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41. 发明授权

US5486059A Keyboard having improved keytop 失效
公开(公告)号：US5486059A
公开(公告)日：1996-01-23
申请号：US021227
申请日：1993-02-23
申请人： Seiichi Iwasa , Hideyuki Motoyama , Makoto Yoshioka
发明人： Seiichi Iwasa , Hideyuki Motoyama , Makoto Yoshioka
IPC分类号： G06F3/02 , B41J5/08 , G06F3/023 , H01H13/14 , H01H13/84
CPC分类号： G06F3/0219 , H01H13/14 , H01H13/84 , H01H2217/004 , H01H2217/042 , H01H2221/066
摘要： A keyboard includes a keyboard body, a plurality of keys arranged in rows and columns, and switching elements for turning switching elements ON and OFF in response to operations on the plurality of keys. A special key among the plurality of keys has a keytop which is at least a stroke length of the special key higher than keytops of keys arranged in a row in which the special key is located.

42. 发明授权

US4568618A Magnetic bubble memory chip 失效
标题翻译：磁性气泡存储芯片
公开(公告)号：US4568618A
公开(公告)日：1986-02-04
申请号：US659879
申请日：1984-10-15
申请人： Hidema Uchishiba , Seiichi Iwasa , Kazuyuki Yamaguchi
发明人： Hidema Uchishiba , Seiichi Iwasa , Kazuyuki Yamaguchi
IPC分类号： G11C11/14 , G11C19/08 , H01F10/24 , G11B5/64
CPC分类号： H01F10/24 , G11C19/085 , Y10S428/90 , Y10S428/91
摘要： In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.
摘要翻译：为了使磁性石榴石晶体膜（54）的剥离场的温度依赖性与用于在气泡存储芯片（2）中施加偏置磁场的永磁体（56）的剩余磁化的温度依赖性相匹配）之后，在其上形成导电体之后，必须使磁性石榴石晶体膜（51）的塌陷场的温度系数为0.01〜0.04％/℃，绝对值大于温度上述剩余磁化强度的系数（56）。本发明通过增加构成磁性石榴石晶体的单位晶格的八面体位置中的Lu离子对Fe离子的取代度来实现。因此，确保了与现有的工作温度范围相当的两倍宽的工作温度范围。

43. 发明授权

US07652328B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07652328B2
公开(公告)日：2010-01-26
申请号：US11705792
申请日：2007-02-14
申请人： Hiroyuki Yamasaki , Kouji Matsuo , Seiichi Iwasa
发明人： Hiroyuki Yamasaki , Kouji Matsuo , Seiichi Iwasa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7843 , H01L21/2254 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, wherein the semiconductor element region has a wall portion between the isolation region and the epitaxial semiconductor portion.
摘要翻译：半导体器件包括隔离区，由隔离区限定的半导体元件区，并具有沟道形成部和凹部，凹部形成在隔离区与沟道形成部之间，形成外延半导体部在所述凹部中，所述半导体元件区域在所述隔离区域和所述外延半导体部分之间具有壁部。

44. 发明授权

US5977938A Apparatus and method for inputting and outputting by using aerial image 失效
标题翻译：使用航空图像输入和输出的装置和方法
公开(公告)号：US5977938A
公开(公告)日：1999-11-02
申请号：US735752
申请日：1996-10-23
申请人： Seiichi Iwasa
发明人： Seiichi Iwasa
IPC分类号： G02B27/22 , G06F3/033 , G06F3/042 , G09F9/00 , G09G3/00
CPC分类号： G06F3/0423 , G02B27/2292 , G06F3/0421
摘要： A visible light corresponding to an input key is generated from a visible light generating unit as a display source, thereby allowing an aerial image as a mirage of an input operating unit to appear by an aerial image forming unit using a pair of parabola mirrors or the like. When touching the aerial image by a finger, its reflected light is detected by a photodetecting unit. A controller discriminates an operating position from a driving timing of the visible light generating unit and outputs a switch signal to the outside.
摘要翻译：从作为显示源的可见光发生单元产生对应于输入键的可见光，从而允许作为输入操作单元的幻影的航空图像由航空图像形成单元使用一对抛物面反射镜或喜欢。当用手指触摸空中图像时，其反射光由光电检测单元检测。控制器根据可见光发生单元的驱动定时识别操作位置并向外部输出开关信号。

45. 发明授权

US5327411A Write control method and apparatus for writing optical disk data 失效
标题翻译：用于写入光盘数据的写控制方法和装置
公开(公告)号：US5327411A
公开(公告)日：1994-07-05
申请号：US953188
申请日：1992-09-29
申请人： Seiichi Iwasa , Nagaaki Koshino , Kenichi Utsumi , Masahiro Nakada
发明人： Seiichi Iwasa , Nagaaki Koshino , Kenichi Utsumi , Masahiro Nakada
IPC分类号： G11B7/00 , G11B7/0045 , G11B7/006 , G11B7/013 , G11B7/125 , H04N5/85 , G11B7/007 , G11B21/10
CPC分类号： G11B7/00451 , G11B7/00456 , G11B7/0062 , G11B7/24085 , G11B7/00454
摘要： A write control method for writing optical disk data wherein pits are written by a write signal composed of mark signal parts and space signal parts, and a length of each pit represents the optical disk data, comprising the steps of: converting the mark signal parts to pulses and generating a series of pulse trains which correspond to lengths of the mark signal parts, respectively; controlling a lengths and/or amplitude of each of the pulse trains in accordance with a length of the space signal part immediately before the mark signal part; and applying successively the controlled pulse trains to a laser irradiation device so that the pits are written.
摘要翻译：一种用于写入光盘数据的写控制方法，其中凹坑由由标记信号部分和空间信号部分组成的写信号写入，并且每个凹坑的长度表示光盘数据，包括以下步骤：将标记信号部分转换为并产生一系列对应于标记信号部分的长度的脉冲串; 根据在标记信号部分之前的空间信号部分的长度来控制每个脉冲串的长度和/或幅度; 并且将受控脉冲序列连续地施加到激光照射装置，以便写入凹坑。

46. 发明授权

US4259727A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4259727A
公开(公告)日：1981-03-31
申请号：US52317
申请日：1979-06-26
申请人： Shobu Orihara , Seiichi Iwasa , Ryoichi Kinoshita
发明人： Shobu Orihara , Seiichi Iwasa , Ryoichi Kinoshita
IPC分类号： G11C19/08
CPC分类号： G11C19/0883
摘要： A magnetic bubble memory device which comprises special minor loops for storing address information regarding spare minor loops corresponding to defective regular minor loops. The structure of the bubble transfer or reproducing gates corresponding to said special minor loops is different from that corresponding to ordinary minor loops.
摘要翻译：一种磁性气泡存储装置，包括用于存储关于与缺陷的正常小环对应的备用次级环路的地址信息的特殊次级环路。对应于所述特殊次级环的气泡转移或再现门的结构与对应于普通次级回路的结构不同。

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