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41. 发明申请

US20120106173A1 LIGHT SOURCE DEVICE 审中-公开
标题翻译：光源设备
公开(公告)号：US20120106173A1
公开(公告)日：2012-05-03
申请号：US13381592
申请日：2010-06-29
申请人： Kenji Yoneda , Takuzo Togawa
发明人： Kenji Yoneda , Takuzo Togawa
IPC分类号： F21V29/00
CPC分类号： G03B21/16 , F21V29/677 , F21V29/76 , F21V29/83 , F21W2131/103 , F21Y2115/10
摘要： A light source device, having an excellent cooling efficiency and usable when multiple devices are stacked in a vertical direction, is presented. The light source device includes a casing having a sufficiently small size in height relative to depth and width, wherein, an intake hole is formed in a casing wall for taking in air and an exhaust hole is formed for exhausting air, a fan arranged inside the casing so that a rotating shaft thereof is inclined with respect to the height direction of the casing and partitioning the interior into front and rear chambers to form an air flow from the intake hole to the exhaust hole, a light source inside the front chamber, and a heat radiation fin provided thermally connected to the light source inside the front chamber, wherein the intake hole is in the front chamber and the exhaust hole is in the rear.
摘要翻译：本发明提供了一种具有优异冷却效率并且在多个器件沿垂直方向堆叠时可用的光源器件。光源装置包括相对于深度和宽度具有足够小尺寸的壳体，其中，在用于吸入空气的壳体壁中形成吸入孔，并且形成用于排出空气的排气孔，布置在内部的风扇壳体，使得其旋转轴相对于壳体的高度方向倾斜并将内部分隔成前室和后室，以形成从进气孔到排气孔的空气流，前室内的光源和设置为与前室内的光源热连接的散热片，其中，所述进气孔位于所述前室中，所述排气孔位于所述后室中。

42. 发明授权

US08154683B2 Illumination device and method for manufacturing the same 失效
标题翻译：照明装置及其制造方法
公开(公告)号：US08154683B2
公开(公告)日：2012-04-10
申请号：US13130530
申请日：2009-11-26
申请人： Kenji Yoneda , Kenji Miura
发明人： Kenji Yoneda , Kenji Miura
IPC分类号： G02F1/1335
CPC分类号： H05K1/189 , F21K9/00 , F21Y2115/10 , G01N21/8806 , G01N2201/0626 , H05K3/305 , H05K3/3442 , H05K3/3484 , H05K2201/09018 , H05K2201/10106 , H05K2201/10636 , H05K2203/0455 , Y02P70/611 , Y02P70/613
摘要： The present invention relates to a method for easily manufacturing an illumination device in which a surface mount chip-type LED is used, and a wiring board is formed into a truncated conical or another shape. The method includes, in a flexible strip-like wiring board having a partial ring or a linear shape, providing a through-hole T for filling with solder paste S at a wiring end portion L to be connected with a terminal of an LED, temporarily fixing the LED with bond B onto the wiring board held in a plate-like state, filling the through-hole T with the solder paste S from a back surface of the wiring board, rounding the wiring board mounted with the LED into a truncated conical or cylindrical shape, and reflowing the wiring board in the rounded state to solder the LED.
摘要翻译：本发明涉及容易制造其中使用表面贴装芯片型LED的照明装置的方法，并且布线板形成为截头圆锥形或其它形状。该方法包括在具有部分环或线性形状的柔性条状布线板中，提供用于在与LED的端子连接的布线端部L处填充焊膏S的通孔T临时用键B将LED固定在板状状态的布线板上，从布线板的背面向焊盘S填充通孔T，将安装有LED的布线板四舍五入为截头圆锥形或圆柱形，并且在圆形状态下回流布线板以焊接LED。

43. 发明授权

US08074397B2 Illuminator for plant growth 失效
标题翻译：用于植物生长的照明器
公开(公告)号：US08074397B2
公开(公告)日：2011-12-13
申请号：US10203620
申请日：2001-02-22
申请人： Kenji Yoneda , Minoru Takahata , Takahiro Hayashi
发明人： Kenji Yoneda , Minoru Takahata , Takahiro Hayashi
IPC分类号： A01G29/00
CPC分类号： A01G7/045 , Y02P60/149 , Y10S47/06
摘要： To provide an illuminator for plant growth that can illuminate a plant intermittently (pulse illumination) or continuously to cause an effect similar to sunbeam spot phenomenon, thereby accelerating photosynthetic reaction.Specifically, the illuminator for plant growth includes a light source composed of a semiconductor optical device, a control unit for outputting a turn-on timing signal for the light source, a rhythm signal detecting unit for A/D converting an input rhythm signal, a timing signal modulating unit for modulating the turn-on timing signal with the output signal from the rhythm signal detecting unit, and a pulse drive unit for pulse-modulating a power signal with the modulated turn-on timing signal outputted from the timing signal modulating unit and supplying the pulse-modulated power signal to the light source.
摘要翻译：为了提供可以间歇地照射植物（脉冲照明）或连续地引起植物生长的照明器，以产生类似于日光斑点现象的效果，从而加速光合作用。具体而言，植物生长用照明装置包括由半导体光学装置构成的光源，用于输出光源的导通定时信号的控制部，用于对输入的节奏信号进行A / D变换的节奏信号检测部，定时信号调制单元，用于利用来自节奏信号检测单元的输出信号调制开启定时信号;以及脉冲驱动单元，用于利用从定时信号调制单元输出的调制接通定时信号脉冲调制功率信号并将脉冲调制功率信号提供给光源。

44. 发明申请

US20110278606A1 LED LIGHT EMITTING DEVICE 有权
标题翻译： LED发光装置
公开(公告)号：US20110278606A1
公开(公告)日：2011-11-17
申请号：US13146889
申请日：2010-02-05
申请人： Hirokazu Suzuki , Jun Konishi , Yuichiro Tanaka , Kenji Yoneda
发明人： Hirokazu Suzuki , Jun Konishi , Yuichiro Tanaka , Kenji Yoneda
IPC分类号： H01L31/0216
CPC分类号： H01L25/0753 , H01L33/504 , H01L33/508 , H01L2224/49107 , H05B33/0821 , H05B33/0857 , H01L2224/48091 , H01L2924/00014
摘要： In order to provide an LED light emitting device that can easily control a color temperature of white light, the LED light emitting device is provided with a plurality of types of light emitting parts that: respectively have LED elements that emit ultraviolet radiation or violet color visible light, and phosphors that absorb the ultraviolet radiation or violet color visible light to emit colored light; and emit the colored light, wherein: the colored light emitted by the plurality of types of light emitting parts become white light when all mixed with each other; the LED elements of the plurality of types of light emitting parts are all the same ones, and mounted on a single base material; and two or more light emitting parts overlap with each other in their parts.
摘要翻译：为了提供能够容易地控制白光的色温的LED发光装置，LED发光装置具有多种类型的发光部，分别具有发出紫外线或紫色可见的LED元件光和荧光体，其吸收紫外线或紫色可见光以发出有色光; 并发出着色光，其中：当全部混合时，由多种类型的发光部分发出的着色光成为白光; 多种类型的发光部件的LED元件都是相同的，并且安装在单个基材上; 并且两个或更多个发光部件在它们的部分中彼此重叠。

45. 发明授权

US07896524B2 Light irradiation apparatus 失效
标题翻译：光照射装置
公开(公告)号：US07896524B2
公开(公告)日：2011-03-01
申请号：US11916263
申请日：2006-05-26
申请人： Kenji Yoneda , Mitsuru Saito
发明人： Kenji Yoneda , Mitsuru Saito
IPC分类号： F21V17/02
CPC分类号： F21V5/00 , F21V5/008 , F21V5/04 , F21V7/0091 , F21V7/04 , F21V13/04 , F21V14/00 , F21V14/02 , F21V14/06 , F21V21/30 , F21V27/02 , F21W2131/411 , F21Y2115/10 , G02B19/0028 , G02B19/0061 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2924/00014
摘要： The invention provides a light irradiation apparatus that can adjust widening/narrowing of a light irradiation area and can guide almost whole of light emitted from an LED to the light irradiation area.The apparatus has an LED 11 and an optical unit 2 for making light for the LED 11 pass through itself and emit from its apical surface 21, and is equipped further with a supporting body 1A for holding the LED on the apical surface and a position adjustment mechanism for adjusting a relative position of the optical unit 2 to the LED 11 along an optical axis C direction. The apparatus is configured so that the potion adjustment mechanism make the optical unit 2 move relative to the LED 11 between a proximity position P1 at which a part or the whole of the supporting body 1A is housed in a base end recess 25 and a clearance position P2 at which substantially whole of the supporting body 1A comes out of the base end recess 25 so that the apical surface of the supporting body 1A and a base end face 22 of the optical unit 2 become substantially the same height.
摘要翻译：本发明提供一种光照射装置，其可以调节光照射区域的加宽/变窄，并且可以将从LED发射的几乎全部的光引导到光照射区域。该装置具有LED 11和用于使LED 11的光通过其自身并从其顶面21发射的光学单元2，并且还配备有用于将LED保持在顶面上的支撑体1A和位置调整用于沿着光轴C方向调整光学单元2相对于LED11的相对位置的机构。该装置被配置为使得光学单元2相对于LED11在支撑体1A的一部分或整体容纳在基端凹部25中的接近位置P1和间隙位置之间移动 P2，其中基本上整个支撑体1A从基端凹部25出来，使得支撑体1A的顶面和光学单元2的基端面22变得基本相同的高度。

46. 发明申请

US20100033080A1 COAXIAL LIGHT IRRADIATION DEVICE 审中-公开
标题翻译：同轴光照射装置
公开(公告)号：US20100033080A1
公开(公告)日：2010-02-11
申请号：US12064707
申请日：2006-08-29
申请人： Kenji Yoneda
发明人： Kenji Yoneda
IPC分类号： H01J1/62
CPC分类号： G01N21/8806 , H01L51/5209 , H01L2251/5361
摘要： The light irradiation device is for inspecting a surface of an object W such as a product by irradiating the light on the object W, and has an arrangement wherein multiple microscopic EL elements 2, each of which comprises a transparent electrode layer 22 arranged at an object side, a non-transparent electrode layer 23 arranged at an opposite side to the object W and a luminous layer 21 that is arranged between the transparent electrode layer 22 and the non-transparent electrode layer 23 and that emits the light by imparting voltage, are laid out with a space S provided between each other, thereby further promoting more even illumination, downsizing and weight saving.
摘要翻译：光照射装置用于通过对物体W照射光来检查诸如产品的物体W的表面，并且具有其中多个微观EL元件2，其中每个包括布置在物体上的透明电极层22 配置在与物体W相反侧的非透明电极层23和布置在透明电极层22和非透明电极层23之间并通过施加电压而发光的发光层21分别为布置有彼此之间设置的空间S，从而进一步促进更均匀的照明，减小尺寸和减轻重量。

47. 发明申请

US20090002994A1 Light Irradiation Device 失效
标题翻译：光照射装置
公开(公告)号：US20090002994A1
公开(公告)日：2009-01-01
申请号：US11720420
申请日：2005-11-29
申请人： Kenji Yoneda , Kenji Miura
发明人： Kenji Yoneda , Kenji Miura
IPC分类号： F21V29/00
CPC分类号： F21V29/74 , F21V7/0091 , F21V29/767 , F21Y2115/10 , G01N21/8806 , G02B6/0006 , G02B6/4298
摘要： The light irradiation device of this invention intends to further facilitate an assembling procedure and to stabilize the quality as a product.The light irradiation device comprises an LED 5, an optical unit 4 that makes an engagement with the LED 5 with their axial lines aligned with each other, a tubular first housing element 2 having an opening D at its rear end surface for inserting the optical unit 4 and the LED 5 into the inside of the first housing element 2, a deciduous inhibition member R that makes an engagement with a vicinity of the opening D of the first housing element 2 and that prevents the optical unit 4 that has been inserted into the first housing element 2 from dropping off, a second housing element 3 that blocks up the opening D by being mounted on a predetermined position of the first housing element 2 and that forms a housing CS together with the first housing element 2, and a projecting member 10 that is arranged on the second housing element 3 to project forward, and at the predetermined position, the projecting member 10 presses the rear surface of the LED 5 to engage the optical unit 4 and the LED 5, thereby to align their axial lines.
摘要翻译：本发明的光照射装置旨在进一步促进组装过程并使作为产品的质量稳定。光照射装置包括LED 5，与LED 5的轴线彼此对准的光学单元4，在其后端表面具有用于插入光学单元的开口D的管状第一壳体元件2 4和LED 5进入第一壳体元件2的内部，与第一壳体元件2的开口D附近接合并且防止插入到第一壳体元件2中的光学单元4的落叶抑制构件R 第一壳体元件2脱落时，通过安装在第一壳体元件2的预定位置并与第一壳体元件2一起形成壳体CS而阻挡开口D的第二壳体元件3，以及突出构件 10布置在第二壳体元件3上以向前突出，并且在预定位置处，突出构件10按压LED 5的后表面以接合光学单元4和LED 5 从而使其轴线对准。

48. 发明申请

US20080026251A1 Insulating film formation method, semiconductor device, and substrate processing apparatus 有权
标题翻译：绝缘膜形成方法，半导体器件和衬底处理设备
公开(公告)号：US20080026251A1
公开(公告)日：2008-01-31
申请号：US11826495
申请日：2007-07-16
申请人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
发明人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
IPC分类号： H01L21/31 , B32B9/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45504 , C23C16/45546 , H01L21/02164 , H01L21/0217 , H01L21/02181 , H01L21/0228 , H01L21/31608 , H01L21/31645 , H01L21/3185
摘要： In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.
摘要翻译：在绝缘膜形成方法中，将其中以低流量供给O 3 N的循环A供应到基板上，然后将所提供的O 3与Hf反应，在非平衡状态下形成氧化铪膜的衬底进行M次（M> = 1），并且以高流速将O 3 3的循环B供给到将底物和然后使O 3在平衡状态下与Hf在基板上反应以形成氧化铪膜N次（N> = 1）。这些绝缘膜形成循环被定义为一个顺序。重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

49. 发明授权

US07291535B2 Method and apparatus for fabricating semiconductor device 有权
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US07291535B2
公开(公告)日：2007-11-06
申请号：US11000209
申请日：2004-12-01
申请人： Masahiko Niwayama , Kenji Yoneda , Kazuma Takahashi
发明人： Masahiko Niwayama , Kenji Yoneda , Kazuma Takahashi
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/26513 , H01L21/26586 , H01L29/045 , H01L29/6656 , H01L29/7833
摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧蚀刻去除形成的第一绝缘膜，从第一绝缘膜形成覆盖栅电极的侧表面的第一侧壁; 并且通过使用能够一体地处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区。在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。

50. 发明授权

US07164178B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07164178B2
公开(公告)日：2007-01-16
申请号：US10872403
申请日：2004-06-22
申请人： Kenji Yoneda
发明人： Kenji Yoneda
IPC分类号： H01L29/76
CPC分类号： H01L21/28185 , H01L21/26506 , H01L21/28202 , H01L21/823462 , H01L21/823857 , H01L29/518 , Y10S438/981
摘要： A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.
摘要翻译：半导体器件包括形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。氮被引入栅绝缘膜中，其氮浓度分布在栅极绝缘膜的表面附近或栅极绝缘膜的厚度方向的中心附近具有峰。栅极绝缘膜中的氮浓度的峰值等于或大于10atm％且小于或等于40atm％。

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