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41. 发明申请

US20060134553A1 Positive type resist composition and resist pattern formation method using same 有权
公开(公告)号：US20060134553A1
公开(公告)日：2006-06-22
申请号：US11347423
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

42. 发明授权

US06749991B2 Negative-working photoresist composition 有权
公开(公告)号：US06749991B2
公开(公告)日：2004-06-15
申请号：US10196681
申请日：2002-07-18
申请人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
发明人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

43. 发明授权

US06444397B1 Negative-working photoresist composition 有权
公开(公告)号：US06444397B1
公开(公告)日：2002-09-03
申请号：US09865530
申请日：2001-05-29
申请人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
发明人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
IPC分类号： G03F7004
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

44. 发明授权

US6077644A Positive-working resist composition 失效
标题翻译：正面抗蚀剂组成
公开(公告)号：US6077644A
公开(公告)日：2000-06-20
申请号：US207202
申请日：1998-12-08
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C69/013 , G03F7/004 , G03F7/039
CPC分类号： C07C69/013 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.1]heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
摘要翻译：提出了用于制造精细电子器件的光刻图案化工艺中的新型化学增感正性光致抗蚀剂组合物，其能够赋予ArF准分子激光束具有高光敏性的具有良好正交交叉的图案化抗蚀剂层截面轮廓和高抗干蚀刻性，并且对基材表面具有良好的粘合性。虽然组合物包含（A）通过与酸相互作用而增加碱溶解度的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元，与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。

45. 发明授权

US6022666A Chemical-sensitization photoresist composition 有权
标题翻译：化学增感光刻胶组合物
公开(公告)号：US6022666A
公开(公告)日：2000-02-08
申请号：US236567
申请日：1999-01-26
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.
摘要翻译：公开了能够赋予高分辨率的高耐热图案化抗蚀剂层的新型高灵敏度正负工作化学增感光致抗蚀剂组合物，而不受驻波的影响，具有非常正交的横截面轮廓。该组合物通过用光化射线照射作为酸产生剂含有特定的氰基取代的肟磺酸酯化合物，例如α-（甲基磺酰氧基亚氨基）-4-甲氧基苄基氰化物。当成膜树脂成分具有使重均分子量与数均分子量的比例不超过3.5的分子量分布时，通过使用该特定酸产生剂获得的优点是显着的。

46. 发明授权

US5990338A Negative-working chemical-sensitization photoresist composition 有权
标题翻译：负性化学增感光刻胶组合物
公开(公告)号：US5990338A
公开(公告)日：1999-11-23
申请号：US179817
申请日：1998-10-28
申请人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
发明人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
IPC分类号： C07C307/02 , C07C309/65 , C07C309/66 , C07C309/73 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C07C255/00
CPC分类号： C07C309/66 , C07C309/65 , C07C309/73 , G03F7/0045
摘要： Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.
摘要翻译：公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂，从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。所提出的酸产生剂是由通式A [C（CN）= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物，其中每个R独立地为未取代或取代的一价烃基如烷基，A是二价或三价有机基团，或优选亚苯基，下标n为2，当A为二价基团时，或3，当A为三价基团或，优选2.由于通过暴露于光化射线，一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来，化学增感光致抗蚀剂组合物表现出高的光敏性。

47. 发明授权

US5902713A Chemical-sensitization photoresist composition 失效
公开(公告)号：US5902713A
公开(公告)日：1999-05-11
申请号：US762920
申请日：1996-12-10
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

48. 发明授权

US5892095A Cyano group-containing oxime sulfonate compounds 失效
标题翻译：含氰基的肟磺酸盐化合物
公开(公告)号：US5892095A
公开(公告)日：1999-04-06
申请号：US791814
申请日：1997-01-30
申请人： Hideo Hada , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C307/02 , C07C309/65 , C07C309/66 , C07C309/73 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C07C255/00 , G03F5/16 , G03F7/022
CPC分类号： C07C309/66 , C07C309/65 , C07C309/73 , G03F7/0045
摘要： Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA�C(CN).dbd.N--O--SO.sub.2 --R!.sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.
摘要翻译：公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂，从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。所提出的酸产生剂是由通式A [C（CN）= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物，其中每个R独立地为未取代或取代的一价烃基如烷基，A是二价或三价有机基团，或优选亚苯基，下标n为2，当A为二价基团时，或3，当A为三价基团或，优选2.由于通过暴露于光化射线，一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来，化学增感光致抗蚀剂组合物表现出高的光敏性。

49. 发明授权

US07960089B2 Compound, method for producing same, positive resist composition and method for forming resist pattern 失效
标题翻译：化合物，其制造方法，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07960089B2
公开(公告)日：2011-06-14
申请号：US12067255
申请日：2006-09-13
申请人： Daiju Shiono , Takahiro Dazai , Taku Hirayama , Kohei Kasai , Hideo Hada
发明人： Daiju Shiono , Takahiro Dazai , Taku Hirayama , Kohei Kasai , Hideo Hada
IPC分类号： G03F7/004 , C07C39/12
CPC分类号： C07C69/712 , C07C59/70 , C07C59/72 , C07C2601/14 , C07C2603/74 , G03F7/0392
摘要： A compound of the present invention is a compound represented by a general formula (A-1) [wherein, R′ represents a hydrogen atom or an acid-dissociable, dissolution-inhibiting group, provided that at least one R′ group is an acid-dissociable, dissolution-inhibiting group, R11 to R17 each represent an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each represent an integer of 1 or greater, and k and q each represent an integer of 0 or greater, provided that g+j+k+q is not greater than 5; a represents an integer from 1 to 3; b represents an integer of 1 or greater, and l and m each represent an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represent an integer of 0 or greater, provided that c+n+o is not greater than 4; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
摘要翻译：本发明化合物是由通式（A-1）表示的化合物[其中，R'表示氢原子或酸解离的溶解抑制基团，条件是至少一个R'基团为酸可溶解抑制基团，R 11至R 17各自表示1-10个碳原子的烷基或芳族烃基，其可以包括结构内的杂原子; g和j分别表示1以上的整数，k和q各自表示0以上的整数，条件是g + j + k + q不大于5; a表示1〜3的整数， b表示1或更大的整数，并且l和m各自表示0或更大的整数，条件是b + 1 + m不大于4; c表示1或更大的整数，n和o各自表示0或更大的整数，条件是c + n + o不大于4; A表示由下述通式（Ia）表示的基团，由下述通式（Ib）表示的基团或脂族环基]表示。

50. 发明授权

US07897319B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07897319B2
公开(公告)日：2011-03-01
申请号：US11572630
申请日：2005-07-25
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03C1/00 , G03F1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要翻译：含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1）其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂（B1）与烷基磺酸根离子作为阴离子。

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