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    • 46. 发明申请
    • Edgewise orthodontic bracket with character base
    • 带字符基座的正四面正畸托架
    • US20050003320A1
    • 2005-01-06
    • US10848929
    • 2004-05-18
    • Ray FreemanGeorge KantorPaul SmithMichael StevensDaphne Upchurch
    • Ray FreemanGeorge KantorPaul SmithMichael StevensDaphne Upchurch
    • A61C7/14A61C7/16A61C3/00
    • A61C7/14A61C7/16
    • An improved edgewise orthodontic bracket is disclosed. In one embodiment, a bracket comprises a single pair of opposing T-shaped tie wings which define an archwire slot therebetween. Notches are provided on each of the mesial and distal sides of the center leg of each T-shaped tie wing for selectively receiving a ligating device. The notches are defined in the gingival/occlusal edges of the tie wings and comprise sloped portions that extend labially towards the archwire slot. Convex sidewall portions and convex floor portions are provided in the archwire slot adjacent to the notches. The body of the bracket is interconnected to a base that includes a continuous series of characters that serve as texturing to facilitate bonding of the bracket with a tooth. A discontinuous perimeter rail may be used at the edge of the base. A method for forming a bracket is also provided.
    • 公开了一种改进的沿边正畸托架。 在一个实施例中,支架包括在其间限定弓丝槽的单对相对的T形连接翼。 在每个T形连接翼的中心腿的每个中间和远侧上都设有切口,用于选择性地接收结扎装置。 切口被限定在连接翼的牙龈/咬合边缘中,并且包括倾斜的部分,其朝着弓丝槽口延伸。 凸出的侧壁部分和凸出的底部部分设置在与凹口相邻的弓丝槽中。 支架的主体与基座互连,底座包括连续的一系列字符,用作纹理,以便于支架与牙齿的粘合。 可以在基座的边缘使用不连续的周边轨道。 还提供了一种用于形成支架的方法。
    • 48. 发明授权
    • RF powered plasma enhanced chemical vapor deposition reactor and methods
    • 射频等离子体增强化学气相沉积反应器和方法
    • US6112697A
    • 2000-09-05
    • US26566
    • 1998-02-19
    • Sujit SharanGurtej S. SandhuPaul Smith
    • Sujit SharanGurtej S. SandhuPaul Smith
    • C23C16/509C23C16/505H01J37/32H01L21/205H05H1/46C23C16/00H05H1/00
    • H01J37/32174H01J37/32165
    • Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes. According to a preferred implementation, the power loop developed by the first RF power source is grounded interiorly of the chamber in a manner which reduces if not eliminates interference with other reactor components including the thermocouple.
    • 描述了等离子体增强化学气相沉积(PECVD)反应器及其实现方法。 在优选的实施方案中,PECVD反应器包括其中具有第一电极的处理室。 第二电极设置在室内并且被配置为支撑至少一个半导体工件用于处理。 第一RF电源将第一频率的RF功率提供给第一电极。 第二RF电源将第二频率的RF功率提供给第二电极。 优选地,第一和第二频率彼此不同,并且甚至更优选地,第一频率大于第二频率。 优选的反应器包括提供相对于一个电极的温度信息的热电偶。 根据优选实施方案,由第一RF电源开发的功率回路以室内接地,其方式如果不消除对包括热电偶的其它反应器部件的干扰,则减小。