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    • 41. 发明申请
    • Scanning Laser Projector
    • 扫描激光投影机
    • US20120105812A1
    • 2012-05-03
    • US13289422
    • 2011-11-04
    • Ronald DekkerEdwin Jan Klein
    • Ronald DekkerEdwin Jan Klein
    • G03B21/14
    • H04N9/3129A61B5/0062A61B5/0064A61B5/0068A61B5/4887A61B5/489G02B6/12004G02B6/12007G02B6/29388G02B2006/12035G03B21/2033G03B33/06G03B33/12
    • A scanning projector for projecting an image comprising multiple wavelength signals is disclosed. Embodiments of the present invention include a beam combiner comprising a planar lightwave circuit having a plurality of surface waveguides arranged to define a plurality of input ports, a mixing region, and an output port. Each input port receives a different wavelength signal and provides it to the mixing region. The mixing region combines the plurality of wavelength signals into a single composite output beam that is scanned over a region to create an image in a region.In some embodiments, the projector (1) interrogates image points in the region using a first wavelength signal to determine a measurand and (2) projects an image over the image points of the region using a second wavelength signal, wherein each image point is illuminated with the second wavelength signal based on a measurand at that image point.
    • 公开了一种用于投影包括多个波长信号的图像的扫描投影仪。 本发明的实施例包括一种光束组合器,其包括具有布置成限定多个输入端口的多个表面波导的平面光波电路,混合区域和输出端口。 每个输入端口接收不同的波长信号并将其提供给混合区域。 混合区域将多个波长信号组合成单个复合输出光束,该单个复合输出光束在区域上扫描以在区域中产生图像。 在一些实施例中,投影仪(1)使用第一波长信号询问该区域中的图像点以确定被测量,并且(2)使用第二波长信号在图像点上投影图像,其中每个图像点被照亮 基于在该图像点处的被测量的第二波长信号。
    • 49. 发明授权
    • Bipolar transistor with floating guard region under extrinsic base
    • 双极晶体管,外部基极具有浮动保护区域
    • US5221856A
    • 1993-06-22
    • US833599
    • 1992-02-10
    • Ronald DekkerMartinus C. A. M. KoolenHenricus G. R. Maas
    • Ronald DekkerMartinus C. A. M. KoolenHenricus G. R. Maas
    • H01L21/225H01L21/285H01L21/32H01L21/3213H01L21/3215H01L21/331H01L21/60H01L29/732
    • H01L21/76897H01L21/2257H01L21/28506H01L21/28525H01L21/32H01L21/32134H01L21/32155H01L29/66242H01L29/66272H01L29/7325
    • A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12). A second device region (20) of the opposite conductivity type within the subsidiary region (12) has an intrinsic subsidiary region (21) and an extrinsic subsidiary region (23,24) surrounding the intrinsic subsidiary region (21) forming respective first and second pn junctions (22,25) with the relatively lowly doped subsidiary region (12). A third device region (30) of the one conductivity type is formed within the intrinsic subsidiary region (21) surface (1a). An additional region (60,60',61,62) is provided beneath the extrinsic subsidiary region (23,24) so as to lie within the spread of the depletion region (250) associated with the second pn junction (25) when the first and second pn junction (22,25) are reverse-biassed thereby extending the depletion region (250) beneath the emitter region (30) to cause an increase in the Early voltage (V.sub.eaf) of the device.
    • 与半导体本体(1)的一个主表面(1a)相邻的一种导电类型的第一器件区域(10)具有相对高度掺杂的辅助区域(11),该区域通过相对低掺杂的子元件与一个主表面(1a)间隔开 区域(12)。 在辅助区域(12)内具有相反导电类型的第二设备区域(20)具有内部辅助区域(21)和围绕内部辅助区域(21)的外在辅助区域(23,24),形成相应的第一和第二 pn结(22,25)与相对低掺杂的辅助区域(12)。 一个导电类型的第三器件区域(30)形成在本征辅助区域(21)表面(1a)内。 在外部辅助区域(23,24)的下方提供附加区域(60,60',61,62),以便当位于与第二pn结(25)相关联的耗尽区域(250)的扩展区内时 第一和第二pn结(22,25)被反向偏压,从而将耗尽区(250)延伸到发射极区(30)之下,以引起器件的早期电压(Veaf)的增加。