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41. 发明申请

US20090273859A1 FORMING A POLE TIP TOPOGRAPHY 审中-公开
标题翻译：形成一个尖端的地图
公开(公告)号：US20090273859A1
公开(公告)日：2009-11-05
申请号：US12114502
申请日：2008-05-02
申请人： Eric W. Flint , Cherngye Hwang , Kenneth M.T. Liu , Eduardo Torres Mireles , Yongjian Sun
发明人： Eric W. Flint , Cherngye Hwang , Kenneth M.T. Liu , Eduardo Torres Mireles , Yongjian Sun
IPC分类号： G11B5/60
CPC分类号： G11B5/3163 , G11B5/1871 , G11B5/3116
摘要： A method of forming a pole tip topography associated with an air bearing surface (ABS) of a hard disk drive slider is disclosed. The method etches an exposed pole tip region of an ABS at a first angle with respect to the ABS to remove an irregularity from the exposed pole tip region and to flatten the exposed pole tip region. The exposed pole tip region lacks a photo-resist layer. The method also includes etching the flattened exposed pole tip region of the ABS at a second angle with respect to the ABS to form a recession with reference to the ABS.
摘要翻译：公开了一种与硬盘驱动器滑块的空气轴承表面（ABS）相关联的形成极尖形状的方法。该方法相对于ABS以第一角度蚀刻ABS的暴露的极尖端区域以从暴露的极尖端区域去除不规则性并使暴露的极尖端区域变平。曝光的极尖区域缺少光致抗蚀剂层。该方法还包括相对于ABS以相对于ABS的第二角度蚀刻ABS的平坦化的露出的极尖端区域，以相对于ABS形成凹陷。

42. 发明授权

US07560225B2 Method of forming uniform features using photoresist 失效
标题翻译：使用光刻胶形成均匀特征的方法
公开(公告)号：US07560225B2
公开(公告)日：2009-07-14
申请号：US10448501
申请日：2003-05-29
申请人： Omar Eduardo Montero Camacho , Pei-C Chen , Cherngye Hwang , Diana Perez , Eric Yongjian Sun
发明人： Omar Eduardo Montero Camacho , Pei-C Chen , Cherngye Hwang , Diana Perez , Eric Yongjian Sun
IPC分类号： G03F7/40 , B44C1/22
CPC分类号： G11B5/3173 , G03F7/40 , G03F7/405 , G11B5/102
摘要： A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.
摘要翻译：描述使用光致抗蚀剂作为掩模的离子铣削的方法。在优选实施例中，本发明用于制造用于磁存储装置的滑块上的空气轴承特征。根据本发明，如在包括烘烤步骤的现有技术中，应用，显影和去除光致抗蚀剂（液体或干燥）。本发明的实施例包括除了在光刻工艺中使用的任何烘烤步骤之外的额外的烘烤步骤。额外的烘烤步骤优选在离子研磨之前立即进行。根据本发明的另外的烘烤步骤产生离子研磨深度的均匀性，这被认为是通过光致抗蚀剂中的挥发性物质例如水的还原引起的。当将本发明用作离子铣削制造过程的一部分时，滑块上的空气轴承特征更加均匀，这提高了整体的质量和性能。

43. 发明申请

US20080273270A1 Forming a planarized surface for at least one bar of sliders 有权
标题翻译：形成用于至少一个滑块的平坦化表面
公开(公告)号：US20080273270A1
公开(公告)日：2008-11-06
申请号：US11800127
申请日：2007-05-03
申请人： Cherngye Hwang , Jorge Goitia , Kenneth L. Larson , Dennis R. McKean
发明人： Cherngye Hwang , Jorge Goitia , Kenneth L. Larson , Dennis R. McKean
IPC分类号： G11B5/60 , G11B5/147 , B29C65/00
CPC分类号： G11B5/4853 , G11B5/102 , G11B5/3163 , G11B5/3173 , Y10T29/49027 , Y10T29/49039 , Y10T29/49041 , Y10T29/49055 , Y10T29/53165 , Y10T156/10
摘要： A method for forming a planarized surface for at least one bar of sliders for utilization in a hard disk drive is disclosed. In general, at least one bar of sliders is placed on an adhesive layer. A single thermoplastic layer is then provided above the at least one bar of sliders. The single thermoplastic layer is then heated to a softening temperature such that the single thermoplastic layer will flow between the at least one bar of sliders. The single thermoplastic layer is then cooled to form a planarized surface of both said single thermoplastic layer and said at least one bar of sliders at said adhesive layer.
摘要翻译：公开了一种用于形成至少一个用于硬盘驱动器的滑块的平面化表面的方法。通常，将至少一个滑杆放置在粘合剂层上。然后在至少一个滑杆上方设置单个热塑性层。然后将单个热塑性层加热到软化温度，使得单个热塑性层将在至少一个滑块之间流动。然后将单个热塑性层冷却以在所述粘合剂层处形成所述单一热塑性层和所述至少一个滑块条的平坦化表面。

44. 发明授权

US07396636B2 Segmented resist islands for photolithography on single sliders 失效
标题翻译：在单个滑块上用于光刻的分段抗蚀岛
公开(公告)号：US07396636B2
公开(公告)日：2008-07-08
申请号：US10928038
申请日：2004-08-27
申请人： Cherngye Hwang , Kim Y. Lee , Dennis R. McKean , Gary Suzuki
发明人： Cherngye Hwang , Kim Y. Lee , Dennis R. McKean , Gary Suzuki
IPC分类号： G03F7/00
CPC分类号： G11B5/6005 , G11B5/3163 , G11B5/3173
摘要： A method for creating segmented resist islands for photolithography on single sliders is disclosed. The method includes ramping the temperature of a number of single sliders, to a temperature that is below a proper softbake temperature. The single sliders reside in a divider and the single sliders and walls of the divider have a layer of resist deposited on them. Coarse lithography is then performed to remove the resist from above portions of the walls of the divider; and the temperature of the single sliders, the resist and the divider is then ramped to a proper softbake temperature.
摘要翻译：公开了一种用于在单个滑块上创建用于光刻的分割的抗蚀岛的方法。该方法包括将多个单个滑块的温度升高到低于适当的软烘烤温度的温度。单个滑块位于分隔器中，分隔器的单个滑块和壁具有沉积在其上的抗蚀剂层。然后进行粗光刻以从分隔器的壁的上部的部分去除抗蚀剂; 然后将单个滑块，抗蚀剂和分隔器的温度倾斜到适当的软烘烤温度。

45. 发明授权

US07296420B2 Direct cooling pallet tray for temperature stability for deep ion mill etch process 有权
标题翻译：直接冷却托盘托盘用于深度离子磨蚀刻蚀工艺的温度稳定性
公开(公告)号：US07296420B2
公开(公告)日：2007-11-20
申请号：US11001795
申请日：2004-12-02
申请人： Pei Chen , Jorge Goitia , Cherngye Hwang , Bigal Leung , Diana Perez , Yongjian Sun
发明人： Pei Chen , Jorge Goitia , Cherngye Hwang , Bigal Leung , Diana Perez , Yongjian Sun
IPC分类号： F25D25/00 , F25D17/06 , F25D23/12
CPC分类号： H01L21/67109 , H01L21/67333
摘要： Embodiments of the present invention are directed to a pallet assembly which facilitates direct cooling of the wafer carrier. In one embodiment, the pallet assembly comprises a frame which holds at least one carrier of a component. The pallet assembly further comprises a tray which is operable for being mechanically coupled with the frame. The tray comprises at least one discreet region which corresponds with the carrier when the tray is coupled with the frame. In embodiments of the present invention, the discreet region comprises at least one hole extending through the tray for permitting a coolant medium to dissipate heat from the carrier.
摘要翻译：本发明的实施例涉及一种有助于晶片载体的直接冷却的托盘组件。在一个实施例中，托盘组件包括保持部件的至少一个托架的框架。托盘组件还包括可操作以与框架机械联接的托盘。当托盘与框架联接时，该托盘包括至少一个对应于托架的离散区域。在本发明的实施例中，离散区域包括延伸穿过托盘的至少一个孔，用于允许冷却剂介质从载体中散发热量。

46. 发明授权

US07137190B2 Method for fabricating a magnetic transducer with a corrosion resistant layer on metallic thin films by nitrogen exposure 失效
标题翻译：通过氮气曝光在金属薄膜上制造具有耐腐蚀层的磁换能器的方法
公开(公告)号：US07137190B2
公开(公告)日：2006-11-21
申请号：US10264663
申请日：2002-10-03
申请人： Yiping Hsiao , Cherngye Hwang , Jila Tabib
发明人： Yiping Hsiao , Cherngye Hwang , Jila Tabib
IPC分类号： G11B5/127 , H01R31/00
CPC分类号： G11B5/3169 , G11B5/102 , G11B5/1871 , G11B5/3106 , G11B5/3163 , G11B5/40 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49798
摘要： A process is described for fabricating magnetic transducers with metallic thin films with a corrosion resistant surface produced by exposing the thin films to a nitrogen in a plasma chamber. The exposure to the nitrogen is believed to increase the corrosion resistance of the metallic thin films by causing nitrides to form in a thin surface region. In the preferred embodiment the thin film metals of a magnetic transducer are treated with the nitrogen after being cut from the wafer and lapped. Typical metals used in magnetic transducers are NiMn, FeMn, NiFe, cobalt, CoFe, copper, IrMn and PtMn. The films may be further protected by the addition of prior art protective layers such as carbon.
摘要翻译：描述了一种用于制造具有金属薄膜的磁性换能器的方法，其具有通过将薄膜暴露于等离子体室中的氮而产生的耐腐蚀表面。认为暴露于氮气可以通过在较薄的表面区域形成氮化物来提高金属薄膜的耐腐蚀性。在优选实施例中，在从晶片切割并研磨之后，用氮气处理磁换能器的薄膜金属。在磁换能器中使用的典型金属是NiMn，FeMn，NiFe，钴，CoFe，铜，IrMn和PtMn。可以通过添加现有技术的保护层例如碳来进一步保护膜。

47. 发明授权

US6023840A Method of manufacturing a thin film magnetic head having an ultrathin silicon wear coating 有权
标题翻译：制造具有超薄硅耐磨涂层的薄膜磁头的方法
公开(公告)号：US6023840A
公开(公告)日：2000-02-15
申请号：US144000
申请日：1998-08-31
申请人： Pei C. Chen , Grace Lim Gorman , Cherngye Hwang , Vedantham Raman , Randall George Simmons
发明人： Pei C. Chen , Grace Lim Gorman , Cherngye Hwang , Vedantham Raman , Randall George Simmons
IPC分类号： G11B5/10 , G11B5/187 , G11B5/255 , G11B5/31 , G11B5/40 , G11B5/60 , G11B21/21 , G11B5/42
CPC分类号： G11B5/40 , G11B5/10 , G11B5/255 , G11B5/3106 , G11B5/6005 , Y10T29/49041 , Y10T29/49044
摘要： A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.
摘要翻译：为磁头组件提供单层耐磨涂层。单层是硅或硅基材料，其厚度在30-75范围内。单层可以通过使用DC磁控管的单个沉积步骤形成。单层耐磨涂层改善了磁头组件的磨损性能，并保护了磁头的一个或多个敏感元件，而不会明显地减小间隔损耗。

48. 发明授权

US5808832A Ultrathin silicon wear coating for a slider and thin film magnetic head elements at an ABS 失效
标题翻译：超薄硅耐磨涂层用于滑块和薄膜磁头元件的ABS
公开(公告)号：US5808832A
公开(公告)日：1998-09-15
申请号：US607892
申请日：1996-02-27
申请人： Pei C. Chen , Grace Lim Gorman , Cherngye Hwang , Vedantham Raman , Randall George Simmons
发明人： Pei C. Chen , Grace Lim Gorman , Cherngye Hwang , Vedantham Raman , Randall George Simmons
IPC分类号： G11B5/10 , G11B5/187 , G11B5/255 , G11B5/31 , G11B5/40 , G11B5/60 , G11B21/21
CPC分类号： G11B5/40 , G11B5/10 , G11B5/255 , G11B5/3106 , G11B5/6005 , Y10T29/49041 , Y10T29/49044
摘要： A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.
摘要翻译：为磁头组件提供单层耐磨涂层。单层是硅或硅基材料，其厚度在30-75范围内。单层可以通过使用DC磁控管的单个沉积步骤形成。单层耐磨涂层改善了磁头组件的磨损性能，并保护了磁头的一个或多个敏感元件，而不会明显地减小间隔损耗。

49. 发明授权

US5614727A Thin film diode having large current capability with low turn-on voltages for integrated devices 失效
标题翻译：具有大电流能力的薄膜二极管，集成器件的低导通电压
公开(公告)号：US5614727A
公开(公告)日：1997-03-25
申请号：US473036
申请日：1995-06-06
申请人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
发明人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
IPC分类号： H01L29/24 , H01L29/267 , H01L29/45 , H01L29/861 , H01L29/12
CPC分类号： H01L29/45 , H01L29/242 , H01L29/267 , H01L29/861
摘要： A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.
摘要翻译：提供具有大电流能力和低匝导通电压的薄膜二极管和制造方法作为抵抗静电放电的开关或保护装置，诸如磁阻传感器等集成器件。具有p型性质的NiOx的第一半导体薄膜层设置在任意的基板上，例如氧化铝，玻璃，二氧化硅，硅等。氧化锡或氧化铟或其它透明氧化物的第二半导电层被接合到第一层以形成p / n结。在一种制造方法中，在部分氧气压力下以溅射工艺形成p / n结，以控制膜的化学计量。金和铟铟触点连接到电影以提供电触点。该装置封装在保护涂层中，并与静电放电的电子设备并联连接。

50. 发明授权

US5315468A Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
标题翻译：具有用于交换偏置的反铁磁层的磁阻传感器
公开(公告)号：US5315468A
公开(公告)日：1994-05-24
申请号：US920943
申请日：1992-07-28
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。向Ni-Mn合金中添加铬提高了耐腐蚀性。

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