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41. 发明申请

US20050258692A1 Torque converter and system using the same 失效
标题翻译：转矩转换器和系统使用相同
公开(公告)号：US20050258692A1
公开(公告)日：2005-11-24
申请号：US11171336
申请日：2005-07-01
申请人： Richard Wise
发明人： Richard Wise
IPC分类号： B60K17/12 , H02K7/02 , H02K49/10 , H02K7/06 , H02K49/00
CPC分类号： H02K53/00 , B60K17/12 , H02K7/025 , H02K49/102 , Y02E60/16 , Y02T10/6204 , Y10T464/30
摘要： A torque converter device comprises a flywheel rotatable about a first axis, the flywheel including a first body portion having a first radius from a circumferential surface and a first radius of curvature, a first plurality of magnets mounted in the first body portion, each having first ends disposed from the circumferential surface of the first body portion, and each of the first ends of first plurality of magnets having a second radius of curvature similar to the first radius of curvature of the first body portion, a second plurality of magnets mounted in the first body portion, each of the second plurality of magnets being disposed from the circumferential surface of the first body portion, and a generator disk rotatable about a second axis angularly offset with respect to the first axis, the generator disk including a second body portion, and a third plurality of magnets within the second body portion for magnetically coupling to the first and second pluralities of magnets.
摘要翻译：变矩器装置包括可围绕第一轴线旋转的飞轮，飞轮包括第一主体部分，第一主体部分具有从圆周表面的第一半径和第一曲率半径，安装在第一主体部分中的第一多个磁体，每个具有第一主体部分从第一主体部分的圆周表面设置的端部，并且第一多个磁体的每个第一端部具有与第一主体部分的第一曲率半径相似的第二曲率半径，安装在第一主体部分中的第二多个磁体第一主体部分，第二多个磁体中的每一个从第一主体部分的圆周表面设置;以及发电机盘，可围绕第二轴线旋转，第二轴线相对于第一轴线成角度偏移，发电机盘片包括第二主体部分，以及第二主体部分内的第三多个磁体，用于磁耦合到第一和第二多个磁体。

42. 发明申请

US20050189263A1 Apparatus and method for isolating materials 失效
公开(公告)号：US20050189263A1
公开(公告)日：2005-09-01
申请号：US11105416
申请日：2005-04-14
申请人： Richard Wise
发明人： Richard Wise
IPC分类号： B03C1/04 , B03C1/22 , B03C1/23 , B01D21/00 , B03C1/00 , C02F1/52
CPC分类号： B03C1/04 , B03C1/22 , B03C1/23
摘要： Apparatus is provided for separating non-magnetic mineral values from a source containing magnetic material and non magnetic material. The apparatus includes first and second conveyers in overlying relation which counter-rotate relative to one another. One of the conveyers includes a magnetic assembly which cooperates with paddles on the upper conveyer to progressively isolate values from magnetic material. Multiple stages are provided for intermittent magnetic interactions such that the non-magnetic materials are effectively isolated from the magnetic materials.

43. 发明申请

US20050070064A1 SELF-LIMITED METAL RECESS FOR DEEP TRENCH METAL FILL 失效
标题翻译：自有金属浸渍深层金属镀膜
公开(公告)号：US20050070064A1
公开(公告)日：2005-03-31
申请号：US10605362
申请日：2003-09-25
申请人： Nikki Edleman , Richard Wise
发明人： Nikki Edleman , Richard Wise
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/8242 , H01L21/8234
CPC分类号： H01L27/10861 , H01L21/28568 , H01L21/32136
摘要： Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.
摘要翻译：公开了一种制造深沟槽电容器结构的方法，其在衬底中形成沟槽，用多晶硅衬垫对沟槽进行排列，并沿着多晶硅衬垫形成氮化钛柱。该方法使用基本上各向同性的氯基干化学法蚀刻氮化钛柱。该蚀刻工艺除去氮化钛柱的上部，而不影响多晶硅衬垫。蚀刻过程仅在氮化钛柱的最上部进行攻击，使得在蚀刻工艺完成之后，氮化钛柱的其余下部基本上不受蚀刻工艺的影响。然后，该方法用附加的多晶硅材料填充氮化钛柱和沟槽的上部之间的空间。同时填充空间的过程形成多晶硅插塞和多晶硅盖。

44. 发明授权

US08901005B2 Method for simultaneously forming features of different depths in a semiconductor substrate 有权
标题翻译：同时形成半导体衬底中不同深度的特征的方法
公开(公告)号：US08901005B2
公开(公告)日：2014-12-02
申请号：US13865223
申请日：2013-04-18
申请人： Habib Hichri , Xi Li , Richard Wise
发明人： Habib Hichri , Xi Li , Richard Wise
IPC分类号： H01L21/311 , H01L21/84 , H01L21/3065 , H01L21/762 , H01L27/108 , H01L29/66
CPC分类号： H01L21/3065 , H01L21/76229 , H01L21/84 , H01L27/1087 , H01L29/66181
摘要： Embodiments of the invention may include first providing a stack of layers including a semiconductor substrate, a buried oxide layer on the semiconductor substrate, a semiconductor-on-insulator layer on the buried-oxide layer, a nitride layer on the semiconductor-on-insulator layer, and a silicon oxide layer on the nitride layer. A first opening and second opening with a smaller cross-sectional area than the first opening are then formed in the silicon oxide layer, the nitride layer, the semiconductor-on-insulator layer, and the buried-oxide layer. The first opening and the second opening are then etched with a first etching gas. The first opening and the second opening are then etched with a second etching gas, which includes the first etching gas and a halogenated silicon compound, for example, silicon tetrafluoride or silicon tetrachloride. In one embodiment, the first etching gas includes hydrogen bromide, nitrogen trifluoride, and oxygen.
摘要翻译：本发明的实施例可以包括首先提供包括半导体衬底，半导体衬底上的掩埋氧化物层，掩埋氧化物层上的绝缘体上半导体层，绝缘体上半导体上的氮化物层层和氮化物层上的氧化硅层。然后在氧化硅层，氮化物层，绝缘体上半导体层和掩埋氧化物层上形成具有比第一开口更小的横截面面积的第一开口和第二开口。然后用第一蚀刻气体蚀刻第一开口和第二开口。然后用第二蚀刻气体蚀刻第一开口和第二开口，第二蚀刻气体包括第一蚀刻气体和卤化硅化合物，例如四氟化硅或四氯化硅。在一个实施方案中，第一蚀刻气体包括溴化氢，三氟化氮和氧。

45. 发明授权

US08492252B2 Three dimensional integration and methods of through silicon via creation 失效
标题翻译：通过创建三维集成和通过硅的方法
公开(公告)号：US08492252B2
公开(公告)日：2013-07-23
申请号：US13422445
申请日：2012-03-16
申请人： Mukta G. Farooq , Emily R. Kinser , Richard Wise , Hakeem Yusuff
发明人： Mukta G. Farooq , Emily R. Kinser , Richard Wise , Hakeem Yusuff
IPC分类号： H01L21/265
CPC分类号： H01L21/76847 , H01L21/0337 , H01L21/32136 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2225/06541 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
摘要翻译：一种方法包括在结构上图案化光致抗蚀剂层以限定开口并暴露衬底层上的第一平面区域，在第一平面区域中形成衬底层的掺杂部分，去除光致抗蚀剂的一部分以形成限定在衬底层上的第二平面区域，以及蚀刻形成具有由第一开口限定的第一深度的第一腔体，以暴露结构中的第一接触件，并形成由第二开口限定的第二腔室，以暴露第二接触件结构。

46. 发明申请

US20100112800A1 CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CRYSTALLOGRAPHIC ORIENTATIONS AND GATE MATERIALS 有权
标题翻译： CMOS结构及其使用多种晶体取向和栅极材料制造的方法
公开(公告)号：US20100112800A1
公开(公告)日：2010-05-06
申请号：US12683535
申请日：2010-01-07
申请人： Tze-Chiang Chen , Meikei Ieong , Rajarao Jammy , Mukesh V. Khare , Chun-yung Sung , Richard Wise , Hongwen Yan , Ying Zhang
发明人： Tze-Chiang Chen , Meikei Ieong , Rajarao Jammy , Mukesh V. Khare , Chun-yung Sung , Richard Wise , Hongwen Yan , Ying Zhang
IPC分类号： H01L21/28
CPC分类号： H01L21/28079 , H01L21/823807 , H01L21/823842 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L29/045 , H01L29/6659
摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.
摘要翻译：制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。平坦化层位于第二栅极材料层上。平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。也可以在第一栅极叠层上形成蚀刻停止层。所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

47. 发明授权

US07691701B1 Method of forming gate stack and structure thereof 失效
标题翻译：形成栅极叠层的方法及其结构
公开(公告)号：US07691701B1
公开(公告)日：2010-04-06
申请号：US12348332
申请日：2009-01-05
申请人： Michael P. Belyansky , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Ravikumar Ramachandran , James Kenyon Schaeffer , Richard Wise , Keith Kwong Hon Wong , Hongwen Yan
发明人： Michael P. Belyansky , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Ravikumar Ramachandran , James Kenyon Schaeffer , Richard Wise , Keith Kwong Hon Wong , Hongwen Yan
IPC分类号： H01L21/00
CPC分类号： H01L21/823842 , H01L21/823857
摘要： Embodiments of the present invention provide a method of forming gate stacks for field-effect-transistors. The method includes forming a metal-containing layer directly on a first titanium-nitride (TiN) layer, the first TiN layer covering areas of a semiconductor substrate designated for first and second types of field-effect-transistors; forming a capping layer of a second TiN layer on top of the metal-containing layer; patterning the second TiN layer and the metal-containing layer to cover only a first portion of the first TiN layer, the first portion of the first TiN layer covering an area designated for the first type of field-effect-transistors; etching away a second portion of the first TiN layer exposed by the patterning while protecting the first portion of the first TiN layer, from the etching, through covering with at least a portion of thickness of the patterned metal-containing layer; and forming a third TiN layer covering an areas of the semiconductor substrate designated for the second type of field-effect-transistors.
摘要翻译：本发明的实施例提供了一种形成场效应晶体管的栅叠层的方法。该方法包括直接在第一氮化钛（TiN）层上形成含金属层，第一TiN层覆盖用于第一和第二类场效应晶体管的半导体衬底的区域; 在所述含金属层的顶部上形成第二TiN层的覆盖层; 图案化第二TiN层和含金属层以仅覆盖第一TiN层的第一部分，第一TiN层的第一部分覆盖指定用于第一类型的场效应晶体管的区域; 蚀刻通过图案化暴露的第一TiN层的第二部分，同时通过覆盖图案化的含金属层的厚度的至少一部分来保护第一TiN层的第一部分免受蚀刻; 以及形成覆盖指定用于第二类场效应晶体管的半导体衬底的区域的第三TiN层。

48. 发明申请

US20090184392A1 METHOD AND STRUCTURE FOR FORMING TRENCH DRAM WITH ASYMMETRIC STRAP 有权
标题翻译：用不对称带形成TRENCH DRAM的方法和结构
公开(公告)号：US20090184392A1
公开(公告)日：2009-07-23
申请号：US12017154
申请日：2008-01-21
申请人： Kangguo Cheng , Xi Li , Richard Wise
发明人： Kangguo Cheng , Xi Li , Richard Wise
IPC分类号： H01L21/8239 , H01L29/92 , G06F17/50
CPC分类号： H01L21/26586 , H01L27/10867 , H01L29/7833
摘要： A method of forming a trench device structure having a single-side buried strap is provided. The method includes forming a deep trench in a semiconductor substrate, said deep trench having a first side portion and a second side portion; depositing a node dielectric on said deep trench, wherein said node dielectric covers said first side portion and said second side portion; depositing a first conductive layer over said node dielectric; performing an ion implantation or ion bombardment at an angle into a portion of said node dielectric, thereby removing said portion of said node dielectric from said first side portion of said deep trench; and depositing a second conductive layer over said first conductive layer, wherein said second conductive layer outdiffuses into a portion of said semiconductor substrate. A trench device structure having a single-side buried strap is also provided. The device structure includes a semiconductor substrate having a deep trench therein; and a first conductive layer and a second conductive layer sequentially disposed on said deep trench, wherein said second conductive layer outdiffuses into a portion of said semiconductor substrate.
摘要翻译：提供了一种形成具有单面埋入带的沟槽器件结构的方法。该方法包括在半导体衬底中形成深沟槽，所述深沟槽具有第一侧部分和第二侧部分; 在所述深沟槽上沉积节点电介质，其中所述节点电介质覆盖所述第一侧部分和所述第二侧部分; 在所述节点电介质上沉积第一导电层; 以一定角度进行离子注入或离子轰击到所述节点电介质的一部分中，从而从所述深沟槽的所述第一侧部分移除所述节点电介质的所述部分; 以及在所述第一导电层上沉积第二导电层，其中所述第二导电层超出所述半导体衬底的一部分。还提供了具有单面埋置带的沟槽器件结构。该器件结构包括其中具有深沟槽的半导体衬底; 以及顺序地设置在所述深沟槽上的第一导电层和第二导电层，其中所述第二导电层向外延伸到所述半导体衬底的一部分中。

49. 发明授权

US07354867B2 Etch process for improving yield of dielectric contacts on nickel silicides 有权
标题翻译：用于提高硅化镍电介质触点产量的蚀刻工艺
公开(公告)号：US07354867B2
公开(公告)日：2008-04-08
申请号：US10906112
申请日：2005-02-03
申请人： Scott D. Allen , Kenneth A. Bandy , Sadanand V. Deshpande , Richard Wise
发明人： Scott D. Allen , Kenneth A. Bandy , Sadanand V. Deshpande , Richard Wise
IPC分类号： H01L21/44 , H01L21/461
CPC分类号： H01L21/76802 , H01L21/31116
摘要： The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.
摘要翻译：本发明的实施例通常涉及蚀刻工艺，更具体地涉及用于提高硅化镍上的电介质触点的产量的蚀刻处理。在蚀刻过程中使用无氧原料气，以减少或消除在接触表面处的残余物，包括硅化物层的氧化和消耗。接触表面的接触电阻降低，从而提高器件的性能。

50. 发明申请

US20070145844A1 Torque converter and system using the same 失效
标题翻译：转矩转换器和系统使用相同
公开(公告)号：US20070145844A1
公开(公告)日：2007-06-28
申请号：US11711099
申请日：2007-02-27
申请人： Richard Wise
发明人： Richard Wise
IPC分类号： H02K37/00 , H02K7/02 , H02K49/00
CPC分类号： H02K53/00 , B60K17/12 , H02K7/025 , H02K49/102 , Y02E60/16 , Y02T10/6204 , Y10T464/30
摘要： A torque converter device includes a first body having a first radius and a first thickness, a first plurality of magnets mounted in the first body, the first plurality of magnets including a plurality of magnet pairs, each of the magnet pairs being axially disposed along a centerline of the first body along the first radius through the first thickness, a second plurality of magnets mounted in the first body, each of the second plurality of magnets being disposed between each of the plurality of magnet pairs, and a second body having a third plurality of magnets within the second body for magnetically coupling to each of the magnet pairs and the second plurality of magnets, wherein rotation of the first body induces rotation of the second body.
摘要翻译：变矩器装置包括具有第一半径和第一厚度的第一主体，安装在第一主体中的第一多个磁体，第一多个磁体包括多个磁体对，每个磁体对沿着所述第一主体沿着所述第一半径穿过所述第一厚度的中心线，安装在所述第一主体中的第二多个磁体，所述第二多个磁体中的每一个设置在所述多个磁体对中的每一个之间，以及第二主体，第二主体内的多个磁体用于磁耦合到每个磁体对和第二多个磁体，其中第一主体的旋转引起第二主体的旋转。

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