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    • 41. 发明授权
    • Halftone type phase shift mask blank and phase shift mask thereof
    • 半色调型相移掩模空白及其相移掩模
    • US07592106B2
    • 2009-09-22
    • US11562217
    • 2006-11-21
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • G03F1/00G03C5/00
    • G03F1/32G03F1/84
    • A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
    • 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。
    • 45. 发明授权
    • Manufacturing method and apparatus of phase shift mask blank
    • 相移掩模空白的制造方法和装置
    • US06783634B2
    • 2004-08-31
    • US09952445
    • 2001-09-12
    • Osamu NozawaHideaki Mitsui
    • Osamu NozawaHideaki Mitsui
    • C23C1434
    • G03F1/32C23C14/0036C23C14/0641C23C14/225C23C14/505G03F1/26G03F1/68
    • There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
    • 公开了一种相移掩模坯料的制造方法,其中可以尽可能地减少坯料之间的相位角和透射率的分散,并且产率令人满意。 在相移掩模空白的制造方法中,使用溅射法在透明基板上连续地形成薄膜的工艺包括:依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜,并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。
    • 47. 发明授权
    • Phase shift mask and phase shift mask blank
    • 相移掩模和相移掩模空白
    • US6087047A
    • 2000-07-11
    • US153027
    • 1998-09-15
    • Hideaki MitsuiOsamu NozawaMegumi Takeuchi
    • Hideaki MitsuiOsamu NozawaMegumi Takeuchi
    • G03F1/32G03F1/68H01L21/027G03F9/00
    • G03F1/32
    • In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.
    • 在透明基板上形成半透明膜的半色调型相移掩模坯料中,半透明膜用于将透过半透明膜的第一光束的相位偏移一秒 直接透过透明基板的光束,进一步降低第一光束的强度,半透明膜包括硅和镍,以及选自氮,氧和氢的至少一种,以及 硅和镍之间的关系由以下公式确定:其中[膜中的镍原子%的原子%的原子%与膜中的硅的原子%的比率]落入其中 范围在0.15和0.5之间。
    • 50. 发明授权
    • Magnetic recording media and methods for producing the same
    • 磁记录介质及其制造方法
    • US5824427A
    • 1998-10-20
    • US673754
    • 1996-06-27
    • Masato KobayashiKeiji MoroishiJun-ichi HorikawaOsamu Nozawa
    • Masato KobayashiKeiji MoroishiJun-ichi HorikawaOsamu Nozawa
    • G11B5/66G11B5/64G11B5/65G11B5/73G11B5/738G11B5/85G11B5/851H01F10/16H01F10/18H01F10/30C23C14/34G11B5/62
    • G11B5/7325G11B5/656
    • A magnetic recording medium comprising a non-magnetic underlayer and a CoPt magnetic layer provided on a substrate in this order wherein the non-magnetic underlayer comprises one or more non-magnetic layers, one of the non-magnetic layers which is in contact with the CoPt magnetic layer consists mainly of Cr and Mo, and difference (d.sub.(002) -d.sub.(110)) obtained by subtracting a crystalline lattice spacing of bcc (110) faces in the non-magnetic layer consisting mainly of Cr and Mo from a crystalline lattice spacing of hcp (002) faces in the magnetic layer falls within a range of from 0.002 to 0.032 .ANG., which shows a high magnetic coercive force and square ratio and a low medium noise, and a method for producing the magnetic recording medium mentioned above wherein at least the non-magnetic layer consisting mainly of Cr and Mo and the CoPt magnetic layer are formed by a sputtering technique using a substrate heating temperature within a range of 250.degree. to 425.degree. C. and an Ar gas pressure within a range of 0.5 to 10 mTorr.
    • 一种包括非磁性底层和设置在基板上的CoPt磁性层的磁记录介质,其中非磁性底层包括一个或多个非磁性层,与非磁性层接触的非磁性层之一 CoPt磁性层主要由Cr和Mo组成,并且通过从主要由Cr和Mo组成的非磁性层中减去bcc(110)面的晶格间距而得到的差(d(002)-d(110)) 磁性层中的hcp(002)面的晶格间距在0.002〜0.032的范围内,具有高的矫顽力和平方比以及低的中等噪音,以及提供的磁记录介质的制造方法 其中至少主要由Cr和Mo组成的非磁性层和CoPt磁性层通过使用基板加热温度在250°至425℃范围内的溅射技术形成,并且Ar气体压制 在0.5至10 mTorr的范围内。