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    • 44. 发明授权
    • Forming memory cells comprising impurity doping regions along edges of less than 1F spacing
    • 形成沿着小于1F间距的边缘的杂质掺杂区的存储单元
    • US08318569B2
    • 2012-11-27
    • US12627840
    • 2009-11-30
    • Tae-hee Lee
    • Tae-hee Lee
    • H01L21/336
    • H01L29/7841H01L27/108H01L27/10802
    • Provided are methods of forming a semiconductor device, the method including: forming an insulation region on a substrate region, and an active region on the insulation region; patterning the active region to form an active line pattern; forming a gate pattern to surround an upper portion and lateral portions of the active line pattern; separating the gate pattern into a plurality of sub-gate regions, and separating the active line pattern into a plurality of sub-active regions, in order to form a plurality of memory cells that are each formed of the sub-active region and the sub-gate region and that are separated from one another; and forming first and second impurity doping regions along both edges of the sub-active regions included in each of the plurality of the memory cells, wherein the forming of the first and second impurity doping regions comprises doping lateral portions of the sub-active regions via a space between the memory cells.
    • 提供形成半导体器件的方法,所述方法包括:在衬底区域上形成绝缘区域和在绝缘区域上形成有源区域; 图案化有源区域以形成有源线图案; 形成栅极图案以包围有源线图案的上部和侧部; 将栅极图案分离成多个子栅极区域,并将有源线图案分离成多个子有源区域,以便形成由子有源区域和子区域形成的多个存储单元 并且彼此分离; 以及沿着包括在所述多个所述存储单元中的每一个的所述子有源区域的两个边缘形成第一和第二杂质掺杂区域,其中所述第一和第二杂质掺杂区域的形成包括通过经由所述子有源区域的横向部分 存储单元之间的空间。