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41. 发明授权

US5908565A Line plasma vapor phase deposition apparatus and method 失效
标题翻译：线等离子体气相沉积装置及方法
公开(公告)号：US5908565A
公开(公告)日：1999-06-01
申请号：US383495
申请日：1995-02-03
申请人： Tatsuo Morita , Robert J. Markunas , Gill Fountian , Robert Hendry , Masataka Itoh
发明人： Tatsuo Morita , Robert J. Markunas , Gill Fountian , Robert Hendry , Masataka Itoh
IPC分类号： H05H1/46 , C23C16/44 , C23C16/452 , C23C16/455 , C23C16/50 , C23C16/54 , G02F1/136 , G02F1/1368 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/321 , B23K10/00
CPC分类号： H01J37/32357 , C23C16/452 , C23C16/54 , H01L21/321
摘要： A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low temperature operation. Active species exit the plasma chamber through a long narrow ("line") outlet aperture (36) in the plasma chamber to a reaction zone (W) whereat the active species react with a reaction gas on the polycrystalline silicon surface (e.g., to form a deposited thin film). The polycrystalline silicon surface is heated to a low temperature below 6000.degree. C. Hydrogen is removed from the reactive surface in the low temperature line plasma source by a chemical displacement reaction facilitated by choice of dominant active species (singlet delta state of molecular oxygen). Reaction by-products including hydrogen are removed by an exhaust system (100) comprising long narrow exhaust inlet apertures (114L,114R) extending adjacent and parallel to the outlet aperture of the plasma chamber. An ionizing electric field is coupled to the plasma across a smallest dimension of the plasma, resulting in uniform production of active species and accordingly uniform quality of the thin film. The polycrystalline silicon surface to be treated is translated with respect to the plasma line source in a direction perpendicular to the outlet aperture of the plasma line source for integrating thin film quality in the direction of translation (22).
摘要翻译：线等离子体源（20）包括等离子体室（30），其被配置为使得等离子体（32）相对于待处理的多晶硅表面（20S）远离和在边缘定位，从而防止对表面的损坏，促进处理大基材，并允许低温操作。活性物质通过等离子体室中的长狭窄（“线”）出口孔（36）离开等离子体室至反应区（W），其中活性物质与多晶硅表面上的反应气体反应（例如，形成沉积的薄膜）。多晶硅表面被加热到低于6000℃的低温。通过选择主要活性物质（分子氧的单态三态）促进的化学位移反应，从低温线等离子体源中的反应性表面除去氢。包括氢的反应副产物通过排气系统（100）除去，排气系统（100）包括相邻并平行于等离子体室的出口孔延伸的长的狭窄的排气入口孔（114L，114R）。电离电场通过等离子体的最小尺寸耦合到等离子体，导致活性物质的均匀产生和相应的薄膜质量均匀。要处理的多晶硅表面相对于等离子体线源在垂直于等离子体线源的出口孔的方向上平移，用于在平移方向上整合薄膜质量（22）。

42. 发明授权

US5550070A Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same 失效
标题翻译：具有降低结晶用催化剂元素浓度的结晶半导体膜的制造方法和具有该结晶半导体膜的半导体装置
公开(公告)号：US5550070A
公开(公告)日：1996-08-27
申请号：US357653
申请日：1994-12-16
申请人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tatsuo Morita
发明人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tatsuo Morita
IPC分类号： H01L21/20 , H01L21/336 , H01L21/265
CPC分类号： H01L29/66757 , H01L21/2022 , Y10S148/016
摘要： A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
摘要翻译：一种制造半导体膜的方法，包括以下步骤：（a）在具有绝缘性的表面的基板上形成非晶半导体膜; （b）引入用于加速非晶半导体膜结晶化成非晶半导体膜的至少一部分的材料; （c）通过加热使非晶半导体膜结晶，从非晶半导体膜得到结晶半导体膜; 和（d）氧化结晶半导体膜的表面以形成含有用于在结晶半导体膜的表面上加速结晶的材料的一部分的半导体氧化膜。

43. 发明授权

US5403756A Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor 失效
标题翻译：制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
公开(公告)号：US5403756A
公开(公告)日：1995-04-04
申请号：US158592
申请日：1993-11-24
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
IPC分类号： H01L21/30 , H01L21/3215 , H01L21/336 , H01L21/266
CPC分类号： H01L29/66757 , H01L21/3003 , H01L21/32155
摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
摘要翻译：公开了一种多晶半导体膜的制造方法。该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。

44. 发明授权

US4941442A Apparatus for controlling fuel delivery to engine 失效
标题翻译：用于控制向发动机输送燃料的装置
公开(公告)号：US4941442A
公开(公告)日：1990-07-17
申请号：US195300
申请日：1988-05-18
申请人： Yasutoshi Nanyoshi , Tatsuo Morita
发明人： Yasutoshi Nanyoshi , Tatsuo Morita
IPC分类号： F02D41/22 , F02D17/02 , F02D31/00 , F02D41/00 , F02D41/36
CPC分类号： F02D31/009 , F02D41/0087
摘要： An apparatus for controlling a multi-cylinder type internal combustion engine including first and second cylinder groups each includinhg at least one cylinder. The apparatus comprises sensors for generating electrical signals indicative of engine operating conditions including engine speed, and a control circuit coupled to the sensors for determining an appropriate value repetitively at uniform intervals. This calculation is made according to the engine operating conditions. A fuel supply device is coupled to the control circuit for supplying fuel to the first and second cylinder groups in an amount corresponding to the calculated value. The control circuit operates the fuel supply device to alternatively terminate the fuel delivery to the first cylinder group and the fuel delivery to the second cylinder group under an overspeed condition.
摘要翻译：一种用于控制包括第一和第二气缸组的多气缸型内燃机的装置，每个气缸组包括至少一个气缸。该装置包括用于产生指示包括发动机转速的发动机操作条件的电信号的传感器，以及耦合到传感器的控制电路，用于以均匀的间隔重复地确定适当的值。根据发动机的运行条件进行计算。燃料供给装置联接到控制电路，用于以对应于计算值的量向第一和第二气缸组供应燃料。控制电路操作燃料供应装置，以交替地终止在超速状态下向第一气缸组输送燃料并将燃料输送到第二气缸组。

45. 发明授权

US4819603A System and method for controlling ignition timing for an internal combustion engine 失效
标题翻译：用于控制内燃机点火正时的系统和方法
公开(公告)号：US4819603A
公开(公告)日：1989-04-11
申请号：US921484
申请日：1986-10-22
申请人： Tatsuo Morita , Terufumi Hidaka , Yuichi Kashimura
发明人： Tatsuo Morita , Terufumi Hidaka , Yuichi Kashimura
IPC分类号： F02D45/00 , F02P5/152 , F02P5/153 , F02P5/15
CPC分类号： F02P5/1522 , Y02T10/46
摘要： A system and method for controlling an ignition timing for an internal combustion engine. In the ignition timing control system and method, with a retardation angle correction amount stored as a learning value according to an engine operating region, a newly learned learning value is used as the retardation angle correction amount so that an optimum retardation angle correction amount can be provided regardless of an individual difference in engine performance and of an operating environment. Consequently, an effective suppression of occurrence of engine knocking can be achieved and engine performance and fuel economy can be improved. In addition, since the updating of the learning value is inhibited only when an engine revolutional speed is increased, an opportunity of updating the learning value is increased so that the learning value can always be set at optimum.
摘要翻译：一种用于控制内燃机的点火正时的系统和方法。在点火正时控制系统和方法中，利用根据发动机运转区域作为学习值存储的相位差校正量，将新学习的学习值用作相位角校正量，使得最佳相位差校正量可以无论发动机性能和操作环境的差异如何。因此，可以有效地抑制发动机爆震的发生，并且可以提高发动机性能和燃料经济性。此外，由于仅当发动机转速增加时才抑制学习值的更新，所以增加学习值的更新的机会，使得学习值总能被设定为最佳。

46. 发明授权

US4679536A Engine combustion condition detecting system and method 失效
标题翻译：发动机燃烧状态检测系统及方法
公开(公告)号：US4679536A
公开(公告)日：1987-07-14
申请号：US781665
申请日：1985-09-30
申请人： Tatsuo Morita
发明人： Tatsuo Morita
IPC分类号： F02B77/08 , F02P5/145 , F02P5/152 , F02P5/153 , G01L23/30 , F02P5/04
CPC分类号： F02P5/1455 , Y02T10/46
摘要： Pressure within an engine combustion chamber is sensed. The timing at which the sensed pressure peaks is detected, and the interval between the moment of spark generation and the detected timing of the pressure peak is measured. The presently detected timing of the pressure peak is selectively adopted or ignored in accordance with the measured interval. When the presently detected timing of the pressure peak is ignored, the previously accepted timing value of the pressure peak is adopted in its place.
摘要翻译：检测发动机燃烧室内的压力。检测到检测到的压力峰值的时刻，并且测量火花产生的时刻与检测到的压力峰值的时刻之间的间隔。根据测量的间隔选择性地采用或忽略当前检测到的压力峰值的定时。当当前检测到的压力峰值的定时被忽略时，采用先前接受的压力峰值的定时值。

47. 发明授权

US4625690A System for controlling an engine and method therefor 失效
标题翻译：用于控制发动机的系统及其方法
公开(公告)号：US4625690A
公开(公告)日：1986-12-02
申请号：US761842
申请日：1985-08-02
申请人： Tatsuo Morita
发明人： Tatsuo Morita
IPC分类号： F02B1/04 , F02D37/02 , F02D41/14 , F02D43/00 , F02P5/04 , F02P5/145 , F02P5/15
CPC分类号： F02D35/023 , F02D11/105 , F02D37/02 , F02D41/1497 , F02D43/00 , F02P5/045 , F02P5/1455 , F02P5/1502 , F02P5/1504 , F02B1/04 , Y02T10/46
摘要： A system and method for controlling an engine, in which a value correlative to an engine output is detected, a target value of the engine output correlative value is calculated on the basis of an angular displacement of an accelerator pedal and engine speed, the detected value correlative to the engine output is compared with the target value, an opening angle of a throttle valve located within a throttle chamber of the engine for adjusting an intake air quantity supplied to the engine according to its opening angle is calculated on the basis of the comparison result, and the throttle valve is actuated to adjust the intake air quantity according to the calculated opening angle so that the detected value correlative to the engine output coincides with the target value.
摘要翻译：一种用于控制发动机的系统和方法，其中检测到与发动机输出相关的值，基于加速踏板的角位移和发动机转速来计算发动机输出相关值的目标值，检测值将与发动机输出相关的发动机输出与目标值进行比较，基于比较计算位于发动机的节气门内的节气门的开度角，用于根据其开度角调节供给发动机的进气量结果，并且节流阀被致动以根据计算的开启角度来调节进气量，使得与发动机输出相关的检测值与目标值一致。

48. 发明授权

US08604512B2 Bidirectional switch 有权
标题翻译：双向开关
公开(公告)号：US08604512B2
公开(公告)日：2013-12-10
申请号：US13463631
申请日：2012-05-03
申请人： Tatsuo Morita
发明人： Tatsuo Morita
IPC分类号： H01L29/66
CPC分类号： H01L29/42316 , H01L27/0605 , H01L27/0705 , H01L29/1066 , H01L29/2003 , H01L29/7786 , H01L2224/0603 , H01L2224/48247
摘要： A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first gate electrode and a second gate electrode, which are sequentially formed on the first ohmic electrode between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizer sets a potential of the substrate lower than higher one of a potential of the first ohmic electrode or a potential of the second ohmic electrode.
摘要翻译：双向开关包括半导体元件和衬底势垒稳定器。半导体元件包括在第一欧姆电极和第二欧姆电极之间的第一欧姆电极上依次形成的第一欧姆电极和第二欧姆电极以及第一栅电极和第二栅电极。衬底势垒稳定器使衬底的电位低于第一欧姆电极的电位或第二欧姆电极的电位的高电位。

49. 发明授权

US08497581B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08497581B2
公开(公告)日：2013-07-30
申请号：US13220054
申请日：2011-08-29
申请人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
发明人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/495 , H01L23/34
CPC分类号： H01L24/11 , H01L23/295 , H01L23/3192 , H01L23/36 , H01L23/3677 , H01L23/4824 , H01L24/16 , H01L24/81 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1146 , H01L2224/1191 , H01L2224/13021 , H01L2224/131 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/29076 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
摘要翻译：半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。连接端子分别连接到连接焊盘。散热端与安装基板紧密接触。

50. 发明申请

US20120001200A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120001200A1
公开(公告)日：2012-01-05
申请号：US13220054
申请日：2011-08-29
申请人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
发明人： Ayanori Ikoshi , Yasuhiro Uemoto , Manabu Yanagihara , Tatsuo Morita
IPC分类号： H01L29/161 , H01L23/48
CPC分类号： H01L24/11 , H01L23/295 , H01L23/3192 , H01L23/36 , H01L23/3677 , H01L23/4824 , H01L24/16 , H01L24/81 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1146 , H01L2224/1191 , H01L2224/13021 , H01L2224/131 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/29076 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
摘要翻译：半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。连接端子分别连接到连接焊盘。散热端与安装基板紧密接触。

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