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41. 发明授权

US5852307A Semiconductor device with capacitor 失效
标题翻译：带电容器的半导体器件
公开(公告)号：US5852307A
公开(公告)日：1998-12-22
申请号：US681537
申请日：1996-07-23
申请人： Tomonori Aoyama , Keitaro Imai
发明人： Tomonori Aoyama , Keitaro Imai
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： H01L27/10852 , H01L28/55 , H01L28/60 , H01L2924/0002
摘要： A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom.%.
摘要翻译：一种半导体器件，包括形成在半导体衬底上的半导体衬底和电容器，其中电容器由包括靠近半导体衬底设置的第一电极的多层构成，远离半导体衬底设置的第二电极和由金属氧化物并且介于第一电极和第二电极之间，并且第一和第二电极中的至少一个包含氧，并且由选自以下的任何一个的7A和8族元素中的任一个组成：第五和第六周期的周期表，氧的含量在0.004至5原子％的范围内。

42. 发明授权

US5670808A Metal oxide capacitor with a WN.sub.X electrode 失效
标题翻译：具有WNX电极的金属氧化物电容器
公开(公告)号：US5670808A
公开(公告)日：1997-09-23
申请号：US591153
申请日：1996-01-25
申请人： Kazuya Nishihori , Yoshiaki Kitaura , Yoshikazu Tanabe , Tomonori Aoyama , Kyoichi Suguro , Kumi Okuwada , Shuichi Komatsu , Kazuhide Abe
发明人： Kazuya Nishihori , Yoshiaki Kitaura , Yoshikazu Tanabe , Tomonori Aoyama , Kyoichi Suguro , Kumi Okuwada , Shuichi Komatsu , Kazuhide Abe
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/06 , H01L27/095 , H01L29/92 , H01L27/108
CPC分类号： H01L27/0629 , H01L27/0605 , H01L27/10852 , H01L28/40
摘要： A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
摘要翻译：其中SiO 2膜和第一布线层依次布置在GaAs衬底上的半导体器件。在第一布线层上形成电容器。电容器包括从下侧依次具有由Ti层，Mo层和Pt层构成的多层结构的下电极。电容器还包括由钛酸锶制成的电介质膜。电容器还包括从下侧依次具有由WNx层（120μm）和W层（300nm）组成的多层结构的上部电极。与电介质膜接触的上电极的表面由氮化钨层限定。

43. 发明授权

US5641702A Method of making semiconductor integrated-circuit capacitor 失效
标题翻译：制造半导体集成电路电容器的方法
公开(公告)号：US5641702A
公开(公告)日：1997-06-24
申请号：US420649
申请日：1995-04-12
申请人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
发明人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
IPC分类号： H01L21/28 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/49 , H01L29/92 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L28/60 , H01L29/49 , H01L29/92 , H01L21/31604 , H01L28/55 , H01L28/56
摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
摘要翻译：半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

44. 发明授权

US5455747A Vehicle lighting device 失效
标题翻译：车辆照明装置
公开(公告)号：US5455747A
公开(公告)日：1995-10-03
申请号：US265159
申请日：1994-06-24
申请人： Tomonori Aoyama
发明人： Tomonori Aoyama
IPC分类号： B60Q1/26 , B60Q1/30 , F21S8/10 , F21V5/00 , G02B5/32 , G03H1/22
CPC分类号： F21S48/218 , B60Q1/2607 , B60Q1/302 , F21S48/215 , F21S48/2212 , F21V5/002 , G02B5/32 , G03H1/30 , G03H2227/06 , G03H2250/34 , G03H2270/21
摘要： A lighting device includes a lighting device body, a light source placed within the lighting device body, a lens mounted in the front opening of the lighting device body, and a hologram attached to at least one specific area on the lens. At least part of light emitted from the light source is refracted by the hologram and a holographic image recorded in the hologram 16 is reproduced. A desired pattern is recorded is recorded in the form of a holographic image in the hologram. Visual presentation and light distribution characteristics, like those a conventional lighting device having a pattern of lens steps physically formed in the lens surface, can be obtained without additional optical parts.
摘要翻译：照明装置包括照明装置主体，放置在照明装置主体内的光源，安装在照明装置主体的前开口中的透镜以及附着到透镜上的至少一个特定区域的全息图。从光源发射的光的至少一部分被全息图折射，并且再现记录在全息图16中的全息图像。在全息图中以全息图像的形式记录期望的图案。与没有附加光学部件的情况相比，可以获得视觉呈现和光分布特性，就像在透镜表面物理上形成透镜台阶的传统照明装置一样。

45. 发明授权

US5440157A Semiconductor integrated-circuit capacitor having a carbon film electrode 失效
标题翻译：具有碳膜电极的半导体集成电路电容器
公开(公告)号：US5440157A
公开(公告)日：1995-08-08
申请号：US094422
申请日：1993-07-16
申请人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
发明人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
IPC分类号： H01L21/28 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/49 , H01L29/92 , H01L29/43
CPC分类号： H01L27/10852 , H01L28/60 , H01L29/49 , H01L29/92 , H01L21/31604 , H01L28/55 , H01L28/56
摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
摘要翻译：半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

46. 发明授权

US5162263A Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus 失效
标题翻译：具有硅化物结构的半导体器件及其制造方法以及加热装置
公开(公告)号：US5162263A
公开(公告)日：1992-11-10
申请号：US755820
申请日：1991-09-06
申请人： Iwao Kunishima , Tomonori Aoyama , Kyoichi Suguro
发明人： Iwao Kunishima , Tomonori Aoyama , Kyoichi Suguro
IPC分类号： H01L29/78 , H01L21/225 , H01L21/28 , H01L21/331 , H01L21/336 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/49
CPC分类号： H01L29/66272 , H01L21/2257 , H01L29/41 , H01L29/45 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66575 , Y10S148/019 , Y10S257/90
摘要： A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.
摘要翻译：半导体器件包括第一导电类型的半导体衬底。绝缘膜和金属膜依次形成在半导体衬底的主顶表面上。第二导电类型的杂质扩散层选择性地形成在半导体衬底的主顶表面上。半导体器件还包括由半导体衬底的构成元件和金属元素组成的金属化合物层。金属化合物层以不与绝缘膜接触的方式形成在杂质扩散层中，并且半导体衬底的主背面侧上的金属化合物层具有平行于该半导体衬底的顶表面形成的面半导体衬底。该方法还包括冷却衬底的顶部以形成导致硅化物层底部的掺杂剂浓度增加的温度梯度。

47. 发明授权

US08435872B2 Method and apparatus for manufacturing semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US08435872B2
公开(公告)日：2013-05-07
申请号：US12831604
申请日：2010-07-07
申请人： Tomonori Aoyama
发明人： Tomonori Aoyama
IPC分类号： H01L21/26
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/26586 , H01L21/324 , H01L21/67017 , H01L21/823814 , H01L21/823821 , H01L29/6659 , H01L29/66795 , H01L29/66803 , H01L29/7833
摘要： According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.
摘要翻译：根据一个实施例，在半导体器件的制造方法中，将半导体衬底的表面区域修改为非晶层。在含有掺杂剂的气体气氛中对形成非晶层的半导体衬底照射微波，以在半导体衬底中形成扩散层。掺杂剂扩散到非晶层中并被激活。

48. 发明授权

US08071447B2 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08071447B2
公开(公告)日：2011-12-06
申请号：US12704315
申请日：2010-02-11
申请人： Seiji Inumiya , Tomonori Aoyama
发明人： Seiji Inumiya , Tomonori Aoyama
IPC分类号： H01L21/336
CPC分类号： H01L21/28167 , H01L21/02057 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/7624 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method includes removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the substrate on the surface of the substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into an insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the substrate, and oxygen.
摘要翻译：一种半导体器件的制造方法，其特征在于，在半导体基板上通过蚀刻，通过使用液体氧化剂对所述基板的表面进行氧化而不使所述表面暴露在大气中而除去半导体基板上的绝缘膜，由此形成含有成分的氧化物的第一绝缘膜衬底表面上的衬底元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 进行热处理，将第一至第三绝缘膜变成由含有铝，稀土元素，基板的构成元素和氧的混合物构成的绝缘膜。

49. 发明申请

US20110062528A1 Semiconductor device and semiconductor device manufacturing method 失效
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20110062528A1
公开(公告)日：2011-03-17
申请号：US12926430
申请日：2010-11-17
申请人： Tomonori Aoyama
发明人： Tomonori Aoyama
IPC分类号： H01L27/092
CPC分类号： H01L21/823835 , H01L29/1033
摘要： A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the gate insulation film and having a thickness smaller than that of the silicide gate electrode of the n-type MISFET, the silicide gate electrode of the p-type MISFET having a ratio of metal content higher than that of the silicide gate electrode of the n-type MISFET.
摘要翻译：半导体器件包括半导体衬底; 形成在所述半导体基板上的栅极绝缘膜; 形成在栅极绝缘膜上的n型MISFET的硅化物栅电极; 以及形成在栅极绝缘膜上并且具有比n型MISFET的硅化物栅电极的厚度小的p型MISFET的硅化物栅电极，p型MISFET的硅化物栅电极的比例为金属含量高于n型MISFET的硅化物栅电极。

50. 发明申请

US20100203704A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20100203704A1
公开(公告)日：2010-08-12
申请号：US12704315
申请日：2010-02-11
申请人： Seiji INUMIYA , Tomonori Aoyama
发明人： Seiji INUMIYA , Tomonori Aoyama
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L21/28167 , H01L21/02057 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/7624 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen.
摘要翻译：半导体器件制造方法包括：通过使用液体氧化剂蚀刻并随后氧化半导体衬底的表面而在半导体衬底上去除绝缘膜而不将该表面暴露在大气中，从而形成含有氧化物的第一绝缘膜半导体衬底的表面上的构成元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 并且进行热处理以将第一至第三绝缘膜改变为由含有铝，稀土元素，半导体衬底的构成元素和氧的混合物制成的绝缘膜。

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