会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 46. 发明授权
    • Local flare correction
    • 局部耀斑校正
    • US07604912B2
    • 2009-10-20
    • US11147213
    • 2005-06-08
    • Teruyoshi YaoSatoru Asai
    • Teruyoshi YaoSatoru Asai
    • G03C5/00G03F1/00G03B27/68G06K9/00G06F17/50H01L21/00
    • G03F7/70941G03F1/44G03F1/70
    • A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.
    • 在制造半导体器件时在曝光时产生的局部光斑的校正,其中针对每个区域计算要暴露的区域中的图案的实质数值孔径,之后,对于图案中的图案的光斑校正量 根据每个区域中的实际数值孔径和曝光条件调整每个区域。 由此,可以根据各自的曝光条件定量地校正局部光斑对通过光刻曝光的图案的影响,从而可以容易且准确地形成期望的图案。