专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050070064A1 SELF-LIMITED METAL RECESS FOR DEEP TRENCH METAL FILL 失效
标题翻译：自有金属浸渍深层金属镀膜
公开(公告)号：US20050070064A1
公开(公告)日：2005-03-31
申请号：US10605362
申请日：2003-09-25
申请人： Nikki Edleman , Richard Wise
发明人： Nikki Edleman , Richard Wise
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/8242 , H01L21/8234
CPC分类号： H01L27/10861 , H01L21/28568 , H01L21/32136
摘要： Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.
摘要翻译：公开了一种制造深沟槽电容器结构的方法，其在衬底中形成沟槽，用多晶硅衬垫对沟槽进行排列，并沿着多晶硅衬垫形成氮化钛柱。该方法使用基本上各向同性的氯基干化学法蚀刻氮化钛柱。该蚀刻工艺除去氮化钛柱的上部，而不影响多晶硅衬垫。蚀刻过程仅在氮化钛柱的最上部进行攻击，使得在蚀刻工艺完成之后，氮化钛柱的其余下部基本上不受蚀刻工艺的影响。然后，该方法用附加的多晶硅材料填充氮化钛柱和沟槽的上部之间的空间。同时填充空间的过程形成多晶硅插塞和多晶硅盖。

2. 发明申请

US20110183443A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK 有权
标题翻译：联系方式与转换ETCH反馈
公开(公告)号：US20110183443A1
公开(公告)日：2011-07-28
申请号：US13021842
申请日：2011-02-07
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Cheng
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Cheng
IPC分类号： H01L21/66
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

3. 发明授权

US08236699B2 Contact patterning method with transition etch feedback 有权
标题翻译：具有过渡蚀刻反馈的接触图案化方法
公开(公告)号：US08236699B2
公开(公告)日：2012-08-07
申请号：US13021842
申请日：2011-02-07
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

4. 发明授权

US07998869B2 Contact patterning method with transition etch feedback 有权
标题翻译：具有过渡蚀刻反馈的接触图案化方法
公开(公告)号：US07998869B2
公开(公告)日：2011-08-16
申请号：US12262860
申请日：2008-10-31
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

5. 发明申请

US20100112729A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK 有权
标题翻译：联系方式与转换ETCH反馈
公开(公告)号：US20100112729A1
公开(公告)日：2010-05-06
申请号：US12262860
申请日：2008-10-31
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/66
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式