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41. 发明申请

US20100032010A1 METHOD TO MITIGATE SHUNT FORMATION IN A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA 审中-公开
标题翻译：减轻包含薄层玻璃的光电池的分裂形成的方法
公开(公告)号：US20100032010A1
公开(公告)日：2010-02-11
申请号：US12189156
申请日：2008-08-10
申请人： S. Brad Herner , Christopher J. Petti
发明人： S. Brad Herner , Christopher J. Petti
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/0475 , H01L31/0508 , H01L31/068 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell can be formed from a thin semiconductor lamina cleaved from a substantially crystalline wafer. Shunts may inadvertently be formed through such a lamina, compromising device performance. By physically severing the lamina into a plurality of segments, the segments of the lamina preferably electrically connected in series, loss of efficiency due to shunt formation may be substantially reduced. In some embodiments, adjacent laminae are connected in series into strings, and the strings are connected in parallel to compensate for the reduction in current caused by severing the lamina into segments.
摘要翻译：光伏电池可以由从基本上晶体的晶片切割的薄的半导体层形成。分流器可能无意中通过这样的层板形成，损害了设备性能。通过将层间物理切割成多个段，优选层叠电连接的层片段，可能显着减少由于分流形成而导致的效率损失。在一些实施例中，相邻薄片串联连接成串，并且串并联连接以补偿由层切割成片段而导致的电流减少。

42. 发明申请

US20100032007A1 PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA HAVING A REAR JUNCTION AND METHOD OF MAKING 有权
标题翻译：具有后结构的薄片的光电池和制造方法
公开(公告)号：US20100032007A1
公开(公告)日：2010-02-11
申请号：US12189158
申请日：2008-08-10
申请人： Mohamed M. Hilali , Christopher J. Petti
发明人： Mohamed M. Hilali , Christopher J. Petti
IPC分类号： H01L31/00
CPC分类号： H01L31/0248 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p−n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.
摘要翻译：在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。

43. 发明申请

US20100009488A1 METHOD TO FORM A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA 有权
标题翻译：形成包含薄层薄膜的光电池的方法
公开(公告)号：US20100009488A1
公开(公告)日：2010-01-14
申请号：US12499294
申请日：2009-07-08
申请人： Srinivasan Sivaram , Aditya Agarwal , S. Brad Herner , Christopher J. Petti
发明人： Srinivasan Sivaram , Aditya Agarwal , S. Brad Herner , Christopher J. Petti
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
摘要翻译：通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。离子注入限定了解理面，随后的步骤在切割平面处从晶片剥离薄层。光伏电池，或光伏电池的基极或发射极的全部或一部分形成在层内。在优选实施例中，在切割步骤之前将晶片固定到接收器。电接触可以形成在层的两个表面上，或仅形成在一个表面上。

44. 发明申请

US20090168507A1 Method of programming cross-point diode memory array 有权
标题翻译：交叉点二极管存储器阵列编程方法
公开(公告)号：US20090168507A1
公开(公告)日：2009-07-02
申请号：US12003571
申请日：2007-12-28
申请人： Christopher J. Petti
发明人： Christopher J. Petti
IPC分类号： G11C11/36
CPC分类号： G11C11/5692 , G11C13/00 , G11C13/0023 , G11C13/0069 , G11C17/16 , G11C17/165 , G11C2013/009 , G11C2213/33 , G11C2213/71 , G11C2213/72
摘要： A method of programming a nonvolatile memory array including a plurality of nonvolatile memory cells, a plurality of bit lines, and a plurality of word lines, wherein each memory cell comprises a diode, or a diode and a resistivity switching element is disclosed. The method includes both bias programming the memory cells of the device.
摘要翻译：一种编程包括多个非易失性存储单元，多个位线和多个字线的非易失性存储器阵列的方法，其中每个存储单元包括二极管，或二极管和电阻率开关元件。该方法包括对设备的存储器单元的偏置编程。

45. 发明授权

US07101764B2 High-voltage transistor and fabrication process 有权
公开(公告)号：US07101764B2
公开(公告)日：2006-09-05
申请号：US10247073
申请日：2002-09-18
申请人： Christopher J. Petti
发明人： Christopher J. Petti
IPC分类号： H01L21/336
CPC分类号： H01L29/0653 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L27/0922 , H01L29/66659 , H01L29/7835
摘要： A high-voltage transistor and fabrication process in which the fabrication of the high-voltage transistor can be readily integrated into a conventional CMOS fabrication process. The high-voltage transistor of the invention includes a channel region formed beneath a portion of the gate electrode after the gate electrode has been formed on the surface of a semiconductor substrate. In a preferred embodiment, the channel region is formed by the angled ion implantation of dopant atoms using an edge of the gate electrode as a doping mask. The high-voltage transistor of the invention further includes a drain region that is spaced apart from the channel region by a portion of a well region and by an isolation region residing in the semiconductor substrate. By utilizing the process of the invention to fabricate the high-voltage transistor, the transistor can be integrated into an existing CMOS device with minimal allocation of additional substrate surface area.

46. 发明申请

US20140030836A1 Silicon Carbide Lamina 失效
标题翻译：碳化硅薄片
公开(公告)号：US20140030836A1
公开(公告)日：2014-01-30
申请号：US13558843
申请日：2012-07-26
申请人： Venkatesan Murali , Steve Babayan , Christopher J. Petti
发明人： Venkatesan Murali , Steve Babayan , Christopher J. Petti
IPC分类号： H01L33/02 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/76254 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L33/007
摘要： A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.
摘要翻译：一种制造电子器件的方法包括提供碳化硅或类金刚石碳供体，并将离子注入施主体的第一表面以限定解理面。在注入之后，在第一表面上形成外延层，并且临时载体耦合到外延层。在切割平面处从供体体中切割薄层，并将临时载体从薄片上移除。在一些实施例中，从层板和外延层制造发光二极管或高电子迁移率晶体管。

47. 发明授权

US08518724B2 Method to form a device by constructing a support element on a thin semiconductor lamina 失效
标题翻译：通过在薄半导体层上构造支撑元件来形成器件的方法
公开(公告)号：US08518724B2
公开(公告)日：2013-08-27
申请号：US13450414
申请日：2012-04-18
申请人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
发明人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/1892 , H01L31/0747 , H01L31/1864 , Y02E10/50
摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.
摘要翻译：描述了半导体组件，其中在半导体层的表面上构造支撑元件。形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

48. 发明授权

US08349664B2 Nonvolatile memory cell comprising a diode and a resistance-switching material 有权
标题翻译：包括二极管和电阻切换材料的非易失性存储单元
公开(公告)号：US08349664B2
公开(公告)日：2013-01-08
申请号：US12855462
申请日：2010-08-12
申请人： Scott Brad Herner , Christopher J. Petti , Tanmay Kumar
发明人： Scott Brad Herner , Christopher J. Petti , Tanmay Kumar
IPC分类号： H01L21/82
CPC分类号： H01L27/249 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.
摘要翻译：在形成在衬底上方的新型非易失性存储单元中，二极管与可逆电阻切换材料配对，优选为金属氧化物或氮化物，例如NixOy，NbxOy，TixOy，HfxOy，AlxOy，MgxOy，CoxOy，CrxOy ，VxOy，ZnxOy，ZrxOy，BxNy和AlxNy。在优选实施例中，二极管形成为设置在导体之间的垂直支柱。可以堆叠多个存储器级别以形成单片三维存储器阵列。在一些实施例中，二极管包括锗或锗合金，其可以在相对低的温度下沉积和结晶，从而允许在导体中使用铝或铜。本发明的存储单元可以用作可重写存储单元或一次可编程存储单元，并且可以存储两个或多个数据状态。

49. 发明申请

US20120167969A1 Zener Diode Within a Diode Structure Providing Shunt Protection 失效
标题翻译：二极管内的齐纳二极管提供并联保护
公开(公告)号：US20120167969A1
公开(公告)日：2012-07-05
申请号：US13020849
申请日：2011-02-04
申请人： Christopher J. Petti
发明人： Christopher J. Petti
IPC分类号： H01L31/02
CPC分类号： H01L27/1421 , H01L31/0747 , H01L31/1892 , Y02E10/50
摘要： A structure to provide a Zener diode to avoid shunt formation is disclosed. An undoped or lightly doped monocrystalline thin semiconductor lamina is cleaved from a donor body which is not permanently affixed to a support element. The lamina may be annealed at high temperature to remove damage from a prior implant. At least one aperture is formed through the lamina, either due to flaws in the cleaving process, or intentionally following cleaving. Heavily doped amorphous silicon layers having opposite conductivity types are deposited on opposite faces of the lamina, one forming the emitter and one a base contact to a photovoltaic cell, while the lamina forms the base of the cell. The heavily doped layers contact in the aperture, forming a Zener diode. This Zener diode prevents formation of shunts, and may behave as a bypass diode if the cell is placed under heavy reverse bias, as when one cell in a series string is shaded while the rest of the string is exposed to sun.
摘要翻译：公开了提供齐纳二极管以避免分流形成的结构。未掺杂或轻掺杂的单晶薄半导体层从不永久地固定到支撑元件的施主体断开。层可以在高温下退火以去除以前的植入物的损伤。由于切割过程中的缺陷，或者故意在切割之后，至少一个孔通过层形成。具有相反导电类型的重掺杂非晶硅层沉积在层的相对表面上，一个形成发射极，另一个与光伏电池的基极接触，而薄层形成电池的基极。重掺杂层在孔中接触，形成齐纳二极管。该齐纳二极管防止分流器的形成，并且如果电池放置在较强的反向偏压下，则可能表现为旁路二极管，如串联串中的一个电池阴影而串的其余部分暴露在阳光下时。

50. 发明授权

US08129613B2 Photovoltaic cell comprising a thin lamina having low base resistivity and method of making 有权
标题翻译：光电池包括具有低基极电阻率的薄层和制造方法
公开(公告)号：US08129613B2
公开(公告)日：2012-03-06
申请号：US12189157
申请日：2008-08-10
申请人： Mohamed M. Hilali , Christopher J. Petti
发明人： Mohamed M. Hilali , Christopher J. Petti
IPC分类号： H01L31/00
CPC分类号： H01L31/03682 , H01L31/022425 , H01L31/03685 , H01L31/03762 , H01L31/061 , H01L31/1804 , H01L31/1808 , H01L31/1816 , H01L31/1836 , H01L31/1852 , H01L31/1896 , Y02E10/544 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p-n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.
摘要翻译：在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。

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