专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US4104684A Rotary head type magnetic video recording and reproducing system 失效
标题翻译：旋转头型磁视频录像机
公开(公告)号：US4104684A
公开(公告)日：1978-08-01
申请号：US686396
申请日：1976-05-14
申请人： Noboru Wakami , Masahiro Deguchi
发明人： Noboru Wakami , Masahiro Deguchi
IPC分类号： G11B15/18 , G11B15/60 , G11B15/46 , G11B15/26
CPC分类号： G11B15/1808 , G11B15/602
摘要： A recorded signal reproducing system includes a signal generator circuit which produces a tracking control signal in response to an output from a detection circuit which detects that a difference between an output of a peak hold circuit which holds a maximum amplitude of an envelope of a reproduced signal from a rotary head for a relatively long period and an output of an envelope detection circuit exceeds a predetermined threshold. The tracking control signal is used to control the relative positional relationship between the rotary head and a magnetic tape for controlling tracking during the playback operation.
摘要翻译：记录信号再现系统包括信号发生器电路，其响应于来自检测电路的输出产生跟踪控制信号，该检测电路检测到保持重放信号的包络的最大幅度的峰值保持电路的输出之间的差从旋转头相对长的时间段和包络检测电路的输出超过预定阈值。跟踪控制信号用于控制在回放操作期间用于控制跟踪的旋转磁头和磁带之间的相对位置关系。

42. 发明授权

US07736542B2 Electron-emitting material, manufacturing method therefor and electron-emitting element and image displaying device employing same 有权
标题翻译：电子发射材料及其制造方法和电子发射元件以及使用它的图像显示装置
公开(公告)号：US07736542B2
公开(公告)日：2010-06-15
申请号：US11047656
申请日：2005-02-02
申请人： Motoshi Shibata , Masahiro Deguchi , Akira Taomoto , Toyokazu Ozaki
发明人： Motoshi Shibata , Masahiro Deguchi , Akira Taomoto , Toyokazu Ozaki
IPC分类号： H01B1/04 , B05D5/12
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： In the present invention an electron-emitting material is provided wherein the field emission initiation voltage or work function is smaller than that of conventional materials. That is, the present invention relates to an electron-emitting sheet material which is a material comprising a substrate 102 and a graphite sheet 101 laminated on the top of the substrate 102, wherein (1) the graphite sheet 101 has a layered structure of layers of graphenes consisting of a plurality of carbon hexagonal networks, (2) the graphenes are layered relative to one another so that the c-axial direction of each graphene is substantially perpendicular to the plane of the substrate 102, (3) the graphite sheet 101 is laminated on top of the substrate 102 so that the c-axial direction of each graphene is substantially perpendicular to the plane of the substrate 102, and (4) the graphite sheet 101 comprises an element other than carbon as a second element.
摘要翻译：在本发明中，提供了一种电子发射材料，其中场致发射电压或功函数小于常规材料。也就是说，本发明涉及一种电子发射片材料，它是一种材料，它是一种材料，它包括层叠在基片102顶部的基底102和石墨片101，其中（1）石墨片101具有层由多个碳六方网组成的石墨烯，（2）石墨烯相对于彼此层叠，使得每个石墨烯的c轴方向基本上垂直于基板102的平面，（3）石墨片101 层压在基板102的顶部上，使得每个石墨烯的c轴方向基本上垂直于基板102的平面，并且（4）石墨片101包括除碳之外的元素作为第二元件。

43. 发明授权

US07351443B2 Electron-emmiting material and manufacturing method therefor 失效
标题翻译：电子发射材料及其制造方法
公开(公告)号：US07351443B2
公开(公告)日：2008-04-01
申请号：US11134327
申请日：2005-05-23
申请人： Akira Taomoto , Toyokazu Ozaki , Masahiro Deguchi , Motoshi Shibata
发明人： Akira Taomoto , Toyokazu Ozaki , Masahiro Deguchi , Motoshi Shibata
IPC分类号： B05D5/12
CPC分类号： H01J9/022 , C01B32/20 , H01J1/30 , H01J1/304 , H01J2201/30446
摘要： The present invention provides an emissive material with excellent electron emission characteristics. In particular, the present invention relates to a method for manufacturing an emissive material consisting of oriented graphite, having a step of obtaining an oriented graphite comprising a second component and having pores on the inside by heat treating a polymer film in the presence of a second, non-carbon component.
摘要翻译：本发明提供具有优异的电子发射特性的发射材料。特别地，本发明涉及一种用于制造由取向石墨组成的发光材料的方法，该方法具有如下步骤：在第二组分存在下，通过热处理聚合物薄膜，获得包含第二组分并在内部具有孔的取向石墨，非碳成分。

44. 发明授权

US07003962B2 Thermoelectric transducer, a manufacturing method thereof, a cooling device using the same, and a method for controlling the cooling device 有权
标题翻译：热电换能器及其制造方法，使用该制冷方法的冷却装置以及冷却装置的控制方法
公开(公告)号：US07003962B2
公开(公告)日：2006-02-28
申请号：US11050812
申请日：2005-01-27
申请人： Masahiro Deguchi , Akira Taomoto , Toyokazu Ozaki , Motoshi Shibata
发明人： Masahiro Deguchi , Akira Taomoto , Toyokazu Ozaki , Motoshi Shibata
IPC分类号： F25B21/02
CPC分类号： H01L37/00 , F25B2321/003
摘要： A thermoelectric transducer comprising an emitter (1) for emitting electrons according to the action of heat or an electric field, a collector (2) disposed so as to face the emitter (1) and collect electrons emitted from the emitter (1), and an electron transport layer (3) held between the emitter (1) and the collector (2) to serve as a region for transferring the electrons emitted from the emitter (1), the electron transport layer (3) being a porous body having a mixed structure of a vapor phase and a solid phase, the entire solid phase which composes the porous body being composed of an insulating material, and the electrons emitted from the emitter traveling in the vapor phase by applying an electric potential to the collector (2) that is higher than that applied to the emitter (1).
摘要翻译：一种热电换能器，包括用于根据热或电场的作用发射电子的发射体（1），设置成面对发射极（1）并收集从发射极（1）发射的电子的集电极（2），以及保持在发射极（1）和集电极（2）之间的电子传输层（3），用作转移从发射极（1）发射的电子的区域，电子传输层（3）是具有气相和固相的混合结构，构成多孔体的整个固相由绝缘材料构成，并且从发射体发射的电子通过向集电体（2）施加电势，这高于施加到发射器（1）的那些。

45. 发明申请

US20050184635A1 Electron emission material, method of manufacturing the same, and electron emission element including the same 有权
标题翻译：电子发射材料及其制造方法以及包含该发光材料的电子发射元件
公开(公告)号：US20050184635A1
公开(公告)日：2005-08-25
申请号：US11102852
申请日：2005-04-11
申请人： Akira Taomoto , Masahiro Deguchi , Mitsuru Hashimoto , Toyokazu Ozaki , Motoshi Shibata
发明人： Akira Taomoto , Masahiro Deguchi , Mitsuru Hashimoto , Toyokazu Ozaki , Motoshi Shibata
IPC分类号： B01J20/20 , C01B3/00 , C01B31/02 , C09K5/08 , H01J1/14 , H01J1/304 , H01J9/02
CPC分类号： H01J1/304 , H01J9/025 , H01J2201/30446 , Y02E60/324
摘要： The present invention provides an electron emission material that is excellent in electron emission characteristics, a method of manufacturing the same, as well as an electron emission element. The method is a method of manufacturing an electron emission material including a carbon material obtained by baking a polymer film. In the method, a polyamic acid solution is prepared in which at least one metallic compound selected from a metal oxide and a metal carbonate is dispersed; the polyamic acid solution thus prepared is formed into a film and then is imidized to form a polyimide film including the metallic compound; and then the polyimide film thus formed is baked to form the carbon material. The electron emission material is formed so that it includes a carbon material, a protrusion having a concavity in its surface is formed at the surface of the carbon material, and the protrusion includes a metallic element.
摘要翻译：本发明提供电子发射特性优异的电子发射材料，其制造方法以及电子发射元件。该方法是制造包含通过烘焙聚合物膜获得的碳材料的电子发射材料的方法。在该方法中，制备分散至少一种选自金属氧化物和金属碳酸盐的金属化合物的聚酰胺酸溶液; 将如此制备的聚酰胺酸溶液形成膜，然后被酰亚胺化以形成包含金属化合物的聚酰亚胺膜; 然后将由此形成的聚酰亚胺膜烘烤以形成碳材料。电子发射材料形成为包括碳材料，在碳材料的表面上形成有表面凹陷的突起，突起包括金属元素。

46. 发明申请

US20050127814A1 Electron-emitting element, fluorescent light-emitting element, and image displaying device 失效
标题翻译：电子发射元件，荧光发光元件和图像显示装置
公开(公告)号：US20050127814A1
公开(公告)日：2005-06-16
申请号：US11028329
申请日：2005-01-04
申请人： Masahiro Deguchi , Masa-aki Suzuki , Akira Taomoto , Toyokazu Ozaki , Motoshi Shibata
发明人： Masahiro Deguchi , Masa-aki Suzuki , Akira Taomoto , Toyokazu Ozaki , Motoshi Shibata
IPC分类号： H01J1/304 , H01J1/312 , H01J9/02 , H01J31/12 , H01J1/62 , H01J63/04
CPC分类号： H01J1/304 , B82Y10/00 , H01J1/312 , H01J9/022 , H01J9/025 , H01J31/125 , H01J2329/00
摘要： A principal object of the present invention is to provide efficiently an electron-emitting element demonstrating performance equal or superior to that attained with the conventional technology. The electron-emitting element of the present invention comprises: (a) a substrate, (b) a lower electrode layer provided on the substrate, (c) an electron-emitting layer provided on the lower electrode layer, and (d) a control electrode layer so disposed as not to be in contact with the electron-emitting layer, wherein the electron-emitting layer comprises an electron-emitting material for emitting electrons in an electric field, (1) the electron-emitting material being a porous body having a 3D-network structure skeleton, (2) the 3D-network structure skeleton being composed on an inner portion and a surface portion, (3) the surface portion comprising an electron-emitting component, (4) the inner portion being occupied by (i) at least one of an insulating material and a semiinsulating material, (ii) an empty space, or (iii) at least one of an insulating material and a semiinsulating material and an empty space.
摘要翻译：本发明的主要目的是提供一种电子发射元件，该电子发射元件表现出与传统技术相同或优于其性能的电子发射元件。本发明的电子发射元件包括：（a）衬底，（b）设置在衬底上的下电极层，（c）设置在下电极层上的电子发射层，和（d）控制电极层，其设置成不与电子发射层接触，其中电子发射层包括用于在电场中发射电子的电子发射材料，（1）电子发射材料是多孔体，其具有 3D网络结构骨架，（2）在内部和表面部分上组成的3D网络结构骨架，（3）包括电子发射部件的表面部分，（4）内部被 i）绝缘材料和半绝缘材料中的至少一种，（ii）空的空间，或（iii）绝缘材料和半绝缘材料和空的空间中的至少一种。

47. 发明授权

US06903383B2 Semiconductor device having a high breakdown voltage for use in communication systems 失效
标题翻译：具有用于通信系统的高击穿电压的半导体器件
公开(公告)号：US06903383B2
公开(公告)日：2005-06-07
申请号：US10343097
申请日：2001-11-21
申请人： Toshiya Yokogawa , Asamira Suzuki , Masahiro Deguchi , Shigeo Yoshii , Hiroyuki Furuya
发明人： Toshiya Yokogawa , Asamira Suzuki , Masahiro Deguchi , Shigeo Yoshii , Hiroyuki Furuya
IPC分类号： H01L21/8252 , H01L27/06 , H01L29/20 , H01L29/778 , H03F3/60 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/2003 , H01L29/7785 , H03F3/601 , H03F2200/294
摘要： A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple δ-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple δ-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple δ-doped InAlAs layer (204) as a carrier supplying layer is reduced.
摘要翻译： HEMT具有InAlAs层（202），InGaAs层（203），由交替层叠的n型掺杂层（204a）和未掺杂层（204b）构成的多重δ掺杂InAlAs层（204） InP层（205），肖特基栅电极（210），源极电极（209a）和漏极电极（209b）。当电流在与InGaAs层（203）和多重δ掺杂的InAlAs层（204）之间的界面相邻的InGaAs层（203）的区域（沟道区）中流动时，可以增加关断状态下的击穿电压，同时抵抗通过作为载流子供给层的多个δ-掺杂InAlAs层（204）的载流子的移动。

48. 发明授权

US06692327B1 Method for producing electron emitting element 失效
标题翻译：用于制造包括两种材料的圆柱形电子发射元件的方法
公开(公告)号：US06692327B1
公开(公告)日：2004-02-17
申请号：US09480415
申请日：2000-01-11
申请人： Masahiro Deguchi , Makoto Kitabatake , Kanji Imai , Tomohiro Sekiguchi , Hideo Kurokawa , Keisuke Koga , Tetsuya Shiratori , Toru Kawase
发明人： Masahiro Deguchi , Makoto Kitabatake , Kanji Imai , Tomohiro Sekiguchi , Hideo Kurokawa , Keisuke Koga , Tetsuya Shiratori , Toru Kawase
IPC分类号： H01J902
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.
摘要翻译：电子发射元件包括基板，形成在基板上的阴极电极，与阴极相对设置的阳极电极，设置在阴极电极上的电子发射部件，设置在阴极电极和阴极电极之间的控制电极，阳极电极和绝缘层。电子发射构件包括具有孔的第一构件和填充孔的第二构件，其中第二构件比第一构件更可能发射电子。

49. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

50. 发明授权

US5814194A Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： C30B33/00 , C30B33/12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式