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41. 发明申请

US20110042653A1 Near-Infrared Absorbing Film Compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US20110042653A1
公开(公告)日：2011-02-24
申请号：US12543003
申请日：2009-08-18
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： H01L51/46 , G03F7/004 , G03F7/20 , H01L31/02
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

42. 发明授权

US09069245B2 Near-infrared absorptive layer-forming composition and multilayer film 有权
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US09069245B2
公开(公告)日：2015-06-30
申请号：US13091287
申请日：2011-04-21
申请人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/09 , G03F7/11 , G03F7/004 , G02B5/20 , G02B5/22
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译：包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。

43. 发明授权

US08772376B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08772376B2
公开(公告)日：2014-07-08
申请号：US12542970
申请日：2009-08-18
申请人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
发明人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
IPC分类号： C09D163/00 , C08L63/00 , C08K5/00 , B32B27/20 , B32B27/38 , C08G59/32 , C08G59/68 , G02B5/22
CPC分类号： G03F7/0388 , G03F7/038 , G03F7/091 , G03F7/11 , H01L51/447
摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

44. 发明授权

US08586283B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08586283B2
公开(公告)日：2013-11-19
申请号：US13608409
申请日：2012-09-10
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

45. 发明申请

US20100272967A1 METHOD OF FORMING A PATTERN OF AN ARRAY OF SHAPES INCLUDING A BLOCKED REGION 有权
标题翻译：形成包括封闭区域的图形阵列的图案的方法
公开(公告)号：US20100272967A1
公开(公告)日：2010-10-28
申请号：US12430919
申请日：2009-04-28
申请人： Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
发明人： Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
IPC分类号： G03F7/20 , B32B3/10
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/095 , G03F7/203 , Y10T428/24802
摘要： A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.
摘要翻译：在基板上形成具有第二光敏性的第二光致抗蚀剂。在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。优选地，第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分，而第二光致抗蚀剂保持完整。使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光，以在第二光致抗蚀剂中形成多个光刻曝光的形状。多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。

46. 发明授权

US07501353B2 Method of formation of a damascene structure utilizing a protective film 失效
标题翻译：使用保护膜形成镶嵌结构的方法
公开(公告)号：US07501353B2
公开(公告)日：2009-03-10
申请号：US11615272
申请日：2006-12-22
申请人： Wai-Kin Li , Wu-Song Huang
发明人： Wai-Kin Li , Wu-Song Huang
IPC分类号： H01L21/20
CPC分类号： H01L21/31144 , H01L21/76808 , H01L2221/1031 , H01L2221/1063
摘要： Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed.
摘要翻译：公开了一种在镶嵌工艺中形成特征的方法。根据该方法，通孔形成在电介质层中，然后被一层高分子量聚合物覆盖。高分子量聚合物覆盖通孔但不进入通孔。然后通过高分子量聚合物和电介质层蚀刻沟槽。然后除去任何剩余的高分子量聚合物。

47. 发明申请

US20080153296A1 METHOD OF FORMATION OF A DAMASCENE STRUCTURE UTILIZING A PROTECTIVE FILM 失效
标题翻译：使用保护膜形成丹参结构的方法
公开(公告)号：US20080153296A1
公开(公告)日：2008-06-26
申请号：US11615272
申请日：2006-12-22
申请人： Wai-Kin Li , Wu-Song Huang
发明人： Wai-Kin Li , Wu-Song Huang
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/76808 , H01L2221/1031 , H01L2221/1063
摘要： Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed.
摘要翻译：公开了一种在镶嵌工艺中形成特征的方法。根据该方法，通孔形成在电介质层中，然后被一层高分子量聚合物覆盖。高分子量聚合物覆盖通孔但不进入通孔。然后通过高分子量聚合物和电介质层蚀刻沟槽。然后除去任何剩余的高分子量聚合物。

48. 发明申请

US20120178027A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS 有权
标题翻译：多次曝光光刻法
公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一个方法。该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

49. 发明申请

US20110129652A1 Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat 有权
标题翻译：通过调整大衣的光刻胶线的化学修剪
公开(公告)号：US20110129652A1
公开(公告)日：2011-06-02
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/02 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

50. 发明申请

US20090311490A1 CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
标题翻译：通过调谐过滤材料的化学品线的化学研究
公开(公告)号：US20090311490A1
公开(公告)日：2009-12-17
申请号：US12137743
申请日：2008-06-12
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/00 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

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