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41. 发明授权

US06340582B1 Process for preparing xylitol 失效
标题翻译：制备木糖醇的方法
公开(公告)号：US06340582B1
公开(公告)日：2002-01-22
申请号：US09509543
申请日：2000-04-11
申请人： Shunichi Suzuki , Masakazu Sugiyama , Maiko Mori , Yasuhiro Mihara , Kenzo Yokozeki
发明人： Shunichi Suzuki , Masakazu Sugiyama , Maiko Mori , Yasuhiro Mihara , Kenzo Yokozeki
IPC分类号： C12P718
CPC分类号： C12P7/18 , Y10S435/822 , Y10S435/823
摘要： A method for producing xylitol by allowing a microorganism belonging to the Gluconobacter oxydans or Acetobacter xylinum and having a D-arabitol dehydrogenase activity and a D-xylulose reductase (xylitol dehydrogenase) activity and an ability to convert D-arabitol to xylitol is acted on D-arabitol in a reaction mixture containing a carbon source to produce xylitol.
摘要翻译：通过使属于氧化葡糖杆菌或木醋杆菌的具有D-阿拉伯糖脱氢酶活性和D-木酮糖还原酶（木糖醇脱氢酶）活性和将D-阿拉伯糖醇转化为木糖醇的能力的微生物生产木糖醇的方法作用于D - 阿糖醇在含有碳源的反应混合物中以产生木糖醇。

42. 发明授权

US06320724B1 Floppy disk drive unit with contact preventing mechanism 失效
标题翻译：带接触防止机构的软盘驱动单元
公开(公告)号：US06320724B1
公开(公告)日：2001-11-20
申请号：US09321722
申请日：1999-05-28
申请人： Shunichi Suzuki
发明人： Shunichi Suzuki
IPC分类号： G11B1704
CPC分类号： G11B17/0434 , G11B5/40
摘要： To provide a floppy disk drive unit in which a magnetic head is prevented from being broken. This floppy disk drive unit 1 includes an upper magnetic head 10a and a lower magnetic head 10b which have the respective sliding faces opposite to each other, a cassette support 4 for supporting a floppy disk 3 opposite to the magnetic heads 10a, 10b, and a contact preventing element 19 for preventing breakage of the magnetic head 10b. The contact preventing element 19 has a first stopper part 19b for inhibiting the downward movement of the cassette support 4 to prevent its contact with the magnetic head. By this arrangement, even if impact is applied from the outside to the floppy disk drive unit so that the cassette support 4 is bent and descended, the cassette support 4 is supported from below by the first stopper part 19b so as to prevent the magnetic head 10b from being damaged.
摘要翻译：提供防止磁头破损的软盘驱动单元。该软盘驱动单元1包括具有彼此相对的相应滑动面的上磁头10a和下磁头10b，用于支撑与磁头10a，10b相对的软盘3的磁带盒支架4和接触防止元件19，用于防止磁头10b的破坏。接触防止元件19具有用于抑制盒支撑件4的向下移动以防止其与磁头接触的第一止动部19b。通过这种布置，即使从外部向软盘驱动单元施加冲击，使得盒支撑件4弯曲和下降，盒支撑件4由第一止动部分19b从下方支撑，以防止磁头 10b被损坏。

43. 发明授权

US4706107A IC memory cells with reduced alpha particle influence 失效
标题翻译：具有降低的α粒子影响的IC记忆体
公开(公告)号：US4706107A
公开(公告)日：1987-11-10
申请号：US830919
申请日：1986-02-20
申请人： Kazuo Terada , Susumu Kurosawa , Shunichi Suzuki
发明人： Kazuo Terada , Susumu Kurosawa , Shunichi Suzuki
IPC分类号： G11C11/404 , G11C11/4074 , H01L27/092 , H01L27/108 , H01L29/78
CPC分类号： H01L29/7841 , G11C11/404 , G11C11/4074 , H01L27/092 , H01L27/108
摘要： A semiconductor memory device has a semiconductor substrate with a first semiconductor region of one conductivity type in the substrate. A second semiconductor region of the opposite conductivity type is formed in the first semiconductor region. A third semiconductor region of the opposite conductivity type is arranged to be in contact with the first semiconductor region. A fourth semiconductor region of the one conductivity type is formed in the third semiconductor region. A fifth semiconductor region of the one conductivity type, within the semiconductor substrate, has a concentration which is higher than the impurity concentration of the first semiconductor region and is provided under the third semiconductor region. A continuous gate electrode is provided via a gate insulating layer formed on the surface of the first semiconductor region and on the surface of the third semiconductor region. The first, second and third semiconductor regions and the gate electrode form a first insulated-gate field effect transistor. The second, third and fourth semiconductor regions and the gate electrode serving as a second insulated-gate field effect transistor.
摘要翻译：半导体存储器件具有在衬底中具有一种导电类型的第一半导体区域的半导体衬底。在第一半导体区域中形成相反导电类型的第二半导体区域。相反导电类型的第三半导体区域布置成与第一半导体区域接触。在第三半导体区域中形成一种导电类型的第四半导体区域。半导体衬底内的一种导电类型的第五半导体区域具有比第一半导体区域的杂质浓度高的浓度，并且设置在第三半导体区域的下方。通过形成在第一半导体区域的表面上和第三半导体区域的表面上的栅极绝缘层提供连续的栅电极。第一，第二和第三半导体区域和栅电极形成第一绝缘栅场效应晶体管。第二，第三和第四半导体区域和用作第二绝缘栅场效应晶体管的栅电极。

44. 发明授权

US08785942B2 Nitride semiconductor substrate and method of manufacturing the same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US08785942B2
公开(公告)日：2014-07-22
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/15
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

45. 发明授权

US08172959B2 Austenitic stainless steel, manufacturing method for the same, and structure using the same 有权
标题翻译：奥氏体不锈钢，制造方法相同，其结构采用相同
公开(公告)号：US08172959B2
公开(公告)日：2012-05-08
申请号：US10585885
申请日：2005-01-13
申请人： Yasuhiro Sakaguchi , Toshihiko Iwamura , Hiroshi Kanasaki , Hidehito Mimaki , Masaki Taneike , Shunichi Suzuki , Kenrou Takamori , Suguru Ooki , Naoki Anahara , Naoki Hiranuma , Toshio Yonezawa
发明人： Yasuhiro Sakaguchi , Toshihiko Iwamura , Hiroshi Kanasaki , Hidehito Mimaki , Masaki Taneike , Shunichi Suzuki , Kenrou Takamori , Suguru Ooki , Naoki Anahara , Naoki Hiranuma , Toshio Yonezawa
IPC分类号： C22C38/44 , C21D8/10 , C21D9/08
CPC分类号： C21D6/002 , C21D6/001 , C21D6/004 , C21D6/02 , C21D7/02 , C21D2211/001 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/44 , Y10S376/90 , Y10T428/13
摘要： There are provided an austenitic stainless steel having high stress corrosion crack resistance, characterized by containing, in percent by weight, 0.030% or less C, 0.1% or less Si, 2.0% or less Mn, 0.03% or less P, 0.002% or less S, 11 to 26% Ni, 17 to 30% Cr, 3% or less Mo, and 0.01% or less N, the balance substantially being Fe and unavoidable impurities; a manufacturing method for an austenitic stainless steel, characterized in that a billet consisting of the said austenitic stainless steel is subjected to solution heat treatment at a temperature of 1000 to 1150° C.; and a pipe and a in-furnace structure for a nuclear reactor to which the said austenitic stainless steel is applied.
摘要翻译：提供了具有高应力腐蚀开裂性的奥氏体不锈钢，其特征在于，以重量％计含有C：0.1％以下，C：0.1％以下，2.0％以下的Mn，0.03％以下的P，0.002％以下较少的S，11〜26％的Ni，17〜30％的Cr，3％以下的Mo和0.01％以下的N，余量基本上是Fe和不可避免的杂质; 一种奥氏体不锈钢的制造方法，其特征在于，将由所述奥氏体不锈钢构成的坯料在1000〜1150℃的温度下进行固溶热处理。以及用于所述奥氏体不锈钢的核反应堆的管和炉内结构。

46. 发明申请

US20110062556A1 COMPOUND SEMICONDUCTOR SUBSTRATE 有权
标题翻译：化合物半导体基板
公开(公告)号：US20110062556A1
公开(公告)日：2011-03-17
申请号：US12879035
申请日：2010-09-10
申请人： Jun KOMIYAMA , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Jun KOMIYAMA , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02507
摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
摘要翻译：一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5）交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和Al y Ga 1-y N单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。以这种方式制造化合物半导体衬底。

47. 发明授权

US07858348B2 N-acetyl-(R,S)-beta-amino acid acylase gene 有权
标题翻译： N-乙酰基 - （R，S） - 氨基酸酰基转移酶基因
公开(公告)号：US07858348B2
公开(公告)日：2010-12-28
申请号：US11782260
申请日：2007-07-24
申请人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
发明人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
IPC分类号： C12P13/04
CPC分类号： C12N9/80
摘要： The present invention provides genes that encode the N-acetyl-(R,S)-β-amino acid acylases. The N-acetyl-(R,S)-β-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-β-amino acid acylase produced by Variovorax sp. AJ110348 (FERM BP-10367) includes, for example, the protein comprised of the amino acid sequence shown in SEQ. ID. NO. 12. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 11.
摘要翻译：本发明提供编码N-乙酰基 - （R，S） - 氨基酸酰基转移酶的基因。从细菌细胞中分离纯化N-乙酰基 - （R，S） - 氨基酸酰基转移酶，测定核苷酸序列。宿主如大肠杆菌用于构建这些基因的高表达系统。由伯克霍尔德氏菌属（Burkholderia sp。）生产的N-乙酰基 - （R） - AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。由伯克霍尔德氏菌属（Burkholderia sp。）生产的N-乙酰基 - （S） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 9.由Variovorax sp。生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110348（FERM BP-10367）包括例如由SEQ ID NO：1所示的氨基酸序列组成的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 11。

48. 发明申请

US20080308198A1 Austenitic Stainless Steel, Manufacturing Method for the Same, and Structure Using the Same 有权
标题翻译：奥氏体不锈钢，其制造方法和使用其的结构
公开(公告)号：US20080308198A1
公开(公告)日：2008-12-18
申请号：US10585885
申请日：2005-01-13
申请人： Yasuhiro Sakaguchi , Toshihiko Iwamura , Hiroshi Kanasaki , Hidehito Mimaki , Masaki Taneike , Shunichi Suzuki , Kenrou Takamori , Suguru Ooki , Naoki Anahara , Naoki Hiranuma , Toshio Yonezawa
发明人： Yasuhiro Sakaguchi , Toshihiko Iwamura , Hiroshi Kanasaki , Hidehito Mimaki , Masaki Taneike , Shunichi Suzuki , Kenrou Takamori , Suguru Ooki , Naoki Anahara , Naoki Hiranuma , Toshio Yonezawa
IPC分类号： C21D8/00 , C22C38/44 , C22C38/58 , B32B1/02 , C21D1/00
CPC分类号： C21D6/002 , C21D6/001 , C21D6/004 , C21D6/02 , C21D7/02 , C21D2211/001 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/44 , Y10S376/90 , Y10T428/13
摘要： There are provided an austenitic stainless steel having high stress corrosion crack resistance, characterized by containing, in percent by weight, 0.030% or less C, 0.1% or less Si, 2.0% or less Mn, 0.03% or less P, 0.002% or less S, 11 to 26% Ni, 17 to 30% Cr, 3% or less Mo, and 0.01% or less N, the balance substantially being Fe and unavoidable impurities; a manufacturing method for an austenitic stainless steel, characterized in that a billet consisting of the said austenitic stainless steel is subjected to solution heat treatment at a temperature of 1000 to 1150° C.; and a pipe and a in-furnace structure for a nuclear reactor to which the said austenitic stainless steel is applied.
摘要翻译：提供了具有高应力腐蚀开裂性的奥氏体不锈钢，其特征在于，以重量％计含有C：0.1％以下，C：0.1％以下，2.0％以下的Mn，0.03％以下的P，0.002％以下较少的S，11〜26％的Ni，17〜30％的Cr，3％以下的Mo和0.01％以下的N，余量基本上是Fe和不可避免的杂质; 一种奥氏体不锈钢的制造方法，其特征在于，将由所述奥氏体不锈钢构成的钢坯在1000〜1150℃的温度下进行固溶热处理。以及用于所述奥氏体不锈钢的核反应堆的管和炉内结构。

49. 发明申请

US20080241895A1 N-Acetyl-(R,S)-beta-Amino Acid Acylase Gene 有权
标题翻译： N-乙酰基 - （R，S） - 氨基酸酰基酶
公开(公告)号：US20080241895A1
公开(公告)日：2008-10-02
申请号：US11782260
申请日：2007-07-24
申请人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
发明人： Shunichi Suzuki , Yuki Imabayashi , Kunihiko Watanabe , Hisashi Kawasaki , Tsuyoshi Nakamatsu
IPC分类号： C12P13/04 , C07H21/04 , C12N9/80 , C12N1/21
CPC分类号： C12N9/80
摘要： The present invention provides genes that encode the N-acetyl-(R,S)-β-amino acid acylases. The N-acetyl-(R,S)-β-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-β-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-β-amino acid acylase produced by Variovorax sp. AJ110348 (FERM BP-10367) includes, for example, the protein comprised of the amino acid sequence shown in SEQ. ID. NO. 12. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 11.
摘要翻译：本发明提供编码N-乙酰基 - （R，S） - 氨基酸酰基转移酶的基因。从细菌细胞中分离纯化N-乙酰基 - （R，S） - 氨基酸酰基转移酶，确定核苷酸序列。宿主如大肠杆菌用于构建这些基因的高表达系统。伯克霍尔德氏菌属生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。由伯克霍尔德氏菌属生产的N-乙酰基 - （S） - 氨基酸酰基转移酶 AJ110349（FERM BP-10366）包括例如具有SEQ ID NO：1所示氨基酸序列的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 9.由Variovorax sp。生产的N-乙酰基 - （R） - 氨基酸酰基转移酶 AJ110348（FERM BP-10367）包括例如由SEQ ID NO：1所示的氨基酸序列组成的蛋白质。 ID。没有。编码该酶的基因包括例如具有SEQ ID NO：1所示核苷酸序列的DNA。 ID。没有。 11。

50. 发明申请

US20070190602A1 Mutant protein having the peptide-synthesizing activity 审中-公开
标题翻译：具有肽合成活性的突变蛋白
公开(公告)号：US20070190602A1
公开(公告)日：2007-08-16
申请号：US11316926
申请日：2005-12-27
申请人： Isao Abe , Rie Takeshita , Seiichi Hara , Sonoko Suzuki , Kenzo Yokozeki , Masakazu Sugiyama , Shunichi Suzuki , Kunihiko Watanabe , Nobuhisa Shimba , Takefumi Nakamura , Uno Tagami , Yuya Kodama , Hiromi Onoye , Reiko Yuuji , Eiichiro Suzuki , Tatsuki Kashiwagi , Ningchun Xu , Yuko Kai
发明人： Isao Abe , Rie Takeshita , Seiichi Hara , Sonoko Suzuki , Kenzo Yokozeki , Masakazu Sugiyama , Shunichi Suzuki , Kunihiko Watanabe , Nobuhisa Shimba , Takefumi Nakamura , Uno Tagami , Yuya Kodama , Hiromi Onoye , Reiko Yuuji , Eiichiro Suzuki , Tatsuki Kashiwagi , Ningchun Xu , Yuko Kai
IPC分类号： G06F19/00 , C07H21/04 , C12P21/06 , C12N9/64
CPC分类号： C12N9/93
摘要： The present invention aims at providing an excellent peptide-synthesizing protein and a method for efficiently producing a peptide. The peptide is synthesized by reacting an amine component and a carboxy component in the presence of at least one of proteins shown in the following (I) and (II).(I) The mutant protein having an amino acid sequence comprising one or more mutations from any of the mutations 1 to 68, and the mutations 239 to 290 and 324 to 377 in an amino acid sequence of SEQ ID NO:2.(II) The mutant protein having an amino acid sequence comprising one or more mutations from any of the mutations L1 to L335 and M1 to M642 in an amino acid sequence of SEQ ID NO:208
摘要翻译：本发明的目的在于提供优异的肽合成蛋白质和有效生产肽的方法。在下列（I）和（II）所示的至少一种蛋白质存在下，使胺组分和羧基组分反应合成肽。（I）具有包含SEQ ID NO：2的氨基酸序列中的任何突变1至68和突变239至290和324至377的一个或多个突变的氨基酸序列的突变蛋白。（II）具有包含SEQ ID NO：208的氨基酸序列中的任何突变L1至L335和M1至M642的一个或多个突变的氨基酸序列的突变蛋白

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