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41. 发明授权

US07935637B2 Resist stripping methods using backfilling material layer 有权
标题翻译：使用回填材料层的抗剥落方法
公开(公告)号：US07935637B2
公开(公告)日：2011-05-03
申请号：US11839934
申请日：2007-08-16
申请人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
发明人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31133 , H01L21/31058 , H01L21/31138
摘要： A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated resist layer. Optionally, the backfilling material layer may be surface treated similarly to the surface treated resist layer. Under such circumstances: (1) surface portions of the backfilling material layer and resist layer; and (2) remaining portions of the backfilling material layer and resist layer, may be sequentially stripped using a two step etch method, such as a two step plasma etch method. Alternatively, a surface portion of the surface treated resist layer only may be stripped while using a first etch method, and the remaining portions of the resist layer and backfilling material layer may be planarized prior to being simultaneously stripped while using a second etch method.
摘要翻译：用于制造微电子结构的方法提供了形成位于衬底上方的至少侧向邻近且优选地横向邻接的抗蚀剂层的回填材料层。优选地，抗蚀剂层包括表面处理的抗蚀剂层。任选地，回填材料层可以与表面处理的抗蚀剂层类似地进行表面处理。在这种情况下：（1）回填材料层和抗蚀剂层的表面部分; 和（2）回填材料层和抗蚀剂层的剩余部分可以使用两步蚀刻方法，例如两步等离子体蚀刻方法来顺序剥离。或者，仅使用第一蚀刻方法剥离表面处理的抗蚀剂层的表面部分，并且可以在使用第二蚀刻方法同时剥离之前将抗蚀剂层和回填材料层的其余部分平坦化。

42. 发明授权

US07902128B2 Water-in-oil emulsions with hydrogel droplets background 有权
标题翻译：含水凝胶液滴背景的油包水乳液
公开(公告)号：US07902128B2
公开(公告)日：2011-03-08
申请号：US12111429
申请日：2008-04-29
申请人： Ying Zhang , Gregory P. Perez
发明人： Ying Zhang , Gregory P. Perez
IPC分类号： C09K8/588 , C09K8/68 , C09K8/528 , E21B43/00 , C04B28/02
CPC分类号： C09K8/36 , C09K8/82 , Y10S507/937
摘要： Methods and compositions are provided that include a water-in-oil composition comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets and a method comprising providing a water-in-oil emulsion comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets; and placing the water-in-oil emulsion in a well bore penetrating a subterranean formation. Additional methods are also provided.
摘要翻译：提供了包括油包油组合物的方法和组合物，其包含油基连续相和包含至少多个水凝胶液滴的不连续相，以及包括提供包含油 - 基于连续相和包含至少多个水凝胶液滴的不连续相; 并将油包水乳剂置于穿透地层的井眼中。还提供了附加的方法。

43. 发明授权

US07867952B2 Flexible polymer, particles prepared therefrom and process for preparing the same 有权
标题翻译：柔性聚合物，由其制备的颗粒及其制备方法
公开(公告)号：US07867952B2
公开(公告)日：2011-01-11
申请号：US12001956
申请日：2007-12-12
申请人： Pingmei Wang , Jianhui Luo , Yuzhang Liu , Huaijiang Zhu , Chunming Xiong , Qiang Liu , Ruyi Jiang , Yikun Li , Ying Zhang
发明人： Pingmei Wang , Jianhui Luo , Yuzhang Liu , Huaijiang Zhu , Chunming Xiong , Qiang Liu , Ruyi Jiang , Yikun Li , Ying Zhang
IPC分类号： C07C43/00
CPC分类号： C09K8/516 , C08F222/26 , C08F236/10 , C09K2208/18
摘要： Disclosed are a flexible polymer, particles made from same, and a process for preparing the particles. This flexible polymer is obtained from copolymerizing monomer (A) and monomer (B), wherein monomer (A) is one or more water-insoluble unsaturated diene monomers; monomer (B) is at least one compound with the general formula of wherein R is C1-C12alkyl, C1-C12 alkyl aryl, C1-C12 alkyl ether or C1-C12alkyl ester. Monomer (A) is in an amount of 60-90% by weight of the total combined weight of monomer (A) and monomer (B). Monomer (B) is in an amount of 10-40% by weight of the total combined weight of monomer (A) and monomer (B). The flexible polymer particles show excellent flexibility, deformability, elasticity as well as stability. They can be used in oilfields in nearby wellbore profile control and in-depth profile control or as in-depth flooding fluid diverting agents. They can also be applied in water shutoff in high temperature and high salinity production wells; preventing chemical channeling in polymer and ASP (alkali-surfactant-polymer) flooding; temporarily plugging in acidization; huff and puff; and preventing in-depth channeling in steam flooding, loss of circulation control and filtration control, and the like.
摘要翻译：公开了柔性聚合物，由其制成的颗粒和制备颗粒的方法。该柔性聚合物由共聚单体（A）和单体（B）得到，其中单体（A）为一种或多种水不溶性不饱和二烯单体; 单体（B）是至少一种具有通式的化合物，其中R是C 1 -C 12烷基，C 1 -C 12烷基芳基，C 1 -C 12烷基醚或C 1 -C 12烷基酯。单体（A）的单体（A）和单体（B）的总组合重量的60-90重量％。单体（B）的单体（A）和单体（B）的总组合重量的量为10-40重量％。柔性聚合物颗粒显示出优异的柔韧性，变形性，弹性以及稳定性。它们可用于油田附近的井筒剖面控制和深度剖面控制，或用作深度淹没液体转向剂。也可应用于高温高盐生产井的关闭水中; 防止聚合物和ASP（碱 - 表面活性剂 - 聚合物）淹水中的化学通道; 暂时酸化; 气喘吁吁; 并防止蒸汽溢流的深入沟通，流通控制和过滤控制的损失等。

44. 发明申请

US20100316677A1 USE OF BAMBOO LEAF TOTAL FLAVONES IN THE PREPARATION OF MEDICINE AND HEALTH FOOD FOR PREVENTION AND TREATMENT OF PROSTATIC DISEASES 审中-公开
标题翻译：在制备药物和健康食品中用于预防和治疗前列腺疾病的BAMBOO叶叶总黄酮的应用
公开(公告)号：US20100316677A1
公开(公告)日：2010-12-16
申请号：US10558130
申请日：2004-05-24
申请人： Ying Zhang , Xiaoqin Wu , Yonghua Zhang , Huafang Cai , Boyi Lu
发明人： Ying Zhang , Xiaoqin Wu , Yonghua Zhang , Huafang Cai , Boyi Lu
IPC分类号： A61K9/00 , A61K36/899
CPC分类号： A61K36/899 , A61K31/352
摘要： This invention discloses the new uses of Lophatherum Total Flavones in medical, pharmaceutical, and healthcare fields. Lophatherum Total Flavones have effects of anti-bacteria, inhibiting bacteria, anti-inflammation, anti-prostatic hyperplasia, anti-platelet aggregation, anti-tumor, and promotion of immunity, etc., with safety and without toxicity, suitable for chronic oral administration, and especially suitable for prevention and treatment of senile chronic degenerative diseases; Lophatherum Total Flavones may be used in fields of pharmaceutical and foods, as a natural drug for prevention and treatment of prostatitis, prostatic hyperplasia, and prostate cancer, or as a dietary supplement.
摘要翻译：本发明公开了Lophatherum总黄酮在医药，医药和保健领域的新用途。枸杞总黄酮具有抗菌，抑菌，抗炎，抗前列腺增生，抗血小板聚集，抗肿瘤，促进免疫等功效，安全无毒，适合慢性口服特别适用于老年慢性退行性疾病的预防和治疗; Lophatherum总黄酮可用于制药和食品领域，作为预防和治疗前列腺炎，前列腺增生和前列腺癌的天然药物，或作为膳食补充剂。

45. 发明授权

US07820552B2 Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack 有权
标题翻译：先进的高k栅极堆叠图案和包含图案化的高k栅极堆叠的结构
公开(公告)号：US07820552B2
公开(公告)日：2010-10-26
申请号：US11685558
申请日：2007-03-13
申请人： Siva Kanakasabapathy , Ying Zhang , Edmund M. Sikorski , Hongwen Yan , Vijay Narayanan , Vamsi K. Paruchuri , Bruce B. Doris
发明人： Siva Kanakasabapathy , Ying Zhang , Edmund M. Sikorski , Hongwen Yan , Vijay Narayanan , Vamsi K. Paruchuri , Bruce B. Doris
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/28088 , H01L21/31144 , H01L21/31645 , H01L21/823807 , H01L21/823828 , H01L29/045 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： An advanced method of patterning a gate stack including a high-k gate dielectric that is capped with a high-k gate dielectric capping layer such as, for example, a rare earth metal (or rare earth like)-containing layer is provided. In particular, the present invention provides a method in which a combination of wet and dry etching is used in patterning such gate stacks which substantially reduces the amount of remnant high-k gate dielectric capping material remaining on the surface of a semiconductor substrate to a value that is less than 1010 atoms/cm2, preferably less than about 109 atoms/cm2.
摘要翻译：提供了一种构图栅极堆叠的先进方法，该栅极堆叠包括用例如含有稀土金属（或稀土类））层的高k栅介质覆盖层封盖的高k栅极电介质。特别地，本发明提供了一种方法，其中使用湿蚀刻和干蚀刻的组合来构图这样的栅极堆叠，其将残留在半导体衬底的表面上的剩余的高k栅极电介质封盖材料的量基本上减小到值小于10 10原子/ cm 2，优选小于约10 9原子/ cm 2。

46. 发明授权

US07811997B2 Composition containing total triterpenoid sapogenins extracted from bamboo, and the preparation method and use thereof 有权
标题翻译：含有从竹提取的总三萜皂苷元的组合物及其制备方法和用途
公开(公告)号：US07811997B2
公开(公告)日：2010-10-12
申请号：US10538463
申请日：2003-04-28
申请人： Ying Zhang , Xiaoqin Wu , Zhuoyu Yu , Yunlong Zhu , Lingen Chen , Shenggen Lou
发明人： Ying Zhang , Xiaoqin Wu , Zhuoyu Yu , Yunlong Zhu , Lingen Chen , Shenggen Lou
IPC分类号： A01N45/00 , A61K31/704 , A61K36/899 , C07H15/24
CPC分类号： A61K36/899 , A61K31/704 , B01D11/0203 , B01D11/0288
摘要： The invention relates to a composition containing total triterpenoid sapogenins extracted from bamboo, the preparation method and use thereof. These total triterpenoid sapogenins are extracted from many parts of bamboo such as bamboo shavings in Gramineae by CO2 Supercritical Fluid Extraction technique. In the extract, the content of total triterpenoid sapogenins is 10-90%, while the contents of friedelin and lupenone are 5-35% and 1-10%, respectively. The extract in the invention has good physiological and pharmacological activities such as anti-free radical, anti-oxidation, anti-tumor and anti-hypertension. It can be used in medicines or functional foods for the treatment or prevention of cardiovascular and cerebrovascular diseases and tumor. It is also useful in cosmetics field.
摘要翻译：本发明涉及一种含有从竹提取的总三萜皂苷元的组合物，其制备方法和用途。这些总三萜皂甙元通过二氧化碳超临界流体萃取技术从禾本科的竹叶等多种部分中提取出来。在提取物中，三萜皂甙元总含量为10-90％，而脂蛋白和鲁蛋白含量分别为5-35％和1-10％。本发明提取物具有抗自由基，抗氧化，抗肿瘤，抗高血压等良好的生理，药理活性。可用于药物或功能性食品，用于治疗或预防心血管和脑血管疾病和肿瘤。在化妆品领域也很有用。

47. 发明授权

US07785944B2 Method of making double-gated self-aligned finFET having gates of different lengths 失效
标题翻译：制造具有不同长度的栅极的双门控自对准finFET的方法
公开(公告)号：US07785944B2
公开(公告)日：2010-08-31
申请号：US12077973
申请日：2008-03-24
申请人： Huilong Zhu , Bruce B. Doris , Xinlin Wang , Jochen Beintner , Ying Zhang , Philip J. Oldiges
发明人： Huilong Zhu , Bruce B. Doris , Xinlin Wang , Jochen Beintner , Ying Zhang , Philip J. Oldiges
IPC分类号： H01L21/84
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7855 , H01L29/7856
摘要： A method is provided of making a gated semiconductor device. Such method can include patterning a single-crystal semiconductor region of a substrate to extend in a lateral direction parallel to a major surface of a substrate and to extend in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the semiconductor region having a first side and a second side opposite, e.g., remote from the first side. A first gate may be formed overlying the first side, the first gate having a first gate length in the lateral direction. A second gate may be formed overlying the second side, the second gate having a second gate length in the lateral direction which is different from the first gate length. In one embodiment, the second gate length may be shorter than the first gate length. In one embodiment, the first gate may consist essentially of polycrystalline silicon germanium and the second gate may consist essentially of polysilicon.
摘要翻译：提供了一种制造门控半导体器件的方法。这种方法可以包括图案化衬底的单晶半导体区域，以在与衬底的主表面平行的横向方向上延伸并且沿至少基本上垂直且至少基本垂直于主表面的方向延伸，半导体区域具有第一侧和第二侧，例如远离第一侧。第一栅极可以形成在第一侧上，第一栅极在横向上具有第一栅极长度。第二栅极可以形成在第二侧上，第二栅极在横向上具有与第一栅极长度不同的第二栅极长度。在一个实施例中，第二栅极长度可以比第一栅极长度短。在一个实施例中，第一栅极可以主要由多晶硅锗组成，第二栅极可以由多晶硅组成。

48. 发明授权

US07785943B2 Method for forming a multi-gate device with high k dielectric for channel top surface 失效
标题翻译：用于形成用于沟道顶表面的具有高k电介质的多栅极器件的方法
公开(公告)号：US07785943B2
公开(公告)日：2010-08-31
申请号：US11928787
申请日：2007-10-30
申请人： Bruce B. Doris , Oleg Gluschenkov , Ying Zhang , Huilong Zhu
发明人： Bruce B. Doris , Oleg Gluschenkov , Ying Zhang , Huilong Zhu
IPC分类号： H01L21/00
CPC分类号： H01L29/785 , H01L29/66795
摘要： Method for providing a transistor that includes the steps of providing a silicon on insulator layer, providing a silicon oxide insulation layer, providing a dielectric layer, removing at least a portion of the silicon oxide insulation layer and the dielectric layer to form a gate stack, and forming a gate electrode. The gate electrode covers a portion of the gate stack.
摘要翻译：一种用于提供晶体管的方法，包括以下步骤：提供绝缘体上硅层，提供氧化硅绝缘层，提供电介质层，去除氧化硅绝缘层和电介质层的至少一部分以形成栅叠层; 并形成栅电极。栅电极覆盖栅叠层的一部分。

49. 发明申请

US20100210602A1 PhoU (PerF), A PERSISTENCE SWITCH INVOLVED IN PERSISTER FORMATION AND TOLERANCE TO MULTIPLE ANTIBIOTICS AND STRESSES AS A DRUG TARGET FOR PERSISTER BACTERIA 审中-公开
标题翻译： PhoU（PerF），涉及多个抗生素和应激的持续形成和耐受性的持续开关作为药物细菌的药物目标
公开(公告)号：US20100210602A1
公开(公告)日：2010-08-19
申请号：US12519021
申请日：2007-12-12
申请人： Ying Zhang , Yongfang Li
发明人： Ying Zhang , Yongfang Li
IPC分类号： A61K31/65 , C12N1/20 , A61K31/495 , C12Q1/42 , A61K31/506 , A61K31/192 , A61P31/04
CPC分类号： A61K31/00 , Y02A50/473
摘要： The PhoU protein is a widely expressed protein in bacteria, but not in eukaryotes. The PhoU protein is required for persister formation in bacteria. The invention includes compositions to reduce persister formation and their use as therapeutic agents. The invention further includes methods for identification of compounds to reduce persister formation. The invention further includes kits for the identification of agents that modulate the activity and expression of PhoU.
摘要翻译： PhoU蛋白是细菌中广泛表达的蛋白质，但不是真核生物。 PhoU蛋白是细菌中持续形成所必需的。本发明包括减少持续体形成及其作为治疗剂的用途的组合物。本发明还包括用于鉴定化合物以减少持久性体形成的方法。本发明还包括用于鉴定调节PhoU活性和表达的试剂的试剂盒。

50. 发明授权

US07749842B2 Structures and methods for making strained MOSFETs 有权
标题翻译：制造应变MOSFET的结构和方法
公开(公告)号：US07749842B2
公开(公告)日：2010-07-06
申请号：US11754627
申请日：2007-05-29
申请人： Huilong Zhu , Steven W. Bedell , Bruce B. Doris , Ying Zhang
发明人： Huilong Zhu , Steven W. Bedell , Bruce B. Doris , Ying Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7842 , H01L29/78687
摘要： A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block. Accordingly, a semiconductor device having a strained Si fin vertically oriented on a non-conductive substrate may be formed where the strained Si film is oriented such that it may form a channel of small dimensions allowing access to both sides and top in order to from single gate, double gate, or more gate MOSFETs and finFETs with a channel having a reduced number of defects and/or reduced dimensions.
摘要翻译：提供了提供具有减小的缺陷的应变Si膜的方法和装置，其中应变Si膜在非导电基板的表面上形成垂直取向的翅片。应变Si膜或翅片可以形成具有相对较小尺寸的半导体通道，同时也具有很少的缺陷。应变Si翅片通过在松弛的SiGe块的一侧生长Si而形成。可以在应变Si膜的表面上形成诸如氧化物，高“k”材料或两者的组合的电介质栅极。另外，在基本上不影响应变Si膜中的应力的情况下，可以去除弛豫的SiGe块，以允许在松弛的SiGe块先前占据的表面上形成第二栅极氧化物。因此，可以形成具有垂直取向在非导电衬底上的应变Si鳍片的半导体器件，其中应变Si膜被定向成使得其可以形成允许接近两侧和顶部的小尺寸的通道，以便从单个栅极，双栅极或更多栅极MOSFET和finFET，沟道具有减少的缺陷数量和/或减小的尺寸。

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