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof. The invention also provides a composition comprising at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R═H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R═H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof.
摘要翻译：本发明提供了一种从基材中除去膜的方法，所述方法包括将组合物施加到膜上，并且其中所述组合物至少包含以下物质：a）水; 和b）至少一种选自以下化合物（iv）的化合物：i）NR 4 HF 2（式1），其中R = H，烷基，取代的烷基，ii）NR 4 F（式2），其中R = H，烷基，烷基，iii）HF（氢氟酸），iv）H 2 SiF 6（六氟硅酸）或v）其组合。本发明还提供至少包含以下物质的组合物：a）水; 和b）至少一种选自以下化合物（iv）的化合物：i）NR 4 HF 2（式1），其中R = H，烷基，取代的烷基，ii）NR 4 F（式2），其中R = H，烷基，烷基，iii）HF（氢氟酸），iv）H 2 SiF 6（六氟硅酸）或v）其组合。

42. 发明申请

US20140144880A1 Method of Surface Treatment for Zirconia Dental Implants 有权
标题翻译：氧化锆牙植入物的表面处理方法
公开(公告)号：US20140144880A1
公开(公告)日：2014-05-29
申请号：US13687212
申请日：2012-11-28
申请人： TAIPEI MEDICAL UNIVERSITY
发明人： Sea-Fue Wang , Chung-Kuang Yang , Jen-Chang Yang , Sheng-Yang Lee
IPC分类号： B44C1/22
CPC分类号： C04B41/009 , A61C8/0012 , A61C2008/0046 , C04B41/5353 , C04B41/91 , C04B2111/00836 , C09K13/08 , C04B35/48
摘要： A method of surface treatment for zirconium oxide implants and the etching formula for the same are disclosed. The processes are carried out at room temperature. The average surface roughness Ra and the standard deviation of the implant are measured showing significant improvement while comparing with the un-treated sample and the hydrofluoric acid treated samples. The average contact angle is provided showing an almost hydrophilic surface after etched by the formula according to the present invention.
摘要翻译：公开了一种氧化锆植入物的表面处理方法及其蚀刻配方。该过程在室温下进行。与未处理的样品和氢氟酸处理的样品相比，测量的平均表面粗糙度Ra和植入物的标准偏差显示出显着的改善。提供了平均接触角，其显示出根据本发明的公式蚀刻后几乎亲水的表面。

43. 发明授权

US08623773B2 Etchant for metal layer including copper or a copper alloy, method of manufacturing a display substrate using the same and display substrate 有权
标题翻译：包括铜或铜合金的金属层的蚀刻剂，使用其的显示基板的制造方法和显示基板
公开(公告)号：US08623773B2
公开(公告)日：2014-01-07
申请号：US13438405
申请日：2012-04-03
申请人： Hong-Sick Park , Wang-Woo Lee
发明人： Hong-Sick Park , Wang-Woo Lee
IPC分类号： H01L21/302
CPC分类号： C09K13/08 , C23F1/02 , C23F1/18 , H01L21/32134 , H01L27/124
摘要： An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.
摘要翻译：蚀刻剂包括约50重量％至约70重量％的磷酸，约1重量％至约5重量％的硝酸，约10重量％至约20重量％的乙酸，约0.1 约2重量％的包含唑类化合物和其余水的腐蚀抑制剂。

44. 发明申请

US20130105728A1 Dry Etching Agent and Dry Etching Method 有权
标题翻译：干法蚀刻剂和干蚀刻法
公开(公告)号：US20130105728A1
公开(公告)日：2013-05-02
申请号：US13808506
申请日：2011-06-24
申请人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
发明人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
IPC分类号： C09K13/00
CPC分类号： C09K13/00 , C09K13/08 , H01L21/31116
摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
摘要翻译：根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1 @ n @ 7的整数）; 和（C）惰性气体。这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

45. 发明授权

US08153095B2 Method for producing highly pure solutions using gaseous hydrogen fluoride 有权
标题翻译：使用氟化氢气体生产高纯度溶液的方法
公开(公告)号：US08153095B2
公开(公告)日：2012-04-10
申请号：US10455067
申请日：2003-06-05
申请人： Michael A. Dodd , John McFarland , Wolfgang Sievert
发明人： Michael A. Dodd , John McFarland , Wolfgang Sievert
IPC分类号： C01B7/19
CPC分类号： C01B7/01 , C01B7/093 , C01B7/191 , C01B7/195 , C01B9/08 , C01C1/162 , C01P2006/80 , C09K13/08 , H01L21/30604 , H01L21/31111
摘要： Methods for producing highly pure solutions containing hydrogen fluoride, one or more salts thereof or a mixture of two or more thereof, by adding hydrogen fluoride to at least one anhydrous solvent, wherein the hydrogen fluoride is added to the anhydrous solvent or solvents in the form of a gas or as a liquified gas or as a mixture of gas and liquefied gas. High purity hydrogen fluoride and ammonium fluoride solutions produced by the inventive method are also disclosed.
摘要翻译：通过向至少一种无水溶剂中加入氟化氢来生产含有氟化氢的高纯度溶液，其一种或多种盐或其两种或多种的混合物的方法，其中将氟化氢加入无水溶剂或形式的溶剂气体或液化气体或气体和液化气体的混合物。还公开了通过本发明方法制备的高纯度氟化氢和氟化铵溶液。

46. 发明授权

US08142673B2 Compositions for dissolution of low-k dielectric films, and methods of use 有权
标题翻译：用于溶解低k电介质膜的组合物及其使用方法
公开(公告)号：US08142673B2
公开(公告)日：2012-03-27
申请号：US10889597
申请日：2004-07-12
申请人： Donald L Yates
发明人： Donald L Yates
IPC分类号： H01L21/461
CPC分类号： C09K13/08 , B08B3/08 , C09K13/00 , C09K13/04 , C09K13/06 , C11D7/08 , C11D7/10 , C11D7/50 , C11D11/0047 , C23G1/02 , G03F7/423 , H01L21/31111 , H01L21/31133 , Y10S438/948
摘要： An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.
摘要翻译：提供了用于清洁半导体晶片的表面的改进的组合物和方法。该组合物可用于选择性地除去低k介电材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

47. 发明申请

US20110073801A1 Composition for etching silicon oxide and method of forming a contact hole using the same 审中-公开
公开(公告)号：US20110073801A1
公开(公告)日：2011-03-31
申请号：US12926615
申请日：2010-11-30
申请人： Dong-Won Hwang , Kook-Joo Kim , Jung-In LA , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
发明人： Dong-Won Hwang , Kook-Joo Kim , Jung-In LA , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
IPC分类号： C09K13/08
CPC分类号： C03C15/00 , C09K13/08 , H01L21/31133 , H01L21/76804 , H01L21/76897 , H01L27/10855
摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

48. 发明申请

US20100330768A1 METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES 失效
标题翻译：用于在微型器件制造中蚀刻去氧化物的方法
公开(公告)号：US20100330768A1
公开(公告)日：2010-12-30
申请号：US12875036
申请日：2010-09-02
申请人： Niraj Rana
发明人： Niraj Rana
IPC分类号： H01L21/02
CPC分类号： H01L21/31111 , C09K13/08 , H01L27/10852 , H01L28/91
摘要： Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.
摘要翻译：本文公开了在制造微特征装置中选择性蚀刻掺杂氧化物的方法。用于在微特征工件上蚀刻材料的一种这样的方法的实施例包括提供包括掺杂氧化物层和与掺杂氧化物层相邻的氮化物层的微特征工件。该方法包括用包含DI：HF和酸的蚀刻剂选择性地蚀刻掺杂的氧化物层，以提供蚀刻剂的pH，使得蚀刻剂包括（a）磷硅玻璃（PSG）对氮化物的选择性大于250:1 ，和（b）通过PSG的蚀刻速率大于9,000埃/分钟。

49. 发明授权

US07803686B2 Methods for etching doped oxides in the manufacture of microfeature devices 有权
标题翻译：在制造微特征器件时蚀刻掺杂氧化物的方法
公开(公告)号：US07803686B2
公开(公告)日：2010-09-28
申请号：US11871569
申请日：2007-10-12
申请人： Niraj Rana
发明人： Niraj Rana
IPC分类号： H01L21/20
CPC分类号： H01L21/31111 , C09K13/08 , H01L27/10852 , H01L28/91
摘要： Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.
摘要翻译：本文公开了在制造微特征装置中选择性蚀刻掺杂氧化物的方法。用于在微特征工件上蚀刻材料的一种这样的方法的实施例包括提供包括掺杂氧化物层和与掺杂氧化物层相邻的氮化物层的微特征工件。该方法包括用包含DI：HF和酸的蚀刻剂选择性地蚀刻掺杂的氧化物层，以提供蚀刻剂的pH，使得蚀刻剂包括（a）磷硅玻璃（PSG）对氮化物的选择性大于250:1 ，和（b）通过PSG的蚀刻速率大于9,000埃/分钟。

50. 发明申请

US20100224589A1 METHOD FOR ETCHING GLASS SUBSTRATE 失效
标题翻译：蚀刻玻璃基板的方法
公开(公告)号：US20100224589A1
公开(公告)日：2010-09-09
申请号：US12781884
申请日：2010-05-18
申请人： Yoshitaka SAIJO , Yuichi SUZUKI , Ryoji AKIYAMA , Atsuyoshi TAKENAKA , Junichiro KASE
发明人： Yoshitaka SAIJO , Yuichi SUZUKI , Ryoji AKIYAMA , Atsuyoshi TAKENAKA , Junichiro KASE
IPC分类号： B29D11/00
CPC分类号： C03C15/00 , C09K13/08
摘要： The invention provides a method for etching which is intended for reducing the thickness of a glass substrate, and which attains a high etching rate and is capable of inhibiting haze generation on the glass substrate surface. The invention relates to a method for etching a glass substrate surface, comprising etching the glass substrate surface in an amount of 1-690 μm in terms of etching amount, in which the etching is conducted with an etchant having an HF concentration of 1-5 wt % and an HCl concentration of 1 wt % or higher.
摘要翻译：本发明提供一种用于减小玻璃基板的厚度的蚀刻方法，其蚀刻速度高，能够抑制玻璃基板表面发生雾度。本发明涉及一种用于蚀刻玻璃衬底表面的方法，包括以蚀刻量蚀刻玻璃衬底表面的量为1-690μm，其中用HF浓度为1-5的蚀刻剂进行蚀刻 wt％，HCl浓度为1wt％以上。

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