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    • 43. 发明授权
    • Thin-film device and method of manufacturing same
    • 薄膜器件及其制造方法
    • US07652349B2
    • 2010-01-26
    • US11583074
    • 2006-10-19
    • Hajime KuwajimaMasahiro MiyazakiAkira Furuya
    • Hajime KuwajimaMasahiro MiyazakiAkira Furuya
    • H01L29/41
    • H01L28/40H01L27/13
    • A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.
    • 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括:下导体层; 电介质膜,其一部分设置在下导体层上; 以及设置在电介质膜上的上导体层。 下导体层具有顶表面,侧表面和由顶表面和侧表面形成的角部。 上导体层包括具有与下导体层的顶表面相对的底表面的上电极部分,介电膜设置在其间。 当从上部导体层的上方观察时,上部​​电极部的底面的周围位于下部导体层的上表面的周围的内侧,而不会接触下部导体层的上表面的周围。
    • 44. 发明授权
    • Method of making a piezoelectric device
    • 制造压电元件的方法
    • US07636994B2
    • 2009-12-29
    • US11360394
    • 2006-02-24
    • Kenichi TochiMasahiro MiyazakiTakao NoguchiHiroshi YamazakiKen UnnoHirofumi Sasaki
    • Kenichi TochiMasahiro MiyazakiTakao NoguchiHiroshi YamazakiKen UnnoHirofumi Sasaki
    • H01L41/22H01L41/00H03H9/00
    • H01L41/332Y10T29/42Y10T29/43Y10T29/435Y10T29/49126Y10T29/49155
    • The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
    • 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备(压电器件)74的方法中,形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧 。 因此,从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时,蚀刻液在其到达压电膜52A之前就绕过电极膜46A。 也就是说,通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此,在制造电子设备74的方法中,蚀刻溶液不太可能到达压电膜52A。 这显着地抑制了压电膜52A的溶解情况,并且实现了所制作的压电装置74的特性的改善。
    • 45. 发明授权
    • Thin-film device and method of manufacturing same
    • 薄膜器件及其制造方法
    • US07608881B2
    • 2009-10-27
    • US11588321
    • 2006-10-27
    • Hajime KuwajimaMasahiro MiyazakiAkira Furuya
    • Hajime KuwajimaMasahiro MiyazakiAkira Furuya
    • H01L27/108H01L29/94
    • H01L28/40
    • A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.
    • 薄膜器件包括:衬底; 由绝缘材料制成并设置在基板上的扁平薄膜; 以及设置在平坦化膜上的电容器。 电容器包括:设置在平坦化膜上的下导体层; 设置在下导体层上的电介质膜; 和设置在电介质膜上的上导体层。 电介质膜的厚度在0.02〜1μm的范围内,小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于衬底顶表面的表面粗糙度,等于或小于电介质膜的厚度。 下导体层的上表面的最大高度的表面粗糙度等于或小于电介质膜的厚度。
    • 46. 发明申请
    • METHOD OF JOINING MEMBERS
    • 加入会员的方法
    • US20090139089A1
    • 2009-06-04
    • US12296151
    • 2007-04-05
    • Masahiro MiyazakiYasuji Kawamata
    • Masahiro MiyazakiYasuji Kawamata
    • B21D39/06F16L41/00
    • B21D39/06B21D39/20F16L5/00F16L23/0283Y10T29/49375Y10T29/49938Y10T403/46
    • A method for joining members capable of firmly joining a first member made of a tubular member, such as, e.g., a pipe, to a second member is provided. The following items are prepared: a tubular first member 1 having a polygonal cross-section and a hollow portion 3, a second member 5 having an insertion hole 6 with a cross-sectional shape corresponding to a cross-sectional shape of the first member 1, and a split die 11 circumferentially split into multiple segments at positions corresponding to flat wall portions 1a of the first member 1. Then, the first member 1 is inserted into the insertion hole 6 of the second member 5, and the split die 11 is disposed in the hollow portion 3 of the first member 1. Next, each segment 11a of the split die 11 is moved radially outward of the first member 1 toward each corner 1b of the first member. As a result, an insertion portion 2a of the first member 1 inserted in the insertion hole 6 and both sections 2b and 2b axially adjacent to the insertion portions 2a are expanded to join the first member 1 and the second member 5.
    • 提供了一种用于将能够将例如管状的管状构件制成的第一构件牢固地接合到第二构件的构件的接合方法。 准备以下项目:具有多边形横截面的管状第一构件1和中空部分3,具有插入孔6的第二构件5,其具有对应于第一构件1的横截面形状的横截面形状 以及在与第一部件1的平壁部1a对应的位置周向地分割成多个部分的分割模具11.然后,将第一部件1插入到第二部件5的插入孔6中,分割模具11 配置在第一构件1的中空部3中。接着,分割模11的各段11a朝向第一构件的各个角部1b向第一构件1的径向外侧移动。 结果,插入在插入孔6中的第一构件1的插入部分2a和与插入部分2a轴向相邻的两个部分2b和2b被扩大以使第一构件1和第二构件5接合。