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    • 43. 发明申请
    • IMAGING SYSTEMS WITH ARRAYS OF ALIGNED LENSES
    • 具有对准镜片阵列的成像系统
    • US20120188421A1
    • 2012-07-26
    • US13053728
    • 2011-03-22
    • Ulrich Boettiger
    • Ulrich Boettiger
    • H04N5/335H01L31/18
    • H04N5/2254
    • An imaging system may include an array of lenses, each of which is aligned over a respective one of a plurality of imaging pixels. The array of lenses may be formed in two layers. The first layer may include a first set of non-adjacent lenses and centering structures between the first lenses. The centering structures may be aligned with the first set of lenses as part of a mask design with a high level of accuracy. The second layer may include a second set of lenses, each of which is formed on a respective one of the centering structures. Forming the second set of lenses may include a reflow process in which surface tension forces center the second set of lenses on their respective centering structures, thereby aligning the second set of lenses with the first set of lenses with a high level of accuracy.
    • 成像系统可以包括透镜阵列,每个透镜阵列在多个成像像素中的相应一个上对准。 透镜阵列可以形成为两层。 第一层可以包括第一组非相邻透镜和第一透镜之间的定心结构。 定心结构可以与第一组透镜对准,作为掩模设计的一部分,具有高精度。 第二层可以包括第二组透镜,每个透镜形成在相应的定心结构之一上。 形成第二组透镜可以包括回流工艺,其中表面张力将第二组透镜定位在它们各自的对中结构上,从而以高精度对准第二组透镜与第一组透镜。
    • 46. 发明申请
    • Semiconductor constructions
    • 半导体结构
    • US20050233588A1
    • 2005-10-20
    • US11115853
    • 2005-04-25
    • Ulrich BoettigerScott Light
    • Ulrich BoettigerScott Light
    • C23F1/00G03F7/004G03F7/20G03F7/40H01L21/302H01L21/311H01L21/76
    • G03F7/2024G03F7/0045G03F7/40
    • The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.
    • 本发明包括在光致抗蚀剂显影后可以选择性地控制含光致抗蚀剂的掩模组合物的尺寸和形状的方法。 例如,可以利用光刻工艺在衬底上形成光致抗蚀剂特征。 随后,光致抗蚀剂特征中的至少一些可以暴露于光化辐射以引起物质从光致抗蚀剂的释放。 在光致抗蚀剂特征和特征之间的间隙上形成一层材料。 该材料在溶剂中具有溶解性,当材料与从光致抗蚀剂释放的物质相互作用时,其溶解度降低。 使用溶剂去除材料的不足够接近光致抗蚀剂的部分,以便相对于足够靠近光致抗蚀剂的部分选择性地接收物质。 在形成材料层之前或之后,光致抗蚀剂特征可以暴露于光化辐射。
    • 49. 发明授权
    • System for targeting cells or other materials
    • 用于靶向细胞或其他材料的系统
    • US08538120B2
    • 2013-09-17
    • US13114982
    • 2011-05-24
    • Kenneth Edward SalsmanUlrich BoettigerDmitry BakinCurtis W. Stith
    • Kenneth Edward SalsmanUlrich BoettigerDmitry BakinCurtis W. Stith
    • G06K9/00
    • G01N15/1012G01N15/1434G01N15/1459G01N15/1463G01N2015/1025G01N2015/1443
    • An image sensor integrated circuit may contain image sensor pixels. A channel containing a fluid with particles such as cells may be formed on top of the image sensor. Some of the image sensor pixels may form a calibration sensor and some of the image sensor pixels may form an imager. As the fluid and particles flow through the channel at a flow rate, the calibration sensor may measures the flow rate and illumination intensity in the channel. Based on calibration data such as measured flow rate and measured illumination intensity, adjustments may be made to ensure that the imager acquires satisfactory image data. The adjustments may include flow rate adjustments, image acquisition data rate adjustments, and illumination adjustments. A processing unit in the channel may contain a laser or other component to destroy selected cells. A flared region in the channel may be used as a chromatograph.
    • 图像传感器集成电路可以包含图像传感器像素。 可以在图像传感器的顶部上形成包含诸如细胞等颗粒的流体的通道。 一些图像传感器像素可以形成校准传感器,并且一些图像传感器像素可以形成成像器。 当流体和颗粒以流速流过通道时,校准传感器可以测量通道中的流量和照射强度。 基于诸如测量流量和测量的照射强度的校准数据,可以进行调整以确保成像器获得令人满意的图像数据。 调整可以包括流量调整,图像采集数据速率调整和照明调整。 通道中的处理单元可以包含用于摧毁所选择的单元的激光器或其他组件。 通道中的扩口区域可用作色谱仪。
    • 50. 发明申请
    • SPECTRALLY TUNED PLASMONIC LIGHT COLLECTORS
    • US20120326256A1
    • 2012-12-27
    • US13365067
    • 2012-02-02
    • Kenneth Edward SalsmanUlrich BoettigerDmitry BakinCurtis W. Stith
    • Kenneth Edward SalsmanUlrich BoettigerDmitry BakinCurtis W. Stith
    • H01L31/0232
    • H01L27/14625H01L27/14603
    • Electronic devices may be provided with imaging modules that include plasmonic light collectors. Plasmonic light collectors may be configured to exploit an interaction between incoming light and plasmons in the plasmonic light collector to alter the path of the incoming light. Plasmonic light collectors may include one or more spectrally tuned plasmonic image pixels configured to preferentially trap light of a given frequency. Spectrally tuned plasmonic image pixels may include plasmonic structures formed form a patterned metal layer over doped silicon layers. Doped silicon layers may be interposed between plasmonic structures and a reflective layer. Plasmonic image pixels may be used to absorb and detect as much as, or more than, ninety percent of incident light at wavelengths ranging from the infrared to the ultraviolet. Plasmonic image pixels that capture light of different colors may be arranged in patterned arrays to form imager modules or imaging spectrometers for optofluidic microscopes.
    • 电子设备可以设置有包括等离子体激光收集器的成像模块。 等离子体光收集器可以被配置为利用等离子体光收集器中的入射光和等离子体激元之间的相互作用来改变入射光的路径。 等离子体光收集器可以包括被配置为优先捕获给定频率的光的一个或多个频谱调谐等离子体像图像。 光谱调谐等离子体激元图像像素可以包括由掺杂硅层上的图案化金属层形成的等离子体结构。 掺杂的硅层可以介于等离子体激元结构和反射层之间。 等离子体像图像可用于吸收和检测多达或多于百分之九十的入射光,其范围从红外至紫外。 捕获不同颜色的光的等离子体像图像可以以图案化阵列布置以形成用于光流体显微镜的成像器模块或成像光谱仪。