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41. 发明授权

US06819815B1 Method and apparatus for indirect adjustment of optical switch reflectors 有权
标题翻译：用于间接调整光开关反射器的方法和装置
公开(公告)号：US06819815B1
公开(公告)日：2004-11-16
申请号：US10015539
申请日：2001-12-12
申请人： Charles Corbalis , John E. Bowers , Shifu Yuan , David Welsh , Roger J. Helkey
发明人： Charles Corbalis , John E. Bowers , Shifu Yuan , David Welsh , Roger J. Helkey
IPC分类号： G02B626
CPC分类号： G02B6/3588 , G02B6/3512 , G02B6/3556 , G02B6/3586 , G02B6/4246
摘要： An optical switch embodiment includes a switching array of arranged to accomplish switching of input light beams to any of a plurality of output channels and an array of beam monitoring elements for indirectly measuring and providing information used for adjusting output beams. The beam monitoring element further includes means for measuring the angular misalignment and the positional misalignment of a monitor beam and adjusting the reflectors based on monitor beam information such that optical beams are output from the switch having the desired optical characteristics, such as optimized power. Another optical switch embodiment includes an array of rhomboid prism assemblies positioned to receive the output beams from the switching array and such that the beams are split into substantially parallel working and monitor beams. Whereby the working beams pass into the plurality of output channels and the monitor beams pass into the plurality of beam monitoring elements where they are measured to provide information for adjusting the angular misalignment and the positional misalignment of the working beam.
摘要翻译：光开关实施例包括一个开关阵列，其被设置成实现将输入光束切换到多个输出通道中的任一个的光束监视元件的阵列，用于间接测量和提供用于调整输出光束的信息。光束监测元件还包括用于测量监视光束的角度偏移和位置偏移以及基于监视光束信息调整反射器的装置，使得光束从具有所需光学特性（例如优化功率）的开关输出。另一光开关实施例包括一组菱形棱镜组件，其定位成接收来自开关阵列的输出光束，并且使得光束被分成基本上平行的工作和监视光束。其中工作光束进入多个输出通道，监视光束进入多个光束监测元件，在那里它们被测量以提供用于调整工作光束的角度偏移和位置偏移的信息。

42. 发明授权

US06465803B1 Semiconductor hetero-interface photodetector 失效
标题翻译：半导体异质界面光电探测器
公开(公告)号：US06465803B1
公开(公告)日：2002-10-15
申请号：US09597970
申请日：2000-06-20
申请人： John E. Bowers , Aaron R. Hawkins
发明人： John E. Bowers , Aaron R. Hawkins
IPC分类号： H01L2906
CPC分类号： H01L31/02161 , H01L27/1446 , H01L31/09 , H01L31/1075
摘要： By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III—V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.
摘要翻译：通过使用晶片熔合，可以实现与其他电子器件集成的用于光电探测器和光电探测器的各种结构。使用硅作为倍增区域和III-V族化合物作为吸收区域产生高效且针对具体应用而定制的光电探测器。产生响应于光谱的不同区域或具有更高效率的器件。

43. 发明授权

US5977604A Buried layer in a semiconductor formed by bonding 失效
标题翻译：通过键合形成的半导体中的埋层
公开(公告)号：US5977604A
公开(公告)日：1999-11-02
申请号：US612687
申请日：1996-03-08
申请人： Dubravko Ivan Babic , John E. Bowers
发明人： Dubravko Ivan Babic , John E. Bowers
IPC分类号： H01L21/331 , H01L31/18 , H01L31/00 , H01L29/06
CPC分类号： H01L31/18 , H01L29/66234 , H01L29/66242 , H01L29/66318 , H01S5/18341 , H01S5/0207 , H01S5/0215 , H01S5/0217 , H01S5/18308 , H01S5/18316 , H01S5/18369 , H01S5/1838 , H01S5/2072
摘要： Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.
摘要翻译：掩埋层形成在半导体内。金属或绝缘掩埋层在半导体衬底内产生几微米。掩埋层可以通过使用导电材料来形成掩埋层而将电流限制在埋层本身。掩埋层还可以通过在掩埋层内部使用绝缘材料或通过在材料内留下产生的空隙将电流限制在半导体的指定区域。掩埋层在半导体垂直腔激光器（VCL）的构造中是有用的。掩埋隔离层将电流限制在窄的有源区域，从而提高VCL的效率。掩埋层也可用于制造分立器件，例如二极管，晶体管和光电探测器，以及制造集成电路。

44. 发明授权

US5799024A Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers 失效
标题翻译：使用喇叭形锁模半导体激光器和光放大器生成高功率光脉冲
公开(公告)号：US5799024A
公开(公告)日：1998-08-25
申请号：US772129
申请日：1996-12-19
申请人： John E. Bowers , Alan Mar , Roger J. Helkey , Judy Karin
发明人： John E. Bowers , Alan Mar , Roger J. Helkey , Judy Karin
IPC分类号： H01S5/026 , H01S5/06 , H01S5/065 , H01S5/10 , H01S5/14 , H01S5/50 , H01S3/113
CPC分类号： H01S5/14 , H01S5/065 , H01S5/50 , H01S5/026 , H01S5/0601 , H01S5/0609 , H01S5/1064
摘要： The mode-locked laser with improved pulse power output can be realized by combining an optical oscillator with a flared CW or modulated gain amplifier. An optical filter or isolator may be disposed between the oscillator and amplifier to avoid feedback of spontaneous noise. A two-segment laser is devised by providing a flared gain section between a modulated gain section and an absorber section within the integrated semiconductor laser. The flared section may taper from a larger modulated gain section to a smaller cross section absorber section or vice versa. Various combinations of absorber sections coupled to modulated gain sections by CW gain or passive flared gain sections may be combined with various arrangements of reflectors and tapered CW gain amplifiers are cascades of such amplifiers and modulated gain pairs. A saturable absorber may be used in a two-segment laser in which the absorber is bleachable and has a characteristic temperature which is increased during short time periods so that a passive gain is realized by the return pulse traveling through the saturable absorber provided that the returning pulse is timed to coincide with the temporal gain realized in the absorber.
摘要翻译：具有改善的脉冲功率输出的锁模激光器可以通过将光学振荡器与扩展的CW或调制增益放大器组合来实现。滤光器或隔离器可以设置在振荡器和放大器之间以避免自发噪声的反馈。通过在集成半导体激光器内的调制增益部分和吸收体部分之间提供扩张增益部分来设计双段激光器。扩口部分可以从较大的调制增益部分逐渐变细到较小的横截面吸收体部分，反之亦然。通过CW增益或被动扩张增益部分耦合到调制增益部分的吸收部分的各种组合可以与反射器的各种布置组合，并且锥形CW增益放大器是这种放大器和调制增益对的级联。可饱和吸收器可以用在两段激光器中，其中吸收器是可漂白的并且具有在短时间段内增加的特征温度，使得通过可饱和吸收器行进的返回脉冲实现无源增益，只要返回脉冲定时与吸收器中实现的时间增益一致。

45. 发明授权

US4479701A Dual coupler fiber optic recirculating memory 失效
标题翻译：双耦合光纤再循环存储器
公开(公告)号：US4479701A
公开(公告)日：1984-10-30
申请号：US326215
申请日：1981-12-01
申请人： Steven A. Newton , John E. Bowers , Herbert J. Shaw
发明人： Steven A. Newton , John E. Bowers , Herbert J. Shaw
IPC分类号： G11C21/00 , G01S7/285 , G02B6/00 , G02B6/28 , G02B5/172
CPC分类号： G02B6/29338 , G02B6/2821 , G02B6/2861 , G02B6/29332
摘要： A fiber optic recirculating memory is disclosed which utilizes dual couplers to form a splice-free recirculating memory device from a length of single mode optical fiber forming a loop which acts as a delay line and a second length of single mode optical fiber which provides an input end and an output end for the device. A single signal supplied as an input to the device will result in a series of output signals identical to the input signal, although at smaller, decreasing amplitudes; the invention prevents the first output signal from being substantially larger than the rest of the output signals, thus eliminating the need for protective circuitry on the output end or the rejection of the first output signal. In addition to being useful as a recirculating memory device for use in a system where data is generated at a rate faster than it can be accepted by a data processor, the invention may be used as a tap filter to pass a selected fundamental frequency and its harmonics, and to attenuate all other frequencies.
摘要翻译：公开了一种光纤再循环存储器，其利用双耦合器从一单一模式光纤的长度形成无拼接的循环存储器件，该单模光纤形成用作延迟线的环路和第二长度的单模光纤，其提供输入端和输出端。作为输入到设备的单个信号将产生与输入信号相同的一系列输出信号，尽管幅度较小，幅度较小。本发明防止第一输出信号显着地大于其余的输出信号，从而消除了在输出端上对保护电路的需要或第一输出信号的抑制。除了用作在数据以比数据处理器可以接受的速度更快的速度生成数据的系统中有用的本发明之外，本发明可以用作抽头滤波器以通过选定的基频，并且其谐波，并衰减所有其他频率。

46. 发明授权

US08994004B2 Hybrid silicon optoelectronic device and method of formation 有权
标题翻译：混合硅光电器件及其形成方法
公开(公告)号：US08994004B2
公开(公告)日：2015-03-31
申请号：US13359842
申请日：2012-01-27
申请人： John E. Bowers
发明人： John E. Bowers
IPC分类号： H01L31/0232 , B82Y20/00 , H01L31/0304 , H01L31/0352 , H01L31/167
CPC分类号： H01L31/0232 , B82Y20/00 , H01L31/02327 , H01L31/0304 , H01L31/035236 , H01L31/167 , Y02E10/544 , Y02P70/521
摘要： Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.
摘要翻译：公开了包括光电探测器的光检测器和集成电路。根据本发明的光电检测器包括驻留在第一衬底上的绝缘体上硅（SOI）结构，所述SOI结构包括无源波导和结合到SOI结构的III-V结构，III-V结构包括量子阱区，耦合到量子阱区和与无源波导相邻的SOI结构的混合波导，以及耦合到量子阱区的台面，其中当光通过混合波导时，量子阱区基于检测到的光检测光并产生电流。

47. 发明申请

US20120199932A1 LOW NOISE, STABLE AVALANCHE PHOTODIODE 审中-公开
标题翻译：低噪音，稳定的AVALANCHE PHOTODIODE
公开(公告)号：US20120199932A1
公开(公告)日：2012-08-09
申请号：US13501572
申请日：2010-10-07
申请人： John E. Bowers
发明人： John E. Bowers
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： Quantum avalanche photodiodes are disclosed. An avalanche photodiode in accordance with one or more embodiments of the present invention comprises an absorption region having a first dopant type, a collection region, having a second dopant type, and a multiplication region, coupled between the absorption region and the collection region, wherein a distance of the multiplication region between the absorption region and the collection region is a plurality of avalanche lengths.
摘要翻译：公开了量子雪崩光电二极管。根据本发明的一个或多个实施例的雪崩光电二极管包括具有第一掺杂剂类型的吸收区域，具有第二掺杂剂类型的收集区域和耦合在吸收区域和收集区域之间的倍增区域，其中吸收区域和收集区域之间的乘法区域的距离是多个雪崩长度。

48. 发明申请

US20100128576A1 INTEGRATED MAGNETIC RECORDING HEAD AND NEAR FIELD LASER 审中-公开
标题翻译：集成磁记录头和近场激光
公开(公告)号：US20100128576A1
公开(公告)日：2010-05-27
申请号：US12275980
申请日：2008-11-21
申请人： Alexander W. Fang , John E. Bowers , Gregory A. Fish
发明人： Alexander W. Fang , John E. Bowers , Gregory A. Fish
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/455 , G11B5/6088 , G11B7/122 , G11B7/127 , G11B7/1387 , G11B11/10536 , G11B11/1058 , G11B2005/0005 , G11B2005/001 , G11B2005/0021
摘要： Apparatuses and methods for making and using laser-assisted magnetic recording devices. A slider for use in a magnetic recording apparatus in accordance with one or more embodiments of the present invention comprises a magnetic recording element having a first pole and a second pole, a magnetic reader, and a laser resonator integrally formed on said slider, having an optical emission point of said resonator positioned between the first pole and the second pole of the magnetic recording element; wherein the laser resonator comprises a semiconductor gain media positioned between a first reflector and a near field optical element having a nonzero optical reflection to the semiconductor gain media.
摘要翻译：用于制造和使用激光辅助磁记录装置的装置和方法。根据本发明的一个或多个实施例的用于磁记录装置的滑动件包括具有第一极和第二极的磁记录元件，磁读取器和整体地形成在所述滑块上的激光谐振器，具有所述谐振器的光发射点位于磁记录元件的第一极和第二极之间; 其中激光谐振器包括位于第一反射器和具有对半导体增益介质的非零光学反射的近场光学元件之间的半导体增益介质。

49. 发明申请

US20090016399A1 HYBRID SILICON EVANESCENT PHOTODETECTORS 有权
标题翻译：混合硅代替光电转换器
公开(公告)号：US20090016399A1
公开(公告)日：2009-01-15
申请号：US11734559
申请日：2007-04-12
申请人： John E. Bowers
发明人： John E. Bowers
IPC分类号： H01S5/026 , H01L31/02
CPC分类号： H01L31/0232 , B82Y20/00 , H01L31/02327 , H01L31/0304 , H01L31/035236 , H01L31/167 , Y02E10/544 , Y02P70/521
摘要： Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.
摘要翻译：公开了包括光电探测器的光检测器和集成电路。根据本发明的光电检测器包括驻留在第一衬底上的绝缘体上硅（SOI）结构，所述SOI结构包括无源波导和结合到SOI结构的III-V结构，III-V结构包括量子阱区，耦合到量子阱区和与无源波导相邻的SOI结构的混合波导，以及耦合到量子阱区的台面，其中当光通过混合波导时，量子阱区基于检测到的光检测光并产生电流。

50. 发明授权

US06403874B1 High-efficiency heterostructure thermionic coolers 有权
标题翻译：高效异质结构热离子冷却器
公开(公告)号：US06403874B1
公开(公告)日：2002-06-11
申请号：US09441787
申请日：1999-11-17
申请人： Ali Shakouri , John E. Bowers
发明人： Ali Shakouri , John E. Bowers
IPC分类号： H01L3534
CPC分类号： H01L29/861 , H01J45/00 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer bandedge is at least kBT higher than the Fermi level of the semiconductor layer, which allows only selected, “hot” electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译：异质结构热离子冷却器和用于制造热离子冷却器的方法，使用放置在两层材料之间的用于n型材料的变化的导带的阻挡层或用于p型材料的变化的带状带。阻挡层带边缘至少比半导体层的费米能级高kBT，其仅允许穿过势垒的选定的“热”电子或足够高能量的电子。阻挡层被构造成具有内部电场，使得使其超过初始屏障的电子被辅助到行进到阳极。一旦电子下降到阳极的能级，它们就会失去晶格的能量，从而在阳极处加热晶格。阻挡层的势垒高度足够高以防止电子沿相反方向传播。

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