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41. 发明授权

US6020238A Method of fabricating a high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory 失效
标题翻译：制造用于低电压非易失性存储器的高介电常数多晶硅介电结构的方法
公开(公告)号：US6020238A
公开(公告)日：2000-02-01
申请号：US978107
申请日：1997-11-25
申请人： Yue-Song He , Effiong Ibok
发明人： Yue-Song He , Effiong Ibok
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8247
CPC分类号： H01L29/66825 , H01L21/28273
摘要： A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a nitride layer 12 on a floating gate 10 and a high dielectric constant layer 14 on the nitride layer 12. A control gate 18 may be formed directly on the high dielectric constant layer 14, or on a thin layer 16 of an oxide or an oxynitride on the high dielectric constant layer 14.
摘要翻译：在非易失性存储器中制造多晶硅介质结构的方法包括在氮化物层12上的浮置栅极10和高介电常数层14上形成氮化物层12的步骤。控制栅极18可直接形成在高介电常数层14或在高介电常数层14上的氧化物或氧氮化物的薄层16上。

42. 发明授权

US5940718A Nitridation assisted polysilicon sidewall protection in self-aligned shallow trench isolation 失效
标题翻译：在自对准浅沟槽隔离中，氮化辅助多晶硅侧壁保护
公开(公告)号：US5940718A
公开(公告)日：1999-08-17
申请号：US119715
申请日：1998-07-20
申请人： Effiong Ibok , Yue-Song He , Yowjuang W. Liu
发明人： Effiong Ibok , Yue-Song He , Yowjuang W. Liu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76232
摘要： A method for fabricating a semiconductor device including a silicon substrate and plural silicon stacks thereon includes forming a nitride shield layer on the substrate and stacks to cover the stacks, such that the stacks are protected from loss of critical dimension during subsequent isolation trench formation and oxidation. In other words, the edge of each stack, and thus the critical dimension of the silicon layers of the stack, is protected from oxidation by the nitride shield layer.
摘要翻译：一种用于制造包括硅衬底和其上的多个硅堆叠的半导体器件的方法包括在衬底上形成氮化物屏蔽层并堆叠以覆盖堆叠，使得在随后的隔离沟槽形成和氧化期间保护堆叠免受临界尺寸的损失。换句话说，每个堆叠的边缘以及因此堆叠的硅层的临界尺寸被氮化物屏蔽层防止氧化。

43. 发明授权

US08330189B2 One-time programmable memory and method for making the same 有权
标题翻译：一次性可编程存储器及其制作方法
公开(公告)号：US08330189B2
公开(公告)日：2012-12-11
申请号：US12819566
申请日：2010-06-21
申请人： Harry S. Luan , Yue-Song He , Ting-Wah Wong
发明人： Harry S. Luan , Yue-Song He , Ting-Wah Wong
IPC分类号： H01L23/535
CPC分类号： H01L27/112 , G11C17/16 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
摘要翻译：由金属绝缘体半导体电池形成的一次可编程非易失性存储器。电池处于形成在半导体衬底中的导电栅极线和交叉掺杂半导体线的交叉点。

44. 发明授权

US07808032B2 Integrated circuits with substrate protrusions, including (but not limited to) floating gate memories 有权
标题翻译：具有衬底突起的集成电路，包括（但不限于）浮动栅极存储器
公开(公告)号：US07808032B2
公开(公告)日：2010-10-05
申请号：US12145681
申请日：2008-06-25
申请人： Yue-Song He , Len Mei
发明人： Yue-Song He , Len Mei
IPC分类号： H01L21/8247 , H01L29/788
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/7854 , H01L29/7881
摘要： A floating gate memory cell's channel region (104) is at least partially located in a fin-like protrusion (110P) of a semiconductor substrate. The floating gate's top surface may come down along at least two sides of the protrusion to a level below the top (110P-T) of the protrusion. The control gate's bottom surface may also comes down to a level below the top of the protrusion. The floating gate's bottom surface may comes down to a level below the top of the protrusion by at least 50% of the protrusion's height. The dielectric (120) separating the floating gate from the protrusion can be at least as thick at the top of the protrusion as at a level (L2) which is below the top of the protrusion by at least 50% of the protrusion's height. A very narrow fin or other narrow feature in memory and non-memory integrated circuits can be formed by providing a first layer (320) and then forming spacers (330) from a second layer without photolithography on sidewalls of features made from the first layer. The narrow fin or other feature are then formed without further photolithography in areas between the adjacent spacers. More particularly, a third layer (340) is formed in these areas, and the first layer and the spacers are removed selectively to the third layer. The third layer is used as a mask to form the narrow features.
摘要翻译：浮动栅极存储单元的沟道区域（104）至少部分地位于半导体衬底的鳍状突起（110P）中。浮栅的顶面可以沿着突起的至少两侧下降到突起的顶部（110P-T）的下方。控制门的底面也可能下降至低于突起顶部的水平。浮动门的底面可能下降到突起顶部以下至少50％的高度。将浮动栅极与突起分离的电介质（120）可以在突起的顶部处至少与在突起的顶部下方的突起高度的至少50％的水平（L2）相同。存储器和非存储器集成电路中的非常狭窄的鳍或其他窄特征可以通过提供第一层（320）然后从第二层形成间隔物（330）而形成，而不需要在由第一层制成的特征的侧壁上进行光刻。然后在相邻间隔物之间的区域中形成窄鳍片或其它特征，而无需进一步的光刻。更具体地，在这些区域中形成第三层（340），并且第一层和间隔物被选择性地去除到第三层。第三层用作掩模以形成窄特征。

45. 发明申请

US20090101961A1 MEMORY DEVICES WITH SPLIT GATE AND BLOCKING LAYER 审中-公开
标题翻译：具有分离门和阻塞层的存储器件
公开(公告)号：US20090101961A1
公开(公告)日：2009-04-23
申请号：US11876557
申请日：2007-10-22
申请人： Yue-Song He , Len Mei
发明人： Yue-Song He , Len Mei
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7881 , H01L29/42328 , H01L29/42344 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： The present disclosure provides a memory device having a cell stack and a select gate formed adjacent to the cell stack. The cell stack includes a tunneling dielectric layer, a charge storage layer, a blocking dielectric layer, a tantalum-nitride layer, and a control gate layer. When a positive bias is applied to the control gate and the select gate, negative charges are injected from a channel region of a substrate through the tunneling dielectric layer and into the charge storage layer to thereby store the negative charges in the charge storage layer. When a negative bias is applied to the control gate, negative charges are tunneled from the charge storage layer to the channel region of the substrate through the tunneling dielectric layer.
摘要翻译：本公开提供了一种存储器件，其具有与单元堆叠相邻形成的单元堆叠和选择栅极。电池堆包括隧道介电层，电荷存储层，阻挡介电层，氮化钽层和控制栅层。当向控制栅极和选择栅极施加正偏压时，从衬底的沟道区域通过隧道电介质层注入负电荷并进入电荷存储层，从而将负电荷存储在电荷存储层中。当向控制栅极施加负偏压时，负电荷通过隧道电介质层从电荷存储层隧穿到衬底的沟道区。

46. 发明授权

US07511333B2 Nonvolatile memory cell with multiple floating gates and a connection region in the channel 有权
标题翻译：具有多个浮动栅极和通道中的连接区域的非易失性存储单元
公开(公告)号：US07511333B2
公开(公告)日：2009-03-31
申请号：US11246447
申请日：2005-10-06
申请人： Yue-Song He , Chung Wai Leung , Jin-Ho Kim , Kwok Kwok Ng
发明人： Yue-Song He , Chung Wai Leung , Jin-Ho Kim , Kwok Kwok Ng
IPC分类号： H01L27/115 , H01L29/66
CPC分类号： H01L29/42336 , G11C16/0458 , G11C16/0491 , H01L27/115 , H01L27/11521
摘要： A memory cell (110) has a plurality of floating gates (120L, 120R). The channel region (170) comprises a plurality of sub-regions (220L, 220R) adjacent to the respective floating gates, and a connection region (210) between the floating gates. The connection region has the same conductivity type as the source/drain regions (160) to increase the channel conductivity. Therefore, the floating gates can be brought closer together even though the inter-gate dielectric (144) becomes thick between the floating gates, weakening the control gate's (104) electrical field in the channel.
摘要翻译：存储单元（110）具有多个浮动栅极（120L，120R）。沟道区域（170）包括与相应浮动栅极相邻的多个子区域（220L，220R），以及浮置栅极之间的连接区域（210）。连接区域具有与源极/漏极区域（160）相同的导电类型以增加沟道导电性。因此，即使栅极间电介质（144）在浮置栅极之间变厚，削弱了沟道中的控制栅极（104）电场，浮动栅极也可以更靠近在一起。

47. 发明授权

US07084458B1 Semiconductor device having triple LDD structure and lower gate resistance formed with a single implant process 有权
标题翻译：半导体器件具有三重LDD结构和较低的栅极电阻，由单一的注入工艺形成
公开(公告)号：US07084458B1
公开(公告)日：2006-08-01
申请号：US11120690
申请日：2005-05-02
申请人： Imran Khan , Jianshi Wang , Yue-Song He , Jun Kang
发明人： Imran Khan , Jianshi Wang , Yue-Song He , Jun Kang
IPC分类号： H01L29/76
CPC分类号： H01L29/665 , H01L29/66598
摘要： A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabrication method increases the surface area of the gate structure of the semiconductor device that is available for silicide to be formed, leading to lower gate resistance.
摘要翻译：公开了一种制造具有三重LDD（横向漫射掺杂剂）结构的半导体器件的方法。这种制造方法需要单个注入工艺，导致制造成本和制造时间的降低。此外，该制造方法增加可用于要形成的硅化物的半导体器件的栅极结构的表面积，导致较低的栅极电阻。

48. 发明授权

US06963506B1 Circuit and technique for accurately sensing low voltage flash memory devices 有权
标题翻译：用于精确检测低压闪存器件的电路和技术
公开(公告)号：US06963506B1
公开(公告)日：2005-11-08
申请号：US10679179
申请日：2003-10-03
申请人： Zhigang Wang , Nian Yang , Yue-Song He
发明人： Zhigang Wang , Nian Yang , Yue-Song He
IPC分类号： G11C16/06 , G11C16/26 , G11C16/30
CPC分类号： G11C16/30 , G11C16/26
摘要： An exemplary sensing circuit for sensing the current drawn by a target memory cell comprises a first transistor connected across a first node and a second node, a load connected across the second node and a third node, and a voltage boosting circuit coupled to a supply voltage, wherein the voltage boosting circuit supplies a voltage at the third node which is greater than the supply voltage.
摘要翻译：用于感测由目标存储器单元汲取的电流的示例性感测电路包括跨越第一节点和第二节点连接的第一晶体管，跨过第二节点连接的负载和第三节点，以及耦合到电源电压的升压电路，其中所述升压电路在所述第三节点处提供大于所述电源电压的电压。

49. 发明授权

US06963106B1 Memory array with memory cells having reduced short channel effects 有权
标题翻译：具有存储单元的存储器阵列具有减少的短通道效应
公开(公告)号：US06963106B1
公开(公告)日：2005-11-08
申请号：US10839626
申请日：2004-05-04
申请人： Richard Fastow , Yue-Song He , Kazuhiro Mizutani , Timothy Thurgate
发明人： Richard Fastow , Yue-Song He , Kazuhiro Mizutani , Timothy Thurgate
IPC分类号： H01L21/8247 , H01L27/115 , H01L21/788
CPC分类号： H01L27/11521 , H01L27/115
摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory array comprises a step of removing a dielectric material from an isolation region situated in a substrate to expose a trench, where the trench is situated between a first source region and a second source region, where the trench defines sidewalls in the substrate. The method further comprises implanting an N type dopant in the first source region, the second source region, and the sidewalls of the trench, where the N type dopant forms an N+ type region. The method further comprises implanting a P type dopant in the first source region, the second source region, and the sidewalls of the trench, where the P type dopant forms a P type region, and where the P type region is situated underneath the N+ type region.
摘要翻译：根据一个示例性实施例，一种用于制造浮动栅极存储器阵列的方法包括从位于衬底中的隔离区域去除介电材料以暴露沟槽的步骤，其中沟槽位于第一源区域和第二源极之间区域，其中沟槽限定衬底中的侧壁。该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入N型掺杂剂，其中N型掺杂剂形成N +型区域。该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入P型掺杂剂，其中P型掺杂剂形成P型区域，并且其中P型区域位于N +型下方地区。

50. 发明授权

US06939770B1 Method of fabricating semiconductor device having triple LDD structure and lower gate resistance formed with a single implant process 失效
标题翻译：制造具有三重LDD结构的半导体器件的方法和用单个注入工艺形成的较低的栅极电阻
公开(公告)号：US06939770B1
公开(公告)日：2005-09-06
申请号：US10618514
申请日：2003-07-11
申请人： Imran Khan , Jianshi Wang , Yue-Song He , Jun Kang
发明人： Imran Khan , Jianshi Wang , Yue-Song He , Jun Kang
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L29/66598
摘要： A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabrication method increases the surface area of the gate structure of the semiconductor device that is available for silicide to be formed, leading to lower gate resistance.
摘要翻译：公开了一种制造具有三重LDD（横向漫射掺杂剂）结构的半导体器件的方法。这种制造方法需要单个注入工艺，导致制造成本和制造时间的降低。此外，该制造方法增加可用于要形成的硅化物的半导体器件的栅极结构的表面积，导致较低的栅极电阻。

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