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41. 发明申请

US20130328124A1 GATED DIODE STRUCTURE FOR ELIMINATING RIE DAMAGE FROM CAP REMOVAL 失效
标题翻译：用于消除从盖拆卸中的RIE损伤的栅极二极管结构
公开(公告)号：US20130328124A1
公开(公告)日：2013-12-12
申请号：US13489537
申请日：2012-06-06
申请人： Anthony I. Chou , Arvind Kumar , Edward P. Maciejewski , Shreesh Narasimha , Dustin K. Slisher
发明人： Anthony I. Chou , Arvind Kumar , Edward P. Maciejewski , Shreesh Narasimha , Dustin K. Slisher
IPC分类号： H01L27/06 , H01L21/8238
CPC分类号： H01L21/8238 , H01L21/265 , H01L21/77 , H01L21/823835 , H01L27/0629 , H01L27/1203 , H01L29/42364 , H01L29/7391 , H01L29/861
摘要： A semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided source, a silicided drain and a silicided HiK gate stack. The semiconductor structure eliminates a cap removal RIE in a gate first High-K metal gate flow from the region of the gated-diode. The lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow. The absence of the cap removal RIE is beneficial in that diffusions of the diode are not subjected to the cap removal RIE, which avoids damage and allows retaining its highly ideal junction characteristics.
摘要翻译：一种半导体结构，其具有多个具有硅化阳极（p掺杂区域）和阴极（n掺杂区域）的门控二极管和由非硅化栅极材料制成的高K栅极堆叠，该门控二极管相邻其中每一个具有硅化源，硅化物漏极和硅化HiK栅极叠层。半导体结构消除了栅极第一高K金属栅极流从栅极二极管的区域流出的帽去除RIE。优选在栅极第一工艺流程期间，在二极管的栅极上缺少硅化物和存在氮化物阻挡层。没有帽去除RIE是有益的，因为二极管的扩散不经受帽去除RIE，这避免了损伤并且允许保持其高度理想的结特性。

42. 发明授权

US08482075B2 Structure and method for manufacturing asymmetric devices 有权
标题翻译：用于制造不对称装置的结构和方法
公开(公告)号：US08482075B2
公开(公告)日：2013-07-09
申请号：US13468270
申请日：2012-05-10
申请人： Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert Robison
发明人： Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert Robison
IPC分类号： H01L21/70
CPC分类号： H01L21/26586 , H01L29/1083 , H01L29/66492 , H01L29/66545 , H01L29/66659
摘要： A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.
摘要翻译：在基板上形成多个栅极结构。每个栅极结构包括第一栅极电极和源极和漏极区域。从每个栅极结构去除第一栅电极。施加第一光致抗蚀剂以在源向下方向上阻挡具有源极区的栅极结构。在栅极结构中进行第一光晕注入，其栅源结构的源极区域在源极方向上以第一角度。去除第一光致抗蚀剂。施加第二光致抗蚀剂以阻挡在源向上方向上具有源极区的栅极结构。在栅极结构中进行第二光晕注入，其栅源结构的源极区域以源向下方向为第二角度。去除第二光致抗蚀剂。在每个栅极结构中形成替代栅电极。

43. 发明授权

US08343781B2 Electrical mask inspection 失效
标题翻译：电气面罩检查
公开(公告)号：US08343781B2
公开(公告)日：2013-01-01
申请号：US12886612
申请日：2010-09-21
申请人： Arvind Kumar , Anthony I-Chih Chou , Shreesh Narasimha
发明人： Arvind Kumar , Anthony I-Chih Chou , Shreesh Narasimha
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L23/544 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain.
摘要翻译：公开了一种用于电气掩模检查的装置和方法。在两个金属层和通孔层之间形成扫描链。三层之一是被测功能层，另外两层是测试层。使用扫描链的电阻测量来确定在包括扫描链的通孔或金属段之一内是否存在潜在缺陷。

44. 发明申请

US20120192000A1 METHOD AND APPARATUS FOR COST AND POWER EFFICIENT, SCALABLE OPERATING SYSTEM INDEPENDENT SERVICES 有权
标题翻译：成本和功率有效的可扩展操作系统独立服务的方法和装置
公开(公告)号：US20120192000A1
公开(公告)日：2012-07-26
申请号：US13436835
申请日：2012-03-30
申请人： Arvind Kumar , Per Hammarlund , Glenn Hinton , Johan G. Van De Groenendaal
发明人： Arvind Kumar , Per Hammarlund , Glenn Hinton , Johan G. Van De Groenendaal
IPC分类号： G06F1/00
CPC分类号： G06F1/3287 , G06F1/3209 , Y02D10/171
摘要： A low cost, low power consumption scalable architecture is provided to allow a computer system to be managed remotely during all system power states. In a lowest power state, power is only applied to minimum logic necessary to examine a network packet. Power is applied for a short period of time to an execution subsystem and one of a plurality of cores selected to handle processing of received service requests. After processing the received service requests, the computer system returns to the lowest power state.
摘要翻译：提供了低成本，低功耗的可扩展架构，以允许在所有系统电源状态期间远程管理计算机系统。在最低功率状态下，功率仅适用于检查网络分组所需的最小逻辑。将电力短时间施加到执行子系统，并且被选择用于处理所接收的服务请求的处理的多个核心中的一个。在处理接收到的服务请求之后，计算机系统返回到最低功率状态。

45. 发明申请

US20120068174A1 ELECTRICAL MASK INSPECTION 失效
标题翻译：电磁屏蔽检查
公开(公告)号：US20120068174A1
公开(公告)日：2012-03-22
申请号：US12886612
申请日：2010-09-21
申请人： Arvind Kumar , Anthony I-Chih Chou , Shreesh Narasimha
发明人： Arvind Kumar , Anthony I-Chih Chou , Shreesh Narasimha
IPC分类号： H01L23/522 , H01L21/66 , H01L21/768
CPC分类号： H01L23/544 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain.
摘要翻译：公开了一种用于电气掩模检查的装置和方法。在两个金属层和通孔层之间形成扫描链。三层之一是被测功能层，另外两层是测试层。使用扫描链的电阻测量来确定在包括扫描链的通孔或金属段之一内是否存在潜在缺陷。

46. 发明授权

US08034692B2 Structure and method for manufacturing asymmetric devices 有权
标题翻译：用于制造不对称装置的结构和方法
公开(公告)号：US08034692B2
公开(公告)日：2011-10-11
申请号：US12581924
申请日：2009-10-20
申请人： Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert R. Robison
发明人： Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert R. Robison
IPC分类号： H01L21/336
CPC分类号： H01L21/26586 , H01L29/1083 , H01L29/66492 , H01L29/66545 , H01L29/66659
摘要： A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.
摘要翻译：在基板上形成多个栅极结构。每个栅极结构包括第一栅极电极和源极和漏极区域。从每个栅极结构去除第一栅电极。施加第一光致抗蚀剂以在源向下方向上阻挡具有源极区的栅极结构。在栅极结构中进行第一光晕注入，其栅源结构的源极区域在源极方向上以第一角度。去除第一光致抗蚀剂。施加第二光致抗蚀剂以阻挡在源向上方向上具有源极区的栅极结构。在栅极结构中进行第二光晕注入，其栅源结构的源极区域以源向下方向为第二角度。去除第二光致抗蚀剂。在每个栅极结构中形成替代栅电极。

47. 发明申请

US20110163383A1 BULK SUBSTRATE FET INTEGRATED ON CMOS SOI 有权
标题翻译：集成在CMOS SOI上的基极FET
公开(公告)号：US20110163383A1
公开(公告)日：2011-07-07
申请号：US12683456
申请日：2010-01-07
申请人： Anthony I. Chou , Arvind Kumar , Shreesh Narasimha , Ning Su , Huiling Shang
发明人： Anthony I. Chou , Arvind Kumar , Shreesh Narasimha , Ning Su , Huiling Shang
IPC分类号： H01L27/12 , H01L21/86
CPC分类号： H01L27/1207 , H01L21/84
摘要： An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.
摘要翻译：提供了一种集成电路，其将同一芯片上的体FET和SOI FET集成在一起，其中，本体FET包括在大块衬底上形成的栅极氧化物上的栅极导体，其中本体FET的栅极电介质具有相同的厚度，与SOI FET的掩埋绝缘层基本共面。在优选实施例中，通过在指定的大容量器件区域中与SOI层的有源区相邻的SOI层和SOI晶片的掩埋绝缘层形成体接触沟槽，从SOI晶片形成本体FET。邻近体接触沟槽的SOI层的有源区域形成体FET的栅极导体，其覆盖形成本体FET的栅极电介质的下层掩埋绝缘层的一部分。

48. 发明授权

US07936042B2 Field effect transistor containing a wide band gap semiconductor material in a drain 有权
标题翻译：在漏极中含有宽带隙半导体材料的场效应晶体管
公开(公告)号：US07936042B2
公开(公告)日：2011-05-03
申请号：US11939017
申请日：2007-11-13
申请人： Arvind Kumar
发明人： Arvind Kumar
IPC分类号： H01L29/02
CPC分类号： H01L21/26586 , H01L29/165 , H01L29/6653 , H01L29/66636 , H01L29/66659 , H01L29/7833 , H01L29/7848
摘要： A field effect transistor comprising a silicon containing body is provided. After formation of a gate dielectric, gate electrode, and a first gate spacer, a drain side trench is formed and filled with a wide band gap semiconductor material. Optionally, a source side trench may be formed and filled with a silicon germanium alloy to enhance an on-current of the field effect transistor. Halo implantation and source and drain ion implantation are performed to form various doped regions. Since the wide band gap semiconductor material as a wider band gap than that of silicon, impact ionization is reduced due to the use of the wide band gap semiconductor material in the drain, and consequently, a breakdown voltage of the field effect transistor is increased compared to transistors employing silicon in the drain region.
摘要翻译：提供了包括硅含量体的场效应晶体管。在形成栅极电介质，栅极电极和第一栅极间隔物之后，形成漏极侧沟槽并填充宽带隙半导体材料。可选地，可以形成源极沟槽并填充硅锗合金以增强场效应晶体管的导通电流。进行光晕注入和源极和漏极离子注入以形成各种掺杂区域。由于宽带隙半导体材料作为比硅的带隙宽的带隙，由于在漏极中使用宽带隙半导体材料，因此冲击电离降低，因此，场效应晶体管的击穿电压比较涉及在漏极区域中使用硅的晶体管。

49. 发明授权

US07838942B2 Substrate solution for back gate controlled SRAM with coexisting logic devices 有权
标题翻译：用于具有共存逻辑器件的背栅控制SRAM的衬底解决方案
公开(公告)号：US07838942B2
公开(公告)日：2010-11-23
申请号：US12144272
申请日：2008-06-23
申请人： Robert H. Dennard , Wilfried E. Haensch , Arvind Kumar , Robert J. Miller
发明人： Robert H. Dennard , Wilfried E. Haensch , Arvind Kumar , Robert J. Miller
IPC分类号： H01L29/76
CPC分类号： H01L27/1108
摘要： A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device.
摘要翻译：一种半导体结构，其包括至少一个逻辑器件区域和至少一个静态随机存取存储器（SRAM）器件区域，其中每个器件区域包括双门控场效应晶体管（FET），其中每个FET器件的背栅极掺杂提供了特定的水平，以提高不同器件区域内的FET器件的性能。特别地，SRAM器件区域内的背栅极比逻辑器件区域内的后栅极重掺杂。为了控制短沟道效应，逻辑器件区域内的FET器件包括掺杂沟道，而SRAM器件区域内的FET器件不是。在源极/漏极区域之下具有低净掺杂的非均匀横向掺杂分布和在沟道下方的高净掺杂将为逻辑器件提供附加的SCE控制。

50. 发明申请

US20100249175A1 Dicationic compounds which selectively recognize G-quadruplex DNA 审中-公开
标题翻译：选择性识别G-四链体DNA的阳离子化合物
公开(公告)号：US20100249175A1
公开(公告)日：2010-09-30
申请号：US11478453
申请日：2006-06-29
申请人： W. David Wilson , David W. Boykin , Elizabeth W. White , Mohamed A. Ismail , Arvind Kumar , Rupesh Nanjunda , Richard R. Tidwell
发明人： W. David Wilson , David W. Boykin , Elizabeth W. White , Mohamed A. Ismail , Arvind Kumar , Rupesh Nanjunda , Richard R. Tidwell
IPC分类号： A61K31/437 , C12P19/34 , C12N5/071 , C12N5/02 , A61K31/4178 , C07H21/04 , C07D471/04 , C07D405/14 , A61P35/04
CPC分类号： A61K31/341 , A61K31/33 , A61K31/381 , A61K31/4164 , A61K31/4184 , A61K31/443 , C07D345/00 , C07D405/14 , C07D421/14 , Y02A50/409 , Y02A50/411 , Y02A50/415
摘要： Dicationic compounds that are highly selective for binding G-quadruplex DNA are described. Several compounds exhibit groove binding toward G-quadruplex DNA and in vitro and in vivo activity versus Trypanosoma brucei rhodesiense. The compounds represent novel drugs for the treatment of cancer, malaria, leishmania, and trypanosomiasis.
摘要翻译：描述了对结合G-四链体DNA具有高度选择性的起始化合物。几种化合物表现出与G-四链体DNA结合的凹槽，并且与罗氏黑曲霉相比体外和体内活性。这些化合物代表用于治疗癌症，疟疾，利什曼原虫和锥虫病的新型药物。

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