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    • 47. 发明授权
    • Thin film solar cell and fabrication method therefor
    • 薄膜太阳能电池及其制造方法
    • US06521826B2
    • 2003-02-18
    • US09723277
    • 2000-11-29
    • Kenji Wada
    • Kenji Wada
    • H01L31036
    • H01L31/182H01L31/075H01L31/1824Y02E10/545Y02E10/546Y02E10/548Y02P70/521
    • An n-type polysilicon thin film, an intrinsic polysilicon thin film and a p-type polysilicon thin film are formed on a transparent conductive film of a glass substrate by the plasma enhanced CVD method at a plasma excitation frequency of 81.36 MHz so as to obtain a photoelectric conversion layer. The n-type polysilicon thin film and the intrinsic polysilicon thin film are then formed so that the crystallization ratio of the n-doped layer located on the incident light side becomes equal to or greater than the crystallization ratio of the intrinsic layer. Thus, a thin film solar cell having an appropriate structure of a junction interface between the n-layer and the intrinsic layer is obtained.
    • 在81.36MHz的等离子体激发频率下,通过等离子体增强CVD法在玻璃基板的透明导电膜上形成n型多晶硅薄膜,本征多晶硅薄膜和p型多晶硅薄膜,以获得 光电转换层。 然后形成n型多晶硅薄膜和本征多晶硅薄膜,使得位于入射光侧的n掺杂层的结晶比变得等于或大于本征层的结晶比。 因此,获得具有n层和本征层之间的结界面的适当结构的薄膜太阳能电池。