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1. 发明授权

US08316328B2 Apparatus for manufacturing a photomask 有权
标题翻译：光掩模制造装置
公开(公告)号：US08316328B2
公开(公告)日：2012-11-20
申请号：US13453394
申请日：2012-04-23
申请人： Hiroki Futatsuya , Kazumasa Morishita
发明人： Hiroki Futatsuya , Kazumasa Morishita
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

2. 发明授权

US07562334B2 Method for manufacturing a photomask 有权
标题翻译：光掩模的制造方法
公开(公告)号：US07562334B2
公开(公告)日：2009-07-14
申请号：US11209748
申请日：2005-08-24
申请人： Hiroki Futatsuya , Kazumasa Morishita
发明人： Hiroki Futatsuya , Kazumasa Morishita
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

3. 发明授权

US06862726B2 Light intensity simulation method, program product, and designing method of photomask 有权
标题翻译：光强模拟方法，程序产品和光掩模的设计方法
公开(公告)号：US06862726B2
公开(公告)日：2005-03-01
申请号：US10353938
申请日：2003-01-30
申请人： Hiroki Futatsuya , Morimi Osawa
发明人： Hiroki Futatsuya , Morimi Osawa
IPC分类号： G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/705 , G03F7/70941
摘要： Light intensities at light intensity calculation points on the photomask are found approximately based on distances from barycenters of opening patterns, and areas and transmission factors of the opening patterns. Thereafter, the result is added to a distribution of light intensity which is obtained by the conventional simulation without consideration given to the influence of the local flare. According to such a method, it is possible to easily carry out the simulation of the light intensity with high accuracy.
摘要翻译：基于光密度计算点上的光强度大致基于打开图案的重心的距离以及开口图案的面积和透射系数。此后，将结果加入到通过常规模拟获得的光强分布，而不考虑局部耀斑的影响。根据这种方法，可以容易地高精度地进行光强度的模拟。

4. 发明申请

US20120206700A1 APPARATUS FOR MANUFACTURING A PHOTOMASK 有权
标题翻译：制造光电装置的装置
公开(公告)号：US20120206700A1
公开(公告)日：2012-08-16
申请号：US13453394
申请日：2012-04-23
申请人： Hiroki Futatsuya , Kazumasa Morishita
发明人： Hiroki Futatsuya , Kazumasa Morishita
IPC分类号： G03B27/42
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

5. 发明授权

US08185848B2 Apparatus for performing a manufacturing method of a photomask 有权
标题翻译：用于执行光掩模的制造方法的装置
公开(公告)号：US08185848B2
公开(公告)日：2012-05-22
申请号：US13231296
申请日：2011-09-13
申请人： Hiroki Futatsuya , Kazumasa Morishita
发明人： Hiroki Futatsuya , Kazumasa Morishita
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

6. 发明申请

US20110159417A1 METHOD FOR MANUFACTURING A PHOTOMASK 有权
标题翻译：制造光电子的方法
公开(公告)号：US20110159417A1
公开(公告)日：2011-06-30
申请号：US13041577
申请日：2011-03-07
申请人： Hiroki Futatsuya , Kazumasa Morishita
发明人： Hiroki Futatsuya , Kazumasa Morishita
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

7. 发明申请

US20090293039A1 METHOD FOR MANUFACTURING A PHOTOMASK 有权
标题翻译：制造光电子的方法
公开(公告)号：US20090293039A1
公开(公告)日：2009-11-26
申请号：US12481226
申请日：2009-06-09
申请人： Hiroki FUTATSUYA , Kazumasa MORISHITA
发明人： Hiroki FUTATSUYA , Kazumasa MORISHITA
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： A method for manufacturing a photomask based on design data includes the steps of forming a figure element group including a figure element in a layout pattern on the photomask and a figure element affecting the figure element due to the optical proximity effect, adding identical identification data to a data group indicating an identical figure element group, estimating an influence of the optical proximity effect on the figure element group, generating correction data indicating a corrected figure element in which the influence of the optical proximity effect is compensated for at the time of exposure, creating figure data by associating data having the identical identification data with correction data having the identical identification data, and forming a mask pattern on the photomask using figure data. Thus, the computation time for correction of the layout can be reduced, thereby reducing the production time of the photomask.
摘要翻译：基于设计数据制造光掩模的方法包括以下步骤：在光掩模上以布局图案形成包括图形元素的图形元素组以及由于光学邻近效应影响图形元素的图形元素，将相同的标识数据添加到指示相同图形元素组的数据组，估计光学邻近效应对图形元素组的影响，产生指示在曝光时补偿光学邻近效应的影响的校正图形元素的校正数据，通过将具有相同标识数据的数据与具有相同标识数据的校正数据相关联来创建图形数据，以及使用图形数据在光掩模上形成掩模图案。因此，可以减少用于校正布局的计算时间，从而减少光掩模的生产时间。

8. 发明授权

US07577556B2 Method and equipment for simulation 有权
标题翻译：模拟方法和设备
公开(公告)号：US07577556B2
公开(公告)日：2009-08-18
申请号：US10782821
申请日：2004-02-23
申请人： Hiroki Futatsuya , Satoru Asai
发明人： Hiroki Futatsuya , Satoru Asai
IPC分类号： G06G7/48
CPC分类号： G03F1/70
摘要： The simulation equipment has division unit for dividing a layout of a photo mask (mask layout) into a plurality of areas, average light intensity value calculation unit for calculating an average value of light intensity in each of the areas, smoothing unit for subjecting the calculated average value to smoothing processing, and multiplication unit for multiplying the smoothed average value by a predetermined multiplier.
摘要翻译：模拟设备具有用于将光掩模（掩模布局）的布局分割成多个区域的分割单元，用于计算每个区域中的光强度的平均值的平均光强度值计算单元，平滑处理的平均值，以及将平滑后的平均值乘以预定乘数的乘法单元。

9. 发明申请

US20070198965A1 Simulation method and semiconductor device fabrication method 有权
标题翻译：模拟方法和半导体器件制造方法
公开(公告)号：US20070198965A1
公开(公告)日：2007-08-23
申请号：US11507523
申请日：2006-08-22
申请人： Hiroki Futatsuya
发明人： Hiroki Futatsuya
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F7/70433 , G03F7/705
摘要： The simulation method is for simulating a pattern to be transferred onto a photoresist film by exposure using a photomask with a main pattern 10 and an assist pattern 12 formed on. The simulation is made, using data given by adding a bias value to a design dimension of the assist pattern as data of a dimension of the assist pattern. The simulation is made, using data given by adding a bias value to a design dimension of the assist pattern as data of a dimension of the assist pattern. The simulation can be made with high accuracy, and the fitting error can be made very small.
摘要翻译：仿真方法是通过使用形成有主图案10和辅助图案12的光掩模进行曝光来模拟要转印到光致抗蚀剂膜上的图案。进行模拟，使用通过将辅助图案的设计维度添加偏置值作为辅助图案的尺寸的数据而给出的数据。进行模拟，使用通过将辅助图案的设计维度添加偏置值作为辅助图案的尺寸的数据而给出的数据。可以高精度地进行模拟，并且可以使拟合误差非常小。

10. 发明授权

US08349541B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08349541B2
公开(公告)日：2013-01-08
申请号：US13218585
申请日：2011-08-26
申请人： Yuji Setta , Hiroki Futatsuya
发明人： Yuji Setta , Hiroki Futatsuya
IPC分类号： G03F7/20
CPC分类号： G03F7/70091
摘要： The semiconductor device manufacturing method comprises the step of transferring patterns formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination. In the step of making the exposure with oblique incidence illumination, the exposure is made with an aperture stop 16 including a first ring-shaped aperture 22, and a plurality of second apertures 24a1-24a4 formed around the first ring-shaped aperture 22. The exposure is made with an aperture stop 16 having the first ring-shaped aperture 22 which can transfer patterns arranged at a medium pitch to a relatively large pitch with a relatively high resolution and the second aperture 24a1-24a4 which can transfer patterns arranged at a relatively small pitch with a relatively high resolution, whereby even when the patterns are arranged at various pitch values, the DOF can be surely sufficient, and the patterns can be stably transferred.
摘要翻译：半导体器件制造方法包括通过倾斜入射照明的曝光将在掩模版上形成的图案转印到半导体衬底的步骤。在用倾斜入射照明进行曝光的步骤中，用包括第一环形孔22的孔径光阑16和围绕第一环形孔22形成的多个第二孔24a1-24a4进行曝光。利用具有第一环形孔22的孔径光阑16进行曝光，该孔径光阑16可以以相对高的分辨率将以中间间距布置的图案以相对较大的间距传送，并且第二孔24a1-24a4可以传送相对于具有相对高分辨率的小间距，由此即使图案以各种间距值排列，DOF也可以确实足够，并且可以稳定地转印图案。

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