专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08927978B2 Organic EL element 有权
标题翻译：有机EL元件
公开(公告)号：US08927978B2
公开(公告)日：2015-01-06
申请号：US13811107
申请日：2011-07-20
申请人： Shoji Mima , Yoshinobu Ono
发明人： Shoji Mima , Yoshinobu Ono
IPC分类号： H01L51/00 , H01L21/31 , H01L51/50 , H01L51/56 , H05B33/26 , H01L51/52
CPC分类号： H01L51/56 , C08G61/02 , C08G2261/11 , C08G2261/124 , C08G2261/135 , C08G2261/1412 , C08G2261/1424 , C08G2261/1426 , C08G2261/148 , C08G2261/314 , C08G2261/3142 , C08G2261/3162 , C08G2261/411 , C08G2261/514 , C08G2261/76 , C08G2261/95 , H01L51/0005 , H01L51/0022 , H01L51/0039 , H01L51/0043 , H01L51/5032 , H01L51/5048 , H01L51/5092 , H01L51/5221 , H05B33/26
摘要： An object of the invention is to provide an organic electroluminescence (EL) element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary pressure. An organic EL element of a preferable embodiment is an organic EL element including a supporting substrate, an anode, a light-emitting layer, an electron injection layer, and a cathode in this order, in which the electron injection layer is formed by applying an ink including an ionic polymer so as to form a film, and the cathode is formed by applying an ink including a material which forms the cathode so as to form a film or transferring a conductive thin film which forms the cathode.
摘要翻译：本发明的目的是提供一种在大约普通压力的气氛中使用相对稳定的新型电子注入材料形成的有机电致发光（EL）元件。优选实施例的有机EL元件是依次包括支撑基板，阳极，发光层，电子注入层和阴极的有机EL元件，其中通过施加电子注入层形成电子注入层包括离子聚合物的油墨以形成膜，阴极通过涂覆包含形成阴极的材料的油墨形成，以便形成膜或转移形成阴极的导电薄膜。

2. 发明授权

US08097891B2 Group III nitride semiconductor light emitting device and method for producing the same 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08097891B2
公开(公告)日：2012-01-17
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

3. 发明授权

US07897993B2 GaN based luminescent device on a metal substrate 有权
标题翻译： GaN基发光器件在金属衬底上
公开(公告)号：US07897993B2
公开(公告)日：2011-03-01
申请号：US11661266
申请日：2005-08-30
申请人： Yoshinobu Ono , Sadanori Yamanaka
发明人： Yoshinobu Ono , Sadanori Yamanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.
摘要翻译：一种化合物半导体发光装置，其特征在于，包括导电性基板，包含GaN层的化合物半导体功能层，电极，粘合性增强层和接合层，其中，上述导电性基板包括表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料。

4. 发明申请

US20100155754A1 Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same 有权
标题翻译：第III族氮化物半导体发光装置及其制造方法
公开(公告)号：US20100155754A1
公开(公告)日：2010-06-24
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/58 , H01L21/30
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

5. 发明申请

US20100094378A1 PAIN SENSORY NERVE STIMULATION APPARATUS 有权
标题翻译：疼痛感觉神经刺激装置
公开(公告)号：US20100094378A1
公开(公告)日：2010-04-15
申请号：US12570213
申请日：2009-09-30
申请人： Koji INUI , Yasuyuki Takeshima , Jun Motogi , Yoshinobu Ono , Takeshi Kojima , Ryosuke Ushijima , Katsumi Nakaichi , Kazuwa Shibuya
发明人： Koji INUI , Yasuyuki Takeshima , Jun Motogi , Yoshinobu Ono , Takeshi Kojima , Ryosuke Ushijima , Katsumi Nakaichi , Kazuwa Shibuya
IPC分类号： A61N1/34
CPC分类号： A61N1/0456 , A61B5/04001 , A61B5/4824 , A61N1/0472 , A61N1/0502 , A61N1/36017 , A61N1/36021
摘要： A pain sensory nerve stimulation apparatus includes: an electrode portion including: a first electrode, a tip end of which is adapted to be inserted into a skin; and at lease one second electrode which is disposed in a circumference of the first electrode without being electrically conductive with the first electrode, and which is adapted to be in contact with a skin; and a pulse signal supplier, supplying a pulse signal in which an electrical polarity of the first electrode is set as a anode and an electrical polarity of the second electrode is set as a cathode.
摘要翻译：疼痛感觉神经刺激装置包括：电极部，包括：第一电极，其前端适于插入皮肤; 以及至少一个第二电极，其设置在所述第一电极的圆周中，而不与所述第一电极导电，并且适于与皮肤接触; 以及脉冲信号供给器，将设置有第一电极的电极性的脉冲信号设定为阳极，将第二电极的电极性设定为阴极。

6. 发明申请

US20090114944A1 Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device 有权
标题翻译：基板精加工方法，基板加工方法及发光装置
公开(公告)号：US20090114944A1
公开(公告)日：2009-05-07
申请号：US12294963
申请日：2007-03-30
申请人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
发明人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L33/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/30608 , H01L21/308 , H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083 , Y10S977/856
摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.
摘要翻译：本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心已经放置的单个颗粒层通过蚀刻形成。本发明的制造方法包括以下步骤（I）至（V）：（I）通过将颗粒布置在基材上形成单个颗粒层; （II）通过蚀刻所获得的基板来减小每个颗粒的直径; （III）在所得基板上形成由掩模材料构成的薄膜; （IV）从基板上除去粒子，形成具有与粒子的存在直径相当的粒径的孔的掩模，以及（V）通过使用掩模蚀刻基板，在掩模的孔下面的基板上形成具有与掩模的孔的内径相当的直径的孔。发光器件由氮化物半导体制成，并且在光提取表面和/或相对表面的整个表面或部分区域上形成有细孔。

7. 发明申请

US20070295984A1 Gan Based Luminescent Device on a Metal Substrate 有权
标题翻译：甘基发光器件在金属基板上
公开(公告)号：US20070295984A1
公开(公告)日：2007-12-27
申请号：US11661266
申请日：2005-08-30
申请人： Yoshinobu Ono , Sadanori Yamanaka
发明人： Yoshinobu Ono , Sadanori Yamanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.
摘要翻译：一种化合物半导体发光装置，其特征在于，包括：导电性基板; 包括GaN层的化合物半导体功能层; 电极粘合性增强层; 和接合层，其中，上述导电性基板包括表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料。

8. 发明授权

US06225195B1 Method for manufacturing group III-V compound semiconductor 有权
标题翻译： III-V族化合物半导体的制造方法
公开(公告)号：US06225195B1
公开(公告)日：2001-05-01
申请号：US09127922
申请日：1998-08-03
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Masaya Shimizu
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Masaya Shimizu
IPC分类号： C30B2300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method for manufacturing a group III-V compound semiconductor represented by the general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.
摘要翻译：一种用通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1，0≤z≤1）表示的III-V族化合物半导体的制造方法， 1）通过金属有机气相外延法提供。 III-V族化合物半导体具有由p型掺杂剂非掺杂层构成的半导体层和包含p型掺杂剂掺杂层的半导体层。在该方法中，用于生长由p型掺杂剂非掺杂层组成的半导体层的反应器和用于掺杂p型掺杂剂的反应器是相互不同的。

9. 发明授权

US5980632A Member for use in production device for semiconductors 失效
标题翻译：用于半导体生产设备的会员
公开(公告)号：US5980632A
公开(公告)日：1999-11-09
申请号：US219115
申请日：1998-12-23
申请人： Yasushi Iyechika , Toshihisa Katamime , Yoshinobu Ono , Tomoyuki Takada
发明人： Yasushi Iyechika , Toshihisa Katamime , Yoshinobu Ono , Tomoyuki Takada
IPC分类号： H01L33/00 , C30B25/18
CPC分类号： H01L33/007
摘要： A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.
摘要翻译：一种制备由通式In x Ga y Al z N表示的III-V族化合物半导体的方法（假定x + y + z =1,0,0≤x≤1,0,0≤y≤1,0 使用用于形成半导体的支撑构件，其中所述构件构成通过将石墨基底材料转化为SiC而获得的SiC。在另一个实施方案中，所述构件包括石墨-SiC复合材料，其中至少石墨基底的表面层部分转化为SiC。本发明的成员具有优异的化学和机械稳定性，从而使其在制备化合物半导体的高生产率生产装置中是有用的。

10. 发明申请

US20130328025A1 ORGANIC EL DEVICE 审中-公开
标题翻译：有机EL设备
公开(公告)号：US20130328025A1
公开(公告)日：2013-12-12
申请号：US13877767
申请日：2011-10-04
申请人： Yoshinobu Ono
发明人： Yoshinobu Ono
IPC分类号： H01L51/52
CPC分类号： H01L51/5253 , F21Y2105/00 , F21Y2115/15 , H01L2251/303
摘要： An organic EL device including a first film, a second film disposed facing the first film, and an organic EL element interposed between the first film and the second film. The second film has a gas barrier layer containing silicon atoms, oxygen atoms and carbon atoms. The distribution curve of silicon, the distribution curve of oxygen and the distribution curve of carbon of the gas barrier layer meet the following conditions: (i) in 90% or more of the region of the gas barrier layer in the thickness direction, the ratio of the number of the silicon atoms being the second largest value, (ii) the distribution curve of carbon having at least one extremum, and (iii) the difference between the maximum value and the minimum value of the ratio of the number of the carbon atoms in the distribution curve of carbon being 5 atom % or more.
摘要翻译：一种有机EL器件，包括第一膜，面对第一膜的第二膜和介于第一膜和第二膜之间的有机EL元件。第二膜具有含有硅原子，氧原子和碳原子的阻气层。硅的分布曲线，氧的分布曲线和阻气层的碳分布曲线符合以下条件：（i）在阻气层的厚度方向的90％以上的区域中，比例的硅原子数为第二大值，（ii）具有至少一个极值的碳的分布曲线，以及（iii）最大值与最小值之间的差值，碳分布曲线中的原子为5原子％以上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式