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41. 发明授权

US08829500B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08829500B2
公开(公告)日：2014-09-09
申请号：US13498552
申请日：2010-09-27
申请人： Yoshinobu Ono
发明人： Yoshinobu Ono
IPC分类号： H01L35/24
CPC分类号： H01L51/529 , H01L27/3202 , H01L27/3204 , H01L51/52 , H01L51/524
摘要： Provided is a light emitting device having a mechanism capable of efficiently dissipating heat kept in the device to the outside. The light emitting device includes: a first substrate including a heat radiation layer; a second substrate exhibiting light transmittance; and a plurality of organic EL elements provided, between the first substrate and the second substrate to emit light toward the second substrate. The second substrate includes fibrous, thermally conductive wires dispersively arranged therein, and the thermally conductive wires have a diameter of 0.4 μm or less and have a thermal conductivity higher than the remaining component of the second substrate excluding the thermally conductive wires.
摘要翻译：提供一种发光装置，其具有能够有效地将保存在该装置中的热量散发到外部的机构。发光装置包括：第一基板，包括散热层; 表现出透光率的第二基板; 以及设置在所述第一基板和所述第二基板之间以朝向所述第二基板发光的多个有机EL元件。第二基板包括分散布置在其中的纤维状导热丝，并且导热丝的直径为0.4μm以下，并且具有高于除了导热丝之外的第二基板的剩余部件的热导率。

42. 发明授权

US08628986B2 Organic electroluminescent element and method for manufacturing the same 失效
标题翻译：有机电致发光元件及其制造方法
公开(公告)号：US08628986B2
公开(公告)日：2014-01-14
申请号：US12670563
申请日：2008-07-24
申请人： Satoshi Amamiya , Teruyuki Matsue , Yoshinobu Ono
发明人： Satoshi Amamiya , Teruyuki Matsue , Yoshinobu Ono
IPC分类号： H01L51/52
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/0005 , H01L51/0012 , H01L51/50 , H01L51/5004 , H01L51/56 , H01L2251/5392
摘要： The present invention provides an organic electroluminescence (EL) element that suppresses leakage current flowing between an upper electrode and an under electrode through an organic layer. The organic EL element (51) is provided at a pixel region (R11) surrounded by a bank (3) on the substrate, and comprises: an organic layer (9) including at least one layer of the light-emitting layer (6); an upper electrode (7) and an under electrode (2) which hold the organic layer (9) therebetween; and a leakage current block layer (5) formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13), and formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13). The electric resistance of the leakage current block layer (5) in a thickness direction of the substrate is higher than the electric resistance of the organic layer (9) provided between the leakage current block layer (5) and the first electrode (2) in the thickness direction of the substrate.
摘要翻译：本发明提供一种有机电致发光（EL）元件，其通过有机层抑制在上电极和下电极之间流动的漏电流。有机EL元件（51）设置在由衬底（3）围绕的像素区域（R11）上，包括：包含至少一层发光层（6）的有机层（9） ; 在其间保持有机层（9）的上电极（7）和下电极（2）以及在像素区域（R11）和堤岸区域（R13）之间的边界区域（R12）处在上电极（7）和下电极（2）之间形成的漏电流阻挡层（5）像素区域（R11）和堤岸区域（R13）之间的边界区域（R12）的上部电极（7）和下部电极（2）。漏电流阻挡层（5）在基板的厚度方向上的电阻比设置在漏电流阻挡层（5）和第一电极（2）之间的有机层（9）的电阻高基板的厚度方向。

43. 发明申请

US20130181205A1 ORGANIC EL ELEMENT 有权
标题翻译：有机EL元素
公开(公告)号：US20130181205A1
公开(公告)日：2013-07-18
申请号：US13811107
申请日：2011-07-20
申请人： Shoji Mima , Yoshinobu Ono
发明人： Shoji Mima , Yoshinobu Ono
IPC分类号： H01L51/56 , H01L51/50
CPC分类号： H01L51/56 , C08G61/02 , C08G2261/11 , C08G2261/124 , C08G2261/135 , C08G2261/1412 , C08G2261/1424 , C08G2261/1426 , C08G2261/148 , C08G2261/314 , C08G2261/3142 , C08G2261/3162 , C08G2261/411 , C08G2261/514 , C08G2261/76 , C08G2261/95 , H01L51/0005 , H01L51/0022 , H01L51/0039 , H01L51/0043 , H01L51/5032 , H01L51/5048 , H01L51/5092 , H01L51/5221 , H05B33/26
摘要： An object of the invention is to provide an organic EL element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary pressure. An organic EL element of a preferable embodiment is an organic EL element including a supporting substrate, an anode, a light-emitting layer, an electron injection layer, and a cathode in this order, in which the electron injection layer is formed by applying an ink including an ionic polymer so as to form a film, and the cathode is formed by applying an ink including a material which forms the cathode so as to form a film or transferring a conductive thin film which forms the cathode.
摘要翻译：本发明的目的是提供一种在大约普通压力的气氛中使用相对稳定的新型电子注入材料形成的有机EL元件。优选实施例的有机EL元件是依次包括支撑基板，阳极，发光层，电子注入层和阴极的有机EL元件，其中通过施加电子注入层形成电子注入层包括离子聚合物的油墨以形成膜，阴极通过涂覆包含形成阴极的材料的油墨形成，以便形成膜或转移形成阴极的导电薄膜。

44. 发明申请

US20130122625A1 METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT 有权
标题翻译：制造有机电致发光元件的方法
公开(公告)号：US20130122625A1
公开(公告)日：2013-05-16
申请号：US13810994
申请日：2011-07-15
申请人： Shuichi Sassa , Yoshinobu Ono
发明人： Shuichi Sassa , Yoshinobu Ono
IPC分类号： H01L51/00
CPC分类号： H01L51/0003 , H01L51/0024 , H01L51/5092 , H01L51/56
摘要： A method for manufacturing an organic electroluminescent element that includes an anode (32), a cathode (34), a layered structure placed between the anode and the cathode and formed by stacking a plurality of organic layers including an electron injection layer (44) provided in contact with the cathode, the method including the steps of: preparing a first component (12) in which either the anode alone is or both the anode and at least a part of the organic layers to make up the layered structure are provided on a first substrate (22); preparing a second component (14) in which either the cathode alone is or both the cathode and the rest part to make up the layered structure excluding the part provided in the first component is provided on a second substrate (24); and laminating the first component and the second component to form the layered structure placed between the anode and the cathode, in which the electron injection layer that contains an ionic polymer is formed in the step of preparing the first component or in the step of preparing the second component.
摘要翻译：一种制造有机电致发光元件的方法，其包括阳极（32），阴极（34），位于阳极和阴极之间的层状结构，并且通过堆叠包括电子注入层（44）的多个有机层形成所述方法包括以下步骤：制备第一组分（12），其中单独的阳极或阳极和至少一部分有机层以构成层状结构，其设置在第一基板（22）; 制备第二组分（14），其中单独的阴极或阴极和静止部分两者以构成除了设置在第一组分中的部分之外的层状结构设置在第二衬底上; 并且层压第一部件和第二部件以形成放置在阳极和阴极之间的层状结构，其中在制备第一部件的步骤中形成含有离子聚合物的电子注入层，或者在制备第二部分。

45. 发明授权

US07459326B2 Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效
标题翻译：用于化合物半导体发光器件的制造和外延衬底的方法
公开(公告)号：US07459326B2
公开(公告)日：2008-12-02
申请号：US11495748
申请日：2006-07-31
申请人： Sadanori Yamanaka , Yoshihiko Tsuchida , Yoshinobu Ono , Yasushi Iyechika
发明人： Sadanori Yamanaka , Yoshihiko Tsuchida , Yoshinobu Ono , Yasushi Iyechika
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/14
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译：为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层。通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构，提高空穴注入发光层结构的效率，从而提高发光效率。

46. 发明授权

US07399687B2 Substrate of gallium nitride single crystal and process for producing the same 有权
标题翻译：氮化镓单晶衬底及其制造方法
公开(公告)号：US07399687B2
公开(公告)日：2008-07-15
申请号：US10546983
申请日：2004-03-04
申请人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
发明人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647
摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.
摘要翻译：本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

47. 发明授权

US06617235B2 Method of manufacturing Group III-V compound semiconductor 失效
标题翻译： III-V族化合物半导体的制造方法
公开(公告)号：US06617235B2
公开(公告)日：2003-09-09
申请号：US08623534
申请日：1996-03-29
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
IPC分类号： H01L213205
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10S438/93
摘要： The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller by volume is used as carrier gas.
摘要翻译：本发明提供一种制造III-V族化合物半导体的方法，其生长p型导电性的含氮III-V族化合物半导体，而在化合物半导体生长之后不进行任何特定的后处理，以及这防止了由于后处理而导致制造发光元件的产量的劣化。第一实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其通过通式In x Ga y Al z N（0> = x> = 1,0> = z> = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于载气是氢浓度为0.5体积％以下的惰性气体。第二实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其由通式In x Ga y Al z N（0> = x> = 1,0，...，y = 1,0 > = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于，使用至少一种选自由化合物卤化氢，卤素和V族元素的化合物和卤素，氢和V族元素的化合物，其中氢的浓度为0.5体积％或更小的惰性气体用作载气。

48. 发明授权

US06488478B2 High pressure fuel pump 失效
标题翻译：高压燃油泵
公开(公告)号：US06488478B2
公开(公告)日：2002-12-03
申请号：US10141119
申请日：2002-05-09
申请人： Yoshinobu Ono , Yukio Takahashi , Hideki Machimura , Minoru Hashida , Masayoshi Kotaki , Takefumi Yamamura
发明人： Yoshinobu Ono , Yukio Takahashi , Hideki Machimura , Minoru Hashida , Masayoshi Kotaki , Takefumi Yamamura
IPC分类号： F04B2708
CPC分类号： F04B1/2021 , F04B1/122 , F04B1/14 , F04B53/164
摘要： An axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump includes a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.
摘要翻译：一种轴向柱塞泵，其通过将燃料限制到构成泵部分的气缸孔并且用油润滑另一部分而不需要波纹管。所述高压燃料泵包括根据旋转斜盘的振动运动往复运动的柱塞，与所述柱塞一起形成泵室的气缸体以及设置在所述柱塞和用于密封从所述泵泄漏的油的气缸孔之间的密封构件室到围绕泵室的腔室，其中油室中的油从高压燃料泵的外部供应。

49. 发明授权

US06472298B2 Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element 有权
标题翻译：层状III-V族化合物半导体，其制造方法和发光元件
公开(公告)号：US06472298B2
公开(公告)日：2002-10-29
申请号：US09998296
申请日：2001-12-03
申请人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341
摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0
摘要翻译：本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0

50. 发明授权

US06411465B1 Rotary head drum assembly with upper, lower and inner drums with cylindrical surfaces of differing outward radial position 失效
标题翻译：旋转头鼓组件具有上，下和内鼓，圆柱形表面具有不同的向外径向位置
公开(公告)号：US06411465B1
公开(公告)日：2002-06-25
申请号：US09531587
申请日：2000-03-20
申请人： Shigeo Obata , Makoto Miyamoto , Atsushi Imai , Yoshinobu Ono , Shinji Tanaka , Hisashi Takahashi , Kenji Kawamata
发明人： Shigeo Obata , Makoto Miyamoto , Atsushi Imai , Yoshinobu Ono , Shinji Tanaka , Hisashi Takahashi , Kenji Kawamata
IPC分类号： G11B1561
CPC分类号： G11B15/61 , G11B15/62
摘要： A rotary head in which the tape running load is decreased by setting the tape path cylindrical surface of an upper drum (12) in a range of winding of a tape (31) at an inner side relative to the tape path cylindrical surface of a lower drum (11). Alternatively, the tape path cylindrical surface of an inner drum (13) in a range of winding of the tape (31) is positioned at an outer side relative to the tape path cylindrical surface of the upper or lower drum.
摘要翻译：一种旋转头，其中通过将上滚筒（12）的带路径圆柱形表面设置在带（31）的卷绕范围内，相对于下层的带路径圆柱形表面的内侧而减小了带运行负载鼓（11）。或者，在带（31）的卷绕范围内的内鼓（13）的带路径圆柱形表面位于相对于上鼓或下鼓的带路径圆柱形表面的外侧。

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