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41. 发明授权

US08513101B2 Method of synthesizing nanowires 有权
标题翻译：纳米线合成方法
公开(公告)号：US08513101B2
公开(公告)日：2013-08-20
申请号：US12560768
申请日：2009-09-16
申请人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
发明人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
摘要翻译：一种合成纳米线的方法。该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线）方法。

42. 发明申请

US20120161159A9 Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US20120161159A9
公开(公告)日：2012-06-28
申请号：US10758136
申请日：2004-01-16
申请人： Eun-Kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-Kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00 , H01L27/15 , H01L33/00 , H01L31/12
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

43. 发明授权

US07863813B2 Inorganic electroluminescence device using quantum dots 失效
标题翻译：使用量子点的无机电致发光器件
公开(公告)号：US07863813B2
公开(公告)日：2011-01-04
申请号：US12010869
申请日：2008-01-30
申请人： Shang-hyeun Park , Byoung-lyong Choi
发明人： Shang-hyeun Park , Byoung-lyong Choi
IPC分类号： H05B33/00
CPC分类号： C09K11/612 , C09K11/642 , H01H13/83 , H01H2219/018 , H01H2219/052 , H01L51/502 , H05B33/14
摘要： An inorganic electroluminescence device including: a substrate; a first electrode formed on the substrate; an inorganic light emitting layer layer formed on the first electrode; a dielectric layer formed on the inorganic light emitting layer; a second electrode formed on the dielectric layer; and a quantun dot layer that is formed between the first electrode and the inorganic light emitting layer and emits light by being excited by visible light emitted from the inorganic light emitting layer.
摘要翻译：一种无机电致发光器件，包括：基板; 形成在所述基板上的第一电极; 形成在第一电极上的无机发光层; 形成在无机发光层上的电介质层; 形成在所述电介质层上的第二电极; 以及形成在第一电极和无机发光层之间的量子点层，并且通过由无机发光层发射的可见光激发而发光。

44. 发明授权

US07750984B2 Photoluminescence liquid crystal display 失效
标题翻译：光致发光液晶显示
公开(公告)号：US07750984B2
公开(公告)日：2010-07-06
申请号：US11812437
申请日：2007-06-19
申请人： Kyoung-ho Ha , Byoung-lyong Choi , Jae-ho Lee
发明人： Kyoung-ho Ha , Byoung-lyong Choi , Jae-ho Lee
IPC分类号： G02F1/135 , G02F1/1335
CPC分类号： G02B6/0056 , G02F1/133617
摘要： Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要翻译：提供了使用发射偏振光的光源的光致发光液晶显示器（LCD）。光致发光LCD可以包括发射偏振光的光源，包括具有多个像素区域的液晶层并相对于每个像素区域分别调制偏振光的偏振方向的光控制单元，仅当偏振光具有偏振方向时才产生调制光，并且由穿过偏振器的光激发的光致发光层和通过光致发光发射激发光。因此，附加的偏振器可以不在光控制单元的后表面上，使得光致发光LCD可以具有更简单的结构和增加的光使用效率。

45. 发明申请

US20080055515A1 Photoluminescence liquid crystal display 失效
标题翻译：光致发光液晶显示
公开(公告)号：US20080055515A1
公开(公告)日：2008-03-06
申请号：US11812437
申请日：2007-06-19
申请人： Kyoung-ho Ha , Byoung-lyong Choi , Jae-ho Lee
发明人： Kyoung-ho Ha , Byoung-lyong Choi , Jae-ho Lee
IPC分类号： G02F1/13357 , G02F1/1335
CPC分类号： G02B6/0056 , G02F1/133617
摘要： Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要翻译：提供了使用发射偏振光的光源的光致发光液晶显示器（LCD）。光致发光LCD可以包括发射偏振光的光源，包括具有多个像素区域的液晶层并相对于每个像素区域分别调制偏振光的偏振方向的光控制单元，仅当偏振光具有偏振方向时才产生调制光，并且由穿过偏振器的光激发的光致发光层和通过光致发光发射激发光。因此，附加的偏振器可以不在光控制单元的后表面上，使得光致发光LCD可以具有更简单的结构和增加的光使用效率。

46. 发明申请

US20070054445A1 METHOD OF MANUFACTURING NANO SCALE SEMICONDUCTOR DEVICE USING NANO PARTICLES 有权
标题翻译：使用纳米颗粒制造纳米尺度半导体器件的方法
公开(公告)号：US20070054445A1
公开(公告)日：2007-03-08
申请号：US11240473
申请日：2005-10-03
申请人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-lyong Choi
发明人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-lyong Choi
IPC分类号： H01L21/338 , H01L21/461
CPC分类号： H01L21/8238 , H01L21/3212 , H01L33/08 , H01L33/24 , Y10S977/755 , Y10S977/758 , Y10S977/773
摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.
摘要翻译：提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

47. 发明申请

US20060113552A1 Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same 有权
公开(公告)号：US20060113552A1
公开(公告)日：2006-06-01
申请号：US11285192
申请日：2005-11-23
申请人： In-jae Song , Byoung-lyong Choi
发明人： In-jae Song , Byoung-lyong Choi
IPC分类号： G05B15/00 , H01L21/00 , H01L33/00
CPC分类号： H01L33/0058 , H01L27/14601 , H01L27/14645 , H01L27/14689 , H01L27/14698 , H01L27/156 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.

48. 发明申请

US20050074969A1 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US20050074969A1
公开(公告)日：2005-04-07
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L29/41 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/82 , H01L21/8238 , H01L23/48 , H01L23/52 , H01L27/04 , H01L29/08 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

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