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41. 发明授权

US08390987B2 High energy density storage material device using nanochannel structure 有权
标题翻译：高能量密度储存材料器件采用纳米通道结构
公开(公告)号：US08390987B2
公开(公告)日：2013-03-05
申请号：US13559095
申请日：2012-07-26
申请人： Richard A. Haight , Stephen M. Rossnagel
发明人： Richard A. Haight , Stephen M. Rossnagel
IPC分类号： H01G9/00
CPC分类号： H01G9/145 , B82Y99/00 , H01G9/004 , H01G9/155 , Y02E60/13
摘要： A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
摘要翻译：电容器包括形成在电介质材料中的多个纳米通道。在纳米通道的内表面上形成导电膜，并且在导电膜上形成电荷势垒。在纳米通道中设置电解液。电极与纳米通道中的电解液结合形成电容器。

42. 发明授权

US08287604B2 High energy density storage material device using nanochannel structure 有权
标题翻译：高能量密度储存材料器件采用纳米通道结构
公开(公告)号：US08287604B2
公开(公告)日：2012-10-16
申请号：US12699411
申请日：2010-02-03
申请人： Richard A. Haight , Stephen M. Rossnagel
发明人： Richard A. Haight , Stephen M. Rossnagel
IPC分类号： H01G9/00
CPC分类号： H01G9/145 , B82Y99/00 , H01G9/004 , H01G9/155 , Y02E60/13
摘要： A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
摘要翻译：电容器包括形成在电介质材料中的多个纳米通道。在纳米通道的内表面上形成导电膜，并且在导电膜上形成电荷势垒。在纳米通道中设置电解液。电极与纳米通道中的电解液结合形成电容器。

43. 发明申请

US20120193236A1 ELECTRON BEAM SCULPTING OF TUNNELING JUNCTION FOR NANOPORE DNA SEQUENCING 有权
标题翻译：用于纳米DNA序列的隧道结的电子束扫描
公开(公告)号：US20120193236A1
公开(公告)日：2012-08-02
申请号：US13359729
申请日：2012-01-27
申请人： Hongbo Peng , Stephen M. Rossnagel , Ajay K. Royyuru , Gustavo A. Stolovitky , Deqiang Wang
发明人： Hongbo Peng , Stephen M. Rossnagel , Ajay K. Royyuru , Gustavo A. Stolovitky , Deqiang Wang
IPC分类号： G01N27/453 , C21D1/40
CPC分类号： G01N33/48721 , Y10S977/712
摘要： A nanodevice is provided that includes a reservoir filled with a conductive fluid and a membrane separating the reservoir. The membrane includes an electrode layer having a tunneling junction formed therein. A nanopore is formed through the membrane, and the nanopore is formed through other layers of the membrane such that the nanopore is aligned with the tunneling junction of the electrode layer. When a voltage is applied to the electrode layer, a tunneling current is generated by a base in the tunneling junction to be measured as a signature for distinguishing the base. When an organic coating is formed on an inside surface of the tunneling junction, transient bonds are formed between the electrode layer and the base.
摘要翻译：提供了一种纳米器件，其包括填充有导电流体的储存器和分离储存器的膜。膜包括其中形成有隧道结的电极层。通过膜形成纳米孔，并且纳米孔通过膜的其它层形成，使得纳米孔与电极层的隧道结对准。当向电极层施加电压时，通过作为区分基底的标记的待测量的隧道结中的基底产生隧穿电流。当在隧道结的内表面上形成有机涂层时，在电极层和基底之间形成瞬态结合。

44. 发明授权

US08039250B2 Piezoelectric-based nanopore device for the active control of the motion of polymers through the same 有权
标题翻译：用于主动控制聚合物运动的压电基纳米孔装置
公开(公告)号：US08039250B2
公开(公告)日：2011-10-18
申请号：US12723724
申请日：2010-03-15
申请人： Hongbo Peng , Gustavo A. Stolovitzky , Stephen M. Rossnagel , Stanislav Polonsky , Binquan Luan , Glenn J. Martyna
发明人： Hongbo Peng , Gustavo A. Stolovitzky , Stephen M. Rossnagel , Stanislav Polonsky , Binquan Luan , Glenn J. Martyna
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： C12Q1/6869 , Y10T29/42 , C12Q2565/631
摘要： Apparatus, system, and methods are provided for utilizing piezoelectric material for controlling a polymer through a nanopore. A reservoir is formed filled with conductive fluid. A membrane is formed that separates the reservoir. A nanopore is formed through the membrane. The membrane comprises electrical conductive layers, piezoelectric layers, and insulating layers. The piezoelectric layers are operative to control a size of the nanopore for clamping/releasing a polymer as well as to control the thickness of part of the membrane when a voltage is applied to the piezoelectric layers. Combinations of clamping/releasing the polymer and changing the thickness of part of the membrane can move a polymer through the nanopore at any electrically controlled speed and also stretch or break a polymer in the nanopore.
摘要翻译：提供了利用压电材料通过纳米孔控制聚合物的装置，系统和方法。形成填充有导电流体的储存器。形成隔离储存器的膜。通过膜形成纳米孔。膜包括导电层，压电层和绝缘层。压电层可操作以控制用于夹紧/释放聚合物的纳米孔的尺寸，以及当向压电层施加电压时控制膜的一部分的厚度。夹持/释放聚合物和改变膜的一部分厚度的组合可以以任何电控速度移动聚合物通过纳米孔，并且还拉伸或破坏纳米孔中的聚合物。

45. 发明申请

US20110223652A1 PIEZOELECTRIC-BASED NANOPORE DEVICE FOR THE ACTIVE CONTROL OF THE MOTION OF POLYMERS THROUGH THE SAME 有权
标题翻译：用于主动控制聚合物运动的基于压电陶瓷的纳米器件
公开(公告)号：US20110223652A1
公开(公告)日：2011-09-15
申请号：US12723724
申请日：2010-03-15
申请人： Hongbo Peng , Gustavo A. Stolovitsky , Stephen M. Rossnagel , Stanislav Polonsky , Binquan Luan , Glenn J. Martyna
发明人： Hongbo Peng , Gustavo A. Stolovitsky , Stephen M. Rossnagel , Stanislav Polonsky , Binquan Luan , Glenn J. Martyna
IPC分类号： G01N33/48 , G01N27/447 , C12M1/34 , H04R17/00
CPC分类号： C12Q1/6869 , Y10T29/42 , C12Q2565/631
摘要： Apparatus, system, and methods are provided for utilizing piezoelectric material for controlling a polymer through a nanopore. A reservoir is formed filled with conductive fluid. A membrane is formed that separates the reservoir. A nanopore is formed through the membrane. The membrane comprises electrical conductive layers, piezoelectric layers, and insulating layers. The piezoelectric layers are operative to control a size of the nanopore for clamping/releasing a polymer as well as to control the thickness of part of the membrane when a voltage is applied to the piezoelectric layers. Combinations of clamping/releasing the polymer and changing the thickness of part of the membrane can move a polymer through the nanopore at any electrically controlled speed and also stretch or break a polymer in the nanopore.
摘要翻译：提供了利用压电材料通过纳米孔控制聚合物的装置，系统和方法。形成填充有导电流体的储存器。形成隔离储存器的膜。通过膜形成纳米孔。膜包括导电层，压电层和绝缘层。压电层可操作以控制用于夹紧/释放聚合物的纳米孔的尺寸，以及当向压电层施加电压时控制膜的一部分的厚度。夹持/释放聚合物和改变膜的一部分厚度的组合可以以任何电控速度移动聚合物通过纳米孔，并且还拉伸或破坏纳米孔中的聚合物。

46. 发明授权

US08003319B2 Systems and methods for controlling position of charged polymer inside nanopore 有权
标题翻译：用于控制纳米孔内带电聚合物位置的系统和方法
公开(公告)号：US08003319B2
公开(公告)日：2011-08-23
申请号：US11670621
申请日：2007-02-02
申请人： Stanislav Polonsky , Stephen M. Rossnagel , Gustavo A. Stolovitzky
发明人： Stanislav Polonsky , Stephen M. Rossnagel , Gustavo A. Stolovitzky
IPC分类号： C12Q1/68 , G01N33/53 , C12M1/00 , C12M1/34 , C12M3/00
CPC分类号： G01N33/48721 , B82Y15/00 , B82Y30/00 , C12Q1/6825 , C12Q1/6869 , G01N2015/0038 , Y10S977/924 , C12Q2565/631 , C12Q2565/607 , C12Q2563/155
摘要： Techniques for controlling the position of a charged polymer inside a nanopore are provided. For example, one technique includes using electrostatic control to position a linear charged polymer inside a nanopore, and creating an electrostatic potential well inside the nanopore, wherein the electrostatic potential well controls a position of the linear charged polymer inside the nanopore.
摘要翻译：提供了用于控制纳米孔内带电聚合物位置的技术。例如，一种技术包括使用静电控制将线性带电聚合物定位在纳米孔内，并在纳米孔内产生静电势阱，其中静电势阱控制纳米孔内线性带电聚合物的位置。

47. 发明申请

US20110201204A1 Precisely Tuning Feature Sizes on Hard Masks Via Plasma Treatment 有权
标题翻译：通过等离子体处理精确调整硬面膜的特征
公开(公告)号：US20110201204A1
公开(公告)日：2011-08-18
申请号：US12704665
申请日：2010-02-12
申请人： Hongbo Peng , Stephen M. Rossnagel , Katherine L. Saenger
发明人： Hongbo Peng , Stephen M. Rossnagel , Katherine L. Saenger
IPC分类号： H01L21/31
CPC分类号： H01L21/0337 , B81B2201/058 , B81C1/00071 , H01L21/0338
摘要： Methods are provided for fabricating devices. A first layer is formed. A hardmask on the first layer is formed. Features on the hardmask are patterned. The sizes of features on the hardmask are reduced by applying a plasma treatment process to form reduced size features. Also, the size of features on the hardmask can be enlarged to form enlarged size features by applying the plasma treatment process and/or removing the oxidized part of the feature during plasma treatment process. Another method may include a first layer formed on a substrate and a second layer formed on the first layer. First features are patterned on the first layer, and second features are patterned on the second layer. A size of second features on the second layer is closed due to the different oxidation rate of the two layers during the plasma treatment process, to form a self-sealed channel and/or self-buried trench.
摘要翻译：提供了制造器件的方法。形成第一层。形成第一层上的硬掩模。硬掩模上的特征被图案化。通过应用等离子体处理工艺来形成尺寸减小的特征，可减少硬掩模上的特征尺寸。此外，通过在等离子体处理过程中应用等离子体处理工艺和/或去除特征的氧化部分，可以扩大硬掩模上的特征的尺寸以形成扩大的尺寸特征。另一种方法可以包括形成在基底上的第一层和形成在第一层上的第二层。第一特征在第一层上被图案化，并且第二特征被图案化在第二层上。由于在等离子体处理过程中两层的氧化速率不同，所以第二层上的第二特征的尺寸是封闭的，以形成自密封通道和/或自埋式沟槽。

48. 发明申请

US20110127438A1 Dosimeter Powered by Passive RF Absorption 有权
标题翻译：剂量计由被动RF吸收
公开(公告)号：US20110127438A1
公开(公告)日：2011-06-02
申请号：US12627076
申请日：2009-11-30
申请人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
发明人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
IPC分类号： G01T1/02 , G01T3/00
CPC分类号： G01T1/026
摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.
摘要翻译：用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变，剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

49. 发明授权

US5171709A Laser methods for circuit repair on integrated circuits and substrates 失效
标题翻译：用于集成电路和基板的电路修复的激光方法
公开(公告)号：US5171709A
公开(公告)日：1992-12-15
申请号：US770838
申请日：1991-10-04
申请人： John J. Donelon , James P. Doyle , Jerry E. Hurst, Jr. , Stephen M. Rossnagel
发明人： John J. Donelon , James P. Doyle , Jerry E. Hurst, Jr. , Stephen M. Rossnagel
IPC分类号： H01L21/48 , H01L21/768 , H05K3/18 , H05K3/22
CPC分类号： H05K3/225 , H01L21/4846 , H01L21/76894 , H05K2203/107 , H05K2203/1136 , H05K2203/173 , H05K3/182
摘要： The present invention relates to a method of accessing and repairing electrical opens in conducting metal lines on a semiconductor chip or other substrate using a thin conductive layer formed within the surface of a substrate and laser plating techniques. What has been described is a maskless means of repairing discontinuities in a conductor disposed on the surface of a substrate wherein the surface is locally irradiated to form a reversible carbonaceous layer thereon. This reversible carbonaceous layer acts as a base for electrodeless deposition of a metal to form a bridge across the discontinuity by laser-enhanced exchange plating or other suitable methods. Further, a means of accessing and repairing a discontinuity buried by a cover layer of an insulating or passivating material is described, wherein access to the discontinuity is provided by ablating away the cover layer using a pulsed excimer laser at a first power level.
摘要翻译：本发明涉及使用形成在基板表面内的薄导电层和激光镀覆技术来访问和修复在半导体芯片或其它基板上的导电金属线路中的电气开口的方法。已经描述的是在设置在衬底的表面上的导体中修复不连续性的无掩模方法，其中局部照射表面以在其上形成可逆碳质层。这种可逆的碳质层用作金属的无电极沉积的基底，以通过激光增强交换电镀或其它合适的方法跨越不连续形成桥。此外，描述了访问和修复由绝缘或钝化材料的覆盖层掩埋的不连续性的方法，其中通过在第一功率水平下使用脉冲准分子激光器去除覆盖层来提供对不连续性的访问。

50. 发明授权

US4588490A Hollow cathode enhanced magnetron sputter device 失效
标题翻译：空心阴极增强磁控溅射装置
公开(公告)号：US4588490A
公开(公告)日：1986-05-13
申请号：US736918
申请日：1985-05-22
申请人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
发明人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
IPC分类号： C23F4/00 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3405
摘要： A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.
摘要翻译：等离子体溅射蚀刻/沉积系统，其包括与常规等离子体溅射蚀刻/沉积系统如磁控管组合的电子发射空心阴极电弧源。所发射的电子被耦合到固有的高能量例如磁场中，并被等离子体电势加速并且引起显着增加的等离子体密度。所得到的组合允许比以前的装置更大的溅射/沉积效率。根据本发明的另一方面，切换操作是可能的，由此蚀刻可以从各向同性到各向异性。还描述了用于增强某些溅射/沉积工艺的侧面放电中空阴极结构，其中电子可以从中空阴极室侧面的一个或多个开口发射，以在大的处理室中实现更均匀的电子发射。

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