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    • 42. 发明申请
    • Method for modifying of composite resin
    • 复合树脂改性方法
    • US20080182942A1
    • 2008-07-31
    • US11698185
    • 2007-01-26
    • Yasuhiro Mori
    • Yasuhiro Mori
    • C08F283/02C08F283/01C08F283/06
    • C08F283/00
    • The present invention provides a method for modifying a composite resin, capable of efficiently obtaining a composite resin with the impact resistance or the like improved. A method for modifying a composite resin containing both an amorphous resin and a crystalline resin or either, and a carbon compound, wherein a modified carbon compound having a wet index (measurement temperature 25° C.) of 40 dyn/cm or more with a silicatizing flame treatment, in which a modifier compound having at least a silane atom is used as a fuel, applied on the surface of a carbon black, a graphite or the like as a carbon compound.
    • 本发明提供能够有效地获得具有耐冲击性等的复合树脂的复合树脂的改性方法。 一种用于改性含有无定形树脂和结晶性树脂的复合树脂的方法,以及碳化合物,其中具有40dyn / cm以上的湿指数(测定温度25℃)的改性碳化合物与 使用其中具有至少一个硅烷原子的改性剂化合物作为燃料的硅化火焰处理作为碳化合物涂覆在炭黑,石墨等的表面上。
    • 44. 发明授权
    • Semiconductor temperature detecting method and its circuit
    • 半导体温度检测方法及其电路
    • US06733174B2
    • 2004-05-11
    • US09918913
    • 2001-07-31
    • Toru MatsumotoYasuhiro Mori
    • Toru MatsumotoYasuhiro Mori
    • G01K701
    • G01K7/01
    • A semiconductor temperature detecting circuit use semiconductor temperature sensors each comprising bipolar transistors connected in a Darlington connection to provide a semiconductor temperature detecting circuit capable of automatically compensating for variations in fabrication of a reference voltage for comparing outputs of temperature sensors. The semiconductor temperature detecting circuit includes a first and a second semiconductor temperature sensor each having bipolar transistors connected in Darlington connection and respectively receiving different constant currents (I and nxI). Temperature detected is based on a corresponding relationship between a ratio of output voltages of the first and the second semiconductor temperature sensors and the temperature.
    • 半导体温度检测电路使用各自包含在达林顿连接中连接的双极晶体管的半导体温度传感器,以提供半导体温度检测电路,能够自动补偿用于比较温度传感器的输出的参考电压的制造变化。 半导体温度检测电路包括第一和第二半导体温度传感器,每个半导体温度传感器各自具有以达林顿连接的双极晶体管,并分别接收不同的恒定电流(I和nxI)。 检测到的温度基于第一和第二半导体温度传感器的输出电压的比率与温度之间的对应关系。