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41. 发明授权

US4972243A Photoelectric conversion apparatus with shielded cell 失效
标题翻译：带屏蔽电池的光电转换装置
公开(公告)号：US4972243A
公开(公告)日：1990-11-20
申请号：US325023
申请日：1989-03-20
申请人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki
发明人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/378
CPC分类号： H04N5/361 , H01L27/14623 , H01L27/14681 , H04N5/374 , H04N5/3745
摘要： A photoelectric conversion apparatus has a plurality of photoelectric conversion cells. Each cell includes a semiconductor transistor having a control electrode area which in turn includes a plurality of main electrode areas for reading signals. The potential of the control electrode area is controlled to store carriers produced by optical pumping in the control electrode area, to read, from the main electrode area, a signal controlled by the storage voltage produced due to the storage, and to perform a refreshing operation to nullify the carriers stored in the control electrode area. A device is provided for performing a peak detection on the basis of signals from the main electrode area. At least one of the photoelectric conversion cells is shielded from light. The peak detection device performs the peak detection by detecting the difference between a peak signal obtained on the basis of a signal from the photoelectric conversion cells and a dark signal from the photoelectric conversion cells shielded from light.
摘要翻译：光电转换装置具有多个光电转换单元。每个单元包括具有控制电极区域的半导体晶体管，该控制电极区域又包括用于读取信号的多个主电极区域。控制电极区域的电位被控制以将通过光泵浦产生的载体存储在控制电极区域中，从主电极区域读取由存储产生的存储电压控制的信号，并执行刷新操作以使存储在控制电极区域中的载体无效。提供了一种基于来自主电极区域的信号执行峰值检测的装置。至少一个光电转换单元被遮光。峰值检测装置通过检测基于来自光电转换单元的信号获得的峰值信号与从屏蔽的光电转换单元的暗信号之间的差来执行峰值检测。

42. 发明授权

US4967067A Signal read-out circuit which lowers diffusion capacitance by limiting emitting current with resistive elements 失效
标题翻译：信号读出电路，通过限制电阻元件的发射电流来降低扩散电容
公开(公告)号：US4967067A
公开(公告)日：1990-10-30
申请号：US364493
申请日：1989-06-09
申请人： Seiji Hashimoto , Tamotsu Satoh , Shigetoshi Sugawa
发明人： Seiji Hashimoto , Tamotsu Satoh , Shigetoshi Sugawa
IPC分类号： H04N5/374 , H01J40/14
CPC分类号： H04N3/1575
摘要： A signal reading circuit has amplifiers for respectively receiving a plurality of signals. The circuit reads out the outputs of the amplifiers to a signal line through resistor elements, wherein each resistor element is a resistance when a switching device is conductive.

43. 发明授权

US4847668A Device and method of photoelectrically converting light into electrical signal 失效
标题翻译：将光电转换为电信号的装置和方法
公开(公告)号：US4847668A
公开(公告)日：1989-07-11
申请号：US275673
申请日：1988-11-23
申请人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki , Tadahiro Ohmi , Tadanori Harada
发明人： Shigetoshi Sugawa , Nobuyoshi Tanaka , Toshiji Suzuki , Tadahiro Ohmi , Tadanori Harada
IPC分类号： H01L27/146 , H04N3/15
CPC分类号： H04N3/1568 , H01L27/14681
摘要： A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a main electrode region of the semiconductor transistor, the signal being controlled by a storage voltage generated by storage of the carriers, and a refresh operation for electrically neutralizing the carriers stored in the control electrode region. A semiconductor reigon having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region is formed in the control electrode region independently of the main electrode region. A photoelectric transducer device including a semiconductor region. Two main electrodes and a control electrode are formed between the main electrodes. A capacitor is provided for controlling a potential of the control electrode in a floating state. The photoelectric transducer device is adapted to control the potential of the control electrode in the floating state through the capacitor to store carriers generated by electromagnetic waves incident on the semiconductor region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided. '

44. 发明授权

US08988571B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US08988571B2
公开(公告)日：2015-03-24
申请号：US12676562
申请日：2008-09-04
申请人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
发明人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
IPC分类号： H04N5/335 , H04N5/355 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/35527 , H04N5/37452 , H04N5/378
摘要： A pixel area with a two-dimensional array of pixels (10) each including a photodiode and a memory area (3a) on which memory sections for holding signals produced by the pixels for continuously recordable frames are separately provided on a semiconductor substrate. All the pixels simultaneously perform a photocharge storage operation, and the signals produced by the photocharge storage are extracted in parallel through mutually independent pixel output lines (14). In a plurality of memory sections connected to one pixel output line, a sample-and-hold transistor of a different memory section is turned on for each exposure cycle so as to sequentially hold signals in a capacitor of each memory section. After the continuous imaging is completed, all the pixel are sequentially read. Unlike CCD cameras, the present sensor does not simultaneously drive all the gate loads. Therefore, the sensor consumes less power yet can be driven at high speeds. The separation between the memory area and pixel area prevents signals from deterioration due to an intrusion of excessive photocharges. As a result, the sensor can perform imaging operations at higher speeds than ever before and yet capture images with higher qualities.
摘要翻译：具有二维像素阵列（10）的像素区域，每个像素（10）包括光电二极管和存储区域（3a），在半导体衬底上分别设置有用于保持用于连续可记录帧的像素产生的信号的存储部分。所有像素同时进行光电荷存储操作，并且通过相互独立的像素输出线（14）并行提取由光电荷存储产生的信号。在连接到一个像素输出线的多个存储器部分中，对于每个曝光周期，不同存储器部分的采样和保持晶体管导通，以便顺序地保持每个存储器部分的电容器中的信号。连续成像完成后，依次读取所有像素。与CCD相机不同，本传感器不会同时驱动所有的栅极负载。因此，传感器消耗较少的功率，但可以高速驱动。存储区域和像素区域之间的分离可以防止信号由于过多的光电荷的入侵而恶化。因此，传感器可以以比以往更高的速度进行成像操作，并且捕获具有更高质量的图像。

45. 发明申请

US20140306344A1 WIRING STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING WIRING STRUCTURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：布线结构，包括布线结构的半导体器件，以及制造半导体器件的方法
公开(公告)号：US20140306344A1
公开(公告)日：2014-10-16
申请号：US14313026
申请日：2014-06-24
申请人： Shigetoshi Sugawa , Akinobu Teramoto , Rihito Kuroda , Gu Xun
发明人： Shigetoshi Sugawa , Akinobu Teramoto , Rihito Kuroda , Gu Xun
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/481 , H01L21/02063 , H01L21/0212 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/76807 , H01L21/76808 , H01L21/76831 , H01L21/76843 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： There is provided with a wiring structure. The wiring stracture has a damascene wiring structure including a metal wiring. The metal wiring is provided in direct contact with an upper surface of a barrier film (SiC(O, N) film) containing silicon (Si), carbon (C), and at least one of oxygen (O) and nitrogen (N) as constituent components.
摘要翻译：设有布线结构。布线结构具有包括金属布线的镶嵌布线结构。金属布线与含有硅（Si），碳（C）和氧（O）和氮（N）中的至少一种的阻挡膜（SiC（O，N）膜）的上表面直接接触，作为组成部分。

46. 发明申请

US20130320477A1 METHOD OF ETCHING OF SOI SUBSTRATE, AND BACK-ILLUMINATED PHOTOELECTRIC CONVERSION MODULE ON SOI SUBSTRATE AND PROCESS OF MANUFACTURE THEREOF 有权
标题翻译： SOI衬底的蚀刻方法和SOI衬底上的后照明光电转换模块及其制造方法
公开(公告)号：US20130320477A1
公开(公告)日：2013-12-05
申请号：US13883828
申请日：2011-10-28
申请人： Tadahiro Ohmi , Tomotsugu Ohashi , Kazuhiro Yoshikawa , Tatsuro Yoshida , Teppei Uchimura , Kazuki Soeda , Shigetoshi Sugawa
发明人： Tadahiro Ohmi , Tomotsugu Ohashi , Kazuhiro Yoshikawa , Tatsuro Yoshida , Teppei Uchimura , Kazuki Soeda , Shigetoshi Sugawa
IPC分类号： H01L31/0248 , H01L21/306
CPC分类号： H01L31/0248 , H01L21/30604 , H01L21/6708 , H01L27/1464 , H01L29/78603
摘要： A method of etching capable of rapidly and flatly performing wet etching on a Si substrate using fluonitric acid represented by HF(a)HNO3(b)H2O(c) (where the unit of a, b and c is wt % and a+b+c=100). The etching rate of an SiO2 layer with the highly concentrated fluonitric acid is significantly lowered by the appropriate selection of its composition as compared with the etching rate of the Si substrate, and etch the Si substrate until the SiO2 layer is exposed. In this way, it is possible to rapidly etch the Si substrate and significantly enhance the flatness of the etched surface.
摘要翻译：使用HF（a）HNO 3（b）H 2 O（c）（其中a，b和c的单位为wt％和a + b）表示的氟酸，在Si衬底上快速且平坦地进行湿蚀刻的方法 + c = 100）。与Si衬底的蚀刻速率相比，通过适当选择其组成，通过适当选择具有高浓度荧光酮的SiO 2层的蚀刻速率，并且蚀刻Si衬底直至暴露SiO 2层。以这种方式，可以快速蚀刻Si衬底并显着提高蚀刻表面的平坦度。

47. 发明授权

US08530947B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US08530947B2
公开(公告)日：2013-09-10
申请号：US13382878
申请日：2010-06-23
申请人： Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
发明人： Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1461
摘要： A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
摘要翻译：在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散区，其中位于其间的传输栅电极。在大致扇形的光接收表面上形成有以FD区域为中心的径向延伸部分的第一区域和位于第一区域外部的第二区域。引入导电类型与要在第一区域中收集的信号电荷相同的掺杂剂，由此由于三维场效应，产生用于使信号从径向延伸部分向中心移动的电场。结果，电荷转移时间减少。此外，由于随后阶段的电路元件可以放置在与浮动扩散区域相邻的位置，所以可以减小浮动扩散区域的寄生电容，并且可以获得高灵敏度的元件。

48. 发明申请

US20110110052A1 MULTILAYER WIRING BOARD 有权
标题翻译：多层接线板
公开(公告)号：US20110110052A1
公开(公告)日：2011-05-12
申请号：US12995514
申请日：2009-05-22
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Hiroshi Imai , Akinobu Teramoto
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Hiroshi Imai , Akinobu Teramoto
IPC分类号： H05K1/18 , H05K1/00
CPC分类号： H05K1/0218 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2223/6688 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H05K1/025 , H05K1/0265 , H05K3/4652 , H05K2201/0191 , H05K2201/0352 , H05K2201/0715 , H05K2201/096 , H05K2201/09618 , H05K2201/09727 , H05K2201/09972 , H01L2924/00
摘要： A multilayer wiring board 100 comprises a first wiring region 101 where wirings 103a and insulating layers 104a and 104b are alternately laminated, and a second wiring region 102 where a thickness H2 of an insulating layer 104 is twice or more a thickness H1 of the insulating layer in the first wiring region 101 and a width W2 of a wiring 103b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.
摘要翻译：多层布线基板100包括：布线103a和绝缘层104a，104b交替层叠的第一布线区域101和绝缘层104的厚度H2为绝缘层的厚度H1的两倍以上的第二布线区域102 在第一布线区域101中，布线103b的宽度W2是第一布线区域101中的布线的宽度W1的两倍或更多倍。第一布线区域101和第二布线区域102一体地形成在同一个板上。

49. 发明申请

US20110069358A1 SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：US20110069358A1
公开(公告)日：2011-03-24
申请号：US12958817
申请日：2010-12-02
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H04N1/04
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

50. 发明授权

US07864384B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07864384B2
公开(公告)日：2011-01-04
申请号：US12264972
申请日：2008-11-05
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H04N1/04
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要翻译：为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

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