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41. 发明授权

US07633112B2 Metal-insulator-metal capacitor and method of manufacturing the same 有权
标题翻译：金属绝缘体金属电容器及其制造方法
公开(公告)号：US07633112B2
公开(公告)日：2009-12-15
申请号：US11508890
申请日：2006-08-24
申请人： Seok-jun Won , Jung-min Park
发明人： Seok-jun Won , Jung-min Park
IPC分类号： H01L29/76
CPC分类号： H01L28/40 , H01L23/5223 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal capacitor includes a first electrode in a first wiring level, a second electrode above the first wiring level and extending into a first portion of the first electrode that surrounds the second electrode, and a dielectric film separating the first electrode from the second electrode.
摘要翻译：金属 - 绝缘体 - 金属电容器包括第一布线层的第一电极和位于第一布线层之上的第二电极，并延伸到围绕第二电极的第一电极的第一部分;以及电介质膜，第二电极。

42. 发明授权

US07623338B2 Multiple metal-insulator-metal capacitors and method of fabricating the same 有权
标题翻译：多种金属 - 绝缘体 - 金属电容器及其制造方法
公开(公告)号：US07623338B2
公开(公告)日：2009-11-24
申请号：US11343328
申请日：2006-01-30
申请人： Seok-jun Won
发明人： Seok-jun Won
IPC分类号： H01G4/228
CPC分类号： H01L23/5223 , H01G4/385 , H01L27/0805 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： In a device including multiple metal-insulator-metal (MIM) capacitors and a method of fabricating the same, the multiple MIM capacitors comprise a lower interconnect in a substrate; a first dielectric layer on the lower interconnect; a first intermediate electrode pattern on the first dielectric layer overlapping with the lower interconnect; a second intermediate electrode pattern on the first dielectric layer and spaced apart from the first intermediate electrode pattern in a same plane of the device as the first intermediate electrode pattern; a second dielectric pattern on the second intermediate electrode pattern; and an upper electrode pattern on the second dielectric pattern.
摘要翻译：在包括多个金属 - 绝缘体 - 金属（MIM）电容器的器件及其制造方法中，多个MIM电容器在衬底中包括下部互连; 下互连上的第一介电层; 所述第一中间电极图案在所述第一介电层上与所述下互连重叠; 在所述第一介电层上的第二中间电极图案，并且与所述第一中间电极图案在与所述第一中间电极图案相同的平面中与所述第一中间电极图案间隔开; 第二中间电极图案上的第二电介质图案; 以及在第二电介质图案上的上电极图案。

43. 发明授权

US07508649B2 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
标题翻译：微电子器件的多层电介质膜及其制造方法
公开(公告)号：US07508649B2
公开(公告)日：2009-03-24
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/06 , H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要翻译：提供了能够提高微电子器件的性能特性的多层电介质膜及其制造方法。所述多层电介质膜包括由单一成分氧化物构成的单一成分氧化物层，以及复合成分氧化物层，所述复合成分由包含沿所述单一成分氧化物层的任一侧形成的两种以上不同成分的复合成分氧化物构成，。

44. 发明申请

US20080081409A1 Method of Manufacturing Memory Device 审中-公开
标题翻译：制造存储器件的方法
公开(公告)号：US20080081409A1
公开(公告)日：2008-04-03
申请号：US11858674
申请日：2007-09-20
申请人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
发明人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852
摘要： A method of manufacturing a memory device that improves electrical characteristics of an MIM capacitor using a zirconium oxide film (ZrO2) as a dielectric film includes: forming a lower metal electrode on a semiconductor substrate; forming a two or more-layered dielectric film including zirconium oxide films on the lower metal electrode; forming an upper metal electrode on the dielectric film; forming an MIM capacitor by patterning the upper metal electrode, the dielectric film, and the lower metal electrode; forming an interlayer insulating film covering the MIM capacitor; forming contacts in the insulating film; and performing heat treatment at a temperature range of 425 to 500° C.
摘要翻译：制造使用氧化锆膜（ZrO 2/2）作为电介质膜的MIM电容器的电气特性的存储器件的制造方法包括：在半导体衬底上形成下部金属电极; 在下金属电极上形成包含氧化锆膜的两层或多层电介质膜; 在所述电介质膜上形成上金属电极; 通过图案化上金属电极，电介质膜和下金属电极形成MIM电容器; 形成覆盖所述MIM电容器的层间绝缘膜; 在绝缘膜中形成接触; 并在425〜500℃的温度范围进行热处理。

45. 发明申请

US20080075881A1 Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition 审中-公开
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US20080075881A1
公开(公告)日：2008-03-27
申请号：US11828897
申请日：2007-07-26
申请人： Seok-jun Won , Ju-youn Kim , Jung-min Park
发明人： Seok-jun Won , Ju-youn Kim , Jung-min Park
IPC分类号： C23C16/513 , C23C16/56
CPC分类号： C23C16/4405 , C23C16/40 , C23C16/515
摘要： A method of forming a metallic oxide film using atomic layer deposition includes loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source gas onto the substrate, purging the remaining metallic source gas that does not react, with the substrate, and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.
摘要翻译：使用原子层沉积法形成金属氧化物膜的方法包括将基板装载到反应器中，将金属源气体供应到反应器中并将金属源气体吸收到基板上，将剩余的不起反应的金属源气体与并且在反应器中直接生成含有N基团的氧化物反应物气体的等离子体。

46. 发明申请

US20080026596A1 Method of forming metallic oxide films using atomic layer deposition 有权
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US20080026596A1
公开(公告)日：2008-01-31
申请号：US11812882
申请日：2007-06-22
申请人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
发明人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
IPC分类号： H01L21/02
CPC分类号： H01L21/3162 , C23C16/45531 , C23C16/4554 , C23C16/515 , C23C16/52 , H01L21/02178 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
摘要翻译：示例性实施例涉及在控制反应堆反射的功率的同时使用原子层沉积形成金属氧化物膜的方法。该方法可以包括将金属源气体，例如第一和第二金属源气体和/或包含氧气的反应物气体单独地供入反应器。金属源气体之一可以包括氨基或烷氧基，而另一种金属源气体既不包括氨基也不包括烷氧基。可以在反应器中从反应气体中产生等离子体。

47. 发明申请

US20060081905A1 Dielectric multilayer of microelectronic device and method of fabricating the same 审中-公开
标题翻译：微电子器件的介质多层及其制造方法
公开(公告)号：US20060081905A1
公开(公告)日：2006-04-20
申请号：US11233335
申请日：2005-09-22
申请人： Seok-jun Won , Dae-jin Kwon , Jong-ho Lee
发明人： Seok-jun Won , Dae-jin Kwon , Jong-ho Lee
IPC分类号： H01L29/94
CPC分类号： H01L21/022 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/40114 , H01L29/517 , H01L29/78
摘要： A dielectric multilayer suitable for improving a performance of a microelectronic device and a method of fabricating the dielectric multilayer are provided. The dielectric multilayer of the microelectronic device comprises a composite layer which is formed of oxides of two or more different elements and in which a laminar structure is not formed, and a single layer which is formed on at least one surface of the composite layer and is formed of an oxide of a single element.
摘要翻译：提供一种适用于改善微电子器件的性能的电介质多层及其制造方法。微电子器件的电介质多层包括由两个或更多个不同元素的氧化物形成并且其中没有形成层状结构的复合层和形成在复合层的至少一个表面上的单层，并且是由单一元素的氧化物形成。

48. 发明授权

US6133148A Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method 有权
标题翻译：使用灯加热方法在单晶片型设备中淀积半导体器件的膜的方法
公开(公告)号：US6133148A
公开(公告)日：2000-10-17
申请号：US185093
申请日：1998-11-03
申请人： Seok-jun Won , Kyoung-hoon Kim , Young-wook Park , Kab-jin Nam , Duk-soo Yoon , Sun-woo Kwak
发明人： Seok-jun Won , Kyoung-hoon Kim , Young-wook Park , Kab-jin Nam , Duk-soo Yoon , Sun-woo Kwak
IPC分类号： H01L21/26 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/285 , H01L21/314 , H01L21/44 , H01L21/31
CPC分类号： C23C16/45561 , C23C16/45557 , C23C16/481 , H01L21/28556 , H01L21/314 , Y10S438/907
摘要： A method of depositing a thin film for a semiconductor device using a lamp heating type apparatus. In the method, a wafer is loaded into a processing chamber of the apparatus, and the pressure of the chamber and the temperature of a susceptor installed in the chamber are increased to a level higher than a deposition pressure and a deposition temperature, respectively. Then, the pressure of the chamber and the temperature of the susceptor are decreased to the deposition pressure and the deposition temperature, respectively, and a film is deposited on the wafer. The vacuum of the chamber is then released and the gas remaining in the chamber and a source gas injection tube is purged.
摘要翻译：一种使用灯加热型设备沉积半导体器件用薄膜的方法。在该方法中，将晶片装载到装置的处理室中，并且将室的压力和安装在室中的基座的温度分别提高到高于沉积压力和沉积温度的水平。然后，室的压力和基座的温度分别降低到沉积压力和沉积温度，并且膜沉积在晶片上。然后释放室的真空，并且清除残留在室中的气体和源气体注入管。

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