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    • 1. 发明授权
    • IC memory cells with reduced alpha particle influence
    • 具有降低的α粒子影响的IC记忆体
    • US4706107A
    • 1987-11-10
    • US830919
    • 1986-02-20
    • Kazuo TeradaSusumu KurosawaShunichi Suzuki
    • Kazuo TeradaSusumu KurosawaShunichi Suzuki
    • G11C11/404G11C11/4074H01L27/092H01L27/108H01L29/78
    • H01L29/7841G11C11/404G11C11/4074H01L27/092H01L27/108
    • A semiconductor memory device has a semiconductor substrate with a first semiconductor region of one conductivity type in the substrate. A second semiconductor region of the opposite conductivity type is formed in the first semiconductor region. A third semiconductor region of the opposite conductivity type is arranged to be in contact with the first semiconductor region. A fourth semiconductor region of the one conductivity type is formed in the third semiconductor region. A fifth semiconductor region of the one conductivity type, within the semiconductor substrate, has a concentration which is higher than the impurity concentration of the first semiconductor region and is provided under the third semiconductor region. A continuous gate electrode is provided via a gate insulating layer formed on the surface of the first semiconductor region and on the surface of the third semiconductor region. The first, second and third semiconductor regions and the gate electrode form a first insulated-gate field effect transistor. The second, third and fourth semiconductor regions and the gate electrode serving as a second insulated-gate field effect transistor.
    • 半导体存储器件具有在衬底中具有一种导电类型的第一半导体区域的半导体衬底。 在第一半导体区域中形成相反导电类型的第二半导体区域。 相反导电类型的第三半导体区域布置成与第一半导体区域接触。 在第三半导体区域中形成一种导电类型的第四半导体区域。 半导体衬底内的一种导电类型的第五半导体区域具有比第一半导体区域的杂质浓度高的浓度,并且设置在第三半导体区域的下方。 通过形成在第一半导体区域的表面上和第三半导体区域的表面上的栅极绝缘层提供连续的栅电极。 第一,第二和第三半导体区域和栅电极形成第一绝缘栅场效应晶体管。 第二,第三和第四半导体区域和用作第二绝缘栅场效应晶体管的栅电极。
    • 7. 发明授权
    • Semiconductor wafer and its manufacturing method
    • 半导体晶片及其制造方法
    • US06936490B2
    • 2005-08-30
    • US10432597
    • 2002-09-05
    • Yoshihisa AbeShunichi SuzukiHideo NakanishiKazutaka TerashimaJun Komiyama
    • Yoshihisa AbeShunichi SuzukiHideo NakanishiKazutaka TerashimaJun Komiyama
    • C30B25/02H01L21/04H01L21/00
    • C30B25/02C30B29/36C30B29/406H01L21/0445
    • A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
    • 一种在Si衬底上外延生长SiC膜的方法,包括:(a)在Si衬底上提供含有P(磷)元素的气体和具有B(硼)元素的气体的原料气体,从而合成 在Si衬底上具有5nm以上且100nm以下的厚度的无定形BP薄膜; (b)在Si衬底上进一步供给包含具有P元素的气体和具有B元素的气体的原料气体,由此合成厚度为5nm以上且1000nm以下的立方晶磷化硼单晶膜, Si衬底; 和(c)在Si衬底上提供具有碳元素的气体和具有硅元素的气体,形成BP单晶膜,从而合成厚度为1nm的β-SiC单晶膜或非晶SiC膜 或更多和几百纳米或更少的Si基板上的立方硼化磷单晶膜。
    • 10. 发明授权
    • Bacillus-derived transglutaminase
    • 芽孢杆菌衍生的转谷氨酰胺酶
    • US5731183A
    • 1998-03-24
    • US596864
    • 1996-02-09
    • Katsunori KobayashiShigeru YamanakaKiyoshi MiwaShunichi SuzukiYuzuru EtoYuko TanitaKenzo YokozekiKenichi Hashiguchi
    • Katsunori KobayashiShigeru YamanakaKiyoshi MiwaShunichi SuzukiYuzuru EtoYuko TanitaKenzo YokozekiKenichi Hashiguchi
    • C12N15/09A23J3/00C12N1/15C12N1/19C12N1/21C12N5/10C12N9/10C12N15/54C12P21/04C12R1/125C12R1/19
    • C12N9/1044Y10S435/839
    • The present invention relates to (1) a transglutaminase (hereinafter referred to as TG) isolated from a Bacilli such as those of Bacillus subtilis, (2) a fraction having transglutaminase activity, and (3) a method for producing a protein, a non-proteinaceous amino acid polymer, a peptide or derivatives thereof having a crosslinked structure, by crosslinking the glutamine and lysine residues in the same with the TG or the fraction having TG activity to thereby form intermolecular or intramolecular, crosslinked .epsilon.-(.gamma.-Glu)-Lys bonds. The present invention also relates to (4) a DNA coding for a TG derived from a Bacilli such as Bacillus subtilis, (5) a vector comprising said DNA coding for the TG, (6) a cell transformed with the vector, and (7) a method for producing a Bacillus-derived transglutaminase by incubating the transformant. The crosslinked polymers produced using the Bacillus-derived TG of the present invention can be used in foods such as tofu (soybean curd), pudding, yogurt, cheese, ground fish meat, boiled fish paste, sausage and other fish and meat products and also in cosmetics, etc.
    • 本发明涉及(1)从枯草芽孢杆菌等芽孢分离的转谷氨酰胺酶(以下称为TG),(2)具有转谷氨酰胺酶活性的级分,(3)蛋白质的制造方法, 蛋白质氨基酸聚合物,具有交联结构的肽或其衍生物,通过与TG或具有TG活性的级分交联谷氨酰胺和赖氨酸残基,从而形成分子间或分子内交联的ε-(γ-Glu) -Lys债券。 本发明还涉及(4)编码来自芽孢杆菌如枯草芽孢杆菌的TG的DNA,(5)包含编码TG的所述DNA的载体,(6)用载体转化的细胞和(7 )通过温育转化体来生产芽孢杆菌来源的转谷氨酰胺酶的方法。 使用本发明的芽孢杆菌来源的TG制备的交联聚合物可以用于诸如豆腐(豆腐),布丁,酸奶,奶酪,地面鱼肉,煮鱼酱,香肠和其他鱼和肉制品的食品中 化妆品等