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41. 发明授权

US08317934B2 Multi-stage substrate cleaning method and apparatus 有权
标题翻译：多级基板清洗方法及装置
公开(公告)号：US08317934B2
公开(公告)日：2012-11-27
申请号：US12465594
申请日：2009-05-13
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B5/04 , B08B3/00 , B08B7/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

42. 发明申请

US20120138098A1 SYSTEM, METHOD AND APPARATUS FOR MAINTAINING SEPARATION OF LIQUIDS IN A CONTROLLED MENISCUS 有权
标题翻译：用于维持控制菜单中液体分离的系统，方法和装置
公开(公告)号：US20120138098A1
公开(公告)日：2012-06-07
申请号：US13370119
申请日：2012-02-09
申请人： Robert O'Donnell , Cheng-Yu (Sean) Lin , Arnold Kholodenko
发明人： Robert O'Donnell , Cheng-Yu (Sean) Lin , Arnold Kholodenko
IPC分类号： B08B3/04 , B08B7/04
CPC分类号： B08B3/04 , H01L21/67034 , H01L21/67051
摘要： A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete holes connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.
摘要翻译：形成和使用邻近头的系统和方法。邻近头包括头表面，其包括第一区域，第二区域和内部返回区域。所述第一区域包括第一平面区域和连接到对应的第一导管并且布置在第一排中的多个第一离散孔。所述第二区域包括连接到相应的第二导管的第二平坦区域和多个第二离散孔。所述内部返回区域设置在所述第一区域和所述第二区域之间并且邻近所述第二区域并且包括连接到相应的内部返回管道并布置在内部返回行中的多个内部返回离散孔。第一行和内部返回行是平行的。每个内部返回离散孔的边缘的一部分凹入头部表面。

43. 发明授权

US07743730B2 Apparatus for an optimized plasma chamber grounded electrode assembly 有权
标题翻译：用于优化等离子体室接地电极组件的装置
公开(公告)号：US07743730B2
公开(公告)日：2010-06-29
申请号：US11316054
申请日：2005-12-21
申请人： Arnold Kholodenko , Anwar Husain
发明人： Arnold Kholodenko , Anwar Husain
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32532 , H01J37/32055 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32458 , H01J37/32559 , H01J37/32577 , H01J37/32651 , H01J37/32724 , H01L21/67069
摘要： An electrode assembly configured to provide a ground path for a plasma processing chamber of a plasma processing system is disclosed. The apparatus includes an electrode configured to be exposed to a plasma. The apparatus also includes a heater plate disposed above the electrode, wherein the heater plate is configured to heat the electrode. The apparatus further includes a cooling plate disposed above the heater plate, wherein the cooling plate is configured to cool the electrode. The apparatus also includes a plasma chamber lid configured to confine the plasma in the plasma chamber, wherein the plasma chamber lid includes a ground. The apparatus further includes a clamp ring configured to secure the electrode, the heater plate, and the cooling plate to the plasma chamber lid, the clamp ring is further configured to provide the ground path from the electrode to the chamber lid.
摘要翻译：公开了一种构造成为等离子体处理系统的等离子体处理室提供接地路径的电极组件。该装置包括被配置为暴露于等离子体的电极。该设备还包括设置在电极上方的加热板，其中加热板被配置为加热电极。该装置还包括设置在加热板上方的冷却板，其中冷却板构造成冷却电极。所述装置还包括构造成将等离子体限制在等离子体室中的等离子体室盖，其中等离子体室盖包括地面。该装置还包括夹紧环，其构造成将电极，加热器板和冷却板固定到等离子体室盖上，夹紧环进一步构造成提供从电极到室盖的接地路径。

44. 发明授权

US07699634B2 High power electrical connector for a laminated heater 有权
标题翻译：用于层压加热器的大功率电气连接器
公开(公告)号：US07699634B2
公开(公告)日：2010-04-20
申请号：US11687344
申请日：2007-03-16
申请人： Arnold Kholodenko , Russell Martin , John Rasnick , Christopher Kimball
发明人： Arnold Kholodenko , Russell Martin , John Rasnick , Christopher Kimball
IPC分类号： H01R13/52
CPC分类号： H05B3/06
摘要： An electrical connector has a non-conductive outer housing and a spring-loaded conductive assembly mounted within. The non-conductive outer housing has a longitudinal axis along which the spring-loaded conductive assembly is allowed to move over a limited range, in either direction. The conductive assembly includes a conductive contact pad and an conductive elongated shaft which are mated together within the non-conductive outer housing. A spring mounted along the contact shaft and in abutment therewith biases the contact shaft in a direction away from the contact base. When the electrical connector is employed in a chamber lid of a chamber lid assembly having an integrated laminated heater, such as for use in conjunction with a wafer processing chamber, the spring biases a lower surface of the contact shaft against the heater.
摘要翻译：电连接器具有非导电外壳和安装在其内的弹簧加载导电组件。非导电外壳具有纵向轴线，弹簧加载的导电组件沿着该纵向轴线可在任一方向上在有限的范围内移动。导电组件包括导电接触垫和导电细长轴，其在非导电外壳内配合在一起。沿着接触轴安装并抵靠的弹簧沿远离接触基座的方向偏压接触轴。当电连接器用于具有集成层压加热器的室盖组件的室盖中时，诸如与晶片处理室结合使用时，弹簧将接触轴的下表面偏置抵靠加热器。

45. 发明申请

US20100037922A1 APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS 有权
标题翻译：装置用于通过曼尼斯卡处理WAFER表面的临时头部的大体均匀流体流量
公开(公告)号：US20100037922A1
公开(公告)日：2010-02-18
申请号：US12367515
申请日：2009-02-07
申请人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Russell Martin
发明人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Russell Martin
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , Y10S134/902 , Y10T29/49826
摘要： Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.
摘要翻译：提供流体流入邻近头部的调节流体输送到晶片表面。连接到多个向下流动孔的上部气室由主孔提供。向下流动孔将流体提供到上部通风室中，并且电阻器孔连接到上部增压室。电阻器孔接收具有形状以阻止流体流过电阻器孔的电阻器。连接到电阻器孔的下部增压室被配置为从电阻器孔接收流体，由电阻器限制，以流向在下部增压室和头部表面的表面之间延伸的多个出口端口。流过上部通风室的流体，具有电阻器和下部增压室的电阻器孔基本上被调节以限定跨过接近头部宽度的多个出口端口的基本均匀的流体流出。

46. 发明申请

US20090320942A1 SINGLE SUBSTRATE PROCESSING HEAD FOR PARTICLE REMOVAL USING LOW VISCOSITY FLUID 有权
标题翻译：使用低粘度流体进行颗粒去除的单基板加工头
公开(公告)号：US20090320942A1
公开(公告)日：2009-12-31
申请号：US12165577
申请日：2008-06-30
申请人： Arnold Kholodenko , Cheng-yu Lin , Leon Ginzburg , Mark Mandelboym , Gregory A. Tomasch , Anwar Husain
发明人： Arnold Kholodenko , Cheng-yu Lin , Leon Ginzburg , Mark Mandelboym , Gregory A. Tomasch , Anwar Husain
IPC分类号： F16L41/00
CPC分类号： H01L21/67023 , H01L21/67051 , H01L21/67173 , H01L21/67748 , Y10T137/85938
摘要： A head for dispensing a thin film over a substrate is disclosed. The head includes a body assembly that extends between a first and a second end that is at least a width of the substrate. The body includes a main bore that is defined between the first and the second ends, the main bore connected to an upper side of a reservoir through a plurality of feeds that are defined between the main bore and the reservoir. The body also includes a plurality of outlets connected to a lower side of the reservoir and extend to an output slot. The plurality of feeds have a larger cross-sectional area than the plurality of outlets and the plurality of feeds are fewer than the plurality of outlets. Wherein fluid is configured to flow through the main bore, through the plurality of feeds along the bore and fill the reservoir up to at least the threshold level before fluid is evenly output as a film out of the output slot onto the substrate.
摘要翻译：公开了一种用于在衬底上分配薄膜的头部。头部包括主体组件，其在至少基板的宽度的第一端和第二端之间延伸。主体包括限定在第一和第二端之间的主孔，主孔通过限定在主孔和储存器之间的多个进料连接到储存器的上侧。主体还包括连接到储存器的下侧并延伸到输出槽的多个出口。多个进料具有比多个出口更大的横截面积，并且多个进料少于多个出口。其中流体构造成流过主孔，通过沿着孔的多个进料，并且在流体均匀地输出为输出槽之外的流体到基板上之前将储存器填充到至少阈值水平。

47. 发明申请

US20090159201A1 METHODS OF CONFIGURING A PROXIMITY HEAD THAT PROVIDES UNIFORM FLUID FLOW RELATIVE TO A WAFER 有权
标题翻译：配置相对于WAFER的均匀流体流量的临近头的方法
公开(公告)号：US20090159201A1
公开(公告)日：2009-06-25
申请号：US12340394
申请日：2008-12-19
申请人： Arnold Kholodenko , Cheng-Yu (Sean) Lin
发明人： Arnold Kholodenko , Cheng-Yu (Sean) Lin
IPC分类号： B29C65/02
CPC分类号： H01L21/02057 , B29C65/20 , B29C66/54 , B29K2027/12 , B29K2027/16 , H01L21/67051 , Y10T29/49087 , Y10T137/85938
摘要： Methods configure a proximity head for conditioning fluid flow relative to a proximity head in processing of a surface of a wafer by a meniscus. The methods configure the head in one piece while maintaining head rigidity even as the head is lengthened for cleaning of large diameter wafers. The one-piece head configuring separates main fluid flows from separate flows of fluid relative to the wafer surface, with the separation being by a high resistance fluid flow configuration, resulting in substantially uniform fluid flows across increased lengths of the head in a unit for either fluid supply or return.
摘要翻译：在弯液面处理晶片表面时，方法配置邻近头用于调节相对于邻近头的流体流动。这种方法将头部配置成一体，同时保持头部刚度，即使头部被延长以清洁大直径晶片。一体式头部构造将主要流体流从单独的流体流相对于晶片表面分离，分离是由高阻力流体流动构造，导致基本上均匀的流体流过头部的增加的长度，流体供应或返回。

48. 发明授权

US06908540B2 Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process 失效
标题翻译：在电化学沉积工艺期间封装衬底边缘的方法和装置
公开(公告)号：US06908540B2
公开(公告)日：2005-06-21
申请号：US09905513
申请日：2001-07-13
申请人： Arnold Kholodenko
发明人： Arnold Kholodenko
IPC分类号： C25D7/12 , C25D17/06 , H01L21/00 , C25D5/02
CPC分类号： H01L21/67126 , C25D7/12 , C25D17/004 , C25D17/06
摘要： An electro-chemical deposition method and apparatus that encapsulates a substrate's edge to prevent deposition thereon is generally provided. In one embodiment, the apparatus includes a contact ring, one or more electrical contact pads disposed on the contact ring and a thrust plate axially movable relative to the contact ring. A first seal is disposed inward of the contact pad and seals with the contact ring. A second seal is coupled to the thrust plate. The first and second seals are adapted to sandwich the substrate therebetween when the contact ring and the thrust plate are moved towards each other. In another embodiment, a third seal provides a seal between the thrust plate and contact ring, and, with the first and second seals, defines an exclusion zone encapsulating the substrate's edge. One or more electrical contact pads are protected from the electrolyte by being disposed within the exclusion zone.
摘要翻译：通常提供封装基板边缘以防止其上沉积的电化学沉积方法和装置。在一个实施例中，该装置包括接触环，设置在接触环上的一个或多个电接触垫和相对于接触环可轴向移动的止推板。第一密封件设置在接触垫的内侧并与接触环密封。第二密封件联接到推力板。当接触环和止推板彼此移动时，第一和第二密封件适于将基板夹在其间。在另一个实施例中，第三密封件在推力板和接触环之间提供密封，并且与第一和第二密封件一起限定封装衬底边缘的排除区域。一个或多个电接触垫通过设置在排除区内而被保护免于电解质。

49. 发明授权

US06189484B1 Plasma reactor having a helicon wave high density plasma source 失效
标题翻译：具有螺旋波高密度等离子体源的等离子体反应器
公开(公告)号：US06189484B1
公开(公告)日：2001-02-20
申请号：US09263642
申请日：1999-03-05
申请人： Gerald Zheyao Yin , Chii Guang Lee , Arnold Kholodenko , Peter K. Loewenhardt , Hongching Shan , Diana Xiaobing Ma , Dan Katz
发明人： Gerald Zheyao Yin , Chii Guang Lee , Arnold Kholodenko , Peter K. Loewenhardt , Hongching Shan , Diana Xiaobing Ma , Dan Katz
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32678
摘要： A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.
摘要翻译：具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。反应器可以利用温度控制系统来维持室的表面上恒定的温度。

50. 发明授权

US6033478A Wafer support with improved temperature control 失效
标题翻译：晶圆支架采用改进的温度控制
公开(公告)号：US6033478A
公开(公告)日：2000-03-07
申请号：US730123
申请日：1996-11-05
申请人： Arnold Kholodenko
发明人： Arnold Kholodenko
IPC分类号： B23Q3/15 , H01L21/683 , C23C16/00 , C23C14/00
CPC分类号： H01L21/6831 , Y10T279/23
摘要： Apparatus for supporting a workpiece. The apparatus has either a mechanical or electrostatic chuck having a workpiece support surface that specifically directs the flow of a heat transfer gas from at least one gas supply port towards a drain port. A pressure valve beyond the drain port regulates heat transfer gas pressure to ensure adequate gas density for cooling by conduction and adequate gas flow for controlled leakage through the valve.
摘要翻译：用于支撑工件的装置。该设备具有机械或静电卡盘，其具有工件支撑表面，其特别地将来自至少一个气体供给端口的传热气体的流动引导到排出端口。超出排水口的压力阀调节传热气体压力，以确保足够的气体密度，以通过传导和足够的气流进行冷却，从而通过阀门进行控制泄漏。

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