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    • 2. 发明授权
    • Halftone type phase shift mask blank and phase shift mask thereof
    • 半色调型相移掩模空白及其相移掩模
    • US07592106B2
    • 2009-09-22
    • US11562217
    • 2006-11-21
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • G03F1/00G03C5/00
    • G03F1/32G03F1/84
    • A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
    • 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。
    • 5. 发明授权
    • Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
    • 半色调相移掩模空白,半色调相移掩模及其制造方法
    • US07632612B2
    • 2009-12-15
    • US11478687
    • 2006-07-03
    • Yuuki ShiotaOsamu NozawaRyo OhkuboHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaRyo OhkuboHideaki Mitsui
    • G03F1/00
    • G03F1/32G03F1/80Y10T428/24331Y10T428/31616
    • A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
    • 用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板,形成在用于透射曝光光束的基板上的透光部分,形成在基板上用于透射部分曝光的移相器部分 光束作为透射光束并且将透射光束的相位移动预定量,以及用于形成移相器部分的移相器膜。 半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消,从而保持和改善在边界部分处的优异的对比度 曝光图案被转印到要曝光的物体的表面上。 移相器膜包括以硅,氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。
    • 6. 发明授权
    • Halftone type phase shift mask blank and phase shift mask thereof
    • 半色调型相移掩模空白及其相移掩模
    • US07862963B2
    • 2011-01-04
    • US12542282
    • 2009-08-17
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • G03F1/00
    • G03F1/32G03F1/84
    • A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
    • 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。
    • 7. 发明申请
    • Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
    • 半色调相移掩模空白,半色调相移掩模及其制造方法
    • US20070082278A1
    • 2007-04-12
    • US11478687
    • 2006-07-03
    • Yuuki ShiotaOsamu NozawaRyo OhkuboHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaRyo OhkuboHideaki Mitsui
    • B32B9/00B32B17/06G03C5/00G21K5/00B32B17/10G03F1/00
    • G03F1/32G03F1/80Y10T428/24331Y10T428/31616
    • A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
    • 用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板,形成在用于透射曝光光束的基板上的透光部分,形成在基板上用于透射部分曝光的移相器部分 光束作为透射光束并且将透射光束的相位移动预定量,以及用于形成移相器部分的移相器膜。 半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消,从而保持和改善在边界部分处的优异的对比度 曝光图案被转印到要曝光的物体的表面上。 移相器膜包括以硅,氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。
    • 8. 发明授权
    • Halftone type phase shift mask blank and phase shift mask thereof
    • 半色调型相移掩模空白及其相移掩模
    • US07169513B2
    • 2007-01-30
    • US10370713
    • 2003-02-24
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • Yuuki ShiotaOsamu NozawaHideaki Mitsui
    • G03F1/00
    • G03F1/32G03F1/84
    • A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
    • 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。