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41. 发明申请

US20120105298A1 ACOUSTIC WAVE FILTER 有权
标题翻译：声波滤波器
公开(公告)号：US20120105298A1
公开(公告)日：2012-05-03
申请号：US13344274
申请日：2012-01-05
申请人： Kazunori Inoue , Takashi Matsuda , Michio Miura
发明人： Kazunori Inoue , Takashi Matsuda , Michio Miura
IPC分类号： H03H9/64 , H01Q1/50 , H03H9/72
CPC分类号： H03H9/02992 , H03H9/02952 , H03H9/6483 , H03H9/725
摘要： A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate 1, resonators 2a and 2b that include a comb-shaped electrode formed on the piezoelectric substrate 1, a wiring portion 3 that is connected to the comb-shaped electrode, and a dielectric layer 4 formed to cover the comb-shaped electrode. The wiring portion 3 is provided with a lower layer wiring portion 3d that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion 3e that is disposed on the lower layer wiring portion 3d. The upper layer wiring portion 3e includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion 3d.
摘要翻译：以低成本实现降低电线之间的寄生电容的结构。公开了一种设置有压电基板1的谐波滤波器，包括形成在压电基板1上的梳状电极的谐振器2a和2b，连接到梳状电极的布线部分3和介电层4 形成为覆盖梳状电极。布线部分3设置有与梳状电极相同的层中的下层布线部分3d和布置在下层布线部分3d上的上层布线部分3e。上层布线部分3e包括具有比下层布线部分3d的电极宽度更宽的电极宽度的区域。

42. 发明申请

US20110204994A1 BOUNDARY ACOUSTIC WAVE DEVICE AND COMMUNICATION EQUIPMENT 有权
标题翻译：边界声波设备和通信设备
公开(公告)号：US20110204994A1
公开(公告)日：2011-08-25
申请号：US12711965
申请日：2010-02-24
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda
IPC分类号： H03H9/72 , H01L41/04 , H03H9/64
CPC分类号： H03H9/02834 , H03H9/0222 , H03H9/02653
摘要： A boundary acoustic waves device includes a piezoelectric substrate (16) having piezoelectricity, interdigitated electrodes (14a, 14b) formed on the piezoelectric substrate, a first medium (17) formed on the piezoelectric substrate so as to cover the interdigitated electrode, and a second medium (18) formed on the first medium. The interdigitated electrodes include a plurality of electrode fingers (13a, 13b) and bus bars (12a, 12b) that connect ends of the plurality of electrode fingers. A third medium (19a) is formed on the first medium. The second medium and the third medium are in contact with the first medium. The first medium, the second medium, and the third medium are formed of different materials. The first medium, the second medium, and the third medium are different in a ratio in length of a part with the third medium formed with respect to a length of a propagation path of boundary acoustic waves in a cross-section perpendicular to a longitudinal direction of the electrode fingers, in the longitudinal direction of the electrode fingers.
摘要翻译：声界面波装置包括具有压电性的压电基板（16），形成在压电基板上的交错电极（14a，14b），形成在压电基板上以覆盖交叉指状电极的第一介质（17）介质（18）形成在第一介质上。交叉电极包括连接多个电极指的端部的多个电极指（13a，13b）和母线（12a，12b）。在第一介质上形成第三介质（19a）。第二介质和第三介质与第一介质接触。第一介质，第二介质和第三介质由不同的材料形成。第一介质，第二介质和第三介质在与纵向方向垂直的截面中相对于边界声波的传播路径的长度形成的部分的长度的比例不同的电极指的长度方向。

43. 发明申请

US20100244624A1 ACOUSTIC WAVE DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：声波装置及其制造方法
公开(公告)号：US20100244624A1
公开(公告)日：2010-09-30
申请号：US12647071
申请日：2009-12-24
申请人： Satoru MATSUDA , Michio Miura , Takashi Matsuda
发明人： Satoru MATSUDA , Michio Miura , Takashi Matsuda
IPC分类号： H01L41/08 , H01L41/22 , H01L41/047 , B05D5/12
CPC分类号： H03H3/10 , H03H9/0222 , H03H9/02929
摘要： A method of producing an acoustic wave device includes: forming an interdigital electrode 3 on a piezoelectric substrate 2; forming a barrier film 4 so as to cover the interdigital electrode 3; forming a medium 5 on the barrier film 4; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode 3; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film 4 or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.
摘要翻译：制造声波器件的方法包括：在压电基片2上形成叉指电极3; 形成阻挡膜4以覆盖叉指电极3; 在阻挡膜4上形成介质5; 测量由叉指电极3激发的声波的频率特性; 以及通过对阻挡膜4进行图案化或进一步提供调整膜，在激励区域中形成具有与其它部分不同的厚度的调节区域。在形成调整区域时，根据测定的频率特性调整调整区域的面积T.

44. 发明申请

US20100148887A1 ELASTIC WAVE DEVICE, DUPLEXER USING THE SAME, AND COMMUNICATION APPARATUS USING THE DUPLEXER 有权
标题翻译：弹性波形装置，使用相同的双工器，以及使用双工器的通信装置
公开(公告)号：US20100148887A1
公开(公告)日：2010-06-17
申请号：US12711871
申请日：2010-02-24
申请人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
发明人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
IPC分类号： H03H9/205
CPC分类号： H03H9/6476 , H03H9/02992 , H03H9/6483
摘要： An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.
摘要翻译：弹性波装置包括具有压电基板的谐振器，形成在压电基板上的谐振单元和形成在压电基板上的谐振单元的各侧上的反射器，以及形成在压电基板上的凸块。谐振器被配置为使得两个或更多个分离谐振器并联连接，并且在夹在分离谐振器的反射器之间的区域中形成凸块。

45. 发明授权

US07573178B2 Acoustic wave device, resonator and filter 失效
标题翻译：声波装置，谐振器和滤波器
公开(公告)号：US07573178B2
公开(公告)日：2009-08-11
申请号：US11898474
申请日：2007-09-12
申请人： Shogo Inoue , Hiroyoshi Yasuda , Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Shogo Inoue , Hiroyoshi Yasuda , Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H9/0222 , H03H9/02574
摘要： An acoustic wave device includes a piezoelectric substrate, comb electrodes formed above the piezoelectric substrate, and a first dielectric film provided so as to cover the comb electrodes, the first dielectric film having empty spaces associated with fingers of the comb electrodes.
摘要翻译：声波装置包括压电基板，形成在压电基板上方的梳形电极和设置成覆盖梳状电极的第一电介质膜，第一电介质膜具有与梳状电极的指状物相关联的空白空间。

46. 发明授权

US07466061B2 Acoustic boundary wave device, resonator and filter 有权
标题翻译：声界波器件，谐振器和滤波器
公开(公告)号：US07466061B2
公开(公告)日：2008-12-16
申请号：US11806988
申请日：2007-06-05
申请人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H03H9/25
CPC分类号： H03H9/0222 , H03H9/02834 , H03H9/02929
摘要： An acoustic boundary wave device includes a first medium having piezoelectricity, electrodes that are provided on the first medium and excite acoustic waves, a second medium made of a material different from the first medium and provided on the first medium so as to cover the electrodes, and a third medium that has a heat conductivity higher than that of the second medium and is provided so as to contact an upper surface of the second medium and at least a part of side surfaces of the second medium.
摘要翻译：声界波设备包括具有压电性的第一介质，设置在第一介质上的电极和激发声波，由与第一介质不同的材料制成的第二介质，并设置在第一介质上以覆盖电极，以及具有比第二介质的热导率高的第三介质，并且设置成与第二介质的上表面和第二介质的至少一部分侧表面接触。

47. 发明申请

US20070229192A1 Elastic boundary wave device, resonator, and filter 有权
标题翻译：弹性边界波器件，谐振器和滤波器
公开(公告)号：US20070229192A1
公开(公告)日：2007-10-04
申请号：US11711893
申请日：2007-02-28
申请人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H03H9/00
CPC分类号： H03H9/0222 , H03H9/02559 , H03H9/14541 , H03H9/6483
摘要： An elastic boundary wave device includes a LiNbO3 substrate, an electrode exciting an elastic wave and provided on the substrate, and a silicon oxide film provided on the substrate to cover the electrode, and parameters of the elastic boundary wave device have any one of ranges, where “θ” is a rotation Y cut angle of the substrate, “a” is a ratio of copper density with respect to a density of a material used as the electrode, “λ” is a wavelength of the elastic wave excited by the electrode, “h” is a film thickness of the electrode, “H” is a thickness of the silicon oxide film.
摘要翻译：弹性边界波装置包括LiNbO 3 3衬底，激发弹性波并设置在衬底上的电极和设置在衬底上以覆盖电极的氧化硅膜以及弹性边界的参数波长装置具有任何一个范围，其中“θ”是基板的旋转Y切割角，“a”是铜密度相对于用作电极的材料的密度的比率，“λ”是波长由电极激发的弹性波，“h”是电极的膜厚，“H”是氧化硅膜的厚度。

48. 发明授权

US07274129B2 Surface acoustic wave device and method of fabricating the same 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US07274129B2
公开(公告)日：2007-09-25
申请号：US10812362
申请日：2004-03-30
申请人： Masanori Ueda , Osamu Kawachi , Michio Miura , Suguru Warashina
发明人： Masanori Ueda , Osamu Kawachi , Michio Miura , Suguru Warashina
IPC分类号： H01L41/08
CPC分类号： H03H9/725 , H01L2224/16 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2924/16152 , H01L2924/16195 , H03H3/10 , H03H9/0576 , H03H9/6483 , H03H9/72 , H01L2924/00014 , H01L2924/00 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/05671 , H01L2224/05681
摘要： A surface acoustic wave device includes, a first substrate, a surface acoustic wave chip attached to the first substrate, and a second substrate that hermetically seals the surface acoustic wave chip. At least one of the first and second substrates includes. The first and second substrates have respective joining surfaces. An electric circuit is formed on a surface area of the first substrate other than the joining surfaces.
摘要翻译：表面声波装置包括：第一基板，附着到第一基板的表面声波芯片和密封声表面波芯片的第二基板。第一和第二基板中的至少一个包括。第一和第二基板具有相应的接合表面。在除了接合面之外的第一基板的表面区域上形成电路。

49. 发明授权

US07224101B2 Elastic boundary wave device and method of manufacturing the same 有权
标题翻译：弹性边界波装置及其制造方法
公开(公告)号：US07224101B2
公开(公告)日：2007-05-29
申请号：US10984836
申请日：2004-11-10
申请人： Naoyuki Mishima , Michio Miura
发明人： Naoyuki Mishima , Michio Miura
IPC分类号： H01L41/08
CPC分类号： H03H9/0222 , H03H3/08
摘要： An elastic boundary wave device includes a first piezoelectric substrate, IDTs arranged thereon, a first dielectric film having a smoothed surface that covers the IDTs, a second substrate that is a silicon-based substrate, and a second dielectric film provided on a main surface of the second substrate. The smoothed surface of the first dielectric surface and a surface of the second dielectric film are joined together.
摘要翻译：弹性边界波装置包括第一压电基板，布置在其上的IDT，具有覆盖IDT的平滑表面的第一电介质膜，作为硅基基板的第二基板，以及设置在硅基基板的主表面上的第二电介质膜第二基板。第一电介质表面的平滑表面和第二电介质膜的表面接合在一起。

50. 发明授权

US07202590B2 Surface acoustic wave device and method of manufacturing the same 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US07202590B2
公开(公告)日：2007-04-10
申请号：US10840632
申请日：2004-05-07
申请人： Takashi Matsuda , Michio Miura , Yoshio Satoh , Masanori Ueda
发明人： Takashi Matsuda , Michio Miura , Yoshio Satoh , Masanori Ueda
IPC分类号： H03H9/25
CPC分类号： H03H9/02866 , H03H3/08 , H03H9/02905 , H03H9/0576 , H03H9/72 , H03H9/725
摘要： A surface acoustic wave device includes: a piezoelectric substrate that has two or more resonators formed on a surface; and a supporting substrate that is joined to another surface of the piezoelectric substrate. In this surface acoustic wave device, at least two of the resonators have exciting portions that overlap each other in the direction of propagating surface acoustic waves, and at least a part of the piezoelectric substrate is removed or modified to have different properties between at least one pair of overlapping resonators among the resonators having the overlapping portions.
摘要翻译：表面声波装置包括：压电基板，其在表面上形成有两个以上的谐振器; 以及与压电基板的另一表面接合的支撑基板。在该声表面波装置中，至少两个谐振器具有在传播表面声波的方向上彼此重叠的激励部分，并且压电基板的至少一部分被去除或修改为在至少一个具有重叠部分的谐振器中的一对重叠谐振器。

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