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41. 发明申请

US20090161329A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090161329A1
公开(公告)日：2009-06-25
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/66
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

42. 发明申请

US20070001300A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070001300A1
公开(公告)日：2007-01-04
申请号：US11451579
申请日：2006-06-13
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

43. 发明申请

US20060028277A1 Power amplifier module 失效
标题翻译：功率放大器模块
公开(公告)号：US20060028277A1
公开(公告)日：2006-02-09
申请号：US11247185
申请日：2005-10-12
申请人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
发明人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
IPC分类号： H03G3/10
CPC分类号： H03F1/02 , H03F1/30 , H03F3/21 , H03G7/001 , H03G7/06
摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
摘要翻译：本发明提供了一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。

44. 发明授权

US06952565B1 Communication terminal, automobile communication terminal, and automobile 失效
标题翻译：通信终端，汽车通信终端和汽车
公开(公告)号：US06952565B1
公开(公告)日：2005-10-04
申请号：US10110345
申请日：1999-10-13
申请人： Eriko Takeda , Kiichi Yamashita , Kenji Sekine , Ken Takei
发明人： Eriko Takeda , Kiichi Yamashita , Kenji Sekine , Ken Takei
IPC分类号： H04B1/3822 , H04B1/40
CPC分类号： H04B1/40
摘要： The present invention provides a communication terminal that enables precise communications with optimum receive sensitivity at any time regardless of any change in peripheral environments of an antenna thereof. The communication terminal including means for transmitting and receiving radio waves is provided with a training mechanism for enabling the communication terminal itself to conduct training mode for tuning receive sensitivity, and switching mechanism for switching between normal communication mode and the training mode. The communication terminal is particularly useful as a communication terminal for automobile in the Intelligent Transport System or the like.
摘要翻译：本发明提供了一种通信终端，其能够在任何时候实现具有最佳接收灵敏度的精确通信，而不管其天线的外围环境如何变化。通信终端包括用于发送和接收无线电波的装置，设置有用于使通信终端本身能够进行用于调整接收灵敏度的训练模式的训练机制，以及用于在正常通信模式和训练模式之间切换的切换机制。通信终端在智能交通系统等中作为汽车的通信终端特别有用。

45. 发明授权

US06816017B2 Power amplifier module 失效
标题翻译：功率放大器模块
公开(公告)号：US06816017B2
公开(公告)日：2004-11-09
申请号：US09931877
申请日：2001-08-20
申请人： Kiichi Yamashita , Tomonori Tanoue , Isao Ohbu , Kenji Sekine
发明人： Kiichi Yamashita , Tomonori Tanoue , Isao Ohbu , Kenji Sekine
IPC分类号： H03F152
CPC分类号： H03F3/19 , H03F1/0261 , H03F1/302 , H03F3/347 , H03F2200/444
摘要： A power amplifier module is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation. Increase in base current from idling current of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-RET. By also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-RET, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-RET.
摘要翻译：功率放大器模块具有保护放大装置的功能，以防止由负载变化引起的天线反射引起的驻波的破坏。检测并抵消了负载变化中的最终级放大部分GaAs-HBT的空载电流的基极电流的增加，并抑制集电极电流，从而防止输出增加并防止GaAs-RET的破坏。通过使用在电源电压升高时连续降低空载电流并且与输出级GaAs-RET并联连接的二极管的限幅功能也被避免施加在输出级GaAs上的功能。 -RET。

46. 发明授权

US06636118B1 High-frequency power amplification module and radio communication device 失效
标题翻译：高频功率放大模块和无线通信设备
公开(公告)号：US06636118B1
公开(公告)日：2003-10-21
申请号：US09914678
申请日：2001-11-14
申请人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
发明人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
IPC分类号： H03F304
CPC分类号： H01L27/0255 , H03F1/52 , H03F3/195 , H03F2200/444 , H03F2203/21178
摘要： In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
摘要翻译：在其中级联多个异质结双极型晶体管（npn型HBT）的多级结构的高频功率放大器模块中，将多个pn结二极管串联连接的保护电路连接在每个HBT的集电极和发射极。 p侧连接到集电极侧，并且n侧连接到发射极侧。其中pn结二极管的数量等于或小于pn结二极管串联的保护电路连接在基极和发射极之间。 p侧连接到基极侧，并且n侧连接到发射极侧。通过该结构，由于天线侧的负载的波动，在集电极和发射极两端施加过电压的情况下，集电端子被保护电路的导通状态电压钳位，HBT可以防止被摧毁。由于类似的保护电路组装在基极和发射极之间，即使在制造高频功率放大器模块时操作者接触模块时，也可以防止HBT被保护电路的钳位效应所破坏基极和发射极以及集电极和发射极之间的保护电路。因此，可以实现高频功率放大器模块和无线通信装置的制造成品率的提高，并且可以防止由无线通信装置的负载阻抗的波动引起的破坏。

47. 发明授权

US06461927B1 Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06461927B1
公开(公告)日：2002-10-08
申请号：US09939671
申请日：2001-08-28
申请人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
发明人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
IPC分类号： H01L21331
CPC分类号： H01L21/8252 , H01L27/0605 , H01L29/41708 , H01L29/42304 , H01L29/73 , H01L29/7327 , H01L29/7371
摘要： In the case of a semiconductor device where a base electrode 11 in a collector top heterojunction bipolar transistor is disposed so as to contact with the side face of a base layer 5 in which no ion is implanted and the surface of a high resistance extrinsic emitter area 14 in which ion is implanted, the dependence of the current gain in the collector top HBT on the collector size can be diminished.
摘要翻译：在半导体器件的情况下，集电极顶部异质结双极晶体管中的基极11设置成与没有离子注入的基极层5的侧面和高电阻外部发射极区域的表面接触 14，其中注入离子，集电极顶部HBT中的电流增益与集电极尺寸的相关性可以减小。

48. 发明授权

US5305134A Optical frequency division multiplexing transmitter and optical frequency division multiplexing transmission apparatus 失效
标题翻译：光分频复用发射机和光分频复用传输装置
公开(公告)号：US5305134A
公开(公告)日：1994-04-19
申请号：US574086
申请日：1990-08-29
申请人： Hideaki Tsushima , Shinya Sasaki , Shigeki Kitajima , Kiichi Yamashita
发明人： Hideaki Tsushima , Shinya Sasaki , Shigeki Kitajima , Kiichi Yamashita
IPC分类号： G02F2/00 , H04B10/07 , H04B10/54 , H04B10/548 , H04J14/00 , H04J14/02 , H04B14/02 , H04B10/06
CPC分类号： H04B10/50 , H04B10/5563 , H04B10/572
摘要： An optical frequency division multiplexing transmitter is disclosed, which comprises a plurality of optical transmitters having different optical frequencies; an optical combiner multiplexing optical signals outputted by the different optical transmitters; and an optical filter having passbands, the frequency of each of which is approximately in accordance with the frequency of each of the signals, in which the signal thus multiplexed is inputted.
摘要翻译：公开了一种光频分复用发射机，其包括具有不同光频率的多个光发射机; 光合并器复用由不同光发射机输出的光信号; 以及具有通带的滤光器，其中的每一个的频率近似地与输入了如此多路复用的信号的每个信号的频率一致。

49. 发明授权

US4723312A Light emitting diode driver circuit 失效
标题翻译：发光二极管驱动电路
公开(公告)号：US4723312A
公开(公告)日：1988-02-02
申请号：US769971
申请日：1985-08-27
申请人： Kiichi Yamashita , Katsuyoshi Harasawa , Yoshitaka Takasaki
发明人： Kiichi Yamashita , Katsuyoshi Harasawa , Yoshitaka Takasaki
IPC分类号： H01L33/00 , H04B9/00
CPC分类号： H04B10/502
摘要： A high-speed light emitting diode driver circuit for optical communication systems, in which an impedance circuit is provided between the collector and emitter of a drive transistor, and another impedance circuit is provided on the emitter side. The light emitting diode is connected to the collector side of the drive transistor. The light emitting diode is driven by an input pulse signal applied to the base of the drive transistor.
摘要翻译：用于光通信系统的高速发光二极管驱动电路，其中阻抗电路设置在驱动晶体管的集电极和发射极之间，另一个阻抗电路设置在发射极侧。发光二极管连接到驱动晶体管的集电极侧。发光二极管由施加到驱动晶体管的基极的输入脉冲信号驱动。

50. 发明授权

US4604745A Method of searching fault locations in digital transmission line 失效
标题翻译：数字传输线故障位置检索方法
公开(公告)号：US4604745A
公开(公告)日：1986-08-05
申请号：US578791
申请日：1984-02-10
申请人： Yoshitaka Takasaki , Kiichi Yamashita , Yasushi Takahashi
发明人： Yoshitaka Takasaki , Kiichi Yamashita , Yasushi Takahashi
IPC分类号： H04B17/40 , H04L1/24 , H04B3/46
CPC分类号： H04L1/24 , H04B17/40
摘要： A method of searching fault locations which is employed in a transmission system comprising a transmitting terminal having a transmitter for transmitting a digital signal; a receiving terminal having a receiver for receiving the digital signal; a plurality of repeaters which are placed between the transmitting and receiving terminals, and each of which receives and amplifies the digital signal from a preceding repeater section and deliver it to a subsequent repeater section; and a plurality of transmission lines for connecting the transmitter with the first repeater, the repeaters with each other and the final repeater with each other and the final repeater with the receiver, respectively. This method comprises the steps of coding an original signal to be transmitted in terms of two kinds of error detecting codes at the transmitting terminal to send out them from the transmitter; detecting an error of a received signal using one of the two kinds of error detecting codes at each repeater thereby to measure the error rate at one repeater section corresponding to each repeater; recoding a decoded received signal using the error detecting code employed to detect the error, and delivering it to a subsequent repeater section, and transmitting signals each of which represents the error rate at each repeater section measured at each repeater, to the transmitting terminal or receiving terminal.
摘要翻译：一种搜索故障位置的方法，该传输系统包括具有用于发送数字信号的发射机的发射终端; 接收终端，具有接收数字信号的接收机; 放置在发送和接收终端之间的多个中继器，每个中继器从前一个中继器部分接收和放大数字信号，并将其传送到后续中继器部分; 以及多个传输线，用于将发射机与第一中继器连接，中继器彼此相连，最后中继器彼此相连，最后中继器分别与接收机相连。该方法包括以下步骤：在发送终端根据两种错误检测码对要发送的原始信号进行编码，以从发送器发送出来; 使用每个中继器的两种错误检测码之一检测接收信号的误差，从而测量与每个中继器对应的一个中继器部分的错误率; 使用用于检测误差的检错码重新编码解码的接收信号，并将其传送到后续中继器部分，并且将发送信号分别表示在每个中继器测量的每个转发器部分处的错误率，发送到发送终端或接收终奌站。

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