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41. 发明授权

US07101780B2 Method for manufacturing Group-III nitride compound semiconductor device 失效
标题翻译： III族氮化物化合物半导体器件的制造方法
公开(公告)号：US07101780B2
公开(公告)日：2006-09-05
申请号：US10479485
申请日：2002-06-03
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L33/42 , H01L21/28575 , H01L33/32
摘要： After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively low temperature in an atmosphere containing oxygen. In the second heating step, heat treatment is performed at a relatively high temperature in an atmosphere not containing oxygen.
摘要翻译：在将p座电极形成层层压到透光电极形成层上之后，进行第一加热步骤和第二加热步骤以使两层合金化。在第一加热步骤中，在含氧的气氛中，在较低的温度下进行热处理。在第二加热工序中，在不含氧的气氛中，在比较高的温度下进行热处理。

42. 发明申请

US20060163585A1 Light-emitting semicoductor device and a method of manufacturing it 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20060163585A1
公开(公告)日：2006-07-27
申请号：US10564416
申请日：2004-08-20
申请人： Masanobu Ando , Masahito Nakai , Toshiya Uemura , Masaaki Nakayama
发明人： Masanobu Ando , Masahito Nakai , Toshiya Uemura , Masaaki Nakayama
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/183 , H01S5/3086 , H01S5/3409 , H01S5/34333 , H01S2304/04
摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.
摘要翻译：在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面。通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

43. 发明授权

US06960485B2 Light-emitting device using a group III nitride compound semiconductor and a method of manufacture 失效
标题翻译：使用III族氮化物化合物半导体的发光装置及其制造方法
公开(公告)号：US06960485B2
公开(公告)日：2005-11-01
申请号：US10375135
申请日：2003-02-28
申请人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
发明人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
IPC分类号： H01L33/00 , H01L33/10 , H01L33/32 , H01L33/46 , H01L33/60 , H01L21/00
CPC分类号： H01L33/46 , H01L33/0095 , H01L33/32
摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.
摘要翻译：形成用于将半导体晶片分离成各个发光器件的分离槽的工艺，用于使基板变薄的工艺，将晶片粘附到粘合片上以暴露晶片背面或背面的基板表面的处理，划线在基板上形成分割线以将晶片分割成发光器件的工艺，以及形成包括透光层，反射层和耐腐蚀层的反射镜结构的工艺，其顺序地使用溅射或沉积工艺。由于透光层层压在粘合片上，所以通常从粘合材料挥发的气体被密封，并且不与作为反射层沉积的金属化学结合。结果，可以保持反射层的反射率。

44. 发明授权

US06956245B2 Group III nitride compound semiconductor light-emitting element 失效
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US06956245B2
公开(公告)日：2005-10-18
申请号：US10448025
申请日：2003-05-30
申请人： Masanobu Senda , Toshiya Uemura , Hideki Omoya , Masaki Hashimura
发明人： Masanobu Senda , Toshiya Uemura , Hideki Omoya , Masaki Hashimura
IPC分类号： H01L33/10 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L27/15 , H01L33/00
CPC分类号： H01L33/20 , H01L33/32 , H01L33/46 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265
摘要： A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).
摘要翻译： III族氮化物化合物半导体发光元件在与发光层观察的元件的主发光面相反的一侧具有反射面。反射面倾斜于半导体层的生长面。从发光层发射的光被反射面反射，使得反射光从发光元件的侧面向外侧射出而不通过半导体层（特别是发光层）。

45. 发明授权

US06936859B1 Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US06936859B1
公开(公告)日：2005-08-30
申请号：US09559273
申请日：2000-04-27
申请人： Toshiya Uemura , Shigemi Horiuchi
发明人： Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L33/32 , H01L33/40 , H01L27/15 , H01L29/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： A flip chip type of light-emitting semiconductor device using group III nitride compound comprising a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt) and palladium (Pd), and an alloy including at least one of these metals, is adjacent to a p-type semiconductor layer, and reflect light toward a sapphire substrate. Accordingly, a positive electrode having a high reflectivity and a low contact resistance can be obtained. A first thin-film metal layer, which is made of cobalt (Co) and nickel (Ni), or any combinations of including at least one of these metals, formed between the p-type semiconductor layer and the thick electrode, can improve an adhesion between a contact layer and the thick positive electrode. A thickness of the first thin-film metal electrode should be preferably in the range of 2 Å to 200 Å, more preferably 5 Å to 50 Å. A second thin-film metal layer made of gold (Au) can further improve the adhesion.
摘要翻译：使用包含厚正电极的III族氮化物化合物的倒装芯片型发光半导体器件。由银（Ag），铑（Rh），钌（Ru），铂（Pt）和钯（Pd）中的至少一种以及包含这些金属中的至少一种的合金制成的正极是相邻的到p型半导体层，并且朝向蓝宝石衬底反射光。因此，可以获得具有高反射率和低接触电阻的正极。由p型半导体层和厚电极之间形成的由钴（Co）和镍（Ni）构成的第一薄膜金属层或包含这些金属中的至少一种的任意组合可以改善接触层与厚正电极之间的粘附。第一薄膜金属电极的厚度应优选在2埃至200埃的范围内，更优选在5埃至50埃的范围内。由金（Au）制成的第二薄膜金属层可以进一步提高粘附性。

46. 发明授权

US06867058B2 Transparent electrode film and group III nitride semiconductor device 失效
标题翻译：透明电极膜和III族氮化物半导体器件
公开(公告)号：US06867058B2
公开(公告)日：2005-03-15
申请号：US10325541
申请日：2002-12-23
申请人： Toshiya Uemura , Shigemi Horiuchi
发明人： Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/28 , H01L33/06 , H01L33/32 , H01L33/42 , H10L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A transparent electrode film containing gold for covering the uppermost layer of a group III nitride semiconductor device has a first layer formed on the uppermost layer and not thicker than 15 Å, and a second layer formed on the first layer and containing gold. The first layer contains a first metal having an ionization potential lower than that of gold, and the second layer further contains a second metal having an ionization potential lower than that of gold.
摘要翻译：包含用于覆盖III族氮化物半导体器件的最上层的金的透明电极膜具有形成在最上层且不厚于第一层的第一层，以及形成在第一层上并含有金的第二层。第一层含有电离电位低于金的电离电位的第一金属，第二层还含有电离电位低于金的电离电位的第二金属。

47. 发明授权

US06806571B2 III nitride compound semiconductor element an electrode forming method 有权
标题翻译： III族氮化物化合物半导体元件电极形成方法
公开(公告)号：US06806571B2
公开(公告)日：2004-10-19
申请号：US10239895
申请日：2003-02-19
申请人： Naoki Shibata , Toshiya Uemura , Makoto Asai , Yasuo Koide , Masanori Murakami
发明人： Naoki Shibata , Toshiya Uemura , Makoto Asai , Yasuo Koide , Masanori Murakami
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L21/242 , H01L21/28575 , H01L33/0095 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S5/32341
摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.
摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度n + 3层; Si掺杂n型Al0.07Ga0.93N n包层4; Si掺杂的n型GaN n引导层5; 具有多量子阱（MQW）结构的有源层6，并且包括Ga 0.9 In 0.1 N阱层61（厚度：约2nm）和Ga 0.97 In 0.03 N势垒层62（厚度：约4nm），层61和62交替层压; Mg掺杂的GaN p引导层7; Mg掺杂的Al0.07Ga0.93N p型包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。该电极的接触电阻通过热处理而降低。

48. 发明授权

US06794690B2 Group III nitride compound semiconductor light-emitting element 失效
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US06794690B2
公开(公告)日：2004-09-21
申请号：US10227448
申请日：2002-08-26
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L310328
CPC分类号： H01L33/40 , H01L33/32
摘要： A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag and formed on a p-type semiconductor layer; a protective film with which the first metal layer except a part region is covered; and a second metal layer not containing Ag and formed on the protective film.
摘要翻译：在一个表面侧设置有p侧电极和n侧电极的III族氮化物化合物半导体发光元件（倒装芯片型发光元件），其中p侧电极包括：第一金属层含有Ag并形成在p型半导体层上; 除了部分区域以外的第一金属层被覆盖的保护膜; 以及形成在保护膜上的不含有Ag的第二金属层。

49. 发明授权

US06774025B2 Method for producing group III nitride compound semiconductor light-emitting element 有权
标题翻译：制备III族氮化物化合物半导体发光元件的方法
公开(公告)号：US06774025B2
公开(公告)日：2004-08-10
申请号：US10162256
申请日：2002-06-05
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L2100
CPC分类号： H01L33/42 , H01L21/28575 , H01L33/0095 , H01L33/32
摘要： After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high temperature.
摘要翻译：在p座电极层叠在透光电极上之后，将两个电极在相对低的温度下加热，从而从两个电极之间除去气体（脱气）。然后，两个电极在高温下相互合金化。

50. 发明授权

US6008539A Electrodes for p-type group III nitride compound semiconductors 失效
标题翻译： p型III族氮化物半导体电极
公开(公告)号：US6008539A
公开(公告)日：1999-12-28
申请号：US663696
申请日：1996-06-14
申请人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
发明人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L33/32 , H01L33/38 , H01L33/40 , H01L23/48
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32
摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
摘要翻译：具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。热处理改变或反转元素Ni和Au的分布。也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

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