专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100203704A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20100203704A1
公开(公告)日：2010-08-12
申请号：US12704315
申请日：2010-02-11
申请人： Seiji INUMIYA , Tomonori Aoyama
发明人： Seiji INUMIYA , Tomonori Aoyama
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L21/28167 , H01L21/02057 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/7624 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66795 , H01L29/785
摘要： A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen.
摘要翻译：半导体器件制造方法包括：通过使用液体氧化剂蚀刻并随后氧化半导体衬底的表面而在半导体衬底上去除绝缘膜而不将该表面暴露在大气中，从而形成含有氧化物的第一绝缘膜半导体衬底的表面上的构成元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 并且进行热处理以将第一至第三绝缘膜改变为由含有铝，稀土元素，半导体衬底的构成元素和氧的混合物制成的绝缘膜。

2. 发明申请

US20100133623A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100133623A1
公开(公告)日：2010-06-03
申请号：US12626216
申请日：2009-11-25
申请人： Seiji INUMIYA , Tomonori Aoyama
发明人： Seiji INUMIYA , Tomonori Aoyama
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L29/513 , H01L29/517
摘要： A silicon oxynitride film is formed on entire surface of a semiconductor substrate, a lanthanum oxide film is formed on the silicon oxynitride film and the lanthanum oxide film is removed from a pMOS region. Then, a nitrided hafnium silicate film serving as a highly dielectric film is formed on the entire surface, an aluminum-containing titanium nitride film is formed, a polysilicon film is formed, and the stacked films are patterned into a gate electrode configuration. Next, impurities are introduced into a source/drain region, and an annealing for activating the impurities is utilized to diffuse the aluminum included in the aluminum-containing titanium nitride film to the interface between the silicon oxynitride film and the nitrided hafnium aluminum silicate film in the pMOS region.
摘要翻译：在半导体衬底的整个表面上形成氧氮化硅膜，在氧氮化硅膜上形成氧化镧膜，并从pMOS区域除去氧化镧膜。然后，在整个表面上形成用作高电介质膜的氮化铪硅酸盐膜，形成含铝的氮化钛膜，形成多晶硅膜，并将层叠的膜图案化为栅电极构造。接下来，将杂质引入源极/漏极区域，并且利用用于激活杂质的退火将包含在含铝氮化钛膜中的铝扩散到氮氧化硅膜和氮化铪硅酸铝膜之间的界面 pMOS区域。

3. 发明申请

US20120184096A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120184096A1
公开(公告)日：2012-07-19
申请号：US13434889
申请日：2012-03-30
申请人： Masato KOYAMA , Yoshinori TSUCHIYA , Seiji INUMIYA
发明人： Masato KOYAMA , Yoshinori TSUCHIYA , Seiji INUMIYA
IPC分类号： H01L21/283
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L21/823857 , H01L29/4975 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si
摘要翻译：可以提供一种半导体器件的制造方法，该半导体器件包括具有低阈值电压Vth和Ni-FUSI / SiON或高k栅极绝缘膜结构的CMIS。该方法包括：在衬底中形成彼此绝缘的p型半导体区域和n型半导体区域; 在p型和n型半导体区分别形成第一和第二栅极绝缘膜; 在所述第一栅极绝缘膜上方形成具有Ni / Si <31/12的组成的第一硅化镍和在所述第二栅极绝缘膜上具有Ni /Si≥31/ 12的组成的第二硅化镍; 以及通过使铝通过第一硅化镍扩散，在第一硅化镍和第一栅极绝缘膜之间的界面处分离铝。

4. 发明申请

US20110062561A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110062561A1
公开(公告)日：2011-03-17
申请号：US12880009
申请日：2010-09-10
申请人： Nao AKIYAMA , Seiji INUMIYA
发明人： Nao AKIYAMA , Seiji INUMIYA
IPC分类号： H01L21/314 , H01L29/00
CPC分类号： H01L29/1054 , H01L21/28088 , H01L21/823807 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A method of manufacturing a semiconductor device comprising: forming a p type region and an n type region in a main surface of a semiconductor substrate, the p type region and the n type region being insulated from each other with an element-isolation region; forming a first insulating film on the p type region and on the n type region, the first insulating film being made of any one of a silicon oxide film and a silicon oxynitride film; forming a lanthanum oxide film on the first insulating film on the p type region; forming a second insulating film both on the lanthanum oxide film on the p type region and on the first insulating film on the n type region, the second insulating film containing any one of hafnium and zirconium; and forming a titanium nitride film on the second insulating film, the titanium nitride film satisfying TixNy where x/y
摘要翻译：一种制造半导体器件的方法，包括：在半导体衬底的主表面中形成p型区域和n型区域，p型区域和n型区域通过元件隔离区域彼此绝缘; 在p型区域和n型区域上形成第一绝缘膜，所述第一绝缘膜由氧化硅膜和氮氧化硅膜中的任一种构成; 在p型区域上的第一绝缘膜上形成氧化镧膜; 在p型区域上的氧化镧膜和n型区域上的第一绝缘膜上形成第二绝缘膜，第二绝缘膜包含铪和锆中的任一种; 在第二绝缘膜上形成氮化钛膜，满足TixNy的氮化钛膜，其中x / y <1。

5. 发明申请

US20120077336A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120077336A1
公开(公告)日：2012-03-29
申请号：US13311850
申请日：2011-12-06
申请人： Akio KANEKO , Seiji INUMIYA
发明人： Akio KANEKO , Seiji INUMIYA
IPC分类号： H01L21/28
CPC分类号： H01L21/31604 , H01L21/28044 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L29/4916 , H01L29/518 , H01L29/78
摘要： A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.
摘要翻译：本发明的半导体器件包括：半导体层; 设置在所述半导体层上并且包括Hf和Zr中的至少一种的栅极绝缘膜; 以及设置在所述栅极绝缘膜上并包括包含Hf和Zr中的至少一种的碳氮化物的栅电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式