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1. 发明申请

US20100128576A1 INTEGRATED MAGNETIC RECORDING HEAD AND NEAR FIELD LASER 审中-公开
标题翻译：集成磁记录头和近场激光
公开(公告)号：US20100128576A1
公开(公告)日：2010-05-27
申请号：US12275980
申请日：2008-11-21
申请人： Alexander W. Fang , John E. Bowers , Gregory A. Fish
发明人： Alexander W. Fang , John E. Bowers , Gregory A. Fish
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/455 , G11B5/6088 , G11B7/122 , G11B7/127 , G11B7/1387 , G11B11/10536 , G11B11/1058 , G11B2005/0005 , G11B2005/001 , G11B2005/0021
摘要： Apparatuses and methods for making and using laser-assisted magnetic recording devices. A slider for use in a magnetic recording apparatus in accordance with one or more embodiments of the present invention comprises a magnetic recording element having a first pole and a second pole, a magnetic reader, and a laser resonator integrally formed on said slider, having an optical emission point of said resonator positioned between the first pole and the second pole of the magnetic recording element; wherein the laser resonator comprises a semiconductor gain media positioned between a first reflector and a near field optical element having a nonzero optical reflection to the semiconductor gain media.
摘要翻译：用于制造和使用激光辅助磁记录装置的装置和方法。根据本发明的一个或多个实施例的用于磁记录装置的滑动件包括具有第一极和第二极的磁记录元件，磁读取器和整体地形成在所述滑块上的激光谐振器，具有所述谐振器的光发射点位于磁记录元件的第一极和第二极之间; 其中激光谐振器包括位于第一反射器和具有对半导体增益介质的非零光学反射的近场光学元件之间的半导体增益介质。

2. 发明授权

US08559478B2 Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators 有权
公开(公告)号：US08559478B2
公开(公告)日：2013-10-15
申请号：US12355628
申请日：2009-01-16
申请人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
发明人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
IPC分类号： H01S5/026 , H01L27/14
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

3. 发明申请

US20130195137A1 METHOD FOR ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER 有权
标题翻译：电力泵浦半导体激光器的方法
公开(公告)号：US20130195137A1
公开(公告)日：2013-08-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： H01S5/30 , H01S5/34
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译：一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。公开和要求保护其他实施例。

4. 发明授权

US08767792B2 Method for electrically pumped semiconductor evanescent laser 有权
标题翻译：电泵浦半导体ev逝激光的方法
公开(公告)号：US08767792B2
公开(公告)日：2014-07-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： H01S3/091 , H01S3/094
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译：一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。公开和要求保护其他实施例。

5. 发明申请

US20080002929A1 Electrically pumped semiconductor evanescent laser 审中-公开
标题翻译：电泵浦半导体ev逝激光器
公开(公告)号：US20080002929A1
公开(公告)日：2008-01-03
申请号：US11479459
申请日：2006-06-30
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： G02B6/12 , G02B6/26 , H01S3/097
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
摘要翻译：一种电泵浦混合ev逝激光的装置和方法。作为一个示例，设备包括设置在硅中的光波导。有源半导体材料设置在光波导上，限定光波导和有源半导体材料之间的渐逝耦合接口，使得由光波导引导的光学模式与光波导和有源半导体材料重叠。通过有源半导体材料限定电流注入路径，并且至少部分地与光学模式重叠，使得响应于沿着沿着电流注入路径的电流注入而响应于有源半导体材料的电泵浦产生光而至少部分地与光学模式。

6. 发明申请

US20090245298A1 HYBRID SILICON LASER-QUANTUM WELL INTERMIXING WAFER BONDED INTEGRATION PLATFORM FOR ADVANCED PHOTONIC CIRCUITS WITH ELECTROABSORPTION MODULATORS 有权
标题翻译：混合硅激光器与电解质调制器相结合的先进光电子电路
公开(公告)号：US20090245298A1
公开(公告)日：2009-10-01
申请号：US12355628
申请日：2009-01-16
申请人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
发明人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
IPC分类号： H01S5/026 , H01L33/00 , H01S3/10
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
摘要翻译：公开了硅上的光子集成电路。通过将作为有源区的化合物半导体材料的晶片结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。根据本发明的一个或多个实施例的硅激光器混合集成器件包括绝缘体上硅衬底，其包括顶表面中的至少一个波导，以及包括增益层的化合物半导体衬底，化合物半导体衬底进行量子阱混合处理，其中化合物半导体衬底的上表面结合到绝缘体上硅衬底的顶表面上。

7. 发明申请

US20100096665A1 InGaAsSbN PHOTODIODE ARRAYS 有权
标题翻译： InGaAsSbN光电子阵列
公开(公告)号：US20100096665A1
公开(公告)日：2010-04-22
申请号：US12254634
申请日：2008-10-20
申请人： Michael MacDougal , Jonathan Geske , John E. Bowers
发明人： Michael MacDougal , Jonathan Geske , John E. Bowers
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译：公开了使用晶格匹配的光吸收层制成的检测器的实施例。根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度并且名义上与磷化铟基板晶格匹配。

8. 发明授权

US07142744B2 Wavelength power equalization by attenuation in an optical switch 有权
公开(公告)号：US07142744B2
公开(公告)日：2006-11-28
申请号：US11067030
申请日：2005-02-24
申请人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
发明人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
IPC分类号： G02B6/35 , G02B6/00
CPC分类号： G02B6/3588 , G02B6/266 , G02B6/3512 , G02B6/3518 , G02B6/3556 , G02B6/356 , G02B6/3594 , H04Q11/0005 , H04Q2011/0024 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0039 , H04Q2011/0049
摘要： A method for equalizing optical signal power in a group of optical signals transmitted through an optical switch in an optical transmission system. In one embodiment a group of optical signals is input into an optical switch having at least one movable mirror array with a plurality of reflectors formed thereon, the optical beam being directed onto a selected at least one reflector and wherein attenuating the optical beam is accomplished by controllably detuning at least one of the selected at least one reflector to attenuate the optical beam.

9. 发明授权

US06323414B1 Heterostructure thermionic coolers 有权
标题翻译：异质结构热离子冷却器
公开(公告)号：US06323414B1
公开(公告)日：2001-11-27
申请号：US09548011
申请日：2000-04-12
申请人： Ali Shakouri , John E. Bowers
发明人： Ali Shakouri , John E. Bowers
IPC分类号： H01L3530
CPC分类号： H01L29/861 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow “hot” electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译：异质结构热离子冷却器和用于制造热离子冷却器的方法，使用放置在两层材料之间的用于n型材料的变化的导带的阻挡层或用于p型材料的变化的带状带。阻挡层具有足够高的阻挡层，用于冷侧仅允许穿过屏障的“热”电子或足够高能量的电子。阻挡层被构造成具有内部电场，使得使其超过初始屏障的电子被辅助到行进到阳极。一旦电子下降到阳极的能级，它们就会失去晶格的能量，从而在阳极处加热晶格。阻挡层的势垒高度足够高以防止电子沿相反方向传播。

10. 发明授权

US06277696B1 Surface emitting laser using two wafer bonded mirrors 失效
标题翻译：使用两个晶片粘合镜的表面发射激光
公开(公告)号：US06277696B1
公开(公告)日：2001-08-21
申请号：US08751038
申请日：1996-11-15
申请人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
发明人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
IPC分类号： H01L2120
CPC分类号： H01S5/1838 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/2063
摘要： The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.
摘要翻译：本发明提供一种在所需波长范围内具有高增益和高反射率的垂直腔表面发射激光器以及良好的导热和导热性。激光器结构由第一反射镜区域，第二反射镜区域和位于第一和第二镜像区域之间的有源区域组成。与先前的VCSEL不同，有源区域融合到第一镜像区域和第二镜像区域两者。这允许激光设计者通过允许为第一镜面区域，第二镜面区域和有源区域选择不同的材料来优化所需波长范围的激光器性能。

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