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41. 发明授权

US07432150B2 Method of manufacturing a magnetoelectronic device 有权
标题翻译：制造磁电子器件的方法
公开(公告)号：US07432150B2
公开(公告)日：2008-10-07
申请号：US11351610
申请日：2006-02-10
申请人： Mark A. Durlam , Gloria J. Kerszykowski , Nicholas D. Rizzo , Eric J. Salter , Loren J. Wise
发明人： Mark A. Durlam , Gloria J. Kerszykowski , Nicholas D. Rizzo , Eric J. Salter , Loren J. Wise
IPC分类号： H01L21/8234 , H01L21/8244
CPC分类号： H01L43/12
摘要： A method of manufacturing a magnetoelectronic device includes providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material, and implanting a magnetic material into the electrically insulating material. The magnetic material increases the magnetic permeability of the electrically insulating material. The implant may be a blanket or a targeted implant.
摘要翻译：制造磁电子器件的方法包括提供导电材料和与导电材料的至少一部分相邻的电绝缘材料，以及将磁性材料注入到电绝缘材料中。磁性材料增加了电绝缘材料的磁导率。植入物可以是毯子或靶向植入物。

42. 发明授权

US06783994B2 Method of fabricating a self-aligned magnetic tunneling junction and via contact 失效
标题翻译：制造自对准磁隧道结和通孔接触的方法
公开(公告)号：US06783994B2
公开(公告)日：2004-08-31
申请号：US10133136
申请日：2002-04-26
申请人： Nicholas D. Rizzo , Kelly W. Kyler , Gregory W. Grynkewich
发明人： Nicholas D. Rizzo , Kelly W. Kyler , Gregory W. Grynkewich
IPC分类号： H01L2100
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L21/76838 , H01L43/12
摘要： A method of fabricating a magnetoresistive random access memory device comprising the steps of providing a substrate, forming a first conductive layer positioned on the substrate, forming a conductive material stack region with a flat surface, the conductive material stack region being positioned on a portion of the first conductive layer, and forming a magnetoresistive random access memory device positioned on the flat surface of the conductive material stack region, the magnetoresistive random access memory device being isolated from the first conductive layer and subsequent layers grown thereon.
摘要翻译：一种制造磁阻随机存取存储器件的方法，包括以下步骤：提供衬底，形成位于衬底上的第一导电层，形成具有平坦表面的导电材料堆叠区域，所述导电材料堆叠区域位于所述第一导电层，以及形成位于所述导电材料堆叠区域的平坦表面上的磁阻随机存取存储器件，所述磁阻随机存取存储器件与所述第一导电层及其后生长的层隔离。

43. 发明授权

US06501144B1 Conductive line with multiple turns for programming a MRAM device 失效
标题翻译：具有多个匝数的导电线，用于编程MRAM器件
公开(公告)号：US06501144B1
公开(公告)日：2002-12-31
申请号：US10010812
申请日：2001-11-13
申请人： Nicholas D. Rizzo
发明人： Nicholas D. Rizzo
IPC分类号： H01L2982
CPC分类号： H01L27/222 , B82Y10/00 , G11C5/063 , G11C11/15
摘要： A conductive line for programming a magnetoresistive memory element comprising N metal layers separated by an electrically insulator layer, wherein the bit conductive is positioned proximate to a magnetoresistive memory device and flows a current that induces a magnetic field for programming the magnetoresistive memory device. The current needed to induce a given magnetic field is reduced by a factor of N, wherein N is a whole number greater than or equal to two. To further decrease the current, the conductive line is cladded with a ferromagnetic region to increase the magnetic field proximate to the magnetoresistive random access memory device.
摘要翻译：一种用于对包含由电绝缘层分隔的N个金属层的磁阻存储元件进行编程的导线，其中所述位导电位于靠近磁阻存储器件的位置，并且流过引起用于编程磁阻存储器件的磁场的电流。诱导给定磁场所需的电流减小了N倍，其中N是大于或等于2的整数。为了进一步降低电流，导电线被铁磁区域包层以增加靠近磁阻随机存取存储器件的磁场。

44. 发明授权

US08508004B2 Magnetic element having reduced current density 有权
标题翻译：具有降低的电流密度的磁性元件
公开(公告)号：US08508004B2
公开(公告)日：2013-08-13
申请号：US12952661
申请日：2010-11-23
申请人： Nicholas D. Rizzo , Phillip G. Mather
发明人： Nicholas D. Rizzo , Phillip G. Mather
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.
摘要翻译：存储器件包括固定磁性层，固定磁性层上的隧道势垒层和形成在隧道势垒层上的自由磁性结构，其中自由磁性结构具有弱磁耦合的层或子层。因此，可以使用低编程电压来避免隧道势垒击穿，并且可以使用小通道晶体管来节省管芯空间。

45. 发明申请

US20120122247A1 ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE 有权
标题翻译：包括磁电阻记忆体装置的电子装置和形成电子装置的方法
公开(公告)号：US20120122247A1
公开(公告)日：2012-05-17
申请号：US13358231
申请日：2012-01-25
申请人： Phillip G. Mather , Sanjeev Aggarwal , Brian R. Butcher , Renu W. Dave , Frederick B. Mancoff , Nicholas D. Rizzo
发明人： Phillip G. Mather , Sanjeev Aggarwal , Brian R. Butcher , Renu W. Dave , Frederick B. Mancoff , Nicholas D. Rizzo
IPC分类号： H01L21/20
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01L43/12
摘要： A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer.
摘要翻译：形成电子器件的工艺可以包括形成包括隧道势垒层的堆叠。隧道阻挡层可以具有大于化学计量比的金属原子与氧原子的比例，其中该比率具有特定值。该方法还可以包括形成具有能够吸收氧的组成的吸气层，以及在吸气层上沉积绝缘层。该方法还可以包括将绝缘层暴露于至少约60℃的温度。在一个实施方案中，在这种曝光之后，将一部分吸气层转化为绝缘材料。在另一个实施例中，电子设备可以包括磁性隧道结和位于另一绝缘层的开口内的相邻绝缘层。

46. 发明授权

US08119424B2 Electronic device including a magneto-resistive memory device and a process for forming the electronic device 有权
标题翻译：包括磁阻存储器件的电子器件和用于形成电子器件的工艺
公开(公告)号：US08119424B2
公开(公告)日：2012-02-21
申请号：US11864409
申请日：2007-09-28
申请人： Phillip G. Mather , Sanjeev Aggarwal , Brian R. Butcher , Renu W. Dave , Frederick B. Mancoff , Nicholas D. Rizzo
发明人： Phillip G. Mather , Sanjeev Aggarwal , Brian R. Butcher , Renu W. Dave , Frederick B. Mancoff , Nicholas D. Rizzo
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01L43/12
摘要： A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer.
摘要翻译：形成电子器件的工艺可以包括形成包括隧道势垒层的堆叠。隧道阻挡层可以具有大于化学计量比的金属原子与氧原子的比例，其中该比率具有特定值。该方法还可以包括形成具有能够吸收氧的组成的吸气层，以及在吸气层上沉积绝缘层。该方法还可以包括将绝缘层暴露于至少约60℃的温度。在一个实施方案中，在这种曝光之后，将一部分吸气层转化为绝缘材料。在另一个实施例中，电子设备可以包括磁性隧道结和位于另一绝缘层的开口内的相邻绝缘层。

47. 发明授权

US07833806B2 Structure and method for fabricating cladded conductive lines in magnetic memories 有权
标题翻译：在磁存储器中制造包覆导电线的结构和方法
公开(公告)号：US07833806B2
公开(公告)日：2010-11-16
申请号：US12363404
申请日：2009-01-30
申请人： Kenneth H. Smith , Nicholas D. Rizzo , Sanjeev Aggarwal , Anthony Ciancio , Brian R. Butcher , Kelly Wayne Kyler
发明人： Kenneth H. Smith , Nicholas D. Rizzo , Sanjeev Aggarwal , Anthony Ciancio , Brian R. Butcher , Kelly Wayne Kyler
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , H01L23/53238 , H01L2924/0002 , Y10S438/978 , H01L2924/00
摘要： A method of forming a magnetoelectronic device includes forming a dielectric material (114) surrounding a magnetic bit (112), etching the dielectric material (114) to define an opening (122) over the magnetic bit (112) without exposing the magnetic bit (112), the opening (122) having a sidewall, depositing a blanket layer (132) of cladding material over the dielectric material (118), including over the sidewall, removing by a sputtering process the blanket layer (132) in the bottom of the opening (122) and the dielectric material (124) over the magnetic bit (112), and forming a conductive material (146) within the opening (122) to form a bit line (154). This process reduces errors caused by process irregularities such as edges of the bits (112) protruding and thereby causing defects in the cladding layer (132) formed thereover. A bit line or digit line so formed may optionally be tapered at the ends (182, 184) to prevent magnetic reversal of the bit line magnetic moment that otherwise may occur due to external magnetic fields.
摘要翻译：一种形成磁电子器件的方法包括形成围绕磁头（112）的电介质材料（114），蚀刻电介质材料（114）以在磁头（112）上方限定开口（122），而不暴露磁头 112），所述开口（122）具有侧壁，在所述电介质材料（118）上沉积包覆材料的覆盖层（132），包括在所述侧壁上方，通过溅射工艺去除所述绝缘层所述开口（122）和所述电介质材料（124）在所述磁头（112）上方，并且在所述开口（122）内形成导电材料（146）以形成位线（154）。该过程减少了诸如位（112）的边缘突出的过程不规则性引起的错误，从而在其上形成的包层（132）中产生缺陷。如此形成的位线或数字线可以可选地在端部（182,184）处是锥形的，以防止由于外部磁场而可能发生的位线磁矩的磁性反转。

48. 发明授权

US07502253B2 Spin-transfer based MRAM with reduced critical current density 有权
标题翻译：具有降低临界电流密度的自旋转移MRAM
公开(公告)号：US07502253B2
公开(公告)日：2009-03-10
申请号：US11511691
申请日：2006-08-28
申请人： Nicholas D. Rizzo
发明人： Nicholas D. Rizzo
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic random access memory device include a spin torque MRAM cell (100) having a reduced switching current (Ic) wherein standard materials may be used for a free layer (108). A fixed magnetic element (112) polarizes electrons passing therethrough, and the free magnetic element (108) having a first plane anisotropy comprises a first magnetization (130) whose direction is varied by the spin torque of the polarized electrons. An insulator (110) is positioned between the fixed magnetic element (112) and the free magnetic element (108), and a keeper layer (104) positioned contiguous to the free magnetic element (108) and having a second plane anisotropy orthogonal to the first plane anisotropy, reduces the first plane anisotropy and hence reduces the spin torque switching current (Ic). The keeper layer (104) may include alternating synthetic antiferromagnetic layers (132, 134) of magnetization approximately equal in magnitude and opposite in direction.
摘要翻译：磁性随机存取存储器件包括具有减小的开关电流（Ic）的自旋转矩MRAM单元（100），其中标准材料可用于自由层（108）。固定磁性元件（112）使通过其的电子偏振，具有第一平面各向异性的自由磁性元件（108）包括其方向由极化电子的自旋转矩变化的第一磁化（130）。绝缘体（110）位于固定磁性元件（112）和自由磁性元件（108）之间，以及保持层（104），其邻接于自由磁性元件（108）定位并具有与第二平面各向异性垂直于第一平面各向异性，降低了第一平面各向异性，从而降低了自旋转矩开关电流（Ic）。保持层（104）可以包括交替的合成反铁磁层（132,134），其大小在大小上相等并且在方向上相反。

49. 发明申请

US20080258247A1 SPIN-TRANSFER MRAM STRUCTURE AND METHODS 有权
标题翻译：旋转MRAM结构和方法
公开(公告)号：US20080258247A1
公开(公告)日：2008-10-23
申请号：US11736960
申请日：2007-04-18
申请人： Frederick B. Mancoff , Nicholas D. Rizzo
发明人： Frederick B. Mancoff , Nicholas D. Rizzo
IPC分类号： H01L29/82 , H01L21/70
CPC分类号： H01L43/08 , G11C11/16 , H01L43/12
摘要： A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.
摘要翻译：自旋转移MRAM位包括位于一对自旋偏振器之间的自由磁体层，其中至少一个自旋偏振器包括未固化的合成反铁磁体（SAF）。 SAF可以包括由耦合层分开的两个反平行固定磁体层。为了提高可制造性，SAF的层可以是非对称的（例如，具有不同的厚度或不同的固有各向异性），以有助于在退火期间实现适当的对准。 SAF的总磁矩可能大于自由磁体层的总磁矩。

50. 发明申请

US20080049488A1 Spin-transfer based MRAM with reduced critical current density 有权
标题翻译：具有降低临界电流密度的自旋转移MRAM
公开(公告)号：US20080049488A1
公开(公告)日：2008-02-28
申请号：US11511691
申请日：2006-08-28
申请人： Nicholas D. Rizzo
发明人： Nicholas D. Rizzo
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory device comprises a spin torque MRAM cell (100) having a reduced switching current (Ic) wherein standard materials may be used for a free layer (108). A fixed magnetic element (112) polarizes electrons passing therethrough, and the free magnetic element (108) having a first plane anisotropy comprises a first magnetization (130) whose direction is varied by the spin torque of the polarized electrons. An insulator (110) is positioned between the fixed magnetic element (112) and the free magnetic element (108), and a keeper layer (104) positioned contiguous to the free magnetic element (108) and having a second plane anisotropy orthogonal to the first plane anisotropy, reduces the first plane anisotropy and hence reduces the spin torque switching current (Ic). The keeper layer (104) may comprise alternating synthetic antiferromagnetic layers (132, 134) of magnetization approximately equal in magnitude and opposite in direction.
摘要翻译：磁性随机存取存储器件包括具有降低的开关电流（I SUB）的自旋转矩MRAM单元（100），其中标准材料可用于自由层（108）。固定磁性元件（112）使通过其的电子偏振，具有第一平面各向异性的自由磁性元件（108）包括其方向由极化电子的自旋转矩变化的第一磁化（130）。绝缘体（110）位于固定磁性元件（112）和自由磁性元件（108）之间，以及保持层（104），其邻接于自由磁性元件（108）定位并具有与第二平面各向异性垂直于第一平面各向异性，降低了第一平面各向异性，从而降低了自旋扭矩切换电流（I C c）。保持层（104）可以包括交变的合成反铁磁层（132,134），其大小等于大小相等并且在方向上相反。

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