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    • 2. 发明授权
    • RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
    • RF功率等离子体增强化学气相沉积反应器和实现等离子体增强化学气相沉积的方法
    • US06705246B2
    • 2004-03-16
    • US10047382
    • 2002-01-14
    • Sujit SharanGurtej S. SandhuPaul SmithMei Chang
    • Sujit SharanGurtej S. SandhuPaul SmithMei Chang
    • C23C1600
    • H01J37/32174C23C16/505H01J37/32082H01J37/321Y10S438/961
    • Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.
    • 描述了等离子体增强化学气相沉积(PECVD)反应器及其实现方法。 根据优选的实施方案,反应室包括与其可操作地相关联的第一和第二电极。 单个RF功率发生器连接到RF功率分配器,RF功率分配器分离RF功率并将分裂功率施加到第一和第二电极。 优选地,施加到两个电极的功率与不同于1:1的电极之间的功率比一致。 根据一个优选方面,反应室包括平行板PECVD系统的一部分。 根据另一个优选的方面,反应室包括感应线圈PECVD系统的一部分。 功率比优选是可调节的并且可以变化。 实现功率比调整的一种方式是改变各个电极表面积。 实现调整的另一种方式是提供能够改变输出功率的功率分配器。 还描述了PECVD处理方法。
    • 3. 发明授权
    • RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
    • RF功率等离子体增强化学气相沉积反应器和实现等离子体增强化学气相沉积的方法
    • US06235646B1
    • 2001-05-22
    • US09670982
    • 2000-09-26
    • Sujit SharanGurtej S. SandhuPaul SmithMei Chang
    • Sujit SharanGurtej S. SandhuPaul SmithMei Chang
    • H01L2131
    • H01J37/32174C23C16/505H01J37/32082H01J37/321Y10S438/961
    • Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.
    • 描述了等离子体增强化学气相沉积(PECVD)反应器及其实现方法。 根据优选的实施方案,反应室包括与其可操作地相关联的第一和第二电极。 单个RF功率发生器连接到RF功率分配器,RF功率分配器分离RF功率并将分裂功率施加到第一和第二电极两者。 优选地,施加到两个电极的功率与不同于1:1的电极之间的功率比一致。 根据一个优选方面,反应室包括平行板PECVD系统的一部分。 根据另一个优选的方面,反应室包括感应线圈PECVD系统的一部分。 功率比优选是可调节的并且可以变化。 实现功率比调整的一种方式是改变各个电极表面积。 实现调整的另一种方式是提供能够改变输出功率的功率分配器。 还描述了PECVD处理方法。
    • 4. 发明授权
    • RF powered plasma enhanced chemical vapor deposition reactor and methods
    • 射频等离子体增强化学气相沉积反应器和方法
    • US06227141B1
    • 2001-05-08
    • US09597659
    • 2000-06-19
    • Sujit SharanGurtej S. SandhuPaul Smith
    • Sujit SharanGurtej S. SandhuPaul Smith
    • C23C1600
    • H01J37/32174H01J37/32165
    • Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes. According to a preferred implementation, the power loop developed by the first RF power source is grounded interiorly of the chamber in a manner which reduces if not eliminates interference with other reactor components including the thermocouple.
    • 描述了等离子体增强化学气相沉积(PECVD)反应器及其实现方法。 在优选的实施方案中,PECVD反应器包括其中具有第一电极的处理室。 第二电极设置在室内并且被配置为支撑至少一个半导体工件用于处理。 第一RF电源将第一频率的RF功率提供给第一电极。 第二RF电源将第二频率的RF功率提供给第二电极。 优选地,第一和第二频率彼此不同,并且甚至更优选地,第一频率大于第二频率。 优选的反应器包括提供相对于一个电极的温度信息的热电偶。 根据优选实施方案,由第一RF电源开发的功率回路以室内接地,其方式如果不消除对包括热电偶的其它反应器部件的干扰,则减小。
    • 5. 发明授权
    • RF powered plasma enhanced chemical vapor deposition reactor and methods
    • 射频等离子体增强化学气相沉积反应器和方法
    • US6112697A
    • 2000-09-05
    • US26566
    • 1998-02-19
    • Sujit SharanGurtej S. SandhuPaul Smith
    • Sujit SharanGurtej S. SandhuPaul Smith
    • C23C16/509C23C16/505H01J37/32H01L21/205H05H1/46C23C16/00H05H1/00
    • H01J37/32174H01J37/32165
    • Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes. According to a preferred implementation, the power loop developed by the first RF power source is grounded interiorly of the chamber in a manner which reduces if not eliminates interference with other reactor components including the thermocouple.
    • 描述了等离子体增强化学气相沉积(PECVD)反应器及其实现方法。 在优选的实施方案中,PECVD反应器包括其中具有第一电极的处理室。 第二电极设置在室内并且被配置为支撑至少一个半导体工件用于处理。 第一RF电源将第一频率的RF功率提供给第一电极。 第二RF电源将第二频率的RF功率提供给第二电极。 优选地,第一和第二频率彼此不同,并且甚至更优选地,第一频率大于第二频率。 优选的反应器包括提供相对于一个电极的温度信息的热电偶。 根据优选实施方案,由第一RF电源开发的功率回路以室内接地,其方式如果不消除对包括热电偶的其它反应器部件的干扰,则减小。