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41. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

42. 发明授权

US07885042B2 CPP magneto-resistive effect device utilizing an anti-oxidizing layer as part of the spacer layer in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：在可用于硬盘系统中的头部万向节组件的薄膜磁头中使用抗氧化层作为间隔层的一部分的CPP磁阻效应器件
公开(公告)号：US07885042B2
公开(公告)日：2011-02-08
申请号：US11870097
申请日：2007-10-10
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3272 , H01F41/305 , Y10T29/49044 , Y10T29/49048
摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。半导体层是n型氧化物半导体。当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。

43. 发明授权

US07535682B2 Magneto-resistance element and thin film magnetic head with improved heat reliability 有权
标题翻译：磁阻元件和薄膜磁头，提高了热可靠性
公开(公告)号：US07535682B2
公开(公告)日：2009-05-19
申请号：US11519854
申请日：2006-09-13
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F1/408 , H01F10/1936 , H01F10/3272
摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.
摘要翻译：根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X2YZ（其中X为贵金属元素，Y为过渡层）的Heusler合金层 Mn，V或Ti基的金属，Z是III族至V族的元素），组成X的一部分被Co替代，组合物X中的Co的原子组成比为0.5〜0.85。

44. 发明申请

US20090086383A1 CPP type magneto-resistive effect device and magnetic disk system 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20090086383A1
公开(公告)日：2009-04-02
申请号：US11865384
申请日：2007-10-01
申请人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
发明人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.
摘要翻译：本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

45. 发明授权

US07510787B2 Magneto-resistance effect element and thin-film magnetic head 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US07510787B2
公开(公告)日：2009-03-31
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。该氧化物的RA为0.10〜2μm，峰值为0.36μmol。

46. 发明申请

US20080174920A1 CPP TYPE MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISC SYSTEM 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20080174920A1
公开(公告)日：2008-07-24
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/56 , G11B5/127
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

47. 发明申请

US20080170336A1 MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISK SYSTEM 有权
标题翻译：磁电阻效应器和磁盘系统
公开(公告)号：US20080170336A1
公开(公告)日：2008-07-17
申请号：US11968911
申请日：2008-01-03
申请人： Yoshihiro TSUCHIYA , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
发明人： Yoshihiro TSUCHIYA , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3993 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.
摘要翻译：本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，并且第一铁磁层和第二铁磁层彼此层叠，间隔层插入在它们之间具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层之间的半导体氧化物层和第二非磁性金属层，形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，并且添加金属不太可能被氧化成锌。因此，可以根据需要保持器件的面积电阻率低，并且使得形成间隔层的一部分的半导体氧化物层变厚，同时阻止任何噪声增加。这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点，并且膜特性的可靠性得到更大的改善。

48. 发明申请

US20080112091A1 Current-confined-path type magnetoresistive element and method of manufacturing same 审中-公开
标题翻译：电流限制型磁阻元件及其制造方法
公开(公告)号：US20080112091A1
公开(公告)日：2008-05-15
申请号：US11896707
申请日：2007-09-05
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A spacer layer of an MR element includes: a nonmagnetic metal layer disposed on a pinned layer; a protection layer disposed on the nonmagnetic metal layer to prevent oxidation or nitriding of the nonmagnetic metal layer; an island-shaped insulating layer disposed on the protection layer; and a coating layer covering these layers. When seen in a direction perpendicular to the top surface of the pinned layer, there are formed in the spacer layer a region where the insulating layer is present and a region where the insulating layer is absent. A thickness of the protection layer taken in at least part of the region where the insulating layer is absent is zero or smaller than a thickness of the protection layer taken in the region where the insulating layer is present.
摘要翻译： MR元件的间隔层包括：设置在钉扎层上的非磁性金属层; 设置在所述非磁性金属层上以防止所述非磁性金属层的氧化或氮化的保护层; 设置在保护层上的岛状绝缘层; 以及覆盖这些层的涂层。当在垂直于被钉扎层的顶表面的方向上观察时，在间隔层中形成绝缘层存在的区域和绝缘层不存在的区域。在绝缘层不存在的区域的至少一部分中取出的保护层的厚度为保护层的厚度在与绝缘层存在的区域相同的厚度以上。

49. 发明申请

US20080019060A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080019060A1
公开(公告)日：2008-01-24
申请号：US11762457
申请日：2007-06-13
申请人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwiched between them, with a sense current applied in a stacking direction, wherein said free layer functions such that its magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a Heusler alloy layer, wherein an Fe layer is formed on one of both planes of said Heusler alloy layer in the stacking direction, wherein said one plane is near to at least a nonmagnetic spacer layer side, and said fixed magnetization layer is made up of a multilayer structure including a Heusler alloy layer, wherein Fe layers are formed on both plane sides of said Heusler alloy layer in the stacking direction with said Heusler alloy layer sandwiched between them. It is thus possible to prevent diffusion of Co atoms contained in the CoFe layer into the Heusler alloy layer, enabling the decrease in the spin polarizability of the Heusler alloy layer to be hold back and achieving a high MR ratio.
摘要翻译：本发明提供一种具有包含非磁性间隔层的CPP（电流垂直于平面）结构的磁阻效应器件，以及夹在它们之间的所述非磁性间隔层彼此堆叠的固定磁化层和自由层，具有感觉电流施加在层叠方向上，其中所述自由层的功能使得其磁化方向根据外部磁场而变化，并且由包括Heusler合金层的多层结构构成，其中在两个平面之一上形成Fe层的所述Heusler合金层，其中所述一个平面接近至少一个非磁性间隔层侧，并且所述固定磁化层由包括Heusler合金层的多层结构构成，其中在两者上形成Fe层所述Heusler合金层在层叠方向上的平面侧与所述Heusler合金层夹在它们之间。因此，可以防止CoFe层中所含的Co原子扩散到Heusler合金层中，能够抑制Heusler合金层的自旋极化率的降低并获得高的MR比。

50. 发明申请

US20070291422A1 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US20070291422A1
公开(公告)日：2007-12-20
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/39 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由其合金。

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