专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US6051170A Method of collecting molding data and obtaining molding condition for injection molding machine 失效
标题翻译：收集成型数据并获得注塑机成型条件的方法
公开(公告)号：US6051170A
公开(公告)日：2000-04-18
申请号：US930978
申请日：1997-10-15
申请人： Masao Kamiguchi , Kenji Araki , Osamu Saito
发明人： Masao Kamiguchi , Kenji Araki , Osamu Saito
IPC分类号： B22D17/32 , B29C45/76 , G05B19/4093 , G06F17/40
CPC分类号： G05B19/40937 , B29C45/766 , B29C2945/76006 , B29C2945/76083 , B29C2945/7611 , B29C2945/76187 , B29C2945/76204 , B29C2945/76381 , B29C2945/76404 , B29C2945/76939 , G05B2219/35352 , G05B2219/45244 , Y02P90/265
摘要： A method of collecting molding data and obtaining a molding condition releases an operator from test shot operations and improves operation efficiency. A rough molding condition obtained by a condition setting operation is modified with a pitch which is set for respective molding condition items and a plurality of analogous molding conditions are created and stored in a host computer. A set of the analogous molding conditions and the set number of test shots are transferred to a controller of an injection molding machine to continuously carry out the test shots. Molding data detected in the test shots are transferred to and stored in the host computer. An optimal molding condition is obtained by evaluating the molding data under the respective molding conditions.
摘要翻译： PCT No.PCT / JP97 / 00415 Sec。 371日期：1997年10月15日 102（e）日期1997年10月15日PCT 1997年2月17日提交PCT公布。出版物WO97 / 29898 日期1997年8月21日收集成型数据并获得成型条件的方法使操作者免于测试操作，并提高操作效率。通过条件设定操作获得的粗糙成型条件用针对各个成型条件项目设定的间距进行修改，并且多个相似的成型条件被创建并存储在主计算机中。将一组相似的模制条件和设定的测试次数转移到注塑机的控制器以连续执行测试。在测试镜头中检测到的成型数据被传送到并存储在主计算机中。通过在相应的成型条件下评价成型数据来获得最佳成型条件。

42. 发明授权

US5453667A Inverter having frequency changing function 失效
标题翻译：变频器具有变频功能
公开(公告)号：US5453667A
公开(公告)日：1995-09-26
申请号：US83510
申请日：1993-06-30
申请人： Mitsuhiro Matsuda , Keiichi Shimizu , Kenji Araki , Ichiro Yokozeki , Fumio Hirano
发明人： Mitsuhiro Matsuda , Keiichi Shimizu , Kenji Araki , Ichiro Yokozeki , Fumio Hirano
IPC分类号： H05B41/28 , H05B41/16
CPC分类号： H05B41/2813 , H05B41/2806 , Y02B20/22 , Y10S315/02
摘要： This invention suppresses the occurrence of interference in a very short period to prevent device destruction. An inverter circuit of this invention includes a crystal oscillator, which oscillates at a fixed frequency, a load-status detector, which receives a voltage and current to be applied to a load including an inductive or capacitive component and detects the status of the load, a voltage-controlled oscillator, which oscillates at a frequency corresponding to the load status detected by the load-status detector, and a switch, which selects the output of the crystal oscillator or the output of the voltage-controlled oscillator and supplies the selected output to the load. An electrodeless discharge lamp lighting device according to this invention uses an inverter circuit having the above structure.
摘要翻译：本发明能够在非常短的时间内抑制干扰的发生，防止设备的破坏。本发明的逆变器电路包括以固定频率振荡的晶体振荡器，负载状态检测器，其接收要施加到包括电感或电容分量的负载的电压和电流，并检测负载的状态，电压控制振荡器，其以对应于由负载状态检测器检测到的负载状态的频率振荡;以及开关，其选择晶体振荡器的输出或压控振荡器的输出并提供所选择的输出到负载。根据本发明的无电极放电灯点亮装置使用具有上述结构的逆变器电路。

43. 发明授权

US5312600A Silicon single crystal manufacturing apparatus 失效
标题翻译：硅单晶制造装置
公开(公告)号：US5312600A
公开(公告)日：1994-05-17
申请号：US50732
申请日：1993-04-20
申请人： Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Takeshi Kaneto , Yasumitsu Nakahama , Takeshi Suzuki , Akio Fujibayashi
发明人： Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Takeshi Kaneto , Yasumitsu Nakahama , Takeshi Suzuki , Akio Fujibayashi
IPC分类号： C30B15/14 , C30B15/30
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1052 , Y10T117/1068
摘要： An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.
摘要翻译：用于制造直径大的硅单晶的装置取决于切克劳斯基法，其中在保持（10）的温度上提供适当的开口（11），以防止由气氛气体引起的不期望的影响。设备的主要元件是开口（11）的面积之和大于在保温盖（10）的下端和硅溶液层之间形成的间隙（18）的面积，而且保温盖和绝热构件（12）由金属板构成。

44. 发明授权

US5284631A Crucible for manufacturing single crystals 失效
标题翻译：坩埚用于制造单晶
公开(公告)号：US5284631A
公开(公告)日：1994-02-08
申请号：US2126
申请日：1993-01-07
申请人： Takeshi Kaneto , Akio Fujibayashi , Yoshinobu Shima , Kenji Araki
发明人： Takeshi Kaneto , Akio Fujibayashi , Yoshinobu Shima , Kenji Araki
IPC分类号： C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： A crucible including a cylindrical partition member arranged concentrically therein for use in a silicon single crystal growing apparatus. The bottom of the crucible located on the inner side of the partition member has a thickness which is not less than 1.3 times and not greater than 4 times the thickness of the partition member and it also has a porosity which is between 0 and 0.2% in its inner layer and between 0.2 and 15% in its outer layer as compared with the porosity of the partition member which is 0.2% or less. By virtue of the foregoing, a D.F. ratio (ratio of dislocation free) of 80% or over can be expected.
摘要翻译：一种坩埚，其包括用于硅单晶生长装置的同心配置的圆筒形分隔构件。位于分隔构件内侧的坩埚的底部的厚度为分隔构件的厚度的1.3倍以上且4倍以下，其孔隙率为0〜0.2％其内层与外隔层的0.2〜15％相比，分隔构件的孔隙率为0.2％以下。根据上述，D.F. 80％以上的比例（无位错率）可以预期。

45. 发明授权

US5256430A Method for generating a detonation pressure 失效
标题翻译：产生爆震压力的方法
公开(公告)号：US5256430A
公开(公告)日：1993-10-26
申请号：US886717
申请日：1992-05-21
申请人： Minoru Suzuki , Katsumi Ikusawa , Kenji Araki , Naotake Yoshihara , Yoshio Murayama
发明人： Minoru Suzuki , Katsumi Ikusawa , Kenji Araki , Naotake Yoshihara , Yoshio Murayama
IPC分类号： B21D26/08 , B23K20/08 , A23L3/00
CPC分类号： B23K20/08 , Y10T29/49806
摘要： A method for generating an underliquid shock pressure comprises the steps of igniting a combustible mixture gas to form detonation waves, imploding the detonation waves in their advancing direction, propagating a pressure obtained by imploding the detonation waves to a liquid, and converting the pressure to an underliquid pressure which is applied to a workpiece. The pressure obtained by imploding the detonation waves may be applied directly to an elastic rubber body, thus converting the pressure to an underelastomer shock pressure, which is then applied to the workpiece via the elastic body. An apparatus for generating an underliquid shock pressure comprises a combustion chamber whose cross-sectional area decreases from one end toward the other end of the chamber, an ignition chamber to which fuel is fed and in which a spark plug is positioned, a plurality of guidance paths extending from the ignition chamber and communicating with one end of the combustion chamber, each of the guidance paths having substantially the same length, and a pressure medium chamber connected to an opening of the other end of the combustion chamber having the smallest cross-sectional area. The pressure at the smallest cross-sectional area end of the combustion chamber is applied to a liquid to convert the pressure into underliquid shock pressure, which is then applied to a workpiece either directly or via an elastic body interposed between the liquid and the workpiece.

46. 发明授权

US5187413A Low pressure discharge lamp apparatus 失效
标题翻译：低压放电灯装置
公开(公告)号：US5187413A
公开(公告)日：1993-02-16
申请号：US753066
申请日：1991-08-30
申请人： Kenji Araki , Hiroki Sasaki , Akihiro Yonezawa , Youichirou Mitsuyuki
发明人： Kenji Araki , Hiroki Sasaki , Akihiro Yonezawa , Youichirou Mitsuyuki
IPC分类号： A61L2/10 , G03F7/20 , H01J61/00 , H01J61/72 , H05B41/282 , H05B41/295
CPC分类号： G03F7/70016 , H01J61/72 , H05B41/2828 , H05B41/295
摘要： A low pressure discharge lamp apparatus has a low pressure discharge lamp with an arc tube. The arc tube has a first end and a second end, each with electrodes which define a discharge space therebetween. A mercury/rare gas is sealed in the arc tube. The low pressure discharge lamp apparatus further has a lighting circuit apparatus for lighting the lamp by supplying a current with a polarity reversed for each half cycle to electrodes in the first and second ends of the arc tube. The lighting circuit apparatus supplies, to the lamp, a current whose waveform has a flat peak for each half cycle and a maximum current value of the current is restricted to less than a level in which the excitation of mercury atoms is saturated.

47. 发明授权

US5089238A Method of forming a temperature pattern of heater and silicon single crystal growth control apparatus using the temperature pattern 失效
标题翻译：使用温度图案形成加热器和硅单晶生长控制装置的温度模式的方法
公开(公告)号：US5089238A
公开(公告)日：1992-02-18
申请号：US601096
申请日：1990-10-22
申请人： Kenji Araki , Akiho Maeda , Masahiko Baba
发明人： Kenji Araki , Akiho Maeda , Masahiko Baba
IPC分类号： C30B15/00 , C30B15/14 , C30B15/26 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/14 , C30B15/26 , Y10T117/1008
摘要： Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T.sub.B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation .DELTA.D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T.sub.B (X) on a screen of the display unit by using a mouse (78).

48. 发明授权

US4848272A Apparatus for forming thin films 失效
标题翻译：用于形成薄膜的装置
公开(公告)号：US4848272A
公开(公告)日：1989-07-18
申请号：US162064
申请日：1988-02-29
申请人： Masanori Ohmura , Hiroshi Sakama , Kenji Araki , Hiroshi Kamio , Yoshinobu Shima
发明人： Masanori Ohmura , Hiroshi Sakama , Kenji Araki , Hiroshi Kamio , Yoshinobu Shima
IPC分类号： H01L21/205 , C23C16/458 , C30B25/10 , C30B25/12
CPC分类号： C30B25/12 , C23C16/4588 , C30B25/10
摘要： An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.
摘要翻译：一种用于形成外延层的装置，包括：第一基座，设置在反应炉中，具有由热反射材料构成的外周，并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座，所述第一基座处于预定的空间，并且具有由热反射材料构成的内周，并且能够支撑多个半导体晶片，使得这些半导体晶片面对由第一基座支撑的半导体晶片，以及一对热反射构件设置在第一基座的外周和第二基座的内周之间的反应炉中。在外延生长过程期间，第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。

49. 发明授权

US4050959A Process of making a high strength cold reduced steel sheet having high bake-hardenability and excellent non-aging property 失效
标题翻译：制造具有高烘烤硬化性和优异的不老化性能的高强度冷轧钢板的方法
公开(公告)号：US4050959A
公开(公告)日：1977-09-27
申请号：US631929
申请日：1975-11-14
申请人： Kazuhide Nakaoka , Kenji Araki , Koji Iwase , Yasuo Koike , Shiro Fukunaka
发明人： Kazuhide Nakaoka , Kenji Araki , Koji Iwase , Yasuo Koike , Shiro Fukunaka
IPC分类号： C21D1/18 , C21D8/04 , C21D9/46 , C21D9/52 , C22C38/00
CPC分类号： C21D8/0473 , C22C38/00 , C21D1/18 , C21D9/52
摘要： When a cold reduced steel of which chemical composition is substantially controlled within the range of 10x[S]% to 2.00% [Mn], 0.003 to 0.02% [N] and (
摘要翻译：当化学成分基本上控制在10×[S]〜2.00％[Mn]范围内的冷还原钢时，0.003〜0.02％[N]和（<5×1031 4）/ [N]％[Al] 进行包括Ac1至900℃×5至180秒的升温步骤的完全连续退火工艺，通过喷水，室内再加热步骤将加热温度升至约室温的快速冷却步骤温度至150℃至450℃×5至300秒，然后容易地对上述钢进行最终的冷却和卷取步骤，高的烘烤淬透性和优异的非时效性。

50. 发明授权

US08159346B2 RFID system, RFID cable system, and RFID cable laying method 有权
标题翻译： RFID系统，RFID电缆系统和RFID电缆铺设方法
公开(公告)号：US08159346B2
公开(公告)日：2012-04-17
申请号：US11553642
申请日：2006-10-27
申请人： Toshimi Yokota , Kenji Araki , Kenji Utaka , Noritaka Matsumoto , Masatoshi Takada , Ryosuke Shigemi , Chikara Ota
发明人： Toshimi Yokota , Kenji Araki , Kenji Utaka , Noritaka Matsumoto , Masatoshi Takada , Ryosuke Shigemi , Chikara Ota
IPC分类号： G08B13/14
CPC分类号： G06Q50/04 , Y02P90/30
摘要： When an RFID is attached to an object to assist testing operations, the following problems are encountered; (1) the RFID of write type tends to cause a failure and is troublesome due to the necessity of rewrite each time the situation is changed, (2) the incorporation of the reader function in a terminal block increases the cost, and (3) the known techniques are targeted for only the connecting operation and are not adapted for a sequence test that takes the most expense in time and effort. The operations are aided by using an RFID reader and a terminal having the function for accessing a database of circuit information, RFID information, and test procedure information.
摘要翻译：当RFID附着到对象以辅助测试操作时，遇到以下问题; （1）写入类型的RFID趋向于导致故障，并且由于每次改变情况需要重写时都是麻烦的，（2）将读取器功能并入端子块中会增加成本，（3）已知技术仅针对连接操作，并且不适用于在时间和精力上花费最多费用的序列测试。通过使用具有访问电路信息数据库，RFID信息和测试程序信息的功能的RFID读取器和终端来辅助操作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式