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41. 发明申请

US20060186417A1 Light emitting diode and method making the same 有权
公开(公告)号：US20060186417A1
公开(公告)日：2006-08-24
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

42. 发明申请

US20050253129A1 Light emitting diode with enhanced luminance and method for manufacturing the same 审中-公开
标题翻译：具有增强亮度的发光二极管及其制造方法
公开(公告)号：US20050253129A1
公开(公告)日：2005-11-17
申请号：US10949456
申请日：2004-09-23
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
IPC分类号： H01L29/06 , H01L33/00 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0079
摘要： A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.
摘要翻译：提供具有增强亮度的发光二极管和制造发光二极管的方法。发光二极管包括基板，包括选自金属合金，金属氧化物，金属氮化物，有机材料，无机材料及其组合的材料的钝化层，反射层，第一半导体层，多层量子阱结构和第二半导体层。该基板具有优异的电/热导率。

43. 发明授权

US06894323B2 Group III nitride semiconductor device and its method of manufacture 有权
标题翻译： III族氮化物半导体器件及其制造方法
公开(公告)号：US06894323B2
公开(公告)日：2005-05-17
申请号：US10791710
申请日：2004-03-04
申请人： Tzong-Liang Tsai , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Chih-Sung Chang
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/20 , H01L31/0304 , H01L31/18 , H01L33/00 , H01L33/12 , H01L33/16 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/007 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L29/2003 , H01L31/03046 , H01L31/1852 , H01L33/12 , H01L33/16 , Y02E10/544 , Y02P70/521
摘要： Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.
摘要翻译：公开了一种III族氮化物半导体器件，其包括具有非晶氮化硅层，铝中间层，无定形氮化铝预浸层和含有铝的多晶III族氮化物层的应力吸收层。应力吸收层位于硅衬底和III族氮化物半导体之间，用于减轻由III族氮化物物质和硅衬底之间的不同晶格常数引起的应力，从而防止由于应力引起的III族氮化物半导体的开裂。进一步公开了制造III族氮化物半导体器件的方法。

44. 发明申请

US20050093002A1 Light emitting diode device and manufacturing method 失效
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20050093002A1
公开(公告)日：2005-05-05
申请号：US10695807
申请日：2003-10-30
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
IPC分类号： H01L27/15 , H01L33/38 , H01L33/42
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译：发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。

45. 发明授权

US06781160B1 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06781160B1
公开(公告)日：2004-08-24
申请号：US10603378
申请日：2003-06-24
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L2922
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
摘要翻译：公开了一种半导体发光器件及其制造方法。该半导体包括位于具有划痕表面的半导体层上的光散射偏转层。当光从光散射偏转层进入半导体层时，光由于折射率的差异而偏转，并且当光进入半导体层的锯齿状表面时，光散射，从而使得半导体发光器件能够发射更多的光以增加半导体发光器件的发光效率。

46. 发明授权

US06774410B2 Epitaxial growth of nitride semiconductor device 有权
标题翻译：氮化物半导体器件的外延生长
公开(公告)号：US06774410B2
公开(公告)日：2004-08-10
申请号：US10292712
申请日：2002-11-13
申请人： Chih-Sung Chang , Tzong-Liang Tsai
发明人： Chih-Sung Chang , Tzong-Liang Tsai
IPC分类号： H01L2906
CPC分类号： H01L33/12 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/16
摘要： The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
摘要翻译：本发明提供了具有降低位错密度的半导体器件。半导体器件包括在衬底和AlGaInN化合物半导体之间的多个核。由Al衬底和AlGaInN化合物半导体之间的晶格差异引起的位错密度显着降低，AlGaInN化合物半导体的生长提高。

47. 发明授权

US07999273B2 Light emitting device having pillar structure with roughness surface and the forming method thereof 有权
标题翻译：具有粗糙表面的柱结构的发光装置及其形成方法
公开(公告)号：US07999273B2
公开(公告)日：2011-08-16
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang Tsai , Lin-Chieh Kao
发明人： Tzong-Liang Tsai , Lin-Chieh Kao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

48. 发明授权

US07973326B2 Semiconductor structure combination for epitaxy of semiconductor optoelectronic device 有权
标题翻译：半导体光电子器件外延半导体结构组合
公开(公告)号：US07973326B2
公开(公告)日：2011-07-05
申请号：US11987640
申请日：2007-12-03
申请人： Chih-Ching Cheng , Tzong-Liang Tsai
发明人： Chih-Ching Cheng , Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/0262
摘要： The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide a first site for the growth of a plurality of first epitaxial crystals of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide a third site for the growth of a third epitaxial crystal of the semiconductor material toward the first preferred orientation.
摘要翻译：本发明公开了一种用于半导体光电子器件外延的半导体结构组合及其制造。根据本发明的半导体结构组合包括基板和半导体材料。基板具有形成在上表面上的上表面和凹部。凹槽的侧壁提供了用于朝向第一优选取向生长半导体材料的多个第一外延晶体的第一位置。凹部的底部提供第二位置，用于朝向第一优选取向生长半导体材料的第二外延晶体。与凹部相邻的平坦区域提供第三位置，用于朝向第一优选取向生长半导体材料的第三外延晶体。

49. 发明授权

US07923744B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07923744B2
公开(公告)日：2011-04-12
申请号：US12755019
申请日：2010-04-06
申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

50. 发明授权

US07768022B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07768022B2
公开(公告)日：2010-08-03
申请号：US11109345
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

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